Title: Dynamical spin Hall conductivity in a magnetic disordered system
Author(s): van den Berg, T. L.; Raymond, L.; Verga, A.
Source: Physical Review B Volume: 84 Issue: 24 Published: DEC 27 2011
DOI: 10.1103/PhysRevB.84.245210

Title: Numerical modelling of impedance spectra of ionic conductor-insulator core-shell composites
Author(s): Laugier, J-M; Raymond, L.; Albinet, G.; et al.
Source: Modelling and Simulation in Materials Science and Engineering Volume: 19 Issue: 6 Published: SEP 2011
DOI: 10.1088/0965-0393/19/6/065001

Title: Three-dimensional k.p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
Author(s): Pons, Nicolas; Cavassilas, Nicolas; Raymond, Laurent; et al.
Source: Applied Physics Letters Volume: 99 Issue: 8 Published: AUG 22 2011
DOI: 10.1063/1.3628316

Title: Gap narrowing in charged and doped silicon nanoclusters
Author(s): Titov, A; Michelini, F; Raymond, L; et al.
Source: Physical Review B Volume: 82 Issue: 23 Published: DEC 10 2010
DOI: 10.1103/PhysRevB.82.235419

Title: Magneto-electric couplings in Sr 1− x Mn x Ti 1− y Mn y O 3
Author(s): R. O. Kuzian; et al.,
Source: IOP Conference Series: Materials Science and Engineering Volume: 15 Issue: 1 Pages: 012047 Published: 2010

Title: Mechanisms of magnetoelectricity in manganese-doped incipient ferroelectrics
Author(s): Kuzian, RO; Laguta, VV; Dare, AM; et al.
Source: Epl Volume: 92 Issue: 1 Published: 2010
DOI: 10.1209/0295-5075/92/17007

Title: Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
Author(s): Bescond, M; Lannoo, M; Raymond, L; et al.
Source: Journal of Applied Physics Volume: 107 Issue: 9 Published: 2010
DOI: 10.1063/1.3399999

Title: Three-dimensional k.p quantum simulations of p-type nanowire MOS transistors: influence of ionized impurity
Author(s): Pons, N.; Cavassilas, N.; Bescond, M.; et al.
Source: 2010 14th International Workshop on Computational Electronics (Iwce 2010) Pages: 89-92 Published: 2010

Title: 3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
Author(s): BESCOND, M; LANNOO, M; MICHELINI, F; et al.
Conference: International Conference on Superlattices, Nanostructures and Nanodevices Volume: 40 Pages: 756-758 Year: 2009
DOI: 10.1016/j.mejo.2008.11.009

Title: Evidence for impurity-induced polar state in Sr1-xMnxTiO3 from density functional calculations
Author(s): KONDAKOVA, IV; KUZIAN, RO; RAYMOND, L; et al.
Source: PHYSICAL REVIEW B Volume: 79 Issue: 13 Published: 2009
DOI: 10.1103/PhysRevB.79.134117

Title: Influence of Ionized Impurities in Silicon Nanowire MOS Transistors
Author(s): Bescond, M; Lannoo, M; Raymond, L; et al.
Source: Iwce-13: 2009 13th International Workshop on Computational Electronics Pages: 137-140 Published: 2009

Title: Original shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling
Author(s): PONS, N; CAVASSILAS, N; MICHELINI, F; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 106 Issue: 5 Published: 2009
DOI: 10.1063/1.3204550

Title: Stochastic continuum model of submonolayer epitaxial growth
Author(s): Raymond, L; Verga, A; Vvedensky, DD
Source: Materials Science in Semiconductor Processing Volume: 12 Issue: 1-2 Pages: 2-5 Published: 2009
DOI: 10.1016/j.mssp.2009.04.001

Title: Occam's razor on surfaces: renormalization of microscopic processes
Author(s): HASELWANDTER, CA; RAYMOND, L; VERGA, A; et al.
Source: JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 20 Issue: 30 Pages: - Published: JUL 30 2008
DOI: 10.1088/0953-8984/20/30/304203

Title: Ballistic transport in arbitrary oriented nanowire MOSFETs
Author(s): BESCOND, M; CAVASSILAS, N; RAYMOND, L; et al.
Conference: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors Volume: 110 Pages: 337-340 Year: 2006

Title: Comment on "Spin correlations in the paramagnetic phase and ring exchange in La2CuO4"
Author(s): RAYMOND, L; ALBINET, G; TREMBLAY, AMS
Source: PHYSICAL REVIEW LETTERS Volume: 97 Issue: 4 Pages: - Published: JUL 28 2006
DOI: 10.1103/PhysRevLett.97.049701

Title: Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Author(s): BESCOND, M; CAVASSILAS, N; KALNA, K; et al.
Conference: IEEE International Electron Devices Meeting Pages: 533-536 Year: 2005

Title: Dielectric resonances of ordered passive arrays
Author(s): SCHAFER, S; RAYMOND, L; ALBINET, G
Source: EUROPEAN PHYSICAL JOURNAL B Volume: 43 Issue: 1 Pages: 81-92 Published: JAN 2005
DOI: 10.1140/epjb/e2005-00030-x

Title: Dielectric resonances in disordered media
Author(s): RAYMOND, L; LAUGIER, JM; SCHAFER, S; et al.
Source: EUROPEAN PHYSICAL JOURNAL B Volume: 31 Issue: 3 Pages: 355-364 Published: FEB 2003
DOI: 10.1140/epjb/e2003-00042-6

Title: A palindromic half-line criterion for absence of eigenvalues and applications to substitution Hamiltonians
Author(s): DAMANIK, D; GHEZ, JM; RAYMOND, L
Source: ANNALES HENRI POINCARE Volume: 2 Issue: 5 Pages: 927-939 Published: 2001
DOI: 10.1007/s00023-001-8599-9

Title: Enhanced conductivity in ionic conductor-insulator composites: numerical models in two and three dimensions
Author(s): ALBINET, G; DEBIERRE, JM; KNAUTH, P; et al.
Source: EUROPEAN PHYSICAL JOURNAL B Volume: 22 Issue: 4 Pages: 421-427 Published: AUG 2001
DOI: 10.1007/s100510170092

Title: Propagating fronts in a bistable coupled map lattice
Author(s): FERNANDEZ, B; RAYMOND, L
Source: JOURNAL OF STATISTICAL PHYSICS Volume: 86 Issue: 1-2 Pages: 337-350 Published: JAN 1997
DOI: 10.1007/BF02180209

Title: STRUCTURE FACTOR OF 1D SYSTEMS (SUPERLATTICES) BASED ON 2-LETTER SUBSTITUTION RULES .1. DELTA (BRAGG) PEAKS
Author(s): KOLAR, M; IOCHUM, B; RAYMOND, L
Source: JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL Volume: 26 Issue: 24 Pages: 7343-7366 Published: DEC 21 1993
DOI: 10.1088/0305-4470/26/24/011