Directrice de recherche CNRS
Présidente du comité thématique « Nanomatériaux » PNANO, ANR
Membre du Conseil Scientifique de l’IM2NP
Experte du ministère italien de la recherche (CINECA), de
la Commission Européenne
, du ministère de
la recherche Norvégien
, de l’ANR PNANO
Membre du Steering Committee MRSEC, Uni.
Virginia
, ITIMS Vietnam
Membre de la commission de spécialiste 63° Uni. Paul Cézanne
Domaine d’activité :
Nanostructures Si(Ge) ; Auto-assemblage ; Nanostructuration ; Dopage type n (Sb) et type p (B) ; Instabilités de croissance et d’érosion ionique ; Relaxation des contraintes.
Publications récentes (articles dans revues internationales) :
Berbezier I., Ronda A., Portavoce A..- SiGe nanostructures : new insights into growth processes..- Journal of Physics - Condensed Matter,.- vol. 14, n° 35, p. 8283-8331, 2002
Portavoce A., Bassani F., Ronda A., Berbezier I..- Auger spectroscopy thermodesorption of Sb on SiGe layers grown on Si(100) substrates..- Surface Science,.- vol. 519, p. 185-, 2002
Portavoce A., Ronda A., Berbezier I..- Sb surfactant mediated growth of Ge nanostructures..- Material Science and Engineering B,.- vol. 89, p. 205-, 2002
Berbezier I., A. Ronda, A. Portavoce, Motta N..- Ge dots self-assembling : surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities..- Applied Physics Letters,.- vol. 83, p. 4833-, 2003
Berbezier I., Ronda A., Volpi F., Portavoce A..- Morphological evolution of SiGe layers..- Surface Science,.- vol. 531, p. 231-, 2003
Lim Y.S. , F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, Berbezier I..- The effect of Sb on the oxidation of Ge quantum dots..- Material Science and Engineering B,.- vol. 101, p. 190-, 2003
Portavoce A., Berbezier I., Ronda A..- Effects of Sb on Si/Si and Ge/Si growth process..- Materials Science and Engineering B,.- vol. 101, n° 1-3, p. 181-185, 2003
Ronda A., I. Berbezier, A. Pascale, A. Portavoce, Volpi F..- Experimental insights into Si and SiGe growth instabilities : influence of kinetic growth parameters and substrate orientation..- Material Science and Engineering B,.- vol. 101, p. 95-, 2003
Volpi F., A.R. Peaker, I.D. Hawkins, A. Portavoce, A. Ronda, Berbezier I..- Hole trapping in self-assembled SiGe quantum dots..- Material Science and Engineering B,.- vol. 101, p. 338, 2003
Kanoun M., M. Lemiti, G. Bremond, A. Souifi, F. Bassani, Berbezier I..- Electrical study of MOS structure with Ge embedded in SiO2 as floating gate for non-volatile memory..- Superlattices and Microstructures,.- vol. 36, n° 1-3, p. 143-148, 2004
Karmous A., A. Cuenat, A. Ronda, I. Berbezier , S. Atha, R. Hull..- Ge dot organization on Si substrates patterned by focused ion beam..- Applied Physics Letters,.- vol. 85, p. 6401-6403, 2004
Portavoce A., Berbezier I., Gas P., Ronda A..- Sb-surface segregation during epitaxial growth of SiGe heterostructures : the effects of Ge composition and biaxial stress..- Physical Review B,.- vol. 69, n° 15, p. 155414, 2004
Portavoce A., Berbezier I., Ronda A..- Sb-surfactant-mediated growth of Si and Ge nanostructures..- Physical Review B,.- vol. 69, p. 155416, 2004
Portavoce A., Gas P., Berbezier I., Ronda A, Christensen J.S., Yu. Kuznztsov A., Svensson B.G..- Sb lattice diffusion in Si l-xGex /Si(100) heterostructures : chemical and stress effects..- Physical Review B,.- vol. 69, p. 155415, 2004
