Marc Bocquet
	IM2NP - Polytech' Marseille Ecole Polytechnique Universitaire de Marseille, Dpt Microélectronique et Télécommunications IMT Technopôle de Château - Gombert 13451 Marseille cedex 20
	téléphone : + 33 (0) 4 91 05 47 86 fax : +33 (0) 4 91 05 47 82
	mail : marc.bocquet@im2np.fr

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Maître de conférences, Université d'Aix-Marseille

• Equipe Mémoires

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Domaines d’activité :

Microélectronique, semi-conducteur, mémoire non-volatile, EEPROM-Flash,
ReRAM, modèle, caractérisation.

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Publications récentes :

G. Molas, M. Bocquet, et al, Investigation of hafnium-aluminate alloys
in view of integration as interpoly dielectrics of future Flash
memories, Solid-State Electronics 51 (2007), pp.1540-1546.

G. Molas, M. Bocquet, et al, Evaluation of HfAlO high-k materials for
control dielectric applications in non-volatile memories,
Microelectronic Engineering 85 (2008), pp.2393-2399.

M. Bocquet, et al , Impact of a HTO/Al2O3 bi-layer blocking oxide in
nitride-trap non-volatile memories, Solid-State Electronics 53 (2009),
pp.786-791.

Colloques

J. Buckley, M. Bocquet, et al, In-depth Investigation of Hf-based
High-k Dielectrics as Storage Layer of Charge-Trap NVMs, IEDM Tech.
Dig., 2006, pp.251-254.

M. Bocquet, et al, Intrinsic fixed charge and trapping properties of
HfAlO interpoly dielectric layers, Proc. ICMTD, 2007, pp.239-242.

G. Molas, M. Bocquet, et al, Thorough investigation of Si-nc memories
with high-k interpoly for sub-45nm node Flash NAND applications, IEDM
Tech. Dig., 2007, pp.455-4556.

M. Bocquet, et al, On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide
in Nitride-Trap Non-Volatile Memories, Proc. ESSDERC, 2008, pp.119-122.

G. Molas, M. Bocquet, et al, Reliability of charge trapping memories
with high-k control dielectrics, Proc. ISAGST, 2008.

E. Nowak, M. Bocquet, et al, New Physical Model for ultra-scaled 3D
Nitride-Trapping Non-Volatile Memories, IEDM Tech. Dig., 2008.

M. Bocquet, et al, An in-depth investigation of physical mechanisms
governing SANOS memories characteristics, Proc. IMW, 2009, pp.60-63.

E. Vianello, M. Bocquet, et al, Program Efficiency and High
Temperature Retention of SiN High-K Based Memories, Proc. Infos, 2009.
14 G. Molas, M. Bocquet, et al, Reliability of charge trapping memories
with high-k control dielectrics, Proc. Infos, 2009.