 | Daniela Munteanu |
| IM2NP Bât. IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France | |
| téléphone : + 33 (0) 4 13 55 20 49 fax : +33 (0) 4 13 55 20 01 | |
| mail : daniela.munteanu@im2np.fr |
| | Daniela Munteanu |
| IM2NP Bât. IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France | |
| téléphone : + 33 (0) 4 13 55 20 49 fax : +33 (0) 4 13 55 20 01 | |
| mail : daniela.munteanu@im2np.fr |
Chargée de recherche CNRS, Jeune chercheur CNRS-STIC (ATIP 2OO2)
Domaines d'activité :
Microélectronique. Caractérisation électrique, modélisation et simulation.
Matériaux et dispositifs Silicium-Sur-Isolant (SOI). Transistor MOS ultime.
Dispositifs innovants sur SOI. Transport non-stationnaire et balistique.
Effets quantiques. Phénomènes transitoires dans les dispositifs SOI.
Publications récentes :
Cristoloveanu S., D. Munteanu, M. Liu.- A review of the pseudo-MOS transistor in SOI wafers : operation, parameter extraction, and applications.- IEEE Transactions on Electron Devices, vol. 47, n° 5, p. 1018-1027, 2000
Cristoloveanu S., T. Ernst, D. Munteanu, T. Ouisse.- Ultimate MOSFET on SOI : ultra-thin, single gate, double gate or ground plane.- International Journal of High Speed Electronics and Systems, vol. 10, n° 1, p. 217-230, 2000
Munteanu D., G. Le Carval, G. Guegan.- Non-stationary transport effects: impact on performances of realistic 50nm MOSFET technology.- The TCAD Driven CAD Journal, vol. 11, no. 11, p. 7-9, 2000
Munteanu D., Le Carval G., Fenouillet-Beranger C., Faynot O., Pelloie J.L.- Non-stationary transport effects : impact on 0.1µm PD SOI technology.- Proceedings of the 2000 IEEE International SOI Conference, IEEE, p. 58-59, 2000
Ionescu A.M., Munteanu D.- A novel in situ characterization technique : the SOI intrinsic point-probe MOSFET.- IEEE Electron Device Letters, vol. 22, n° 4, p. 166-169, 2001
Masson P., Autran J.L., Munteanu D.- DYNAMOS : a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects.- Second European Workshop ULIS, F. Balestra (ed), Editions INPG, Grenoble, p. 109-112, 2001
Munteanu D., Le Carval G., Fenouillet-Beranger C.- Analysis of non-stationary transport and quantum effects in realistic 0.1µm partially-depleted SOI technology.- Proceedings of the Tenth International Symposium on Silicon-On-Insulator Technology and Devices, Electrochemical Society Meeting (ECS), Electrochemical Society, vol. 2011-3, p. 199-204, 2001
Munteanu D., Le Carval G., Guegan G.- Impact of non-stationary transport effects on realistic 50nm MOS technology.- Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems (MSM'2001), M. Laudon and B. Romanowicz (eds.), Computational Publications, p. 462-465, 2001
Munteanu D., Le Carval G., Guegan G.- Non-stationary transport effects : impact on performances of realistic 50nm MOSFET technology.- Proceedings of the 2nd European Workshop on Ultimate Integration of Silicon (ULIS'2001), F. Balestra (ed.), Editions INPG, Grenoble, p. 105-108, 2001
Munteanu D., O. Rozeau, S. Cristoloveanu, J. Jomaah, J. Boussey, M. Wetzel, P. de la Houssaye, I. Lagnado.- Enhanced performance SOS materials and devices for RF applications.- Journal of the Electrochemical Society, vol. 148, n° 4, p. 218-224, 2001
Autran J.L. (ed), Munteanu D. (ass. ed).- Proceedings of the 6th European Conference "Radiation and its Effects on Components and Systems" (RADECS 2002), Proceedings IEEE 01TH8605C (The Institute of Electrical and Electronics Engineers), 2002
Autran J.L. (guest ed), Munteanu D. (ass. ed).- IEEE Transactions on Nuclear Science, Special Issue, vol. NS-49, n° 3, June 2002
Ionescu A.M., Munteanu D.- New compact model for generation drain current transients in weak and moderate inversion regimes of submicron floating-body PD SOI MOSFETs.- Proceedings of the 5th International Conference on Modeling and Simulation of Microsystems (MSM'2002), Puerto Rico, USA, 22-25 April 2002, p. 754-758, 2002
