 | Michel Lannoo |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Case 142 13397 Marseille Cedex 20 France | |
| téléphone : + 33 (0) 4 91 28 91 54 fax : +33 (0) 4 91 28 87 75 | |
| mail : michel.lannoo@im2np.fr |
| | Michel Lannoo |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Case 142 13397 Marseille Cedex 20 France | |
| téléphone : + 33 (0) 4 91 28 91 54 fax : +33 (0) 4 91 28 87 75 | |
| mail : michel.lannoo@im2np.fr |
Professeur, Université d'Aix-Marseille
Domaines de recherche :
Structure électronique de nanostructures de silicium : calculs ab initio et empiriques, self-energie et excitons, calcul du courant dans des nanostructures artificielles.
Courant STM et défauts de surface.
Publications récentes :
Allan G., Delerue C., Lannoo M.- Nature of impurity states in doped amorphous silicon.- Physical Review B, vol. 61, p. 10206-, 2000
De la Broise X., Delerue C., Lannoo M., Grandidier B, Stiévenard D.- Theory of scanning tunneling microscopy of defects on semiconductor surfaces.- Physical Review B, vol. 61, p. 2138-, 2000
Delerue C., Lannoo M., Allan G.- Excitonic and quasiparticle gaps in Si nanocrystals.- Physical Review Letters, vol. 84, p. 2457-, 2000
Grandidier B., de la Broise X., Stiévenard D., Delerue C., Lannoo M.- Defect assisted tunneling current : a revised interpretation of scanning tunneling spectroscopy measurements.- Applied Physics Letters, vol. 76, p. 3142-, 2000
Niquet Y.M., Allan G., Delerue C., Lannoo M.- Quantum confinement in germanium nanocrystals.- Applied Physics Letters, vol. 77, p. 1182-, 2000
Niquet Y.M., Delerue C., Allan G., Lannoo M.- An improved method for tight binding parametrization: application to silicon nanostructures.- Physical Review B, vol. 62, p. 5109-, 2000
Delerue C., Allan G., Lannoo M.- Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals.- Physical Review B, vol. 64 , p. 193402-, 2001
Delerue C., Lannoo M., Allan G.- Tight binding for complex semiconductor systems.- Physica Status Solidi B, vol. 227 , n° 1 , p. 115-149, 2001
Niquet Y. M., Delerue C., Lannoo M., Allan G.- Single-particle tunneling in semiconductor quantum dots.- Physical Review B, vol. 64 , n° 11, p. 113305-, 2001
Niquet Y.M., Delerue C., Allan G., Lannoo M.- Theory of electronic transport in semiconductor nanostructures.- Material Research Society Symposia Proceedings, vol. 638, p. -, 2001
Allan G., Delerue C., Krzeminski C., Lannoo M.- Nanoelectronics.- in "Nanostructured Materials. Selected Synthesis Methods and Applications", P. Knauth and J. Schoonman (eds), Kluwer, à paraître, 2002
Allan G., Lannoo M., Delerue C.- Bulk and nanocrystalline semiconductors.- in "Tight-binding Hamiltonians and their Applications", Turchi P.E.A. and Gonis A. (eds), Springer-Verlag, à paraître, 2002
Bescond M., Lannoo M., Goguenheim D., Autran J.L.- Towards a full microscopic approach to the modeling of nanotransistors.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, à paraître, 2002
Niquet Y.M., Delerue C., Allan G., Lannoo M.- Interpretation and theory of tunneling experiments on single nanostructure.- Physical Review B, vol. 65, p. 165334-, 2002
Bescond M., Lannoo M., Goguenheim D. and Autran J.L. - Towards a full microscopic approach to the modeling of transistors with nanometer dimensions. - Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 160-167, 2003
Delerue C., Allan G., Lannoo M. - Dimensionality-dependent self-energy corrections and exchange-correlation potential in semiconductor nanostructures. - Physical Review Letters, vol. 90, n° 7, p. 076803-, 2003
Delerue C., Lannoo M., Allan G. - Concept of dielectric constant for nanosized systems. - Physical Review B, vol. 68, n° 11, p. 115411-, 2003
Lannoo M., Delerue C., Allan G., Niquet Y.M. - Confinement effects and tunnelling through quantum dots. - vol. 361, n° 1803, p. 259-272, 2003
Bescond M., Autran J.L., Munteanu D., Lannoo M.- Atomic-scale modeling of Double-Gate, MOSFETs using a tight-binding Green’s function formalism.- Solid-State Electronics, vol. 48, p. 567-574, 2004
Lannoo M., Delerue C.- Nanostructures. Theory and modelling.- Springer, Nanosciences and Technology Series, 2004
Bescond M., Autran J.L., Cavassilas N., Munteanu D., Lannoo M.- Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green’s function formalism.- Journal of Computational Electronics, vol. 3, p. 393-396, 2005
Lannoo M.- Atomistic nanodevice simulation.- Solid State Phenomena, vol. 108-109, p. 787-, 2005
Nehari K., Cavassilas N., Autran J.L., Bescond M., Munteanu D., Lannoo M.- Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET’s : an atomistic study.- Solid State Electronics, vol. 50, n°4, p. 680-686, 2006
Bescond M., Cavassilas N., Lannoo M.- Effective-mass approach for n-type semiconductor Nanowire MOSFETs arbitrarily oriented.- Nanotechnology, vol. 18, p. 255201, 2007
Bescond M., Cavassilas N., Nehari K., Lannoo M.- Tight-binding calculations of Ge-nanowire bandstructures.- Journal of Computational Electronics, vol. 6, p. 341, 2007
Nehari K., Cavassilas N., Michelini F., Bescond M., Autran JL., Lannoo M.- Full-band study of current across silicon nanowire transistors.- Applied Physics Letters, vol. 90, p. 132112, 2007
Chanier T., Opahle I., Sargolzaei M., Hayn R., Lannoo M.- Magnetic state around cation vacancies in II-VI semiconductors.- Physical Review Letters, vol. 100, p. 026405 , 2008
Nehari, K., Lannoo, M., Michelini, F., Cavassilas, N., Bescond, M., Autran, J. L.- Improved effective mass theory for silicon nanostructures.- Applied Physics Letters, vol. 93, no 9, p. 092103, 2008
