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We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands.[...]
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Nanoscale, advance article, 2016

As the characteristic length scale of electronic devices shrinks, so does the required scale for measurement techniques to provide useful feedback during development and fabrication. The current capabilities of atom probe tomography (APT), such as detecting a low number of dopant atoms in nanoscale devices or studying diffusion effects in a nanowire (NW), make this technique important for metrology on the nanoscale. Here we review recent APT investigations applied to transistors (including regions such as gate oxide, channel, source, drain, contacts, etc.), heterogeneous dopant incorporation in NWs, and Pt-based nanoparticles.
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MRS Bulletin, 41, 01, 30-34, January 2016



AFC 2016 - Congrès de l'Association Française de Cristallographie
Marseille, 4-7 juillet 2016

6th International Conference on NANOstructures and nanomaterials SElf-Assembly (NANOSEA)
Giardini Naxos (Me, Italy), July 3-8, 2016

Conférence Nationale sur les Processus ULtimes d’épitaxie des SEmiconducteurs
Marseille, 30 Mai - 3 Juin 2016

Journées Surfaces et Interfaces 2016
Marseille, 27-29 janvier 2016

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IM2NP - Unité Mixte de Recherche 7334 CNRS & Universités d'Aix-Marseille et de Toulon
Directeur : Rachid Bouchakour | adresse administrative : Faculté des Sciences
Avenue Escadrille Normandie Niemen - Case 142 - 13397 Marseille Cedex 20 (France)
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