![]() | Jean-Pierre Ayoub |
| IM2NP Faculté des Sciences et Techniques Campus de Saint Jérôme - Case 261 Avenue Escadrille Normandie Niemen 13397 Marseille Cedex 20 | |
| téléphone : +33 (0) 4 91 28 90 11 | |
| mail : jean-pierre.ayoub@univ-cezanne.fr |
ATER (Université d'Aix-Marseille III)
Domaine d'activité :
Semi-conducteurs SiGe, SiC : redistribution de dopants, couches minces épitaxiées, contraintes, défauts étendus ; Microscopie Électronique en Transmission.
Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of Mn5Ge3 nanoscopic clusters on the electronic and magnetic properties. P. De Padova, J.-P. Ayoub, I. Berbezier, P. Perfetti, C. Quaresima, A. M. Tesla, D. Fiorani, B. Olivieri, J.-M. Mariot, A. Taleb-Ibrahimi, M. C. Richter, O. Heckmann and K. Hricovini, Physical Review B, 77, p045203 (2008).
Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films. J.-P. Ayoub, L. Favre, I. Berbezier, A. Ronda, L. Morresi, N. Pinto, Applied Physics Letters, 91, n°14, p141920 (2007).
MnxGe1−x thin layers studied by TEM, X-ray absorption spectroscopy and SQUID magnetometry. P. De Padova, J.-P. Ayoub, I. Berbezier, J.-M. Mariot, A. Taleb-Ibrahimi, M.C. Richter, O. Heckmann, A.M. Testa, D. Fiorani, B. Olivieri, S. Picozzi and K. Hricovini, Surface Science, 601, n°13, p2628 (2007).
Structural, magnetic and electronic transport properties of MnxGe1−x/Ge(0 0 1) films grown by MBE at 350 °C. L. Morresi, J.P. Ayoub, N. Pinto, M. Ficcadenti, R. Murri, A. Ronda, I. Berbezier, F. D’Orazio and F. Lucari, Surface Science, 601, n°13, p2632 (2007).
Structural and magnetic properties of GeMn diluted magnetic semiconductor. J.-P. Ayoub, L. Favre, A. Ronda, I. Berbezier, P. De Padova and B. Olivieri, Materials Science in Semiconductor Processing, 9, n°4-5, p832 (2006).
Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1−x alloys. L. Morresi, J.P. Ayoub, N. Pinto, M. Ficcadenti, R. Murri, A. Ronda and I. Berbezier, Materials Science in Semiconductor Processing, 9, n°4-5, p836 (2006).
Effect of ion irradiation on the structural and the magnetic properties of Zn0.75Co0.25O magnetic semiconductors. A. Dinia, J.P. Ayoub, G. Schmerber, E. Beaurepaire, D. Muller and J.J. Grob, Physics Letters A, 333, n°1-2, p152 (2004).
Ferromagnetic exchange interaction between hard and soft ferromagnetic layers through ZnS semiconductor. A. Dinia, S. Colis, G. Schmerber and J. P. Ayoub, Journal of Magnetism and Magnetic Materials, 272-276, E1511 (2004)
