 | Jean-Luc Autran |
| IM2NP Bât. IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France | |
| téléphone : +33 (0) 4 96 13 97 17 mobile : +33 (0) 6 81 57 88 17 fax : +33 (0) 4 96 13 97 09 | |
| mail : jean-luc.autran@im2np.fr |
Professeur, Université de Provence
Membre de l'Institut Universitaire de France
Micro et nanoélectronique : transistors MOS ultimes, nanocomposants sur silicium, transport et effets quantiques (confinement, effet tunnel), modélisation compacte, simulation numérique, effet du rayonnement naturel sur les composants et circuits nanométriques
Publications récentes : Liste complète des publications et conférences : [.pdf]
Ouvrages et revues (co-)édités
O1. “Structure and defects in SiO2 : fundamentals and applications”
R.A.B. Devine, G. Spinolo, J.L. Autran, A. Vedda (Editors).
Special Issue, Journal of Non-Crystalline Solids, Volume 216, 217 pages (Elsevier Science B.V., 1997).
O2. “SiO2 and advanced dielectrics”
G. Spinolo, A. Vedda, J.L. Autran, R.A.B. Devine (Editors)
Special Issue, Journal of Non-Crystalline Solids, Volume 245, 253 pages (Elsevier Science B.V., 1999).
O3. “SiO2 and advanced dielectrics II”
P. Paillet, A. Vedda, G. Spinolo, J.L. Autran, (Editors)
Special Issue, Journal of Non-Crystalline Solids, Volume 280, 299 pages (Elsevier Science B.V., 2001).
O4. Proceedings of the 6th European Conference “Radiation and its Effects on Components and
Systems” J.L. Autran (Editor)
Proceedings IEEE 01TH8605C (The Institute of Electrical and Electronics Engineers, 2002).
O5. IEEE Transactions on Nuclear Science
J.L. Autran (Guest Editor)
Volume NS-49, N°3, June 2002 (The Institute of Electrical and Electronics Engineers, 2002). J.L. Autran,
O6. “SiO2 and advanced dielectrics III”
M. Ferrari, D. Munteanu, M. Passacantando, A. Vedda (Editors)
Special Issue, Journal of Non-Crystalline Solids, Volume 322 (Elsevier Science B.V., 2003).
O7. Proceedings of the 7th European Conference “Radiation and its Effects on Components and
Systems” M. van Uffelen, R. Sharp (Guest Editors), J.L. Autran (IEEE Liaison Editor)
Proceedings IEEE N°03TH8776 (The Institute of Electrical and Electronics Engineers, 2002).
O8. IEEE Transactions on Nuclear Science
M. van Uffelen, R. Sharp (Guest Editors), J.L. Autran (IEEE Liaison Editor)
Volume NS-51, N°5, October 2004 (The Institute of Electrical and Electronics Engineers, 2004).
O9. “SiO2, advanced dielectrics and related devices”
A. Vedda, D. Munteanu, P. Paillet, M. Ferrari, J.L. Autran (Editors) Special Issue, Journal of Non-Crystalline Solids, Volume 351 (Elsevier Science B.V., 2005).
O10. Proceedings of the 8th European Conference “Radiation and its Effects on Components and
Systems” J.L. Autran (Guest Editor)
Proceedings IEEE N°05TH8849 (The Institute of Electrical and Electronics Engineers, 2006).
O11. IEEE Transactions on Nuclear Science
J. S. Schwank (Guest Editor),,J. Felix, P. Paillet J.L. Autran, (Assistant Editors)
Volume NS-53, N°4, August 2006 (The Institute of Electrical and Electronics Engineers, 2006).
Chapitres d’ouvrage, articles de synthèse et cours invités
P1. “Charge pumping techniques : the methods and their applications”
J.L. Autran, B. Balland, G. Barbottin
in "Instabilities in Silicon Devices - Silicon Passivation and Related Instabilities", edited by G.
Barbottin and A. Vapaille (Elsevier Science Publishers North-Holland, Amsterdam, 1999), Volume 3,
Chapitre 6, p. 405-493.
P2. “Tantalum pentoxide (Ta2O5) thin films for microelectronics applications”
C. Chaneliere, J.L. Autran, R.A.B. Devine, B. Balland
Special Issue, Materials Science and Engineering Reports, 1998, Vol. 22, N°6, p. 263-322.
P3. “Challenges in interface trap characterization of deep sub-micron MOS devices using charge
pumping techniques” (invited)
J.L. Autran, P. Masson, G. Ghibaudo
Material Research Society Symposium Proceedings, 2000, Vol. 592, p. 275-288.
P4. “Challenges in Microelectronics : Ultimate gate dielectrics for CMOS technologies, limitations and
alternative solutions” (invited)
G. Ghibaudo, R. Clerc, E. Vincent, S. Bruyère, J.L. Autran
Comptes-rendus de l’Académie des Sciences Paris, 2000, Tome 1, Série IV, p. 911-927.