Masson P., Autran J.L., Munteanu D.- DYNAMOS : a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects.- Solid State Electronics, vol. 46, p. 1051-1059, 2002
Munteanu D., Autran J.L.- Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices.- Proceedings of the 3rd European Workshop on Ultimate Integration of Silicon (ULIS 2002), Munich, Germany, 7-8 March 2002, à paraître, 2002
Munteanu D., G. Le Carval, G. Guegan.- Impact of technological parameters on non-stationary transport in realistic 50nm MOS technology.- Solid State Electronics, vol. 46, p. 1045-1050, 2002
Munteanu D., G. Le Carval, G. Guegan.- Investigation of non-stationary transport and quantum effects in realistic deep submicron partially-depleted SOI technology.- Electrochemical and Solid State Letters, vol. 5, n° 5, p. G29-G31, 2002
Munteanu D., Ionescu A.M.- Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs.- IEEE Transactions on Electron Devices, vol. 49, p. 1198-1205, 2002
Munteanu D., Le Carval G.- Assessment of anomalous behavior in hydrodynamic simulation of CMOS bulk and partially-depleted SOI devices.- Journal of the Electrochemical Society, vol. 149, p. G574-G580, 2002
Autran J.L. and Munteanu D. - Tunneling component of the ballistic current in ultimate double-gate devices. - Electrochemical and Solid-State Letters, vol. 6, p. G95-G97, 2003
Autran J.L., Munteanu D., Dinescu R. and Houssa M. - Stretch-out of high-permittivity MOS capacitance voltage curves resulting from a lateral non-uniform oxide charge distribution. - Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 219-224, 2003
Autran J.L., Munteanu D.- Les architectures innovantes sur silicium mince : un second souffle pour la loi de Moore ? Revue de l’Electricité et de l’Electronique, n° 8, p. 21-31, 2003
Bescond M., Autran J.L., Munteanu D., Lannoo M.- Atomic-scale modeling of Double-Gate, MOSFETs using a tight-binding Green’s function formalism.- Solid-State Electronics, vol. 48, p. 567-574, 2004
Ionescu A. M., Munteanu D., Hefyene N., Anghel C.- Compact modeling of weak inversion generation transients in SOI MOSFETs.- Journal of the Electrochemical Society, vol. 151, p. G396-G401, 2004
Autran J.L., Munteanu D., Houssa M.- Electrical characterization, modeling and simulation of high-k based MOS devices.- in “Fundamental and Technological Aspects of High-k Gate Dielectrics”, M. Houssa (ed), Institute of Physics Publishing, London, Chapter 3.4, p. 251-289, 2004
Autran J.L., Aubert M., Tintori O., Munteanu D., Decarre E.- An analytical subthreshold current model for ballistic double-gate MOSFETs.- Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, vol. 2, p. 171-174, 2004
Autran J.L., Munteanu D., Houssa M.- Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack.- Material Research Society Symposium Proceedings, vol. 811, p. D6-1, 2004
Autran J.L., Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T.- Quantum-mechanical analytical modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates.- Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, vol. 2, p. 163-166, 2004
Bescond M., Autran J.L., Cavassilas N., Munteanu D., Lannoo M.- Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green's function formalism.- Proceedings of the 10th IEEE International Workshop on Computational Electronics (IWCE10), Purdue University, Indiana, USA, p. 84-85, 2004
Bescond M., Néhari K., Autran J.L., Cavassilas N., Munteanu D., Lannoo M.- 3D quantum modeling and simulation of multi-gate nanowire MOSFETs.- Proceedings of the 50th IEEE International Electron Device Meeting (IEDM 2004), San Francisco, Etats-Unis, p. 617-620, 2004
Castellani-Coulié K., Munteanu D., Ferlet-Cavrois V., Autran J.L.- Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations.- Proceedings of the European Workshop on Radiation and its Effects on Components and Systems (RADECS’2004), Madrid, Espagne, p. 127-130, 2004
