ATER, Université d'Aix-Marseille
Domaine d'activité : couches minces, épitaxie
Publications:
On morphology and strain field of Ge/ Si(001) islands according to TEM phase imaging method.
Donnadieu P, Gouyé A, Neisius T, Amiard G, Ronda A, Berbezier I.
J. Nanosci. Nanotechnol. A paraître (2010).
Insights into Solid Phase Epitaxy of Ultrahighly Doped Silicon.
Gouyé A, Berbezier I, Favre L, Aouassa M, Amiard G, Ronda A, Campidelli Y and Halimaoui A.
J. Appl. Phys. 108 (2010) 013513.
Low-Temperature Solid Phase Epitaxy For Integrating Advanced Source/Drain Metal-Oxide-Semiconductor Structures.
Gouyé A, Berbezier I, Favre L, Amiard G, Aouassa M, Campidelli Y and Halimaoui A.
Appl. Phys. Lett. 96 (2010) 063102.
On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates.
Cherkashin N, Hÿtch M J, Houdellier F, Hüe F, Paillard V, Claverie A, Gouyé A, Kermarrec O, Rouchon D, Burdin M, and Holliger P.
Appl. Phys. Lett. 94 (2009) 141910.
Selective growth of tensily strained Si1-yCy films on patterned Si substrates.
Gouyé A, Hüe F, Halimaoui A, Kermarrec O, Campidelli Y, Hÿtch M J, Houdellier F, Claverie A, and Bensahel D.
Mat. Sci. Semicond. Proc. 12 (2009) 34-39.
Low-temperature RP-CVD of Si, SiGe alloy, and Si1-yCy films on Si substrates using trisilane (Silcore®).
Gouyé A, Kermarrec O, Halimaoui A, Campidelli Y, Rouchon D, Burdin M, Holliger P, and Bensahel D.
J. Cryst. Growth, 311 (2009) 3522-3527.
Critical analysis of different techniques for measuring strain in Si1-yCy layers grown by CVD on a Si substrate.
Cherkashin N, Gouyé A, Hüe F, Houdellier F, Hÿtch M J, Kermarrec O, Rouchon D, Burdin M, Holliger P, and Claverie A.
ECS Trans. 13 (2008) 299-307.