P5. “Electrical characterization, modeling and simulation of high-k based MOS devices”
J.L. Autran, D. Munteanu, M. Houssa
in “Fundamental and Technological Aspects of High-k Gate Dielectrics”, Edited by M. Houssa
(Institute of Physics Publishing, London, 2004), Chapter 3.4, p. 251-289.
P6. “Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric
gate stack” (invited)
J.L. Autran, D. Munteanu, M. Houssa
Material Research Society Symposium Proceedings, 2004, Vol. 811, p. D6-1.
P7. “Modeling of digital devices and ICs submitted to transient irradiations” (invited)
D. Munteanu, J.L. Autran,
Short Course RADECS 2007 (9th European Conference on Radiation and Its Effects on Components and
Systems, Deauville, 10-14 septembre 2007, France).
P8. “Compact modeling of independent double-gate MOSFETs: a physical approach”
D. Munteanu, J.L. Autran
in “Planar double-gate transistor: from technology to circuit”, Edited by A. Amara and O. Rozeau
(Springer-Verlag, Berlin, 2008), Chapter 3, in press.
Publications dans des journaux internationaux
P9. J.L. Autran, F. Djahli, B. Balland, C. Plossu, LM. Gaborieau, "Three-level charge pumping on
submicronic MOS transistors", Solid State Communications, 1992, Vol. 84, N°6, p. 604-611.
P10. J.L. Autran, F. Seigneur, C. Plossu, B. Balland, "Characterization of Si-SiO2 interface states: Comparison
between different charge pumping and capacitance measurements", Journal of Applied Physics, 1993,
Vol. 74, N°6, p. 3932-3935.
P11. J.L. Autran, B. Balland, C. Plossu, F. Seigneur, L.M. Gaborieau, "Application du pompage de charge à
trois niveaux aux transistors MOS submicroniques", Journal de Physique III, 1993, Vol. 3, N°1, p. 33-45.
P12. J.L. Autran, F. Seigneur, J. Delmas, C. Plossu, B. Balland, "Caractérisation des états d'interface dans des
transistors MOS submicroniques par différentes techniques de pompage de charge", Journal de Physique
III, 1993, Vol. 3, N°10, p. 1947-1961.
P13. F. Djahli, J.L. Autran, C. Plossu, B. Balland, "Use of the charge pumping technique to understand nonuniform
n-channel MOSFET's degradation", Material Science and Engineering B, 1994,Vol. 23, p. 120-
122.
P14. C. Raynaud, J.L. Autran, B. Balland, G. Guillot, T. Billon, C. Jaussaud, "Electrical characterization of
instabilities in 6H SiC metal-oxide-semiconductor structure", Journal of Applied Physics, 1994, Vol. 76,
N°2, p. 993-997.
P15. C. Raynaud, J.L. Autran, F. Seigneur, T. Billon, C. Jaussaud, G. Guillot, B. Balland, "Instabilités dans les
structures MOS 6H SiC", Journal de Physique III, 1994, Vol. 4, N°5, p. 937-952.
P16. J.L. Autran, B. Balland, "A new 3-level charge pumping method for accurate determination of interface
trap parameters in metal-oxide-semiconductor field-effect-transistors", Review of Scientific Instruments,
1994, Vol. 65, N°6, p. 2141-2142.
P17. J.L. Autran, J.P. Vallard, B. Balland, D. Babot, "Etude par pompage de charge à 3 niveaux des défauts de
l'interface Si-SiO2 induits par des rayonnements ionisants", Journal de Physique III, 1994, Vol. 4, N°9, p.
1707-1721.
P18. C. Raynaud, J.L. Autran, J.B. Briot, B. Balland, G. Guillot, T. Billon, C. Jaussaud, "Ionic contamination
in Metal-Oxide-Semiconductor Al/SiO2/3C-SiC structures", Journal of the Electrochemical Society, 1995,
Vol. 142, N°1, p. 282-285.
P19. J.L. Autran, B. Balland, D. Babot, "3-level charge pumping study of radiation-induced defects at Si-SiO2
interface in submicrometer MOS transistors", Journal of Non-Crystalline Solids, 1995, Vol. 187, p. 211-
215.
P20. C. Raynaud, J.L. Autran, J.B. Briot, B. Balland, N. Bécourt, C. Jaussaud, "Comparison of trappingdetrapping
properties of mobile charge in alkali contaminated metal-oxide silicon carbide structures",
Applied Physics Letters, 1995, Vol. 66, n°18, p. 2340-2342.
