 médaille de bronze CNRS 2003 | Dominique Mangelinck |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Case 142 13397 Marseille Cedex 20 France | |
| téléphone : + 33 (0) 4 91 28 89 86 fax : +33 (0) 4 91 28 87 75 | |
| mail :dominique.mangelinck@im2np.fr |
Directeur de recherche CNRS
Domaines d'activité :
Nouveaux matériaux pour la microélectronique - Siliciures - Réactivité interfaciale
Publications récentes :
Chi D.Z., Mangelinck D., Dai J.Y., Lahiri S.K.- DLTS characterization of electrically active defects in n-Si induced by rapid thermal annealing Ni(Pt) silicidation.- Applied Physics Letters, vol. 73, p. 3385-, 2000
Lee P.S., Mangelinck D., Dai J.Y., Osipowicz T., Pey K.L., Ding J., Ho C.S.- On the Ni-Si phase transformation with/without native oxide.- Microelectronic Engineering, vol. 51-52, p. 583-594, 2000
Lee P.S., Mangelinck D., Pey K.L., Ding J., Osipowicz T., Ho C.S., Chen G.L., Chan L.- Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopy.- in "Nondestructive Methods for Materials Characterization", T. Matikas, N. Meyendorf, G. Baaklini, R. Gilmore (eds), Material Research Society Symposia Proceedings, vol. 591, p. 269-, 2000
Lee P.S., Mangelinck D., Pey K.L., Shen Z.X., Ding J., Osipowicz T., See A.- Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicides.- Electrochemical and Solid State Letters, vol. 3, p. 153-, 2000
Lee P.S., Pey K.L., Mangelinck D., Ding J., Wee A.S.T., Chan L.- Improved NiSi salicide process using presilicide N2+ implant for MOSFETs.- IEEE Electron Devices Letters, vol. 21, p. 566-, 2000
Chi D.Z., Mangelinck D., Lahiri S.K., Lee P.S., Pey K.L.- A comparative study of current-voltage characteristics of Ni- and Ni(Pt)-silicided p+/n diodes.- Applied Physics Letters, vol. 78, p. 3256-, 2001
Chi D.Z., Mangelinck D., Zuruzi A.S., Wong A.S.W., Lahiri S.K.- Nickel silicide as a contact material for submicron CMOS devices.- Journal of Electronic Materials, vol. 30, p. 1483-1488, 2001
Lee P.S., Mangelinck D., Lahiri S.K., Pey K.L., Ding J., Chi D.Z., Dai J.Y., See A.- Ni silicide formation on Si(100) and poly-Si with a presilicide N implantation.- Journal of Electronic Materials, .- vol. 30, p. 1554-1559, 2001
Lee P.S., Pey K.L., Mangelinck D., Ding J., Wee A.S.T., Chan L.- New salicidation technology with Ni(Pt) alloy for MOSFETs.- IEEE Electron Devices Letters, vol. 22, p. 568-, 2001
Seng H.L., Osipowitcz T., Lee P.S., Mangelinck D., Sum T.C., Watt F.- Micro-RBS study of nickel silicide formation.- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, vol.181, p. 399-, 2001
Gas P., Girardeaux C., Mangelinck D., Portavoce A.- Reaction and diffusion at interfaces of micro and nano structured materials.- Material Science and Engineering B, acceptée, 2002
Jarmar T., Seger J., Ericson F., Mangelinck D., Smith U. and Zhang S.L.- Morphological and phase stability of nickel germanosilicide on Si1-xGex under thermal stress.- Journal of Applied Physics, vol. 92, p. 7193-, 2002
Lee P.S., Mangelinck D., Pey K.L., Ding J., Chi D.Z., Dai J.Y., See A.- Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack.- Microelectronic Engineering, vol. 60, p. 171-, 2002
Lee P.S., Pey K.L., Mangelinck D., Ding J., Chi D. Z., Dai J.Y., Chan L.- Phase and layer stability of Ni- and Ni(Pt)- silicides on narrow poly-Si lines.- Journal of the Electrochemical Society, vol. 149, p. G331-, 2002
Lee P.S., Pey K.L., Mangelinck D., Ding J., Osipowicz T., See A.- Layer inversion of Ni(Pt)Si on mixed phase Si films.- Electrochemical and Solid State Letters, vol. 5, p. G15-, 2002
Seger J., Zhang S.L., Mangelinck D. and Radamson H. H.- Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1-xGex.- Applied Physics Letters, vol. 81, p. 1978-, 2002
Gas P., Girardeaux C., Mangelinck D., Portavoce A. - Reaction and diffusion at interfaces of micro and nanostructured materials. - Material Science and Engineering B, vol. 101, p. 43-, 2003
Lee P.S., Pey K.L., Mangelinck D., Ding J., Chan L. - In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime < 400 degrees C. - Solid State Communications, vol. 128, n° 9-10, p. 325-328, 2003