Portavoce A., Gas P., Berbezier I., Ronda A., Christensen J.S., Svensson B..- Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy : Effect of Ge concentration and biaxial stress..- Journal of Applied Physics,.- vol. 96, n°6, p. 3158-3163, 2004
Ronda A., Berbezier I..- Self-patterned Si surfaces as templates for Ge islands ordering..- Physica E : Low-dimensional Systems and Nanostructures,.- vol. 23, n° 3-4, p. 370-376, 2004
Rowell N.L, D.C. Houghton, I. Berbezier, A. Ronda, D. Webb, Ward M..- Dopant layer abruptness in strained Si1-xGex heterostructures..- Journal of Vacuum Science and Technology A,.- vol. 22, n° 3, p. 939-942, 2004
Volpi F., A R Peaker, I Berbezier and Ronda A..- Electrically active defects induced by sputtering deposition on silicon : the role of hydrogen..- Journal of Applied Physics,.- vol. 95, p. 4752-, 2004
Berbezier I., A. Karmous, A. Ronda, T. Stoica, L. Vescan, G. Remco, A. Olzierski, E. Tsoi, A. Nassiopoulou..- Two-dimensional arrays of ordered, highly dense and ultra-small Ge nanocrystals on thin SiO2 layers..- Journal of Physics : Conference Series,.- vol. 10, p. 73-76, 2005
Berbezier I., Descoins M., Ismail B., Maaref H., Ronda A..- Influence of Si(001) substrate misorientation on morphological and optical properties of Ge quantum dots..- Journal of Applied Physics,.- vol. 98, n° 6, p. 063517, 2005
Ismail B., M. Descoins, A. Ronda, F. Bassani, G. Bremond, H. Maaref, Berbezier I..- Effect of self-patterned Si1-xGex template layer on the structural and optical properties of Ge dots..- Journal of Vacuum Science and Technology B,.- vol. 23, n° 1, p. 242-246, 2005
Ayoub J.-P., Favre L., Ronda A., Berbezier I., De Padova P., Olivier B..- Structural and magnetic properties of GeMn diluted magnetic semiconductor..- Materials Science in Semiconductor Processing,.- vol. 9, n° 4-5 , p. 832-835, 2006
Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M..- Formation and ordering of Ge nanodots on SiO2..- Materials Science in Semiconductor Processing,.- vol. 9, p. 812, 2006
Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M..- Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films..- Applied Physics Letters,.- vol. 89, p. 063122, 2006
Karmous A. Berbezier I., Ronda A..- Formation and ordering of Ge nanocrystals on SiO2..- Physical Review B,.- vol. 73, n° 7, p. 075323, 2006
Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I..- Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys..- Materials Science in Semiconductor Processing,.- vol. 9, p. 836, 2006
Pascale A., Berbezier I., Ronda A., Videcoq A., Pimpinelli A..- Kinetic modeling of Si growth instabilities..- Applied Physics Letters,.- vol. 89, p. 104108, 2006
Portavoce A., Berbezier I., Ronda A., Gas P., Christensen J.S., Kuznetsov A.Yu., Svensson B.G..- Dopant diffusion in Si1-xGex thin films : Effect of epitaxial stress..- Defect and Diffusion Forum,.- vol. 249, p. 135, 2006
Ayoub J.-P., Favre L., Berbezier I., Ronda A., Morresi L., Pinto N..- Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films..- Applied Physics Letters,.- vol. 91 , n° 14, p. 141920, 2007
Berbezier I. , Ronda A..- Self-assembling of Ge dots on nanopatterns : experimental investigation of their formation, evolution and control..- Physical Review B,.- vol. 75, p. 195407, 2007