P21. J.L. Autran, C. Plossu, F. Seigneur, B. Balland, A. Straboni, "A comparison of Si-SiO2 interface traps
properties in thin-film transistors with thermal and plasma nitrided oxides", Journal of Non-Crystalline
Solids, 1995, Vol. 187, p. 374-379.
P22. J.L. Autran, P. Paillet, JL. Leray, R.A.B. Devine, "Conduction mechanisms and space charge effects in
typical thin film insulators (SiO2, Ta2O5, PbZrxTi1-xO3)", Le Vide : science, technique et applications,
1995, n°275, p. 44-53.
P23. C. Raynaud, J.L. Autran, JB. Briot, B. Balland, T. Billon, P. Lassagne, "Alkali contamination of native
oxides grown on 6H and 3C silicon carbide", Microelectronic Engineering, 1995, Vol. 28, p. 209-212.
P24. F. Seigneur, J.L. Autran, C. Plossu, B. Balland, D. Babot, A. Straboni, "Effect of 60Co and Fowler-
Nordheim injection on MOS capacitors with thin thermal nitrided gate oxides", Microelectronic
Engineering, 1995, Vol. 28, p. 345-348.
P25. J.L. Autran, P. Paillet, JL. Leray, R.A.B. Devine, "Conduction properties of amorphous Ta2O5 films
prepared by low pressure plasma enhanced vapor deposition", Sensors and Actuators A, 1995, Vol. A51,
p. 5-8.
P26. P. Paillet, J.L. Autran, JL. Leray, B. Aspar, A.J. Auberton-Hervé, "Trapping-detrapping properties of
irradiated ultra-thin SIMOX buried oxides", IEEE Transactions on Nuclear Science, 1995, Vol. NS-42, p.
2108-2113.
P27. P. Paillet, J.L. Autran, O. Flament, J.L. Leray, B. Aspar, A.J. Auberton-Hervé, "X-radiation response of
SIMOX buried oxides : influence of the fabrication process", IEEE Transactions on Nuclear Science,
1995, Vol. NS-43, p. 821-825.
P28. M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J.L. Autran, P. Paillet, J.L. Leray, R.A.B.
Devine, "Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides",
IEEE Transactions on Nuclear Science, 1996, Vol. NS-43, p. 845-850.
P29. R.A.B. Devine, L. Vallier, J.L. Autran, P. Paillet, J.L. Leray, "Electrical properties of Ta2O5 films
obtained by enhanced chemical vapor deposition using a TaF5 source", Applied Physics Letters, 1996,
Vol. 68, N°13, p. 1775-1777.
P30. J.L. Autran, C. Chabrerie, "Use of the charge pumping method with a sinusoidal gate waveform", Solid-
State Electronics, 1996, Vol. 39, p. 1394-1395.
P31. O. Flament, J.L. Autran, O. Musseau, J.L. Leray, E. Orsier, R. Truche, "Enhanced damage in junction
field effect transistors and related linear integrated circuits", IEEE Transactions on Nuclear Science,
1996, Vol. NS-43, p. 3060-3067.
P32. M. Rouméguère, J.L. Leray, O. Flament, J.L. Autran, "DMILL : la filière électronique pour des
environnements radiatifs intenses", Chocs, Revue Scientifique et Technique de la Direction des
Applications Militaires du CEA, 1996, n° 15, p. 91-93.
P33. J.L. Autran, C. Chabrerie, O. Flament, P. Paillet, J.L. Leray, J.C. Boudenot, "Radiation-induced interface
traps in hardened MOS transistors : an improved charge-pumping study", IEEE Transactions on Nuclear
Science, 1996, Vol. NS-43, p. 2547-2557.
P34. J.L. Leray, P. Paillet, J.L. Autran, "An overview of buried oxides on silicon : new processes and radiation
effects", Journal de Physique III, 1996, Vol. 6, p. 1625-1646.
P35. J.L. Leray, O. Musseau, P. Paillet, J.L Autran, F. Sodi, Y.M. Coïc, "Radiation effects in thin-film
ferroelectric PZT for non-volatile memory applications in microelectronics", Journal de Physique III,
1997, Vol. 7, p. 1227-1243.
P36. S. Pierunek, J.L. Autran, B. Balland, B. Leroy, L.M. Gaborieau, "Location of individual traps in DRAM
cell transistors by charge pumping technique", Microelectronic Engineering, 1997, Vol. 36, n°1, p. 83-86.
P37. R.A.B. Devine, C. Chaneliere, J.L. Autran, B. Balland, P. Paillet, J.L. Leray, "Use of carbon-free Ta2O5
thin-films as a gate insulator", Microelectronic Engineering, 1997, Vol. 36, n°1, p. 61-64.
P38. O. Gruber, P. Paillet, J.L. Autran, B. Aspar, A.J. Auberton-Hervé, "Charge trapping in SIMOX and
UNIBOND oxides", Microelectronic Engineering, 1997, Vol. 36, n°1, p. 387-390.
