 | Rachid Bouchakour |
| IM2NP - Polytech' Marseille Ecole Polytechnique Universitaire de Marseille, Dpt Microélectronique et Télécommunications IMT Technopôle de Château - Gombert 13451 Marseille cedex 20 | |
| téléphone : + 33 (0) 4 91 05 47 80 fax : +33 (0) 4 91 05 47 82 | |
| mail : rachid.bouchakour@im2np.fr |
Professeur Cl. Exc., Université d'Aix-Marseille
Publications récentes :
Bouchakour R., Harabech N., Canet P., Mirabel J.M., Boivin P., Pizzuto O.- Modeling of a floating-gate EEPROM cell using a charge sheet approach.- Proceedings of 43rd IEEE Midwest Symposium on Circuits and Systems, Lansing, Michigan, USA, vol. 3, p. 1264-1267, 2000
Canet P., Bouchakour R., Harabech N., Boivin P., Mirabel J.M.- Study of signal programming to improve EEPROM cell reliability.- Proceedings of 43rd IEEE Midwest Symposium on Circuits and Systems, Lansing, Michigan, USA, vol. 3, p. 1144-1147, 2000
Harabech N., Autran J.L., Bouchakour R., Canet P., Pizzuto O.- Simulation of transient behavior of an EEPROM cell using a semi-quantum model for tunnelling current.- Proceedings of 43rd IEEE Midwest Symposium on Circuits and Systems, Lansing, Michigan, USA, vol. 2, p. 992-994, 2000
Harabech N., Bouchakour R., Canet P., Pannier P., Sorbier J.P.- Extraction of Fowler-Nordheim parameters of thin SiO2 oxide film including polysilicon gate depletion : validation with an EEPROM memory cell.- Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), Geneva, Switzerland, p. II.441-444, 2000
Bouchakour R., Harabech N., Canet P., Boivin P., Mirabel J.M.- Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunnelling capacitance and polysilicon gate depletion effect.- Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), Sydney, Australia, p. IV.822-825, 2001
Bouchakour R., Harabech N., Canet P., Mirabel J.M., Boivin P., Pizzuto O.- A new physical based compact model of floating-gate EEPROM cells.- Journal of Non-Crystalline Solids, vol. 280, p.122-126, 2001
Canet P., Bouchakour R., Harabech N.- EEPROM programming study, time and degradation aspects.- Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS), Sydney, Australia, p. IV.846-849, 2001
Canet P., Bouchakour R., Harabech N., Boivin P., Mirabel J.M., Plossu C.- Improvement of EEPROM cell reliability by optimization of signal programming.- Journal of Non-Crystalline Solids, vol. 280, p.116-121, 2001
Canet P., Bouchakour R., Harabech N., Razafindramora J., Boivin Ph., Mirabel J.M.- EEPROM programming signal study : reliability and quickness.- Proceedings of the Sophia Antipolis Forum on Microelectronics (SAME), Sophia Antipolis, France, p. 46-49, 2001
Harabech N., Bouchakour R., Canet P., Laffont R., Boivin Ph., Mirabel J.M.- EEPROM cell negative programming consumption and reliability impact.- Proceedings of the Sophia Antipolis Forum on Microelectronics (SAME), Sophia Antipolis, France, p. 50-53, 2001
Plossu C., Croci S., Monti N., Bouchakour R., Laffont R., Boivin P., Mirabel J.M.- Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress.- Journal of Non-Crystalline Solids, vol. 280, p. 103-109, 2001
Sorbier J.P., Plossu C., Crocci S., Boivin P., Renard S., Harrabech N., Bouchakour R.- Extraction of band diagram parameters from Fowler-Nordheim model in silicon dioxide.- Journal of Non-Crystalline Solids, vol. 280, p. 96-102 , 2001
Yao T., Bouchakour R., Billiot G.- Analytical model of Fowler Nordheim tunnel injection for design and simulation of complex memories circuits.- Journal of Non-Crystalline Solids, vol. 280, p. 92-95, 2001
Bouchakour R.- Revue des modèles Spice du transistor MOSFET.- in "Traité EGEM - Modèles électriques pour la conception des circuits intégrés silicium", Hermès, à paraître, 2002
Canet P., Bouchakour R., Razafindramora J., Lalande F., Mirabel J.M.- Very fast EEPROM erasing study.- Proceedings of the 28th European Solid-State Circuits Conference (ESSCIRC'2002), Florence, Italy, p. 683-686, 2002
Laffont R., Razafindramora J., Canet P., Bouchakour R., Mirabel J.M.- Decreasing EEPROM programming bias with negative voltage, reliability impact.- Proceedings of the IEEE International Workshop on Memory Technology, Design and Testing, Isle of Bendor, France, p. 168-173, 2002
Canet P., Bouchakour R., Lalande F., Mirabel J.M. - EEPROM cell design : paradoxical choice of the coupling ratio. - Journal of Non-Crystalline Solids, vol. 322, p. 246-249, 2003
Laffont R., Masson P., Bernardini S., Bouchakour R., Mirabel J.M. - A new floating compact model applied to Flash memory cell. - Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 250-255, 2003
Bouchakour R., Portal J.M., Gallière J.M., Azaïas F., Bertrand Y., Renovell M.- A compact DC model of gate oxide short defect.- Microelectronic Engineering, vol. 72, n° 1-4, p. 140-148, 2004
Lopez L., Masson P., Née D., Bouchakour R.- Temperature and drain voltage dependence of gate-induced drain leakage.- Microelectronic Engineering, vol. 72, n° 1-4, p. 101-105, 2004
