page personnelle

Maître de conférences, Université d'Aix-Marseille

Responsable du Master « Commercialisation en Instrumentation Scientifique » (http://mastercis.u-3mrs.fr/)

Domaines d'activité :

Matériau et composants SiC. Applications aux détecteurs de rayonnement.

Publications récentes dans des revues avec comité de lecture

Kazan M., Ottaviani L., Moussaed E., Nader R., Masri P.- Effect of introducing gettering sites and subsequent Au diffusion on the thermal conductivity and the free carrier concentration in n-type 4H-SiC.- Journal of Applied Physics,- vol. 103, n° 053707, p. 1-6, 2008

Vervisch V., Etienne H., Torregrosa F., Ottaviani L., Pasquinelli M., Sarnet T., Delaporte P.- Realization of ultra-shallow junctions by plasma immersion ion implantation and laser annealing.- Journal of Vacuum Science & Technology,- vol. B 26, p. 286, 2008

Lancin M., Regula G., Douin J., Idrissi H., Ottaviani L., Pichaud B.- Investigation of mechanical stress-induced double stacking faults in (11-20) highly n-doped 4H-SiC combining optical microscopy TEM contrast simulation and dislocation core reconstruction.- Mat. Sci. Forum,- vol. 527-529, p. 379-82, 2006

Leandri C., Aufray B., Le Lay G., Girardeaux C., Ottaviani C. and Cricenti A.- Ordered silicon structures on silver (100) at 230°C.- Journal de Physique IV - Proceedings,- vol. 132, p. 311, 2006

Leandri C., Le Lay G., Aufray B., Girardeaux C., Avila J., Dávila M.E., Asensio M.C., Ottaviani .-C., Cricenti A.- Self-aligned silicon quantum wires on Ag (110).- Surface Science,- vol. 574, n° 1, p. L9-L15, 2005

Ottaviani L., Barakel D. , Vervisch V., Pasquinelli M.- Electrical characterizations of hydrogenated 4H-SiC epitaxial samples.- Solid State Phenomena,- 108-109, 677-682, 2005

Ottaviani L., Idrissi H., Hidalgo P., Lancin M., Pichaud B.- Structure and electrical studies of partial dislocations and faults in, 11-20-oriented 4H-SiC.- Phys. Stat Sol C,- 6, 1792-6, 2005

Hidalgo P., Ottaviani L., Idrissi H., Lancin M., Martinuzzi S., Pichaud B.- Structural characterisation of, 11, 20 4H-SiC substrates by cathodoluminescence and X-ray topography.- Europ. Phys. Journ.:Appl. Phys.,- 27, 231-3, 2004

Ottaviani L., Hidalgo P., Idrissi H., Lancin M., Martinuzzi S., Pichaud B.- Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography.- Journ. Phys.: Cond. Mat.,- 16, 107-14, 2004

Lazar M., Raynaud C., Planson D., Chante J.P., Locatelli M.L., Ottaviani L., Godignon P.- Effect of Ion implantations parameters on Al dopant redistribution in SiC after annealing : Defect recovery and electrical properties of p-type layers.- J. Appl. Phys.,- 94, 2992-2998, 2003

Ottaviani L., Hidalgo P., Idrissi H., Lancin M., Martinuzzi S., Pichaud B.- Structural characterization of 6H and 4H-SiC polytypes by cathodoluminescence and X-Ray Topography.- J. of Physics : Condensed Matter,- 15, 1, 2003

Lazar M., Raynaud C., Planson D., Locatelli M.L., Ottaviani L., Isoird K., Chante J.P., Nipoti R., Poggi A., Cardinali G.- A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects.- Materials Science Forum,- 389-393, 827, 2002

Ottaviani L., Lazar M., Locatelli M.L., Chante J.P., Heera V., Skopura W., Voelskow M., Torchio P.- Annealing studies of Al-implanted 6H-SiC in an induction furnace.- Materials Science and Engineering,- vol. 91-92, p. 325-328, 2002

Ottaviani L., Lazar M., Locatelli M.L., Chante J.P., Heera V., Skorupa W., Voelskow M., Torchio P.- Annealing Studies of Al-implanted 6H-SiC in an induction furnace.- Mater. Sc. Eng. B.,- 91/92, 325-328, 2002

Ottaviani L., Lazar M., Locatelli M.L., Planson D., Chante J.P., Dubois C.- Characteristics of Aluminum-Implanted 6H-SiC Samples After Different Thermal Treatments.- Mater. Sc. Eng. B.,- 90, 301-308, 2002