P39. J.L. Autran, R.A.B. Devine, C. Chaneliere, B. Balland, "Fabrication and characterization of Si-
MOSFET’s with PECVD amorphous Ta2O5 gate insulator", IEEE Electron Device Letters, 1997, Vol. 18,
n°9, p. 447-449.
P40. C. Chabrerie, J.L. Autran, P. Paillet, O. Flament, J.L. Leray, J.C. Boudenot, "Modélisation et simulation
numérique de phénomènes activés par la température : application aux effets post-irradiation", Revue de
l’Electricité et de l’Electronique, 1997, n°4, p. 75-78.
P41. R.A.B. Devine, J.L. Autran, W.L. Warren, K.L. Vanheusden, J.C. Rostaing, "Interfacial hardness
enhancement in deuterium annealed 0.25 £gm channel metal-oxide-semiconductor transistors", Applied
Physics Letters, 1997, Vol. 70, n°22, p. 2999-3001.
P42. C. Chabrerie, J.L. Autran, P. Paillet, O. Flament, J.L. Leray, J.C. Boudenot, "Isothermal and isochronal
annealing methodology to study post-irradiation temperature activated phenomena", IEEE Transactions
on Nuclear Science, 1997, Vol. NS-44, 2007-2012.
P43. O. Flament, J.L. Autran, P. Paillet, P. Roche, O. Faynot, R. Truche, "Charge pumping analysis of
radiation effects in LOCOS parasitic transistors", IEEE Transactions on Nuclear Science, 1997, Vol. NS-
44, p. 1930-1938.
P44. P. Masson, J.L. Autran, C. Raynaud, O. Flament, P. Paillet, C. Chabrerie, "Surface Potential
Determination in Irradiated MOS Transistors Combining Current-Voltage and Charge Pumping
Measurements", IEEE Transactions on Nuclear Science, 1998, Vol. NS-45, p. 1355-364.
P45. C. Chabrerie, J.L. Autran, O. Flament and J.C. Boudenot, "A New Integrated Test Structure for on-chip
Post-Irradiation Annealing in MOS Devices", IEEE Transactions on Nuclear Science, 1998, Vol. NS-45,
p. 1438-1443.
P46. M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J.L. Leray, P. Paillet, J.L. Autran, R.A.B.
Devine, "Radiation induced trap levels in SIMOX oxides : low temperature thermally stimulated
luminescence", IEEE Transactions on Nuclear Science, 1998, Vol. NS-45, 1396-1401.
P47. J.L.Cantin, H.J. von Bardeleben, J.L. Autran, "Irradiation effects in ultrathin Si/SiO2 structures", IEEE
Transactions on Nuclear Science, 1998, Vol. 45, p. 1407-1411.
P48. C. Chaneliere, S. Four, J.L. Autran, R.A.B. Devine, N.P. Sandler, "Properties of amorphous and
crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor", Journal of Applied Physics,
1998, Vol. 83, p. 4823-4829.
P49. P. Masson, G. Ghibaudo, J.L. Autran, P. Morfouli, J. Brini, "Influence of the quadratic mobility
degradation factor on the low frequency noise spectral density in MOS transistors", Electronics Letters,
1998, Vol. 34, 1977-1979.
P50. C. Chaneliere, S. Four, J.L. Autran, R.A.B. Devine, "Comparison between the properties of amorphous
and crystalline Ta2O5 thin films on Si", Microelectronics Reliability, 1999, Vol. 39, p. 261-268.
P51. S. Pierunek, D. Pogany, J.L. Autran, B. Leroy, "Study of hot carrier degradation in DRAM cells
combining RTS and charge pumping measurements", Journal of Non-Crystalline Solids, 1999, Vol. 245,
p. 59-66.
P52. P. Masson, J.L. Autran, J. Brini, "On the tunneling component of charge pumping current in ultra-thin
gate oxide MOSFET’s", IEEE Electron Device Letters, 1999, Vol. 20, p. 92-94.
P53. A. Pêcheur, J.L. Autran, J.P. Lazzari, P. Pinard, "Properties of SiO2 films deposited at low temperature by
plasma enhanced decomposition of hexamethyldisilazane", Journal of Non Crystalline Solids, 1999, Vol.
245, p. 20-26.
P54. C. Chaneliere, J.L. Autran, S. Four, R.A.B. Devine, "Theoretical and experimental study of the
conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures", Journal of Non Crystalline
Solids, 1999, Vol. 245, p. 73-78.
P55. P. Masson, P. Morfouli, J.L. Autran, J. Brini, B. Balland, E.M. Vogel, J.J Wortman, "Electrical properties
of oxinitride thin films using noise and charge pumping measurements", Journal of Non Crystalline
Solids, 1999, Vol. 245, p. 54-58.
