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Brevets

Courtade L., Lisoni-Reyes J., Goux L., Turquat C., Muller Ch., Wouters D. – Method for manufacturing a memory element comprising a resistivity–switching NiO layer and devices obtained thereof. – Brevet, US 7,960,775 B2, published June 14, 2011

http://www.freepatentsonline.com/7960775.html

http://patent.astamuse.com/ja/published/JP/No/2009164580

Chapitres d’ouvrages

Muller Ch., Deleruyelle D., Ginez O. – Emerging Memory Concepts: Materials, Modeling and Design. – In "Design Technology for Heterogeneous Embedded Systems", Edited by G. Nicolescu, I. O’Connor, C. Piguet, Springer, Chapter 16, pp. 339–364, December 2011, ISBN: 978-94-007-1124-2

http://dx.doi.org/10.1007/978-94-007-1125-9_16

Muller Ch. – FRAM ferroelectric memories: basic operations, limitations, innovations and applications. – In "Ferroelectric Dielectrics Integrated on Silicon", Edited by E. Defaÿ, Wiley-ISTE, Chapter 11, pp. 379–402, September 2011, ISBN: 978-1-84821-313-5

Muller Ch. – Mémoires ferroélectriques FRAM : principe, limitations, innovations, applications. – In "Diélectriques ferroélectriques intégrés sur silicium", Edité par E. Defaÿ, Hermès Science, Chapitre 11, pp. 425–451, mai 2011, ISBN : 978-2-7462-2562-6

Muller Ch. – Diffraction des neutrons : principe, dispositifs expérimentaux et applications. – In "Neutrons et Matériaux", Edité par W. Paulus et J. Meinnel, Journal de Physique IV, vol. 103, pp. 101–132, 2003, ISBN : 2-86883-656-9

http://dx.doi.org/10.1051/jp4:20030004

Publications récentes dans des revues internationales à comité de lecture (depuis 2010)

Portal J-M., Bocquet M., Deleruyelle D., Muller Ch. – Non-volatile Flip-Flop based on unipolar ReRAM for power-down applications. – Journal of Low Power Electronics, vol. 8, no. 1, pp. 1 – 10, 2012

http://dx.doi.org/10.1166/jolpe.2012.1172

Bocquet M., Deleruyelle D., Muller Ch., Portal J-M. – Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories. – Applied Physics Letters, vol. 98, no. 26, pp. 263507(1–3), 2011

http://dx.doi.org/10.1063/1.3605591

Deleruyelle D., Dumas C., Carmona M., Muller Ch., Spiga S., Fanciulli M. – Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy. – Applied Physics Express, vol. 4, no. 5, pp. 051101(1–3), 2011

http://dx.doi.org/10.1143/APEX.4.051101

Dumas C., Deleruyelle D., Demolliens A., Muller Ch., Spiga S., Cianci E., Fanciulli M., Tortorelli I., Bez R. – Resistive switching characteristics of NiO films deposited on top of W and Cu pillar bottom electrodes. – Thin Solid Films, vol. 519, no. 11, pp. 3798–3803, 2011

http://dx.doi.org/10.1016/j.tsf.2010.12.244

Muller Ch., Deleruyelle D., Müller R., Thomas M., Demolliens A., Turquat Ch., Spiga S. – Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO₂ switching layer. – Solid-State Electronics, vol. 56, no. 1, pp. 168–174, 2011

http://dx.doi.org/10.1016/j.sse.2010.10.006

Putero M., Ouled Khachroum T., Coulet M-V., Deleruyelle D., Ziegler E., Muller Ch. – Evidence for correlated structural and electrical changes in Ge₂Sb₂Te₅ thin film from combined synchrotron x-ray techniques and sheet resistance measurements during in situ thermal annealing. – Journal of Applied Crystallography, vol. 44, no. 4, pp. 858–864, 2011

http://dx.doi.org/10.1107/S0021889811024095

Demolliens A., Muller Ch., Müller R., Turquat Ch., Goux L., Deleruyelle D., Wouters D.J. – Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures. – Journal of Crystal Growth, vol. 312, no. 22, pp. 3267–3275, 2010

http://dx.doi.org/10.1016/j.jcrysgro.2010.08.008

Deleruyelle D., Muller Ch., Amouroux J., Müller R. – Electrical nano-characterisation of copper tetracyanoquinodimethane layers dedicated to resistive random access memories. – Applied Physics Letters, vol. 96, no. 26, pp. 263504(1–3), 2010

http://dx.doi.org/10.1063/1.3458596

Goux L., Lisoni J.G., Jurczak M., Wouters D.J., Courtade L., Muller Ch. – Coexistence of the bipolar and unipolar resistive switching modes in NiO cells made by thermal oxidation of Ni layers. – Journal of Applied Physics, vol. 107, no. 2, pp. 024512(1–7), 2010

http://dx.doi.org/10.1063/1.3275426

Proceedings de conférences internationales (depuis 2010)