Harrison S., Coronel P., Leverd F., Cerutti R., Palla R., Delille D., Borel S., Pantel R., Dutartre D., Morand Y., Samson M.P., Lenoble D., Talbot A., Boeuf F., Sanquer M., Jehl X., Bustos J., Brut H., Cros A., Munteanu D., Autran J.L., Skotnicki T.- High performance SON (Silicon-On-Nothing) double gate MOSFET with perfect electrostatic integrity for nanoscale regime.- Proceedings of the 2004 IEEE Silicon Nanoelectronic Workshop (SNW’2004), Honolulu, Hawaii, USA, p. 3-4, 2004
Harrison S., Cros A., Coronel P., Leverd F., Beverina A., Cerutti R., Wacquez R., Bustos J., Delille D., Tavel B., Barge D., Bienacel J., Samson MP., Martin F., Maitrejean S., Munteanu D., Autran J.L., Skotnicki T.- Poly-Gate REplacement Through Contact Hole (PRETCH): A new method for high-k/metal gate and multi-oxide implementation on chip.- Proceedings of the 50th IEEE International Electron Device Meeting (IEDM 2004), San Francisco, Etats-Unis, p. 291-294, 2004
Harrison S., Munteanu D., Autran J.L., Cros A., Cerutti R., Skotnicki T.- Electrical characterization and modeling of high-performance SON DG MOSFETs.- Proceedings of the 34th European Solid State Device Research Conference (ESSDERC’2004), Leuven, Belgique, p. 373-376, 2004
Munteanu D., Autran J.L., Bescond M., Houssa M.- Impact of high-k gate dielectric on decananometer double-gate MOSFETs : gate-fringing field and parasitic charge effects.- Proceedings of the 5th European Workshop on Ultimate Integration of Silicon (ULIS 2004), Leuven, Belgium, p. 39-42, 2004
Autran J.L., Decarre E., Munteanu D., Bescond M., Houssa M.- A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-κ gate dielectrics.- Journal of Non-Crystalline Solids, vol. 351, p. 1897-1901, 2005
Autran J.L., Munteanu D., Houssa M., Castellani-Coulié K., Said A.- Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-κ dielectrics.- Japanese Journal of Applied Physics, p. 8362-8366, 2005
Autran J.L., Munteanu D., Tintori O., Aubert M., Decarre E.- An analytical subthreshold current model for ballistic quantum-wire MOS transistors.- Molecular Simulation, vol. 31, n° 2-3, p. 179-183, 2005
Autran J.L., Nehari K., Munteanu D.- Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects.- Molecular Simulation, vol. 31, p. 839-843, 2005
Bescond M., Autran J.L., Cavassilas N., Munteanu D., Lannoo M.- Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green’s function formalism.- Journal of Computational Electronics, vol. 3, p. 393-396, 2005
Castellani-Coulié K., Munteanu D., Autran J.L., Ferlet-Cavrois V., Paillet P., Baggio J.- Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs.- IEEE Transactions on Nuclear Science, vol. NS-52, p. 2137- 2143, 2005
Castellani-Coulié K., Munteanu D., Ferlet-Cavrois V., Autran J.L.- Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations.- IEEE Transactions on Nuclear Science, vol. NS-52, p. 1474-1479, 2005
Munteanu D., Autran J.L., Harrison S.- Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-κ gate dielectrics.- Journal of Non-Crystalline Solids, vol. 351, p. 1911-1918, 2005 2005
Munteanu D., Autran J.L., Harrison S., Nehari K., Tintori O., Skotnicki T.- Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET.- Molecular Simulation, vol. 31, p. 831-837, 2005
Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio. Investigation of 30nm gate-all-around MOSFET sensitivity to heavy ions: a 3-D simulation study. IEEE Transactions on Nuclear Science, vol. 53, n° 4, p. 1950-1958, 2006
Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio. Analysis of 45nm multi-gate transistors behavior under heavy ion irradiation by 3D device simulation. IEEE Transactions on Nuclear Science, vol. 53, n° 6, p. 3265-3270, 2006