P56. C. Chaneliere, J.L. Autran, R.A.B. Devine, "Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4
stacked structures on Si", Journal of Applied Physics, 1999, Vol. 86, p. 480-486.
P57. C. Chaneliere, S. Four, J.L. Autran, R.A.B. Devine, "Dielectric permittivity of amorphous and hexagonal
electron cyclotron resonance plasma deposited Ta2O5 thin films", Electrochemical and Solid-State Letters,
1999, Vol. 2, p. 291-293.
P58. C. Raynaud, J.L. Autran, "Theoretical investigation of incomplete ionization of dopants in 6H-SiC metaloxide-
semiconductor capacitors", Journal of Applied Physics, 1999, Vol. 86, p. 2232-2236.
P59. P. Masson, P. Morfouli, J.L. Autran, J.J. Wortman, " Electrical characterization of n-channel MOSFET's
with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition",
Microelectronic Engineering, 1999, Vol. 48, p. 211-214.
P60. S. Croci, J.M. Voisin, C. Plossu, C. Raynaud, J.L. Autran, P. Boivin, J.M. Mirabel, "Extraction and
evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic
degradation", Microelectronics Reliability, 1999, Vol. 39, p. 879-884.
P61. J.L. Autran, P. Masson, N. Freud, C. Raynaud, C. Riekel, "Micro-irradiation experiments in MOS
transistors using synchrotron radiation", IEEE Transactions on Nuclear Science, 2000, Vol. 47, p. 574-
579.
P62. M. Bidaud, F. Guyader, F. Arnaud, J.L. Autran, K. Barla, "1.5-2.5 nm RTP gate oxides : process
feasibility, properties and limitations", Journal of Non-Crystalline Solids, 2001, Vol. 280, p. 32-38.
P63. P. Masson, J.L. Autran, G. Ghibaudo, "An improved time domain analysis of the charge pumping
technique", Journal of Non-Crystalline Solids, 2001, Vol. 280, p. 255-260.
P64. S. Croci, C. Plossu, B. Balland, J.L. Autran, P. Boivin, "Effect of TaSi2 and WSi2 deposition on
interfacial defects and Fowler-Nordheim injection in polycide gate SiO2 MOS capacitors", Journal de
Physique IV-Proceedings, 2001, Vol. PR11, p. 199-203.
P65. J. Suñé, X. Oriols, J.L. Autran, "Non-equilibrium gate tunneling current in ultra-thin oxide MOS
devices", Journal of Non-Crystalline Solids, 2001, Vol. 280, p. 127-131.
P66. N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, J.L. Autran,
"Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown
SiOx", Journal of Non-Crystalline Solids, 2001, Vol. 280, p. 69-77.
P67. S. Croci, A. Pêcheur, J.L. Autran, A. Vedda, F. Caccavale, M. Martini, G. Spinolo, "SiO2 films deposited
on silicon at low temperature by plasma enhanced decomposition of hexamethyldisilazane: defect
characterization", Journal of Vacuum Science and Technology A, 2001, Vol. 19, p. 2670-2675.
P68. P. Masson, J.L. Autran, D. Munteanu, "DYNAMOS : a numerical MOSFET model including quantummechanical
and near-interface trap transient effects", Solid-State Electronics, 2002, Vol. 46, p. 1051-
1059.
P69. X. Garros, C. Leroux, J.L. Autran, "An Efficient Model for Accurate C-V Characterization of High-k
Gate Dielectrics Using a Mercury Probe", Electrochemical and Solid-State Letters, 2002, Vol. 5, N°3, p.
F4-F6.
P70. P. Masson, J.L. Autran, X. Garros, C. Leroux, "Frequency characterization and modeling of interface
traps in metal-oxide-semiconductor structures with HfO2 gate dielectric from a capacitance point-ofview",
Applied Physics Letters, 2002, Vol. 81, p. 3392-3394.
P71. N. Cavassilas, J.L. Autran, F. Aniel, G. Fishman, "Energy and temperature dependence of electron
effective masses in silicon", Journal of Applied Physics, 2002, Vol. 92, p. 1431-1433.
P72. M. Houssa, J.L. Autran, V.V. Afanas’ev, A. Stesmans, and M.M. Heyns, “Defect generation in ultrathin
SiON/ZrO2 gate dielectric stacks”, Journal of the Electrochemical Society, Vol. 149, 2002, p F181.
P73. M. Houssa, J.L. Autran, A. Stesmans, M.M. Heyns, "Model for interface defect and positive charge
generation in ultrathin SiO2/ZrO2 gate dielectric stacks", Applied Physics Letters, 2002, Vol. 81, p. 709-
711.
P74. D. Munteanu, J.L. Autran, "Two-dimensional modeling of quantum ballistic transport in ultimate doublegate
SOI devices", Solid-State Electronics, 2003, Vol. 47, p. 1219-1225.