De Padova P., Ayoub J.P., Berbezier I., Mariot JM., Taleb-Ibrahimi A., Richter M.C., Heckmann O., Testa A.M., Fiorani D., Olivieri B., Picozzi S., Hricovini K..- MnxGe1-x thin layers studied by TEM, X-ray absorption spectroscopy and SQUID magnetometry..- Surface Science,.- vol. 601, p. 2628, 2007
De Padova P., Favre L., Berbezier I., Olivieri B., Generosi A., Paci B., Rossi Albertini V., Perfetti P., Quaresima C., Mariot J.-M., Taleb-Ibrahimi A., Richter M.C., Heckmann O., D’Orazio F., Lucari F. and Hricovini K..- Structural and magnetic properties of Mn5Ge3 nanoclusters dispersed in MnxGe1−x/Ge(0 0 1)2 × 1 diluted magnetic semiconductors..- Surface Science,.- vol. 601, n° 18 , p. 4370 – 4374, 2007
Gacem K., El Hdiy A., Troyon M., Berbezier I., Szkutnik P.D., Karmous A., Ronda A..- Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide..- Journal of Applied Physics,.- vol. 102, p. 093704, 2007
Karmous A., Berbezier I. , Ronda A., Hull R., Graham J..- Ordering of Ge nanocrystals using FIB nanolithography..- Surface Science,.- vol. 601, p. 2769, 2007
Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I., D'Orazio F., Lucari F..- Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C..- Surface Science,.- vol. 601, p. 2632, 2007
Nassiopoulou A.G., Olzierski A., Tsoi E., Berbezier I., Karmous A..- Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots..- Journal of Nanosciences and Nanotechnology,.- vol. 7, p. 316, 2007
Scarselli M., Masala S., Castrucci P., De Crescenzi M., Gatto E., Venanzi M., Karmous A., Szkutnik P.D., Ronda A., Berbezier I..- Optoelectronic properties in quantum-confined germanium dots..- Applied Physics Letters,.- vol. 91, p. 141117, 2007
Szkutnik P.D. , Sgarlata A., Motta N., Placidi E., Berbezier I., Balzarotti A..- Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces..- Surface Science,.- vol. 601, p. 2778, 2007
Szkutnik P.D., Sgarlata A., Balzarotti A., Motta N., Ronda A., Berbezier I..- Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along [110]..- Physical Review B,.- vol. 75, p. 033305, 2007
De Padova P., Ayoub JP, Berbezier I., Perfetti P., Quarissima C., Testa A.M., Fiorani D., Olivieri B., Mariot J.M., Taleb-Ibrahimi A., Richter M.C., Heckmann O., Hricovin K..- MnxGe1-x thin layers studied by TEM, X-ray absorption spectroscopy and SQUID magnetometry..- Physical Review B,.- vol. 77, p. 045203, 2008
El Hdiy A., Gacem K., Troyon M., Ronda A., Bassani F., Berbezier I..- Germanium nanocrystal density and size effects on carrier storage and emission..- Journal of Applied Physics,.- vol. 104, p. 063716, 2008
Pascale A., Berbezier I., Ronda A., Kelires P..- Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001)..- Physical Review B,.- vol. 77, p. 075311, 2008
Szkutnik P.D., Karmous A., Bassani F., Ronda A., Berbezier I., Gacem K., El Hdiy A., Troyon M..- Ge nanocrystals formation on SiO2 by dewetting : application to memory..- The European Physical Journal : Applied Physics,.- vol. 41 , p.103-106, 2008
De Crescenzi M., Scarselli M., Sgarlata A., Masala S., Castrucci P., Gatto E., Venanzi M., Karmous A., Ronda A., Szkutnik P.D., Berbezier I..- Photocurrent generation from Ge nanodots in the near UV and visible region..- Superlattices and Microstructures, acceptée, 2009.-