Mangelinck D., Gas P., T. Badeche T., Taing E., Nemouchi F., Perrin-Pellegrino C., Niel S., Mirabel J.-M., Farez L., Albarede P.H. - Formation of C49-TiSi2 in flash memories : a nucleation controlled phenomenon ? - Microelectronics Engineering, vol. 70, p. 220-, 2003
Bergman C., Gas p., Mangelinck D.- Nanoscale effects on interfacial reactions.- Journal of the Electroanalytical Chemistry, vol. 573, n° 1, p. 71-75, 2004
Mangelinck D., Lee P.S., Osipowitcz T., Pey K.L.- Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry.- Nuclear Instruments and Methods in Physics Research B, vol. 215, n° 3-4, p. 495-500, 2004
Pey K.L., Lee P.S. and Mangelinck D.- Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines.- Thin Solid Films, vol. 462-463, p. 137-145, 2004
Drillet P, Dulcy C, Pazsko F, Mangelinck D., Gas P., Clugnet G., Bergman C., Vaughan G.- Real time synchrotron analysis of the initial stages of the galvanization process in Al containing Zn baths.- Revue de Métallurgie, Cahiers d’Informations Techniques, vol. 102, n° 1, p. 75-78, 2005
Lee P.S., Pey K.L., Mangelinck D., Chi D.Z., Osipowicz T.- On the morphological changes of Ni- and Ni(Pt)-silicides.- Journal of the Electrochemical Society, vol. 152, n° 4, p. G305-G308, 2005
Nemouchi F., Mangelinck D. Bergman C., Gas P.- Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate.- Applied Physics Letters, vol. 86, p. 041903-05, 2005
Mangelinck D.- L'effet d'alliage dans les siliciures : mécanismes fondamentaux de croissance et stabilité - applications à la microélectronique.- Habilitation à diriger des recherches, Université d'Aix-Marseille, 11 février 2005
Hoummada K., Cadel E., Mangelinck D., Perrin-Pellegrino C., Blavette D., Deconihout B. First stages of the formation of Ni silicide by atom probe tomography. Applied Physics Letters, vol. 89, n° 18, p. 81905, 2006
Hoummada K., Mangelinck D., Perrin C., Gas P., Carron V., Holliger P., et Ziegler E. Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature : role of agglomeration. Microelectronics Engineering, vol. 83, n° 11, p. 2264-2267, 2006
Mangelinck D. Effect of a third element on the stability of NiSi thin films on Si. Defect and Diffusion Forum, vol. 249, p. 127-134, 2006
Mangelinck D. Synthèse et stabilité des RDI siliciures/semiconducteurs: approche thermocinétique. 1er Congrès International sur La Basse Dimensionalité et la NanoTechnologie, El Jadida, Maroc, 1-3 Novembre 2006
Cojocaru-Mirédin O., Mangelinck D., Hoummada K., Cadel E., Blavette D., Deconihout B., et Perrin-Pellegrino C. Snowplow effect and reactive diffusion in the Pt doped Ni–Si system. Scripta Materialia, vol 57, 5, p. 373-376, 2007
Hoummada K., Mangelinck D., Cadel E., Perrin-Pellegrino C., Blavette D., et Deconihout B. Formation of Ni silicide at room temperature studied by laser atom probe tomography. Microelectronic Engineering, vol. 84, n° 11, p. 2517-, 2007
Perrin C., Nemouchi F., Clugnet G., et Mangelinck D. Anisotropy of the thermal expansion of the Ni(Si[sub 1 - x]Ge[sub x]) phases investigated by high-temperature x-ray diffraction. Journal of Applied Physics, vol 101, 7, p. 073512, 2007
Portavoce A, Simola R., Mangelinck D., Bernardini J., P.fornara P. Dopant diffusion during amorphous Silicon crystallisation. Diffusion and Defect Data, vol 264,33-38, 2007
Yao H. B, Bouville M, Chi D Z, Sun H P, Pan X Q, Srolovitz D J, Mangelinck D. Interplay between grain boundary grooving, stress, and dealloying in the agglomeration of NiSi1-xGex films. Electrochemical and Solid State Letters, vol. 10, p. H53-H55, 2007
Hoummada K., Mangelinck D., Perrin C., Carron V., et Holliger P. Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions. Journal of Applied Physics, vol 104, 2, p. 024313, 2008
Hoummada K., Portavoce A., Perrin-Pellegrino C., Mangelinck D., et Bergman C. Differential scanning calorimetry measurements of kinetic factors involved in salicide process. Applied Physics Letters, vol 92, p. 133109, 2008
Mangelinck D., Hoummada K. Effect of stress on the transformation of Ni2Si into NiSi. Applied Physics Letters, vol. 92, 254101, 2008
Mangelinck D., K. Hoummada, O. Cojocaru-Mirédin, E. Cadel, C. Perrin-Pellegrino, D. Blavette. Atom probe tomography of Ni silicides : First stages of reaction and redistribution of Pt. Microelectronic Engineering, vol. 85, n° 10, p. 1995-1999, 2008