Munteanu D., J.L. Autran, X. Loussier, S. Harrison, R. Cerutti, T. Skotnicki. Quantum short-channel compact modeling of drain-current in double-gate MOSFET. Solid State Electronics, vol. 50, n° 4, p. 680-686, 2006
Nehari K., Cavassilas N., Autran J.L., Bescond M., Munteanu D., Lannoo M. Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET’s : an atomistic study. Solid State Electronics, vol. 50, n°4, p. 680-686, 2006
Autran J.L. and Munteanu D. Au-delà du transistor MOS sur silicium massif : Nouveaux matériaux, architectures innovantes et dispositifs ultimes. Revue d'Electricité et de l'Electronique, n° 4, p. 25-37, 2007
Autran J.L., Roche P., Borel J., Sudre C., Castellani-Coulié K., Munteanu D., Parrassin T., Gasiot G., Schoellkopf J.P. Altitude SEE Test European Platform (ASTEP): project overview, first results in CMOS 130 nm and perspectives. IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 1002-1009, 2007
Barral V., Poiroux T., Vinet M., Widiez J., Previtali B., Grosgeorges P., Le Carval G., Barraud S., Autran J.L., Munteanu D., Deleonibus S. Experimental determination of the channel backscattering coefficient on 10 to 70 nm- metal-gate double-gate transistors. Solid State Electronics, vol. 51, n° 4, p. 537–542, 2007
Loussier X., Munteanu D., Autran J.L. Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits. Journal of Non-Crystalline Solids, vol. 353, p. 639–644, 2007
Munteanu D., Autran J-L., Ferlet-Cavrois V., Paillet P., Baggio J., Castellani-Coulié K. 3D quantum numerical simulation of single-event transient in multiple-gate nanowire MOSFETs. IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 994-1001, 2007
Munteanu D., J.L. Autran, X. Loussier, S. Harrison, R. Cerutti. Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects. Molecular Simulation, vol. 33, n° 7, p. 605-611, 2007
Autran J.L. and Munteanu D. Simulation of electron transport in nanoscale independent-gate double-gate devices using a full 2D Green’s function approach. Journal of Computational and Theoretical Nanoscience, vol. 5, p. 1120–1127, 2008
Loussier X., Munteanu D., Autran J.L., Tintori O. Impact of geometrical and electrical parameters on speed performances in ultimate double-gate metal-oxide-semiconductor field-effect transistor. Japanese Journal of Applied Physics, vol. 47, n° 5, p. 3390-3395, 2008
Martinie S., Le Carval G., Munteanu D., Soliveres S., Autran J.L. Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits. IEEE Transactions on Electron Devices, vol. 55, no. 9, p. 2443-2453, 2008
Moreau M., Munteanu D. and Autran J.L. Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics, vol. 47, no. 9, p. 7013-7018, 2008
Munteanu D. and Autran J.L. Modeling and simulation of single-event effects in digital devices and Ics. IEEE Transactions on Nuclear Science, vol. 55, no. 4, p. 1854-1878, 2008
Barral V., Poiroux T., Barraud S., Bonno O., Andrieu F., Faynot O., Munteanu D., Autran J.L. and Deleonibus S. Evidences on the physical origin of the unexpected transport degradation in ultimate n-FDSOI devices. IEEE Transactions on Nanotechnology, in press, 2009
Barral V., Poiroux T., Bournel A., Munteanu D., Autran J.L. and Deleonibus S. Experimental investigation on the quasi-ballistic transport: part I- Determination of a new backscattering coefficient extraction methodology. IEEE Transactions on Electron Devices, in press, 2009
Barral V., Poiroux T., Munteanu D., Autran J.L. and Deleonibus S. Experimental investigation on the quasi-ballistic transport: Part II- Backscattering coefficient extraction and link with the mobility. IEEE Transactions on Electron Devices, in press, 2009
Martinie S., Le Carval G., Munteanu D., Autran J.L. New unified analytical model of backscattering coefficient from low to high field conditions in quasi-ballistic transport. IEEE Electron Device Letters, in press, 2009
