 | Stéphanie Bozzo-Escoubas |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 80 95 |
| | Stéphanie Bozzo-Escoubas |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 80 95 |
Maître de conférences, Université d'Aix-Marseille
Domaines d'activité :
contraintes, silicium, SiGe, diffusionPublications récentes dans des revues avec comité de lecture
Parmentier R., Lemarchand F., Cathelinaud M., Lequime M., Amra C., Labat S., Bozzo S., Bocquet F., Thomas O., Dominici C., Charaï A.- “Piezoelectric tantalum pentoxide studied for optical tunable application”.- Applied Optics 41, n°6, 2002.
Morris S.J., Fougeres P., Bozzo-Escoubas S., Bodnar S., Gaillard S.- “Simultaneous optical measurement of Germanium content and Boron doping in strained heteroepitaxial SiGe films using a novel data-analysis technique”.- Materials Science in Semiconductor Processing Vol. 7, p. 383-388, 2004.
Morris S.J., Fougeres P., Bozzo-Escoubas S., Bodnar S., Gaillard S.- “Simultaneous optical measurement of Ge content and doping in strained epitaxial films using a novel data-analysis technique”.-Materials Science in Semiconductor Processing, Vol. 8, p. 261-266, 2005.
Eberlein M., Escoubas S., Gailhanou M., Thomas O., Rohr P., Coppard R.-“Diffraction from periodic arrays of oxide-filled trenches in silicon: investigation of local strain”.-Materials Research Society Symposium Proceedings vol. 913, 2006.
Eberlein M., Escoubas S., Gailhanou M., Thomas O.,Micha J.-S., Rohr P., Coppard R.- “Investigation by High-Resolution X-Ray Diffraction of the local strains induced in Si by periodic arrays of oxide filled trenches”.- Physica Status Solidi (a), n° 8, p.2542-2547, 2007.
Eberlein M., Escoubas S., Gailhanou M., Thomas O., Rohr P., Coppard R. Influence of crystallographic orientation on local strains in silicon: a combined high-resolution X-ray diffraction and finite element modeling investigation. Thin Solid Films, vol.516, p. 8042–8048, 2008
Escoubas S., Brillet H., Mesarotti T., Raymond G., Thomas O., Morin P., “Local strains induced in silicon channel by a periodic array of nitride capped poly lines investigated by High-Resolution X-Ray Diffraction”. Materials Science & Engineering B, Vol. 154-155, p. 129-132, 2008.
Escoubas S., Eberlein M., Rohr P. and Thomas O., "High-resolution X-ray diffraction as a tool to investigate the evolution of local stress in sub-micrometric Si lines isolated by periodic arrays of oxide-filled trenches". Materials Science in Semiconductor Processing, article in press, 2009
