 | Marc Bescond |
| IM2NP Bâtiment IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France | |
| téléphone : + 33 (0)4 96 13 97 31 | |
| mail : marc.bescond@im2np.fr |
| | Marc Bescond |
| IM2NP Bâtiment IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France | |
| téléphone : + 33 (0)4 96 13 97 31 | |
| mail : marc.bescond@im2np.fr |
Chargé de recherche CNRS
Publications
M. Bescond, M. Lannoo, L. Raymond and F. Michelini, “Single donor induced negative differential resistance in silicon n-type nanowire Metal-Oxide-Semiconductor transistors,” J. Appl. Phys., 107, 093703 (2010).
N. Cavassilas, N. Pons, F. Michelini and M. Bescond, “Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation,” Appl. Phys. Lett., 96, 102102 (2010)
N. Cavassilas, S. d’Ambrosio and M. Bescond, “Quantum simulations of hole transport in Si, Ge, SiGe and GaAs double-gate pMOSFETs: orientation and strain effects,” International Electron Device Meeting (IEDM) Tech. Digest, Baltimore (USA), p. 67, December 2009.
C. Li, M. Bescond and M. Lannoo, “A GW investigation of interface induced correlation effects on transport properties in realistic nanoscale structures,” Phys. Rev. B, 80, 195318 (2009).
M. Bescond, C. Li, M. Lannoo, “Nanowire transistor modeling: influence of ionized impurity and correlation effects,” J. Comp. Electron. 8, 382 (2009), Invited paper.
N. Pons, N. Cavassilas, F. Michelini, L. Raymond and M. Bescond, “New shaped nanowire MOSFETs with enhanced current characteristics based on three-dimensional modeling,” J. Appl. Phys., 106, 053711 (2009).
C. Buran, M. G. Pala, M. Bescond, M. Dubois, and M. Mouis, “Three dimensional real space simulation of surface roughness in silicon nanowire FETs,” IEEE Trans. Electron Dev., 56, 2186 (2009).
M. Bescond, M. Lannoo, F. Michelini, L. Raymond, M.G. Pala, “3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity,” Microelectron. J., 40, 756 (2009).
A. Martinez, J. R. Barker, A. Svizhenko, A. Anantram, M. Bescond, and A. Asenov, “Ballistic quantum simulators for studying variability in nanotransistors,” J. Comput. Theor. Nanosci., 5, 2289-2310 (2008). Review paper
K. Nehari, M. Lannoo, F. Michelini, N. Cavassilas, M. Bescond, and J. L. Autran, “Improved effective mass theory for silicon nanostructures,” Appl. Phys. Lett., 93, 092103 (2008).
A. Martinez, J.R. Barker, M. Bescond, A.R. Brown and A. Asenov, “Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain,” J. Phys.-Conference Series, 109, 012026 (2008).
K. Rogdakis, S.-Y. Lee, M. Bescond, S.-K. Lee, E. Bano and K. Zekentes, “3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach,” IEEE Trans. Electron Dev. 55, 1970 (2008).
C. Buran, M. G. Pala, M. Bescond, M. Mouis, “Full-three dimensional quantum simulation approach for surface-roughness-limited mobility in SNWT,” J. Comp. Electron. 7, 328 (2008).
A. Martinez, M. Bescond, A.R. Brouwn, J.R. Barker, A. Asenov, “A full 3D non-equilibrium green functions study of a stray charge in a nanowire MOS transistor,” J. Comp. Electron. 7, 359 (2008).
K. Rogdakis, M. Bescond, E. Bano and K. Zekentes, “Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes,” Nanotechnology 18, 475715 (2007).
A. Martinez, M. Bescond, J. R. Barker, A. Svizhenkov, A. Anantram, C. Millar, A. Asenov, Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET.- IEEE Trans. Electron Dev., vol.54, p.2213, (2007)
Bescond M, Cavassilas N, Lannoo M.- Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented.- NANOTECHNOLOGY 18 (25): Art. No. 255201 JUN 27 2007
M. Bescond, N. Cavassilas, K. Nehari, and M. Lannoo, Tight-Binding.- Calculations of Ge-nanowire Bandstructures, J. Comp. Electron.,vol.6, p.341 (2007).
Nehari K, Cavassilas N, Michelini F, et al.- Full-band study of current across silicon nanowire transistors.- APPLIED PHYSICS LETTERS 90 (13): Art. No. 132112 MAR 26 2007
Nehari K, Cavassilas N, Autran JL, et al.- Influence of band structure on electron ballistic transport in silicon nanowire MOSFET's: An atomistic study.- SOLID-STATE ELECTRONICS 50 (4): 716-721 APR 2006
Cavassilas N, Bescond M, Autran JL.- Improvement of current-control induced by oxide notch in very short field-effect transistor.- APPLIED PHYSICS LETTERS 87 (7): Art. No. 073509 AUG 15 2005
Autran JL, Munteanu D, Bescond M, et al.- A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-kappa gate dielectrics.- JOURNAL OF NON-CRYSTALLINE SOLIDS 351 (21-23): 1897-1901 JUL 15 2005
Bescond M.- Modeling and simulation of quantum transport in nanoscale MOSFETs.- Thèse de Docteur de l'Université , Université de Provence , 26 novembre 2004 (texte intégral sur TEL)
Bescond M., Autran J.L., Munteanu D., Lannoo M.- Atomic-scale modeling of Double-Gate, MOSFETs using a tight-binding Green’s function formalism.- Solid-State Electronics, vol. 48, p. 567-574, 2004
M. Bescond, J.L. Autran, N. Cavassilas, D. Munteanu, and M. Lannoo.- Treatment of point defects in nanowire MOSFETs using the nonequilibrium Greenís function formalism, J. Comp. Electron. vol.3, p.393 (2004)
Bescond M., Lannoo M., Goguenheim D. and Autran J.L. - Towards a full microscopic approach to the modeling of transistors with nanometer dimensions. - Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 160-167, 2003
