 | Mathieu Moreau |
| IM2NP Equipe Projet "RFID-Capteurs" | |
| téléphone : 04 96 13 98 19 | |
| mail : mathieu.moreau@im2np.fr |
| | Mathieu Moreau |
| IM2NP Equipe Projet "RFID-Capteurs" | |
| téléphone : 04 96 13 98 19 | |
| mail : mathieu.moreau@im2np.fr |
ATER (Université d'Aix-Marseille)
- Simulation numérique et modélisation compacte de dispositifs nanométriques (ex: transistor Double-Grille à Grilles indépendantes).
- Etude des effets électrostatiques et quantiques (confinement et transport électronique) pour des composants à base de silicium ou de matériaux innovants [diélectriques de grilles high-k et matériaux à forte mobilité (Ge, III-V))
- Caractérisation et modélisation de composants organiques élémentaires (diodes, transistors) pour des applications RFID.
Publications :
Revues internationales à comité de lecture
[1] M. Moreau, D. Munteanu, and J. L. Autran, “Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor”, Japanese Journal of Applied Physics, Vol. 47, No. 9, pp. 7013-7018, 2008. (doi : 10.1143/JJAP.47.7013)
[2] D. Munteanu, M. Moreau, and J. L. Autran, “A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs”, Molecular Simulation, Vol. 35, No. 6, pp. 491-497, 2009. (doi : 10.1080/08927020902801548)
[3] M. Moreau, D. Munteanu, J. L. Autran, F. Bellenger, J. Mitard, and M. Houssa, “Investigation of Capacitance-Voltage Characteristics in Ge/High-κ MOS Devices”, Journal of Non-Crystalline Solids, Vol. 355, pp. 1171-1175, 2009. (doi : 10.1016/j.jnoncrysol.2009.01.056)
[4] D. Munteanu, J. L. Autran, M. Moreau, and M. Houssa, “Electron Transport through High- κ Dielectric Barriers: A Non-Equilibrium Green’s Function (NEGF) Study”, Journal of Non-Crystalline Solids, Vol. 355, pp. 1180-1184, 2009. (doi : 10.1016/j.jnoncrysol.2009.03.006)
[5] M. Moreau, D. Munteanu, and J. L. Autran, “Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-κ Dielectric Stack using the Non-equilibrium Green’s Function Formalism”, Japanese Journal of Applied Physics, Vol. 48, No. 11, pp. 1114091-1114098, 2009. (doi : 10.1143/JJAP.48.111409)
[6] M. Moreau, D. Munteanu, and J. L. Autran, “Simulation Study of Short-Channel Effects and Quantum Confinement in Double-Gate FinFET Devices with High-Mobility Materials”, sous presse, Microelectronic Engineering, 2010. (doi : 10.1016/j.mee.2010.08.026)
[7] D. Munteanu, J. L. Autran, and M. Moreau, “Quantum Compact Model of Drain Current in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors”, accepté pour publication dans Japanese Journal of Applied Physics, (parution en 2011).
[8] D. Munteanu, M. Moreau, and J. L. Autran, “Effects of gate stack parasitic charge on current-voltage characteristics of Double-Gate MOSFETs with high-permittivity dielectrics and Ge-channel”, accepté pour publication dans Journal of Non-Crystalline Solids, (parution en 2011).
Conférences internationales à comité de lecture
[1] D. Munteanu, M. Moreau, and J. L. Autran, “Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs”, NSTI Nanotech Conference, Workshop on Compact Modeling 2008 (WCM 2008), June 1st - 5th, 2008, Boston, MA, USA. Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Vol. 3, 2008, pp. 877-880. (ISBN : 978-1-4200-8511-2). (poster)
[2] M. Moreau, D. Munteanu, J. L. Autran, F. Bellenger, J. Mitard, and M. Houssa, “Investigation of Capacitance-Voltage Characteristics in Ge/High-κ MOS Devices”, 7th Symposium SiO2 Advanced Dielectrics and Related Devices, June 30th - July 2nd, 2008, Saint-Etienne, France. Proceedings, 2008, pp. 107-108. (poster)
[3] D. Munteanu, J. L. Autran, M. Moreau, and M. Houssa, “Electron Transport through High- κ Dielectric Barriers: A Non-Equilibrium Green’s Function (NEGF) Study”, 7th Symposium SiO2 Advanced Dielectrics and Related Devices, June 30th - July 2nd, 2008, Saint-Etienne, France. Proceedings, 2008, pp. 161-162. (poster)
[4] M. Moreau, D. Munteanu, and J. L. Autran, “Quantum Simulation Analysis of Gate Tunneling Current in High-κ Gate Stack MIM Capacitors”, 39th European Solid-State Device Research Conference (Fringe-ESSDERC09), September 14th – 18th, 2009, Athens, Greece. (poster) (ISBN : 978-1-4244-4353-6).
[5] M. Moreau, D. Munteanu, J. L. Autran, F. Bellenger, J. Mitard, and M. Houssa, “Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices”, in High-k Dielectrics on Semiconductors with High Carrier Mobility (edited by P.D. Ye, M. Hong, W. Tsai, A. Dimoulas), Materials Research Society Symposium Proceedings, Vol. 1194E, 1194-A02-02, 2010 (Proceedings of MRS 2009 Fall Meeting, November 30th - December 4th, Boston, MA, USA). (oral) (doi : 10.1557/PROC-1194-A02-02)
[6] M. Moreau, D. Munteanu, J. L. Autran, “Simulation Study of Short-Channel Effects and Quantum Confinement in Double-Gate FinFET Devices with High-Mobility Materials”, European-Material Research Society (E-MRS) 2010 Spring Meeting, symposium H : Post-Si CMOS electronic devices : the role of Ge and III-V materials, June 7th – 11th, 2010, Strasbourg, France. (oral)
Autres communications
[1] M. Moreau, “Simulation quantique du courant de fuite de grille dans les capacités MIM à base de matériau high-κ", Journée des doctorants de l'ED353, 25 février 2010, Marseille, France.