Rowell N.L., Lockwood D.J., Karmous A., Szkutnik P.D., Berbezier I., Ronda A..- Photoluminescence of Ge nanocrystals self-assembled on SiO2..- Superlattices and Microstructures, acceptée, 2009
Tay L.-L., Rowell N.L., Ayoub J.-P., Berbezier I., Morresi L., Pinto N..- Raman measurements of Ge1−xMnx epilayers..- Superlattices and Microstructures, acceptée, 2009
Chapitre de livre et articles invités (depuis 2002)
SiGe nanostructures: new insights into growth processes
I. Berbezier,
A. Ronda
, A. Portavoce, J. Phys. Condens. Matter., 14 (2002) 8283
Ge quantum dot self-alignment on vicinal substrates,
I. Berbezier,
A. Ronda
,
A. Karmous
, Chap. 6, Ed. O. Schmidt, Nanoscience and Technol., Springer-Verlag Berlin Heidelberg (2007)
Ge nanodroplets self-assembling on Focused Ion Beam patterned substrates,
I. Berbezier,
A. Karmous
,
A. Ronda
, Chap. 15, Ed. O. Schmidt, Nanoscience and Technol., Springer-Verlag Berlin Heidelberg (2007)
Si/SiGe Heterostructures for advanced microelectronic devices
I. Berbezier,
A. Ronda
, Phase transitions (2008) In Press
Conférences invitées (depuis 2002)
SIGE NANOSTRUCTURES : GROWTH AND SELF-ASSEMBLING, APS
Indianapolis
, Mars 2002
MORPHOLOGICAL EVOLUTION OF SI AND SIGE NANOSTRUCTURES, IUVSTA-Workshop, Leoben
Austria
, Juin 2002
MECHANISMS AND APPLICATIONS OF DOPANTS REDISTRIBUTION DURING THE GROWTH OF SIGE/SI NANOSTRUCTURES, CIMTEC Florence, Juillet 2002
GROWTH AND SELF-ASSEMBLING OF SIGEWorkshop «
Crystal
growth : from basic to applied », Académie Nationale des Sciences,
Rome
, Octobre 2002
PROBING THE DOPANT INTERFACE IN STRAINED SI1-XGEX HETEROSTRUCTURES, ICSI3, Third Int’l Conference on SiGe(C) Epitaxy and Heterostructures, Santa Fe, USA, Mars 2003
MORPHOLOGICAL AND STRUCTURAL CHARACTERIZATION OF GE, QDICFPAM 7, Budapest, Roumanie, Juin 2003
GE DOTS SELF-ASSEMBLING: THE EFFECT OF NANOPATTERNS, NN2003 Workshop Nanostructures and Nanotubes,
Rome
, Sept. 2003
EXPERIMENTAL TECHNIQUES ON QUANTUM DOTS, NN2003 School, Sept. 2003
SELF-PATTERNED SI SURFACES AS TEMPLATES FOR GE
ISLANDS
ORDERING, ESPS-NIS, Stuttgart, Allemagne, Oct. 2003
REDISTRIBUTION OF KEY ELEMENTS IN SIGE NANOSTRUCTURES, DIMAT, Cracovie, Pologne, Juil. 2004
FORUM FIB : FABRICATION, ORGANISATION AND USE OF NC MEMORIES FABRICATED BY FOCUSED ION BEAM, MNN, Microelectronics, Nanotechnology and Nanosystems, Athènes, Grèce, Nov. 2004
TWO-DIMENSIONAL ARRAYS OF ORDERED, HIGHLY DENSE AND ULTRA SMALL GE NANOCRYSTALS ON THIN SIO2 LAYERS, Workshop on Silicon Optoelectronics,
Grasmere
,
U.K.
, Avril 2006
FORMATION AND ORDERING OF GE NANODOTS ON SIO2, EMRS 2006, Symposium T, Nice, Mai 2006
SI AND SIGE NANOSTRUCTURES STRESS RELAXATION, SINANO 2006, Aix en Provence, Juillet 2006
Auto-assemblage de nanocristaux de Ge sur substrat silicium et application aux mémoires, JMC 10,
Toulouse
, Août 2006
SI AND SIGE GROWTH INSTABILITIESNANOPHEN, Bulgarie, Sept. 2006AUTO-ORGANISATION DE NANOCRISTAUX DE GE SUR DES SUBSTRATS NANOSTRUCTURES PAR FAISCEAU D’IONS FOCALISE, JSI, Paris, Janvier 2007
AUTO-ORGANISATION DE BOITES QUANTIQUES SUR SUBSTRAT SILICIUM NANOSTRUCTURE, Journées du Non linéaire, Paris, 2008
SI AND GE NANOCRYSTAL EMBEDDED IN SILICON DIOXIDE: FORMATION AND ELECTRICAL PROPERTIES, EMRS,
Strasbourg
, Mai 2008
SELF-ASSEMBLY OF GE NANOCRYSTALS ON NANOSTRUCTURED SUBSTRATES, ICPAM 8, Iasi, Roumanie, Juin 2008
NANOSTRUCTURES SiGe, NANOSTEP, Cargèse, Juin 2008