P75. M. Houssa, J.L. Autran, M.M. Heyns, and A. Stesmans, “Model for defect generation at the (100)Si/SiO2
interface during electron injection in MOS structures”, Applied Surface Science, 2002, Vol. 212–213, p.
749-752.
P76. J.L. Autran, D. Munteanu, "Tunneling Component of the Ballistic Current in Ultimate Double-Gate SOI
Devices", Electrochemical and Solid-State Letters, 2003, Vol. 6, p. G95-G97.
P77. J.L. Autran, D. Munteanu, "Les architectures innovantes sur silicium mince : un second souffle pour la loi
de Moore ?", Revue de l’Electricité et de l’Electronique, 2003, n°8, p. 21-31.
P78. M. Bescond, M. Lannoo, D. Goguenheim, J.L. Autran, "Towards a full microscopic approach to the
modeling of nanotransistors", Journal of Non-Crystalline Solids, 2003, Vol. 322, P. 160-167.
P79. S. Renard, P. Boivin, J.L. Autran, "New oxide quality characterization for charge leakage applications
using the floating-gate technique", Journal of Non-Crystalline Solids, 2003, Vol. 322, p. 179-182.
P80. D. Munteanu, J.L. Autran, E. Decarre, R. Dinescu, "Modeling of Quantum Ballistic Transport in Double-
Gate Devices with Ultimate Oxides", Journal of Non-Crystalline Solids, 2003, Vol. 322, p. 206-212.
P81. M. Houssa, C.R. Parthasarathy, N. Revil, J.L. Autran, "Model for negative bias temperature instability in
p-MOSFETS with ultrathin oxynitride layers", Journal of Non-Crystalline Solids, 2003, Vol. 322, p. 100-
104.
P82. J.L. Autran, D. Munteanu, R. Dinescu, M. Houssa, "Stretch-out of high-k MOS capacitance-voltage
characteristics resulting from a lateral non-uniform oxide charge distribution", Journal of Non-Crystalline
Solids, 2003, Vol. 322, 219-224.
P83. M. Houssa, C. Parthasarathy, N. Espreux, J.L. Autran, N. Revil, "Impact of nitrogen on negative bias
temperature instability in p-channel MOSFETs", Electrochemical and Solid-State Letters, 2003, Vol. 6, p.
G146-G148.
P84. M. Houssa, C. Bizzari, J.L. Autran, "Simulation of threshold voltage instabilities in HfySiOx and
SiO2/HfySiOx-based field-effect transistors", Applied Physics Letters, 2003, Vol. 83, p. 5065-5067.
P85. F. Payet, N. Cavassilas, J.L. Autran, "Theoretical investigation of hole phonon-velocity in strained
Si/SiGe MOSFET’s", Journal of Applied Physics, 2004, Vol. 95, p. 713-717.
P86. M. Bescond, J.L. Autran, D. Munteanu, M. Lannoo "Atomic-scale modeling of Double-Gate, MOSFETs
using a tight-binding Green’s function formalism", Solid-State Electronics, 2004, Vol. 48, p. 567-574.
P87. D. Deleruyelle, C. Le Royer, B. De Salvo, G. Le Carval, M. Gely, T. Baron, J.L. Autran, S. Deleonibus,
"A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals",
Microelectronic Engineering, 2004, Vol. 72, p. 399-404.
P88. M. Houssa, M. Aoulaiche, J.L. Autran, C. Parthasarathy, N. Revil, and E. Vincent , “Modeling negative
bias temperature instabilities in hole channel metal-oxide--semiconductor field effect transistors with
ultrathin gate oxide layers”, Journal of Applied Physics, 2004, Vol. 95, p. 2786-2791.
P89. M. Houssa, S. De Gendt, J.L. Autran, G. Groeseneken, M. M. Heyns, “Role of hydrogen on negative bias
temperature instability in HfO2-based hole channel field-effect transistors”, Applied Physics Letters,
2004, Vol. 85, p. 2101-2103.
P90. J.L. Autran, D. Munteanu, O. Tintori, M. Aubert, E. Decarre, “An Analytical Subthreshold Current Model
for Ballistic Quantum-Wire MOS Transistors”, Molecular Simulation, 2005, Vol. 31, n°2-3, p. 179-183.
P91. M. Bescond, J.L. Autran, N. Cavassilas, D. Munteanu, M. Lannoo, "Treatment of point defects in
nanowire MOSFETs using the Nonequilibrium Green’s Function Formalism", Journal of Computational
Electronics, 2005, Vol. 3, p. 393-396.
P92. J.L. Autran, E. Decarre, D. Munteanu, M. Bescond, M. Houssa, "A simulation analysis of FIBL in
decananometer Double-Gate MOSFETs with high-£e gate dielectrics", Journal of Non-Crystalline Solids,
2005, Vol. 351,p. 1897-1901.