Canet P., Lalande F., Razafindramora J., Bouquet V., Postel-Pellerin J., Bouchakour R., Mirabel J.M.- Integrated reliability in EEPROM nonvolatile memory cell design.- Proceedings of IEEE Non-Volatile Semiconductor Memory Workshop, Orlando, Florida, USA, p. 66–69, 2004
Lopez L., Nee D., Masson P., Bouchakour R.- A low cost test vehicle for embedded DRAM capacitor : Investigation and monitoring of the process.- Proceedings of the IEEE International Reliability Physics Symposium, USA, p. 498-501, 2004
Ragad H., Bouchakour R., Lalande F., Portal J.M., Mirabel J.M.- A pseudo 2D analysis of the velocity saturation region for flash cell modelling.- Proceedings of the Non-Volatile Memory Technology Symposium, USA, p. 92-99, 2004
Ranica R., Villaret A., Malinge P., Mazoyer P., Lenoble D., Candelier P., Jacquet F., Masson P., Bouchakour R., Fournel R., Schoellkopf J.P., Skotnicki T.- A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM.- Proceedings of the VLSI Technology Symposium, Hawai, p. 128-129, 2004
Mirabel M., Régnier A., Bouchakour R., Laffont R., Masson P.- Floating gate MOS Transistor with double control gate.- Brevet STMicroelectronics - Université d'Aix-Marseille, Dépôt US n°11/155306, 17 juin 2005
Gilibert F., Rideau D., Payet F., Boeuf F., Batail E., Minondo M., Bouchakour R., Skotnicki T., Jaouen H.- Strained Si/SiGe MOSFET capacitance modeling based on band structure analysis.- Proceedings of the 35th European Solid State Device Research Conference (ESSDERC’2005), Grenoble, 12-16 septembre 2005, p. 281–284, 2005
Lopez L., Masson P., Nee D., Bouchakour R.- A model to explain the C-V curves of DRAM capacitors with silicon electrodes and trapping dielectrics.- Proceedings of ICMTD’05, 1st International Conference on Memory Technology and Design, Giens, France, mai 2005, p. 85-88, 2005
Ranica R., Villaret A., Malinge P., Candelier P., Masson P., Bouchakour R., Mazoyer P., Skotnicki T.- 1T-Bulk DRAM cell with improved performances: the way to scaling.- Proceedings of ICMTD’05, 1st International Conference on Memory Technology and Design, Giens, France, mai 2005, p. 59-52, 2005
Ranica R., Villaret A., Malinge P., Gasiot G., Mazoyer P., Roche P., Candelier P., Jacquet F., Masson P., Bouchakour R., Fournel R., Schoellkopf J.P., Skotnicki T.- Scaled 1T-Bulk devices built with CMOS 90 nm technology for low-cost eDRAM applications.- Proceedings of VLSI Technology Symposium, Kyoto, Japan, June 14-16 2005, p. 38-39, 2005
Régnier A., Portal J.M., Bouchakour R., Renovell M.- Modeling halo implant failures in MOS sub-micron technology.- Proceedings of the IEEE Latin American Test Workshop, (LATW’05), Salvador da Bahia, Brazil, p. 29-33, 2005
Bouquet V., Canet P., Lalande F., Bouchakour R., Mirabel J.M.- Non volatile memory cell design : coupling ratio impact on tunnel oxide reliability.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1873-1877, 2005
Gilibert F., Rideau D., Dray A., Agut F., Minondo M., Juge A., Masson P., Bouchakour R.- Characterization and modeling of gate-induced-drain-leakage.- IEICE Transactions on Electronics, vol. E88-C, n° 5, p. 829-837, 2005
Ranica R., Villaret A., Malinge P., Candelier P., Masson P., Bouchakour R., Mazoyer P., Skotnicki T.- Modelling of the 1T-Bulk capacitor-less DRAM cell with improved performances : the way to scaling.- Solid-State Electronics, Solid-State Electronics, vol. 12, n° 12, p. 1776-1777, 2005
Ranica R., Villaret A., Mazoyer P., Monfray S., Chanemougame D., Masson P., Regnier A., Dray C., Waltz P., Bez R., Bouchakour R., Skotnicki T.- A new 40nm SONos structure based on backside trapping for nanoscale memories.- IEEE Transactions on Nanotechnology, vol. 4, n° 5, p. 581–587, 2005
Razafindramora J., P. Canet, F. Lalande, R. Bouchakour, P. Boivin, J-M. Mirabel.- Study of stressed oxides degradation : application to the prediction of a non-volatile memory cell endurance.- Journal of Non-Crystalline Solids, vol. 351, p. 1878-1884, 2005
Regnier A., Laffont R., Bouchakour R., Mirabel J.M.- A new architecture of dual control gate EEPROM.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1906-1910, 2005
Postel-Pellerin J., Lalande F., Canet P., Boutahar S., Bouchakour R., Pizzuto O., Regnier A.- Impact of stress on Fowler-Nordheim parameters effects on EEPROM threshold voltage.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 610-614, 2007
Regnier A., Portal J.M., Bouchakour R.- NMOS electrical model for halo implant study.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 620-624, 2007
Regnier A., Saillet B., Portal J.M., Bouchakour R.- CHE and CHISEL characterization procedure for compact Flash cell model.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 625-629, 2007
Zahi Y., Laffont R., Lalande F., Boutahar S., Bouchakour R.- Tunneling injection temperature dependence in EEPROM cell.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 648-652, 2007
Raguet J.R., Bidal V., Regnier A., Mirabel J.M., Laffont R., Bouchakour R.- New EEPROM concept for single bit operation.- Solid-State Electronics, vol. 52, n° 10, p. 1525-1529, 2008
