page personnelle

Maître de conférences, Université d'Aix-Marseille

Equipe "Microcapteurs"

Domaine d'activité : microcapteurs, microélectronique, interfaces, nanofils semi-conducteurs, caractérisations électriques et structurales

Publications récentes :

Articles et communications publiés dans revues à comité de lecture

· E. Efthymiou, S. Bernardini, J.F. Zhang, S.N. Volkos, B. Hamilton and A.R. Peaker, “Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF Hydrogen and Deuterium plasma treatment” Thin Solid Films, In Press, Accepted Manuscript, Available online 15 August 2008

http://dx.doi.org/10.1016/j.tsf.2008.08.051

· S. Bernardini, M. MacKenzie, O. Buiu, P. Bailey, T.C.Q. Noakes, W.M. Davey, B. Hamilton and S. Hall, Chemical and optical profiling of ultra thin high-k dielectrics on silicon, Thin Solid Films, In Press, Accepted Manuscript, Available online 14 August 2008

http://dx.doi.org/10.1016/j.tsf.2008.08.048

· L. Dobaczewski, S. Bernardini, P. Kruszewski, P.K. Hurley, V. P. Markevich., I.D. Hawkins, A.R. Peaker, “Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO₂ interfaces investigated by Laplace deep level transient spectroscopy”, Applied Physics Letters, Vol. 92, Issue 24, p. 242104-3, 2008

http://link.aip.org/link/?APL/92/242104/1

· E. Efthymiou, S. Bernardini, S. N. Volkos, B. Hamilton, J. F. Zhang, H. J.Uppal, A. R. Peaker, “Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks”, Microelectronic Engineering, Vol. 84, Issue 9-10,
p. 2290-2293, 2007, ISSN: 0167-9317

http://dx.doi.org/10.1016/j.mee.2007.04.060

· S. N. Volkos, S. Bernardini, N. Rigopoulos, E. S. Efthymiou, I. D. Hawkins, B. Hamilton, L. Dobaczewski, S. Hall, P. K. Hurley, A. Delabie, A. R. Peaker, “Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate”, Microelectronic Engineering, Vol. 84, Issue 9-10, p. 2374-2377, 2007 - ISSN: 0167-9317

http://dx.doi.org/10.1016/j.mee.2007.04.047

· S. Bernardini, M. Ishii, E. Whittaker, B. Hamilton, J. W. Freeland, N. R. J. Poolton, S. De Gendt, “Nanoscale imaging and X-ray spectroscopy of electrically active defects in ultra thin dielectrics on silicon”, Microelectronic Engineering, Vol. 84, Issue 9-10, p. 2286-2289, 2007 - ISSN: 0167-9317

http://dx.doi.org/10.1016/j.mee.2007.04.054

· S. N.Volkos, E. S.Efthymiou, S. Bernardini, I. D. Hawkins, A. R. Peaker, and G.Petkos, “The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors”, Journal of Applied Physics, Vol. 100, Issue 12, ISSN: 0021-8979, 2006

http://link.aip.org/link/?JAPIAU/100/124103/1

· L. Perniola, S. Bernardini,; G. Iannaconne, P. Masson, B. De Salvo, G. Ghibaudo, and C. Gerardi, , “Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories”, IEEE Transactions on Nanotechnology, Vol. 4, Issue 3, P. 360-368, ISSN 1536-125X, 2005

http://dx.doi.org/10.1109/TNANO.2005.847033

· S.Bernardini, P. Masson, M. Houssa and F. Lalande, “Origin and repartition of the oxide fixed charges generated by electrical stress in memory tunnel oxide”, Applied Physic Letters, Vol. 84, n° 21, p. 4251-4253, 2004

http://link.aip.org/link/?APPLAB/84/4251/1

· S.Bernardini, P. Masson and M. Houssa, “Effect of fixed dielectric charges on tunneling transparency in MIM and MIS structures”, Microelectronic Engineering, Vol. 72, n° 1-4, p. 90-95, 2004

http://dx.doi.org/10.1016/j.mee.2003.12.022

· F. Gilibert, D. Rideau, S. Bernardini, P. Scheer, M. Minondo, D. Roy, G. Gouget and A. Juge, “DC and AC MOS transistor modelling in presence of high gate leakage and experimental validation”, Solid-State Electronics,
Vol. 48, n° 4, p. 597-608, 2004

http://dx.doi.org/10.1016/j.sse.2003.09.020

· R. Laffont, P. Masson, S. Bernardini, R. Bouchakour, and J.M. Mirabel, “A new floating compact model applied to Flash memory cell”, Journal of Non-Crystalline Solids, Vol. 322, 1, p. 250-255, 2003

http://dx.doi.org/10.1016/S0022-3093(03)00210-2

· Souifi, P. Brounkov, S. Bernardini, C. Busseret, L. Militaru, G. Guillot and T. Baron, “Study of trap centres in silicon nanocrystal memories”, Materials Science and Engineering B, Vol. B102, Issue 1-3, p. 99-107, 2003.