P93. M. Houssa, B. De Jaeger, A. Delabie, S. Van Elshocht, V.V. Afanas’ev, J.L. Autran, A. Stesmans, M.
Meuris, M.M. Heyns, "Electrical characteristics of Ge/GeOx/HfO2/TaN structures", Journal of Non-
Crystalline Solids, 2005, Vol. 351, p. 1902-1905.
P94. D. Munteanu, J.L. Autran, S. Harrison, "Quantum short-channel compact model for the threshold voltage
in double-gate MOSFETs with high-£e gate dielectrics", Journal of Non-Crystalline Solids, 2005, Vol.
351, p. 1911-1918.
P95. K. Castellani-Coulié, D. Munteanu, V. Ferlet-Cavrois, J.L. Autran, "Simulation Analysis of the Bipolar
Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations", IEEE Transactions on
Nuclear Science, 2005, Vol. NS-52, p. 1474-1479.
P96. N. Cavassilas, M. Bescond, J.L. Autran, "Improvement of current-control induced by oxide notch in very
short fieldeffect transistor", Applied Physics Letters, 2005, Vol. 87, p. 73509-73512.
P97. D. Munteanu, J.L. Autran, S. Harrison, K. Nehari, O. Tintori, T. Skotnicki, "Compact model of the
quantum short-channel threshold voltage in symmetric Double-Gate MOSFET", Molecular Simulation,
2005, Vol. 31, p. 831-837.
P98. J.L. Autran, K. Nehari, D. Munteanu, "Compact modeling of the threshold voltage in silicon nanowire
MOSFET including 2D-quantum confinement effects", Molecular Simulation, 2005, Vol. 31, p. 839-843.
P99. J.L. Autran, D. Munteanu, M. Houssa, K. Castellani-Coulié, A. Said, "Performance Degradation Induced
by Fringing Field-Induced Barrier Lowering and Parasitic Charge in Double-Gate Metal-Oxide-
Semiconductor Field-Effect Transistors with High-£e Dielectrics", Japanese Journal of Applied Physics,
2005, p. 8362-8366.
P100. K. Castellani-Coulié, D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, "Simulation
Analysis of the Bipolar Amplification Induced by Heavy-Ion Irradiation in Double-Gate MOSFETs",
IEEE Transactions on Nuclear Science, 2005, Vol. NS-53, p. 2137-2143.
P101. S. Bécu, S. Cremer, J.L. Autran, "Microscopic model for dielectric constant in metal-insulator-metal
capacitors with high-permittivity metallic oxides", Applied Physics Letters, 2006, Vol. 88, p. 052902-
052905.
P102. K. Castellani-Coulié, D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, "Investigation of
30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study", IEEE Transactions
on Nuclear Science, 2006, Vol. 53, no. 4, pp. 1950-1958.
P103. D. Munteanu, J.L. Autran, X. Loussier, S. Harrison, R. Cerutti, T. Skotnicki, "Quantum Short-Channel
Compact Modeling of Drain-Current in Double-Gate MOSFET", Solid State Electronics, 2006, Vol. 50,
no. 4, p. 680-686.
P104. K. Nehari, N. Cavassilas, J.L. Autran, M. Bescond, D. Munteanu, M. Lannoo, "Influence of Band-
Structure on Electron Ballistic Transport in Silicon Nanowire MOSFET’s: an Atomistic Study", Solid
State Electronics, 2006, Vol. 50, no. 4, p. 716-721.
P105. S. Bécu, S. Crémer, J.L. Autran, "Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic
polarization model", Microelectronic Engineering, 2006, Vol. 83, no. 11-12, p. 2422-2426.
P106. D. Munteanu, V. Ferlet-Cavrois, J.L. Autran, P. Paillet, J. Baggio, O. Faynot, C. Jahan, and L. Tosti,
"Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to
Heavy Ion Irradiation", IEEE Transactions on Nuclear Science, 2006, Vol. 53, no. 6, p. 3363-3371.
P107. K. Castellani, D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, "Analysis of 45-nm Multi-Gate
Transistors Behavior under Heavy Ion Irradiation by 3-D Device Simulation", IEEE Transactions on
Nuclear Science, 2006, Vol. 53, no. 6, p. 3265-3270.
P108. X. Loussier, D. Munteanu, J.L. Autran, "Impact of high-permittivity dielectrics on speed performances
and power consumption in Double-Gate based CMOS circuits", Journal of Non-Crystalline Solids, 2007,
Vol. 353, p. 639-644.
P109. D. Munteanu, J.L. Autran, X. Loussier, S. Harrison, R. Cerutti, "Compact modeling of symmetrical
double-gate MOSFETs including carrier confinement and short-channel effects", Molecular Simulation,
2007, Vol. 33, n°7, p. 605-611.
