Newsletter GDR Pulse

Newsletter 4 | March 2016

Recently Published Upcoming Events Job Opportunities / Research

Sponsors Messages

Hiden Analytical
Hiden Analytical has been specialized in the design and manufacture of mass spectrometry systems for more than 30 years. It remains an independent company and works in direct partnership with its users to ensure the constant evolution of its technology, products and systems.
Its applications areas can be found in research, development as well as in production, and the company's international reputation is directly linked to applications in areas such as surface and thin film analysis, vacuum, gas and plasma analysis, the study of catalytic reactions, as well as several others.
Hiden Analytical has been working with its customers in France for the past 25 years, and its local team continues to provide its clients with complete project support. The company also attaches great importance to its after sales service, and still provides support for customers using products and systems which were supplied more than 25 years ago... something which is rather rare today! [More]

Recently Published

Dislocation-filtering and polarity in the selective area growth of GaN nanowires by continuous-flow MOVPE
P.-M. Coulon et al.
The early growth stages of GaN nanowires on GaN-on-sapphire templates with a patterned dielectric mask have been characterized by using transmission electron microscopy. The dielectric mask aperture (200–800 nm) determines the presence or absence of threading dislocations arising from the underlying template, which results in dislocation-free nanowires for small apertures and dislocation bending for larger apertures, owing to three-dimensional (3D) growth. The Ga polarity of the underlying template is conserved in all nanowires irrespective of the aperture size, even in regions grown laterally above the mask. The pure Ga polarity assures spatially homogeneous optical properties as evidenced by cathodoluminescence. [Full abstract] [Online article]

Kinetics and Energetics of Ge Condensation in SiGe Oxidation
T. David et al.
In this study, we address the mechanism of formation of Ge-rich layers (GRLs) and we determine the major driving forces of the enrichment process. We highlight the particular role played by the Si0.5Ge0.5 which is stabilized for various experimental conditions and strain levels. The process developed provides an easy and efficient way to produce planar GRLs free of dislocations with abrupt GRL/Si interfaces and tunable thickness. These GRLs could be fashioned for the heterogeneous integration of various systems on SOI. [Online article]

Spontaneous shape transition of thin films into ZnO nanowires with high structural and optical quality
S. Guillemin et al.
ZnO nanowires are usually formed by physical and chemical deposition techniques following the bottom-up approach consisting in supplying the reactants on a nucleation surface heated at a given temperature. We demonstrate an original alternative approach for the formation of ZnO nanowire arrays with high structural and optical quality, which is based on the spontaneous transformation of a ZnO thin film deposited by sol–gel process following a simple annealing. [Online article]

X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates
J. B. Rodriguez et al.
We report on the molecular beam epitaxy and characterization by X-ray diffraction techniques of GaSb layers grown on silicon substrates. AlSb and Al nucleation layers were used with different thicknesses and growth temperatures. Reciprocal space maps and a modified version of the Williamson-Hall analysis allowed for a characterization of the misfit dislocations properties. Finally, a post-growth annealing step is studied in order to further improve the material quality. Using this technique, a full-width-at-half-maximum of the GaSb peak of 235 arc sec was obtained for a layer thickness of 1 mm, which is comparable to the best results for GaAs or Ge on Si. [Online article]

Upcoming Events

Nanotech France 2016: Symposium 1
Hybrid nanomaterials for functional applications
June 1^st - 3^rd, 2016
Paris, France
Advisory committee: S. H. Anastasiadis, C. Ocal, L. Ottaviano, J. Garcia Solé, S. Mackowski, H. Bolink and T. Baron
Chairs: A. de Andrés and M. Vila
Main topics of the symposium:

Hybrid sensors and imaging technologies
Nano Electronics and Photonics
Nanohybrids for Energy generation, conversion and storage
Biomedicine and soft matter
Nanostructured materials and devices
Hybrid materials fabrication and characterization tools

More information about the symposium.
Conference website: http://www.setcor.org/conferences/Nanotech-France-2016/conference-workshops/14

NANOSEA 2016
NANOstructures and nanomaterials Self Assembly
July 3^rd - 8^th, 2016
Giardini Naxos (ME), Italy
Chairpersons: I. Berbezier, S. Boninelli and M. De Crescenzi
Hot topics to be covered by the conference:

Nanostructured Materials
Advanced Nano-characterization
Synthesis and Self-Assembly
Thin Films
Modelling
2D Materials
Applications

More information about the conference: http://www.nanosea2016.imm.cnr.it/

National Conference GDR PULSE 2016
July 18^th - 22^th, 2016
Amphithéâtre Berryer, Aix-Marseille Université, 110-114 La Canebière, France
Organizers: J-N. Aqua, P. Atkinson, I. Berbezier, Y. Cordier, C. Fontaine, E. Gil, N. Gogneau, P. Müller, O. Pierre-Louis, A. Ronda, G. Saint-Girons, F. Semond and X. Wallart
The French GDR PULSE organises a national conference on the ultimate processes of epitaxy of semiconductors The conference will cover all the scientific areas related to semiconductor epitaxy such as:

Nucleation, growth
Silicon heteroepitaxy and monolithic heterogeneous integration
Combination theory / experiments
Heteroepitaxy: composition, strain and morphology
Substrate Nanostructuring
Self-organisation on functionnal substrates
Selective growth and lateral epitaxy
Ultimate characterization and properties
Instrumental innovations and equipments
Applications (optics, electronics, magnetism, etc.) and industrial challenges
Thin films, Nanowires, Nanomembranes, Quantum Dots, Nanotubes, 2D Crystals

The aim of the conference is to give a comprehensive overview of the studies involving epitaxy of semiconductors. Apart from some invited presentations, the conferenc will give an audience to young researchers More information about the conference: http://www2.im2np.fr/GDR_CNRS_Pulse/Marseille2016/index.html

MBE 2016
19^th International Conference on Molecular Beam Epitaxy
September 4^th - 9^th, 2016
Montpellier, France
Conference chair: E. Tournié
Program chair: J.-C. Harmand
The International Conference on Molecular Beam Epitaxy (MBE 2016) provides a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research, including advances in the technique, synthesis of new materials, discovery of new physical properties, formation of novel heterostructures, and the development of innovative devices. The program topics are:

MBE fundamentals
III-V compounds
II-VI compounds
Group-IV semiconductors
Dilute Nitrides and Bismides
Wide Bandgap semiconductors
Oxide and Hybrid Epitaxial Systems
Spintronics and Topological Materials
Nanostructures (QDs, nanowires,...)
MBE grown Devices
2D materials (graphene, MoS₂, WS₂,...)

More information about the conference: http://mbe2016.sciencesconf.org/

Job Opportunities / Research

Micro-Nanotechnology Researcher/Engineer Position Candidate
Name: Hajer Makhloufi
Titles: Doctor - Engineer
Thesis title: "Nanofabrication of III-V heterostructures for optoelectronics devices"
Profile: "I am a micro-nanotechnology researcher/engineer with a strong knowledge on semiconductor processing technologies and materials characterization techniques. I am a good communicator who respects deadlines within high technical and experimental quality demanding environments. My participation to international conferences and research results published on international journals allowed me to enhance my professional and personal expertise.
I would be honored to be part of an innovative team who is willing to solve challenging problems and improve development, so you could take benefit from my own experience and I can enlarge my scientific and technical skills."
More informations: Curriculum Vitae
Contact: makhloufi.hajer@gmail.com

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