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Understanding and mastering the structure of materials at various scales (from µm to nm) is the goal of MNS Department. Targeted applications are not only in micro and nano- electronics but also in the field of materials for energy (solar energy, nuclear fission and fusion). Research topics cover various aspects: growth (epitaxy, solidification from the melt, reactive diffusion), structure (electron microscopy, x-ray scattering, atom probe), physical properties (magnetism, electronic properties, mechanical properties, …) and simulation at various scales (phase field, molecular dynamics, ab initio, …).
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MNE Department gathers seven research teams whose activities cover the main trends in micro and nanoelectronics, from fundamental approach on materials and innovative devices up to circuit design and signal processing. In addition to prospective activity on various scientific areas (ultimate devices, memories, microsensors, photovoltaic…), MNE department is involved in close industrial partnerships and contributes to networks enabling regional and national economic developments. Finally, it supports several scientific and technological platforms such as ASTEP, Rosetta and CIM PACA.
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INTERFACIAL REACTIVITY AND DIFFUSION
The team deals with the interfacial reactivity and the transport of matter in particular at the nanometric scale. Our goals are the experimental study of the phenomena by innovative techniques, the analysis of the relevant parameters and the understanding/modelling of the mechanisms.
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SELF-ORGANIZED GROWTH MICROSTRUCTURES
Formation of the solidification microstructure and grain structure in materials processing, and interaction with convection: (inter)metallic systems, semiconductors (polycrystalline Si), transparent analogues. Characterization of the dynamics of the phenomena by in situ observation: optical methods, synchrotron X-ray imaging. Microgravity experiments.
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NANOSTRUCTURATION
Investigation of self-assembled organic nanostructures and thin films on solid surfaces from tailored molecular precursors. In situ characterization of organic/solid interfaces by STM, nc-AFM and electron spectroscopies (XPS,UPS, IPE). Development of advanced experimentation ( non-contact AFM ).
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EPITAXIAL SEMICONDUCTOR NANOSTRUCTURES
Epitaxial growth of semiconductor SiGe nanostructures for applications in micro nano and optoelectronic is shared in two parts: first understanding fundamental mechanisms and second development of new processes/materials allowing the integration of novel functionalities in devices for nanoelectronics.
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EXTENDED DEFECTS AND NANO-OBJECTS :
STRUCTURE AND THERMODYNAMICS
Small objects or 2D, 1D structural defects (precipitates, nano-cavities, grain boundaries, dislocations…) involve surface line effects which modify the systems equilibria inducing new microstructures and properties. The group is involved in studies of both structural properties and thermodynamics of these nano-objects.
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STRESSES IN OBJECTS WITH SMALL DIMENSION
Strain fields in nanostructured materials are studied by X-ray scattering (synchrotron radiation, coherent diffraction, micro-diffraction) and by atomistic and mesoscopic simulations. We focus on mechanical properties in small dimensions and on the coupling between diffusion and stress.
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MAGNETISM
The magnetism of nanostructured materials is studied by magnetic spin resonance. We focus on the research of new magnetic semiconductors for spintronics, molecular magnetism, the realization and manipulation of solid state qubits.
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THEORY, MODELLING AND NUMERICAL SIMULATION
Our theoretical and numerical studies concern the growth, the structure and the properties of nanostructured materials, semi-conductors, magnetic solids, and binary alloys. We favour the combination of different techniques to obtain more significant results.
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ULTIMATE SILICIUM DEVICES
The team develops research activities on electrical characterization, compact modeling and numerical simulations of advanced MOS transistors, devices with nanometric dimensions enabling extension beyond present silicon roadmap.
| | | MEMORIES
The team addresses a large panel of memory devices (isolated or in matrix) in using an approach from material studies up to design of test vehicles and softwares. Besides, modeling, simulation, characterization and reliability analyzes are developed on memory cells with innovating architecture.
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INTEGRATED CIRCUIT DESIGN
CCI team develops innovative integrated systems from standard CMOS technologies. Main applications are miniature communicating objects for wireless and RFID. The areas of expertise cover High Frequency and wideband front-ends and low cost and power System On Chip.
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RFID-SENSORS
This federative team develops a transverse research activity targeting RFID applications. It relies on the expertise of different teams of IM2NP. Its purpose is to innovate and offer new research areas for RFID and elaborate a prototype to demonstrate IM2NP skills.
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MICROSENSORS
The works of the team aim to improve the performance of microsensors and multisensors (gas, light, temperature) through the use of materials with remarkable properties and the development of new concepts and methods of acquisition and data processing.
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OPTOELECTRONICS AND PHOTOVOLTAICS COMPONENTS
The OPTO-PV team is involved in research programs both on silicon and organic solar cells (modeling, fabrication, material morphology, electronic and optical properties) and on optical nanostructurated materials applied to antireflective surfaces and optical sensors.
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SIGNALS AND SYSTEMS
Both fundamental and industrial approaches are developed in the research team. The signal processing is developed through various themes such as stochastic adapted filtering, wire transmission, smart cards security or communication protocols at 2.45 GHz.
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