P110. J.L. Autran, P. Roche, J. Borel, C. Sudre, K. Castellani-Coulié, D. Munteanu, T. Parrassin, G. Gasiot, J.P.
Schoellkopf, "Altitude SEE Test European Platform (ASTEP) and First Results in CMOS 130nm
SRAM", IEEE Transactions on Nuclear Science, 2007, Vol. 54, n°4, p. 1002-1009.
P111. D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, K. Castellani, "3D Quantum Numerical
Simulation of Single-Event Transients in Multiple-Gate Nanowire MOSFETs", IEEE Transactions on
Nuclear Science, 2007, Vol. 54, n°4, p. 994-1001.
P112. J.L. Autran, D. Munteanu, "Au-delà du transistor MOS sur silicium massif", Revue de l'Electricité et de
l'Electronique, 2007, N°4, p. 25-37.
P113. V. Barral, T. Poiroux, M. Vinet, J. Widiez, B. Previtali, P. Grosgeorges, G. Le Carval, S. Barraud, J.L.
Autran, D. Munteanu, S. Deleonibus, "Experimental determination of the channel backscattering
coefficient on 10 to 70nm-metal-gate Double-Gate transistors", Solid-State Electronics, 2007, Vol. 51, p.
537-542.
P114. K. Nehari, N. Cavassilas, F. Michelini, M. Bescond, J.L. Autran, M. Lannoo, "Full-band study of current
across silicon nanowire transistors", Applied Physics Letters, 2007, Vol. 90, p. 132112-1/3.
P115. S. Serdouk, R. Hayn, J.L. Autran, "Theory of spin-dependent tunneling current in ferromagnetic metal–
oxide–silicon structures", Journal of Applied Physics, 2007, Vol. 102, p. 113707-1/5.
Autran J.L. and Munteanu D..- Simulation of electron transport in nanoscale independent-gate double-gate devices using a full 2D Green’s function approach..- Journal of Computational and Theoretical Nanoscience,.- vol. 5, p. 1120–1127, 2008
Giot D., Roche P., Gasiot G., Autran J.L, Harboe-Sørensen R..- Heavy ion testing and 3D simulations of multiple cell upset in 65nm standard SRAMs..- IEEE Transactions on Nuclear Science,.- vol. 55, n° 4, p. 2048-2054, 2008
Loussier X., Munteanu D., Autran J.L., Tintori O..- Impact of geometrical and electrical parameters on speed performances in ultimate double-gate metal-oxide-semiconductor field-effect transistor..- Japanese Journal of Applied Physics,.- vol. 47, n° 5, p. 3390-3395, 2008
Martinie S., Le Carval G., Munteanu D., Soliveres S., Autran J.L..- Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits..- IEEE Transactions on Electron Devices,.- vol. 55, no. 9, p. 2443-2453, 2008
Moreau M., Munteanu D. and Autran J.L..- Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal-oxide-semiconductor field-effect transistors..- Japanese Journal of Applied Physics,.- vol. 47, no. 9, p. 7013-7018, 2008
Munteanu D. and Autran J.L..- Modeling and simulation of single-event effects in digital devices and Ics..- IEEE Transactions on Nuclear Science,.- vol. 55, no. 4, p. 1854-1878, 2008
Nehari, K., Lannoo, M., Michelini, F., Cavassilas, N., Bescond, M., Autran, J. L..- Improved effective mass theory for silicon nanostructures..- Applied Physics Letters,.- vol. 93, no 9, p. 092103, 2008
Barral V., Poiroux T., Barraud S., Bonno O., Andrieu F., Faynot O., Munteanu D., Autran J.L. and Deleonibus S..- Evidences on the physical origin of the unexpected transport degradation in ultimate n-FDSOI devices..- IEEE Transactions on Nanotechnology, in press, 2009
Barral V., Poiroux T., Bournel A., Munteanu D., Autran J.L. and Deleonibus S..- Experimental investigation on the quasi-ballistic transport: part I- Determination of a new backscattering coefficient extraction methodology..- IEEE Transactions on Electron Devices, in press, 2009
Barral V., Poiroux T., Munteanu D., Autran J.L. and Deleonibus S..- Experimental investigation on the quasi-ballistic transport: Part II- Backscattering coefficient extraction and link with the mobility..- IEEE Transactions on Electron Devices, in press, 2009
Martinie S., Le Carval G., Munteanu D., Autran J.L..- New unified analytical model of backscattering coefficient from low to high field conditions in quasi-ballistic transport..- IEEE Electron Device Letters, in press, 2009
Pelletier B., Juhel M., Trouiller C., Beucher D., Autran J.L., Morin P..- Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties..- Materials Science and Engineering B, in press, 2009
