This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.

This text discusses the physical principles of how and why crystals grow. It introduces the fundamental properties of crystal surfaces at equilibrium, and describes simple models and basic concepts of crystal growth including diffusion, thermal smoothing of a surface, and applications to semiconductors. It also covers more complex topics such as kinetic roughness, growth instabilities, and elastic effects, as well as the crucial contributions of crystal growth in electronics during this century. The book focuses on growth using molecular beam epitaxy. Throughout, the emphasis is on the role played by modern statistical physics. Informative appendices, interesting exercises and an extensive bibliography reinforce the text.