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NANOSEA International Conference

International SINANO Workshop on
Epitaxy for Si nanoelectronics

Congress Center, Aix-en-Provence, France, 6-7 July 2006

                                     

Organised by :
Erich Kasper (University of Stuttgart, Institut für Halbleitertechnik),
Isabelle Berbezier (IM2NP, CNRS, Faculté des Sciences et Techniques, Campus de Saint Jérôme)
Klara Lyutovich (University of Stuttgart, Institut für Halbleitertechnik)

in conjunction with
International Conference on Nano-Structures Self-Assembling NANO SEA 2006 (2-6 July 2006)

Venue
The Workshop takes place in the Milhaud hall of the Congress Center, Aix-en-Provence, France, on July 6th and 7th, 2006

Scope
We will bring together experts in epitaxy techniques and microelectronics engineers to discuss the needs and opportunities of Si nanoelectronics:

  • Materials and equipment for epitaxy
  • Novel strained-Si platforms for advanced CMOS
  • In situ process control and ex situ characterisation techniques
  • Epitaxial foundry supply : status and prospects
  • Silicon-based heterostructures and self-organised nanostructures
Registration
Please use the free registration form : Registration.doc
On site registration (July, 6th, 13:00 – 14:00) is only possible for a limited workshop participant number. On site registration fee amounts to 150 €.

Accomodation
Please use the NANO SEA website for the hotel reservation: http://www.IM2NP.fr/nanosea/accomodation.html

Contact
Klara Lyutovich (lyutovich@iht.uni-stuttgart.de)
Universität Stuttgart, Institut für Halbleitertechnik, Pfaffenwaldring 47.    70569 Stuttgart, Germany
Phone : +49-711-685-8005   
Fax : +49-711-685-8044

Website
http://www.iht.uni-stuttgart.de/SINANOworkshop

Program

Thursday, July 6th

Time

Title

Speaker

14:00

Epsilon® Series Single-Wafer Epitaxial CVD Reactors

K.-H. König, S. Sienz

14:30

Si and SiGe layer growth studies using a novel CVD reactor design

M. Goryll

14:50

Fabrication and Characterisation of Strained Silicon on SOI

S. Mantl

15:20

Double-channel FETs

J.-M. Hartmann

 15:50

 Coffee break

  

16:10

Germanium Channels for CMOS ... Facts and   Fantasies (pdf)

A.R. Peaker

16:40

MOSFET devices on epitaxially grown strained Si

P.-E. Hellström

17:10

Si:C and SiGe:C: from growth to device application

F. Ducroquet

17:40

End of the afternoon session

 

 Friday, July 7th

9:00 

Device-related characterization techniques for Si/SiGe heterostructures (pdf)

A. O’Neill

9:30

Micro-loading effects in SiGe layers for recessed S/D (pdf)

C. Walczyk

9:50

Germanium and Boron co-diffusion in Silicon from B-doped Ge deposited layers. Application to formation of SiGe ultra-shallow junctions (pdf)

M. Gavelle

10:10

Redistribution of doping elements in SiGe nanostructures (pdf)

J.P. Ayoub

 10:30

 Coffee break 

  

11:00

Challenges and requirements of SiGe epitaxial foundry supply

T. Grasby

11:30

Fast Ge/Si photodetectors

E. Kasper

 12:00

 Lunch 

  

14:00

Morphological evolution of SiGe nanostructures (pdf)

I. Berbezier

14:30

Ge quantum dots on pre-patterned substrates

D. Bouchier

15:00

Nanostructure formation on ion eroded SiGe and Si surfaces

C. Hofer

 15:20

 Coffee break

  

15:40-17:30

Open Discussion Forum:”Future Needs and Directions”.