Carine Dumas
	IM2NP - Polytech Dpt Microélectronique et Télécommunications 38, rue Frédéric Joliot-Curie IMT Technopôle de Château Gombert 13451 Marseille Cedex 20 France
	téléphone : +33 (0) 4 91 05 47 83
	mail : carine.dumas@im2np.fr

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• Equipe "Mémoires"
  

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Domaine d'activité : caractérisation électrique et analyse de la fiabilité de dispositifs à commutation de résistance.

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Publications :

- Evolution of quantumelectronic features with the size of silicon nanoparticles embedded in a SiO₂layer obtained by low energy ion implantation, J.Grisolia, M.Shalchian,G.BenAssayag, H.Coffin, C.Bonafos, C.Dumas, S.M.Atarodi, and A.Claverie, Solid State Phenomena Vols. 108-109, pp.71-76, 2005.

Electrical properties ofnanocontacts on silicon nanoparticles embedded in thin SiO₂,synthesized by ultralow energy ion implantation, G.BenAssayag, M.Shalchian,H.Coffin, A.Claverie,  J.Grisolia, C.Dumas, S.M.Atarodi, Journal of Vaccum Science and Technology B vol.23, issue 6,p.2821, 2005.

- Photoluminescence characterization offew-nanocrystals electronic devices, A. Arbouet, M. Carrada, F. Demangeot, V.Paillard, G. BenAssayag, C. Bonafos, A. Claverie, S. Schamm, C. Dumas, J.Grisolia, M.A.F. Van den Boogaart, J. Brugger, L. Doeswijk, Journal of Luminescence 121, pp.340-34,2006.

- Influenceof the thickness of the tunnel layer on the charging characteristics of Sinanocrystals embedded in an ultra-thin SiO₂ layer, C. Dumas, J. Grisolia, G.BenAssayag, C. Bonafos, S. Schamm , A.Claverie, A.Arbouet, M. Carrada, V. Paillard, M. Shalchian, Physica E 38, pp.80-84, 2007.

- Photoluminescencespectroscopy and transport electrical measurements reveal the quantizedfeatures of Si nanocrystals embedded in an ultra thin SiO₂ layer,C.Dumas, J.Grisolia, M.Carrada, A.Arbouet, V.Paillard, G.BenAssayag, C.Bonafos,S.Schamm, A.Claverie, Physica statussolidi c, 4, n°2, pp.311-315, 2007.

Synthesisof localized 2D-layers of silicon nanoparticles embedded in a SiO₂layer by a stencil-masked ultra-low energy ion implantation process, C.Dumas,J.Grisolia, L.Ressier, A.Arbouet, V.Paillard, G.Ben Assayag, A.Claverie,M.A.F.van den Boogaart, J.Brugger, Physica status solidi a, 204, n°2,pp.487-491, 2007.

- Silicon nanoparticles synthesized in SiO₂pockets by stencil-masked low-energy ion implantation and thermal annealing,J.Grisolia, C.Dumas, G.BenAssayag, C.Bonafos, S.Schamm, A.Arbouet, V.Paillard,M.A.F. van den Boogaart, J.Brugger, P.Normand, Superlattices and Microstructure 44(2008)395-400, doi: 10.1016/j.spmi.2007.12.013, 2008.

- KFMdetection of charges injected by AFM into a thin SiO₂ layercontaining Si nanocrystals, C.Dumas, L.Ressier, J.Grisolia, A.Arbouet,V.Paillard, G.BenAssayag, S.Schamm, P.Normand, Microelectronics Engineering, doi: 10.1016/j.mee.2008.09.027.

- Synthèse locale et adressage de nanoparticules de Si dansune couche de SiO₂ par implantation ionique et lithographie stencil, JournéesNationales de Réseau Doctoral en Microélectronique, 2008.

- Controlledsynthesis of silicon nanocrystals into a thin SiO₂ layer synthesizedby stencil-masked ultra-low energy ion implantation, Journées Nationales sur les TechnologiesEmergentes pour la micro et nano fabrication (LAAS), 2008.