http://dx.doi.org/10.1016/S0921-5107(03)00013-8

Thèse
S. Bernardini - Modélisation des structures Metal-Oxyde-Semiconducteur (MOS) : Applications aux dispositifs mémoires.- Thèse de Docteur de l’Université, Université d'Aix-Marseille, 8 octobre 2004 (texte intégral en pdf)

Communications publiées dans des comptes-rendus édités (Proceedings)

· S. Bernardini, O. Buiu, M. MacKenzie, P. Bailey, T.C.Q. Noakes, W.M. Davey, B. Hamilton, S. Hall, “Chemical and optical profiling of ultra thin kigh k dielectrics on silicon”, 5th International Conference on Silicon Epitaxy and Heterostructures, Marseille 2007

· E. Efthymiou, S. Bernardini, B. Hamilton, J.F. Zhang, S.N. Volkos and A.R. Peaker, “Degradation of ultra thin SiO2 and HfSixOy/SiO2 gate stacks by remote hydrogen and deuterium plasma treatment” 5th International Conference on Silicon Epitaxy and Heterostructures, Marseille 2007

· S. Bernardini, “New Experimental Methods to solve the problem of failing MOSTransistors”, Britain.s Younger Engineers 2005, Annual Reception and Competition at the House of Commons, 2005

· L. Perniola, S. Bernardini, G. Iannaccone, B. De Salvo, G. Ghibaudo, P. Masson and C. Gerardi, “Electrostatic effect of localised charge in dual bit memory cells with discrete traps”, Proceedings of the 34th European Solid-State Device Research Conference, (ESSDERC), Leuven, Belgium, p. 249-252, 2004

· S. Bernardini, JM. Portal, P. Masson, “A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology”, Proceeding of the IEEE Conference Design, Automatisation and Test in Europe (DATE), Paris, vol. 2, ISBN: 0-7695-2085-5, p. 1404-1406, (2004).

http://doi.ieeecomputersociety.org/10.1109/DATE.2004.1269108

· S. Bernardini, P. Masson, JM. Portal; J.M. Gallière, M. Renovell, “Impact of Gate Oxide Reduction Failure on Analog Application: Example of the Current Mirror”, Proceeding IEEE 5th Latin-American Test Workshop (LATW’04), Cartagena, Colombia, ISBN: 958-33-5900-9, p. 12-17, 2004.

· F. Gilibert, D. Rideau, S. Bernardini, P. Scheer, M. Minondo, D. Roy, G. Gouget and A. Juge, “Channel Debiasing and Gate Current Modelling in Advanced CMOS Devices”, Proceedings of 4th European Workshop on Ultimate Integration of Silicon (ULIS 2003), Udine, Italy, p. 61-64, 2003

· S. Bernardini, R. Laffont, P. Masson, G. Ghibaudo, S. Lombardo, B. De Salvo, C. Gerardi, “A predictive nano-crystal Flash memory simulator”, Proceedings of the 4th European Workshop on Ultimate Integration of Silicon (ULIS 2003), Udine Italy, p. 143-146, 2003.

· S. Bernardini, P. Masson, M. Houssa, “Effect of fixed dielectric charges on tunneling transparency in MOM and MIS structures, Proceedings of the 13^th Biennial Conference Insulating Film on Silicon (INFOS), Barcelona, Spain, June 2003.

· S. Bernardini, P. Masson, M. Houssa, F. Lalande, “Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements”, Proceedings of the 33rd European Solid-State Device Research Conference (ESSDERC'2003), Estoril, Portugal, p. 589-592, 2003

· R. Laffont, P. Masson, R. Bouchakour, S. Bernardini, J.M. Mirabel, “A new Flash physical model based on Pao and Sah approach”, 4^th Franco-Italian Symposium on SiO2 and Advanced Dielectrics, Trento (Italy), 2002

· A. Souifi, P. Brounkov, S. Bernardini, C. Busseret, L. Militaru, P. Masson, T. Baron and G. Guillot, “Study of trap centres in silicon nanocrystal memories”, Proceeding of the E-MRS Conference, Advanced Characterization of Semiconductor Materials and Devices, Strasbourg, Symposium E IV.2, 2002.

	Sandrine Bernardini
	IM2NP Campus de Saint Jérôme Case 142 Avenue Escadrille Normandie Niemen 13397 Marseille Cedex 20 France
	téléphone : +33 (0) 4 91 28 91 55
	mail : sandrine.bernardini@im2np.fr