Aziza H., Bocquet M., Portal J-M., Muller Ch. – Bipolar OxRRAM memory array reliability evaluation based on fault injection. IEEE Proceedings of International Design and Test Workshop, pp. 78–81, 2011

http://dx.doi.org/10.1109/IDT.2011.6123106

Cagli C., Buckley J., Jousseaume V., Salaun A., Grampeix H., Nodin J.F., Feldis H., Persico A., Lorenzi P., Massari L., Rao R., Irrera F., Cabout T., Aussenac F., Carabasse C., Coue M., Perniola L., Blaise P., Zheng F., Hong Yu Y., Ghibaudo G., Deleruyelle D., Bocquet M., Muller Ch., Padovani A., Pirrotta O., Vandelli L., Larcher L., Reimbold G., de Salvo B. – Experimental and theoretical study of electrode effects in HfO₂ based RRAM. – IEEE Proceedings of International Electron Devices Meeting, pp. 28.7.1–28.7.4, 2011

http://dx.doi.org/10.1109/IEDM.2011.6131634

Muller Ch., Deleruyelle D., Ginez O., Portal J-M., Bocquet M. – Design challenges for prototypical and emerging memory concepts relying on resistance switching. – IEEE Proceedings of Custom Integrated Circuits Conference, pp. 1–7, 2011

http://dx.doi.org/10.1109/CICC.2011.6055316

Onkaraiah S., Gaillardon P-E., Reyboz M., Clermidy F., Portal J-M., Bocquet M., Muller Ch. – Using OxRRAM memories for improving communications of reconfigurable FPGA architectures. – IEEE Proceedings of International Symposium on Nanoscale Architectures, pp. 65–69, 2011

http://dx.doi.org/10.1109/NANOARCH.2011.5941485

Amouroux J., Della Marca V., Petit E., Deleruyelle D., Putero M., Muller Ch., Boivin P., Jalaguier E., Colonna J-P., Maillot P. Fares L. – Growth and in-line characterization of silicon nanodots integrated in discrete charge trapping non-volatile memories. – Materials Research Society Symposium Proceedings, vol. 1337, pp. q01-04, 2011

http://dx.doi.org/10.1557/opl.2011.975

Tirano S., Perniola L., Buckley J., Cluzel J., Jousseaume V., Muller Ch., Deleruyelle D., De Salvo B., Reimbold G. – Accurate analysis of parasitic current overshoot during forming operation in RRAMs. – Microelectronic Engineering, vol. 88, no. 7, pp. 1129–1132, 2011

http://dx.doi.org/10.1016/j.mee.2011.03.062

Guiraud A., Breil N., Gros-Jean M., Deleruyelle D., Micolau G., Muller Ch., Chérault N., Morin P. – Interface study of SiO₂/HfO₂/SiO₂ stacks used as interpoly dielectric for future generations of embedded Flash memories. – Materials Research Society Symposium Proceedings, vol. 1252, pp. 1252-I07-08, 2010

http://dx.doi.org/10.1557/PROC-1252-I07-08

Khachane M., Chevallier V., Gavarri J-R., Muller Ch., Turquat Ch., Elaatmani M., Zegzouti A., Luk'yanchuk I.A. – Study of ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films deposited by sol-gel method. – Ferroelectrics, vol. 397, pp. 112–121, 2010

http://dx.doi.org/10.1080/00150193.2010.484748

	Christophe Muller
	IM2NP - Polytech' Marseille Ecole Polytechnique Universitaire de Marseille, Dpt Microélectronique et Télécommunications IMT Technopôle de Château - Gombert 13451 Marseille cedex 20
	téléphone : + 33 (0) 4 91 05 47 79 fax : +33 (0) 4 91 05 47 82
	mail : christophe.muller@im2np.fr