 | Marica Canino |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 27 56 |
| | Marica Canino |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 27 56 |
Postdoc, Université d'Aix-Marseille
Equipe «Défauts étendus et nano-objets : structure et thermodynamique»
Domaine d'activité :
Mesures électriques sur jonctions ultra courtes
Publications récentes dans des revues avec comité de lecture
Preparation of Ni2Si contacts: effect on SiC diode operation
M. Canino, A. Cavallini, A. Poggi, R. Nipoti
Poster presentation at the DRIP XII, 9-13 September 2007, Berlin (Germany)
Phosphorus ion implantation in SiC: influence of the annealing conditions on dopant activation and defects
Phd thesis, Deprtment of Physics, University od Bologna, directrice de these prof. Anna Cavallini, tuttrice dott. Antonella Poggi
March 2007
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process
M. Canino, F. Giannazzo, F. Roccaforte, A. Poggi, S. Solmi, V. Raineri, R. Nipoti
Materials Science Forum, Vols. 556-557 (2006) pp.571-574
Poster presentation at the VI ESCSRM, 2-6 September 2006, Newcastle Upon Tyne (UK)
Ion implanted p+/n 4H-SiC junctions:
effect of the heating velocity on the post implantation annealing
R. Nipoti, A. Carnera, M. Canino, A. Poggi, F. Bergamini, S. Solmi, M. Passini
Mater. Res. Soc. Symp. Proc. Vol. 911 (2006)
Effects of heating ramp rates on the characteristics of Al implanted 4H-SiC junctions
A. Poggi, F. Bergamini, R. Nipoti, S. Solmi, M. Canino, A. Carnera
Applied Physics Letters 88 (2006) 162106
Correlation between current transport and defects in n+/p 6H-SiC diodes
M. Canino, A. Castaldini, A. Cavallini, F. Moscatelli, R. Nipoti, A. Poggi
Materials Science Forum, Vols. 527-529 (2006) pp.811-814
Poster presentation at the X ICSCRM, 27-23 Sept. 2005, Pittsburgh, Pennsylvania
Current analysis of ion implanted and not terminated p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient
R. Nipoti, F. Bergamini, F. Moscatelli, A. Poggi, M. Canino, G. Bertuccio
Materials Science Forum, Vols. 527-529 (2006) pp.815-818
Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature
F. Bergamini, F. Moscatelli, M. Canino, A. Poggi, R. Nipoti
Materials Science Forum, Vols. 483-485 (2005) pp.625-628
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterization as a function of temperature
M. Canino, A. Castaldini, A. Cavallini, F. Moscatelli, R. Nipoti, A. Poggi
Materials Science Forum, Vols. 483-485 (2005) pp.649-652
Poster presentation at the V ECSCRM, 2-6 Sept. 2004, Bologna, Itlay
Ni-Silicide contacts to 6H-SiC: contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer
F. Moscatelli, A. Scorzoni, A. Poggi, M. Canino, R. Nipoti
Materials Science Forum, Vols. 483-485 (2005) pp.737-740
SiC donor doping by 300°C Phosphorus implantation: characterization of the doped layer properties in dependence of the post-implantation annealing temperature
A. Poggi, R. Nipoti, F. Moscatelli, G. C. Cardinali, M. Canino
Materials Science Forum, Vols. 457-460 (2004) pp.945-948
