 | Marc Gailhanou |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 81 25 |
| | Marc Gailhanou |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 81 25 |
Ingénieur de recherche CNRS
Domaines d'activité :
diffraction de rayons X, synchrotron, semiconducteurs
Publications récentes dans des revues avec comité de lecture
Bechade J-L., Brenner R., Goudeau P., Gailhanou M. Influence of temperature on X-ray diffraction analysis of ZrO2 oxide layers formed on zirconium based alloys using synchrotron radiation. Mat. Science Forum, 404-407, 803-8, 2002
Bernard F., Paris S., Vrel D., Gailhanou M., Gachon J.C., Gaffet E. Time-resolved XRD experiments adapted to SHS reactions: autoreview. Intern. Journal of Self-Propagating High-Temperature Synthesis, 11, n° 2, 181-90, 2002
Ersen O., Pierron-Bohnes V., Ulhaq-Bouillet C., Pirri C., Tuilier M-H., Berling D., Bertoncini P., Gailhanou M., Thiaudiere D. Epitaxy stabilised CaF2-type ternary Col-xFe xSi2 silicides on Si , 111): DAFS and HRTEM measurements. Applied Surface Science, 188, n° 1-2, 146-50 , 2002
Ersen O., Ulhaq-Bouillet C., Pierron-Bohnes V., Tuilier M-H., Berling D., Bertoncini P., Pirri C., Gailhanou M., Thiaudiere D. Evidence of a ternary Co1-xFexSi2 phase with a CaF2-type structure: High-resolution transmission electron microscopy and diffraction anomalous fine structure study. Applied Physics Letters, 81, n° 13,. 2346-8 , 2002
Gauthier V., Bernard F., Gaffet E., Vrel D., Gailhanou M., Larpin J.P. Investigations of the formation mechanism of nanostructured NbAl 3 via MASHS reaction. Intermetallics, 10, n° 4, 377-89, 2002
Hennet L., Thiaudiere D., Gailhanou M., Landron C., Coutures J-P., Price D.L. Fast X-ray scattering measurements on molten alumina using a 120° curved position sensitive detector. Review of Scientific Instruments, 73, n° 1, 124-9, 2002
Panicaud B., Renault P.O., Grosseau-Poussard J.L., Dinhut J.F., Thiaudiere D., Gailhanou M. Measurement of stress in phosphated-iron oxide layers by in-situ diffraction of synchrotron radiation. Materials Science Forum, 404-407, 809-14 , 2002
Vrel D., Girodon-Boulandet N., Paris S., Mazue J.F., Couqueberg E., Gailhanou M., Thiaudiere D., Gaffet E., Bernard F. A new experimental setup for the time resolved X-ray diffraction study of self-propagating high-temperature synthesis. Review of Scientific Instruments, 73, n° 2, 422-8, 2002
Den-Auwer C., Drot R., Simoni E., Conradson S.D. Gailhanou M., de-Leon J.M. Grazing incidence XAFS spectroscopy of uranyl sorbed onto TiO2 rutile surfaces. New Journal of Chemistry, 27, 3 648-655, 2003
Ersen O., Pierron-Bohnes V., Tuilier M-H., Pirri C., Khouchaf L., Gailhanou M. Short- and long-range order in iron and cobalt disilicides thin films investigated by the diffraction anomalous fine structure technique. Phy. Rev. B, 67, no.9,. 94116-1-12, 2003
Bechade J-L., Brenner R., Goudeau P., Gailhanou M. Determination of residual stresses in a zirconia layer by X-ray diffraction and by a micromechanical approach: thermoelastic anisotropy effect. Revue de Metallurgie, 100, no.12, 1151-6, 2004
Gergaud P., Rivero C., Gailhanou M., Thomas O., Froment B. , Jaouen H. Exploring Ni-Si thin-film reactions by means of simultaneous synchrotron. X-ray diffraction and substrate curvature measurements. Mat. Sci. and Engin. B, 114-15, 67-71, 2004
Lacaze E., Michel J.P., Goldmann M., Gailhanou M., de-Boissieu M., Alba M. Bistable nematic and smectic anchoring in the liquid crystal octylcyanobiphenyl, 8CB adsorbed on a MoS2 single crystal. Phys. Rev. E., 69, 41705-8, 2004
Michel J. P., Lacaze E., Alba M., de-Boissieu M. , Gailhanou M., Goldmann M. Optical gratings formed in thin smectic films frustrated on a single crystalline substrate. Phys. Rev. E., 70, 11709-12, 2004
