 | Pierre Canet |
| IM2NP - Polytech' Marseille Ecole Polytechnique Universitaire de Marseille, Dpt Microélectronique et Télécommunications IMT Technopôle de Château - Gombert 13451 Marseille cedex 20 | |
| téléphone : + 33 (0) 4 91 05 47 86 fax : +33 (0) 4 91 05 47 82 | |
| mail : pierre.canet@im2np.fr |
Microélectronique
Modélisation et caractérisation
Transistors MOS, Mémoire Non Volatile (EEPROM)
Bouchakour R., Harabech N., Canet P., Mirabel J.M., Boivin P., Pizzuto O.- Modeling of a floating-gate EEPROM cell using a charge sheet approach.- Proceedings of 43rd IEEE Midwest Symposium on Circuits and Systems, Lansing, Michigan, USA, vol. 3, p. 1264-1267, 2000
Canet P., Bouchakour R., Harabech N., Boivin P., Mirabel J.M.- Study of signal programming to improve EEPROM cell reliability.- Proceedings of 43rd IEEE Midwest Symposium on Circuits and Systems, Lansing, Michigan, USA, vol. 3, p. 1144-1147, 2000
Harabech N., Autran J.L., Bouchakour R., Canet P., Pizzuto O.- Simulation of transient behavior of an EEPROM cell using a semi-quantum model for tunnelling current.- Proceedings of 43rd IEEE Midwest Symposium on Circuits and Systems, Lansing, Michigan, USA, vol. 2, p. 992-994, 2000
Harabech N., Bouchakour R., Canet P., Pannier P., Sorbier J.P.- Extraction of Fowler-Nordheim parameters of thin SiO2 oxide film including polysilicon gate depletion : validation with an EEPROM memory cell.- Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), Geneva, Switzerland, p. II.441-444, 2000
Bouchakour R., Harabech N., Canet P., Boivin P., Mirabel J.M.- Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunnelling capacitance and polysilicon gate depletion effect.- Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), Sydney, Australia, p. IV.822-825, 2001
Bouchakour R., Harabech N., Canet P., Mirabel J.M., Boivin P., Pizzuto O.- A new physical based compact model of floating-gate EEPROM cells.- Journal of Non-Crystalline Solids, vol. 280, p.122-126, 2001
Canet P., Bouchakour R., Harabech N.- EEPROM programming study, time and degradation aspects.- Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS), Sydney, Australia, p. IV.846-849, 2001
Canet P., Bouchakour R., Harabech N., Boivin P., Mirabel J.M., Plossu C.- Improvement of EEPROM cell reliability by optimization of signal programming.- Journal of Non-Crystalline Solids, vol. 280, p.116-121, 2001
Canet P., Bouchakour R., Harabech N., Razafindramora J., Boivin Ph., Mirabel J.M.- EEPROM programming signal study : reliability and quickness.- Proceedings of the Sophia Antipolis Forum on Microelectronics (SAME), Sophia Antipolis, France, p. 46-49, 2001
Harabech N., Bouchakour R., Canet P., Laffont R., Boivin Ph., Mirabel J.M.- EEPROM cell negative programming consumption and reliability impact.- Proceedings of the Sophia Antipolis Forum on Microelectronics (SAME), Sophia Antipolis, France, p. 50-53, 2001
Canet P., Bouchakour R., Razafindramora J., Lalande F., Mirabel J.M.- Very fast EEPROM erasing study.- Proceedings of the 28th European Solid-State Circuits Conference (ESSCIRC'2002), Florence, Italy, p. 683-686, 2002
Laffont R., Razafindramora J., Canet P., Bouchakour R., Mirabel J.M.- Decreasing EEPROM programming bias with negative voltage, reliability impact.- Proceedings of the IEEE International Workshop on Memory Technology, Design and Testing, Isle of Bendor, France, p. 168-173, 2002
Canet P., Bouchakour R., Lalande F., Mirabel J.M. - EEPROM cell design : paradoxical choice of the coupling ratio. - Journal of Non-Crystalline Solids, vol. 322, p. 246-249, 2003
Canet P., Lalande F., Bouchakour R., Martin M.- Non volatile memory cell design : sizing assisted by a predictive model.- Proceedings of the 4th Annual Non-Volatile Memory Technology Symposium, (NVMTS2003), San Diego, California, p.13-1-13-4, 2003
Laffont R., P. Masson, P. Canet, B. Delsuc, R. Bouchakour, Mirabel J.M.- New Fowler Nordheim current determination in EEPROM cell from transient measurements.- Proceedings of the 33rd European Solid-State Device Research Conference (ESSDERC'2003), Estoril, Portugal, p. 71-74, 2003
Canet P., Lalande F., Razafindramora J., Bouquet V., Postel-Pellerin J., Bouchakour R., Mirabel J.M.- Integrated reliability in EEPROM nonvolatile memory cell design.- Proceedings of IEEE Non-Volatile Semiconductor Memory Workshop, Orlando, Florida, USA, p. 66–69, 2004
Bouquet V., Canet P., Lalande F., Devin J., Leconte B.- Fowler-Nordheim erasing time prediction in Flash memory.- Proceedings of the 6th Annual Non-Volatile Memory Technology Symposium (NVMTS’2005), Dallas, Texas, November 7-10, 2005, CD-ROM, 2005
Bouquet V., Canet P., Lalande F., Devin J., Leconte B., Mariéma N.- Variation of flash memory threshold voltage correlated with applied voltage slope in Fowler Nordheim erase mode.- Proceedings of Ph.D. Research In Micro-Electronics & Electronics (PRIME’2005), Lausanne, Switzerland, July 25-28 2005, vol. 1, p. 86-88, 2005
Bouquet V., Canet P., Lalande F., Bouchakour R., Mirabel J.M.- Non volatile memory cell design : coupling ratio impact on tunnel oxide reliability.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1873-1877, 2005
Razafindramora J., P. Canet, F. Lalande, R. Bouchakour, P. Boivin, J.M. Mirabel Deterioration of stressed oxides : application to the prediction of a non-volatile memory cell endurance.- Journal of Non-Crystalline Solids, vol. 351, p.1878-1884, 2005.
Postel-Pellerin J., F. Lalande, P. Canet, S. Boutahar, R. Bouchakour, O. Pizzuto, A. Régnier.- Impact of Stress on Fowler-Nordheim Parameters Effects on EEPROM Threshold Voltage.- Journal of Non-Crystalline Solids, vol.353, p.610-614, 2007
Mouhoubi S., T. Yao, F. Lalande, P. Canet.- Thermal Behavior of Floating Gate Oxide Defects (Moving Bits). - Journal of Non-Crystalline Solids, vol.353, p.615-619, 2007Maure A., B. Delsuc, J. Devin, P. Canet, F. Lalande.- Flash Memory Cell Compact Modeling Using PSP Model.– BMAS, San José, California, September 25-26, 2008.
Postel-Pellerin J., P. Canet, F. Lalande, R. Bouchakour, F. Jeuland, B. Bertello, B. VillardA full TCAD simulation and 3D parasitic capacitances extraction in 90nm NAND Flash memories.– NVMTS2008, Pacific Grove, California, November 11-14, 2008, proceedings p.86-89.
