 | Olivier Palais |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 231 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 83 46 mail : olivier.palais@im2np.fr |
| | Olivier Palais |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 231 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 83 46 mail : olivier.palais@im2np.fr |
Professeur, Université d'Aix-Marseille
Domaines d'activité :
Caractérisation des propriétés électriques des semi-conducteur (µW-PS, µ-PCD, LBIC, DLTS,…). Mesures et cartographies de concentrations d’impuretés.
Composants pour la conversion photovoltaïque et photodétecteurs
Publications récentes dans des revues avec comité de lecture
Dubois S, Palais O, Ribeyron PJ, Enjalbert N, Pasquinelli M, Martinuzzi S. Effect of intentional bulk contamination with iron on multicrystalline silicon solar cell properties. Journal of Applied Physics, vol. 102, p. 083525, 2007
Martinuzzi S., Gauthier M., Barakel D., Perichaud I., Le Quang N., Palais O., Goaer G. Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell properties. European Physical Journal : Applied Physics, vol. 40, p. 83-88, 2007
Martinuzzi S., Perichaud I., Palais O. Segregation phenomena in large-size cast multicrystalline Si ingots. Solar Energy Materials and Solar Cells, vol. 91, p. 1172, 2007
S. Martinuzzi, I. Périchaud and O. Palais “Segregation phenomena in large-size cast multicrystalline Si ingots”.- Solar Energy Materials and Solar Cells 91 (2007) 1172-1175
Dubois S, Palais O, P.J. Ribeyron «Determination at 300 K of the hole capture cross-section of chromium-boron pairs in p-type silicon. ».- Applied Physics Letters 89 (23) 2006
Dubois S, Palais O, Pasquinelli M, Martinuzzi S, Jaussaud C, «Influence of Substitutional Metallic Impurities on the Performances of P-Type Crystalline Silicon Solar Cells: The Case of Gold. ».- Journal of Applied Physics 100 (12) 2006
Dubois S, Palais O, Pasquinelli M, et al. « Influence of iron contamination on the performances of single-crystalline silicon solar cells: Computed and experimental results ».- Journal of Applied Physics 100 (2) 2006
Martinuzzi S., Palais O., Ostapenko S. Scanning techniques applied to the characterisation of p and n type multicristalline silicon. Mat. Sci. In Semiconductor Processing, vol. 9, n° 1-3, p. 230-235, 2006
Rathgeb S, Moeglin JP, Boffy A, M. Pasquinelli and O. Palais « Hysteresis. phenomena. in reverse biased InAsSbP/InAs heterostructure ».- Applied Physics Letters 89 (2) 2006
S. Martinuzzi, O. Palais, M. Pasquinelli and F. Ferrazza « N-type multicrystalline silicon wafers and rear junction solar cells».- European Physical Journal AP 32, 187-192 (2005)
A. Lamzatouar, O. Palais, O.B.M. Hardouin Duparc, J. Thibault, A. Charaï « Relationship between structure, segregation and electrical activity in grain boundaries».- Journal of Material Science 40 (12): 3163-3167 (2005)
O. Palais, P. Hidalgo and S. Martinuzzi « FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps ».- European Physical Journal AP. 27, 483-485 (2004)
O. Palais, L. Clerc, A. Arcari, M. Stemmer and S. Martinuzzi « Mapping of minority carrier lifetime and mobilities in imperfect silicon wafers ».– Materials Science and Engineering B102, 184-188 (2003)
O. Palais, A. Arcari « Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers ».- Journal of Applied Physics V.93. N°8 pp.4686-4690 (2003)
O. Palais, E. Yakimov, S. Martinuzzi « Minority carrier lifetime scan maps applied to iron concentration mapping in silicon wafers».-Materials Science and Engineering B- 91-92, 216-219 (2002)