Rollet A.L., Bessada C., Auger Y., Melin P. , Gailhanou M., Thiaudiere D. A new cell for high temperature EXAFS measurements in molten rare earth fluorides . Nucl. Instr. And Meth. B, 226, 447-452, 2004
Rollet A.L., Bessada C., Rakhmatoulline A., Auger Y., Melin P., Gailhanou M., Thiaudiere D. In situ high temperature NMR and EXAFS experiments in rare-earth fluoride molten salts. Comptes Rendus de Chimie., 7, 12 1135-1140, 2004
Goudeau P., Mendibide C., Steyer P., Esnouf C., Thiaudiere D., Gailhanou M., Fontaine J. X-ray diffraction analysis of the residual stress state in PVD TiN/CrN multilayer coatings deposited on tool steel. Surface & Coatings Technology, vol.200, no.1-4, 165-9., 2005
Goudeau P., Vandenbulcke L., Met C., De Barros M.I., AndreAzza P., Thiaudiere D., Gailhanou M. X-ray diffraction analysis of residual stresses in smooth fined-grain diamond coatings deposited on TA6V alloys. Surface & Coatings Technology, vol.200, no.1-4,. 170-3., 2005
Mendibide C., Steyer P., Esnouf C., Goudeau P., Thiaudiere D., Gailhanou M., Fontaine J. X-ray diffraction analysis of the residual stress state in PVD TiN/CrN multilayer coatings deposited on tool steel. Surf. and Coating Technol. , 200, 165-169, 2005
Michel J. P., Lacaze E., Goldmann M., Gailhanou M., de-Boissieu M., Alba M. Revealing the structure of focal conics cores and their influence on the evolution with temperature: An x-ray study of ultra-thin 8CB films. Mol. Cryst. and Liquid Cryst., 437, 1343-1353, 2005
Paris S., Gaffet E., Vrel D., Thiaudiere D., Gailhanou M., Bernard F. Time-resolved XRD experiments for a fine description of mechanisms induced during reactive sintering. Science of Sintering, 37, 1, 27-34, 2005
Rivero C., Gergaud P., Gailhanou M., Boivin P., Fornara P., Niel S., Thomas O. Stress developement and relaxation during reaction of a cobalt film with a silicon substrate. Defect and Diffusion Forum, 237-240, 518-523, 2005
Rivero C., Gergaud P., Gailhanou M., Thomas O., Froment B., Jaouen H., Carron V. Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni-Si reactive film formation. Appl. Phys. Letters 87, 48-50, 2005
Michel J.P., Lacaze E., Goldmann M., Gailhanou M., de Boissieu M., Alba M. Structure of smectic defect cores: X-ray study of 8CB liquid crystal ultrathin films. Physical Review Letters, vol. 96, n° 2, p. 027803, 2006
Belin T., Millot N., Bovet N., Gailhanou M. In situ and time resolved study of the gamma/alpha-Fe2O3 transition in nanometric particles. Journal of Solid State Chemistry, vol 180, n° 8, p 2377-2385, 2007
Eberlein M., Escoubas S., Gailhanou M., Thomas O.,Micha J.-S., Rohr P., Coppard R. Investigation by high-resolution X-ray diffraction of the local strains induced in Si by periodic arrays of oxide filled trenches. Physica Status Solidi (a), vol. 8, p. 2542-2547, 2007
Gailhanou H., Van Miltenburg, Rogez J., Olives J., Amouric M., Gaucher E.C., Blanc P. Thermodynamic properties of anhydrous smectite MX-80, illite Imt-2 and mixed layer illitesmectite ISCz-1 as determined by calorimetric methods. Part I : Heat capacities, heat contents and entropies. Geochimica et Cosmochimica Acta, p. 5463-5473, 2007
Gailhanou M., Loubens A., Micha J.-S., Charlet B., Minkevich A.A., Fortunier R., Thomas O. Strain field in silicon on insulator lines using high resolution x-ray diffraction. Applied Physics Letters, vol. 90, p. 111914, 2007
Minkevich A.A., Gailhanou M., Micha J.-S., Charlet B., Chamard V., Thomas O. Inversion of the diffraction pattern from an inhomogeneously strained crystal using an iterative algorithm. Physical Review B, vol 76, p104106, 2007
Eberlein M., Escoubas S., Gailhanou M., Thomas O., Rohr P., Coppard R. Influence of crystallographic orientation on local strains in silicon: a combined high-resolution X-ray diffraction and finite element modeling investigation. Thin Solid Films, vol.516, p. 8042–8048, 2008
