Gabrielle Regula
IM2NP
Faculté des Sciences et Techniques
Avenue Escadrille Normandie Niemen
Service 262
13397 Marseille Cedex 20
France

téléphone : + 33 (0) 4 91 28 27 56


fax : +33 (0) 4 91 28 27 93

mail : gabrielle.regula@univ-cezanne.fr

Maître de conférences, Université d'Aix-Marseille, Aix-Marseille III
Domaines d'activité :

matériaux à base de Si (Si, SiC, SiGe, SiO2) ; dislocations, fautes d’empilement (mobilité, propagation), croissance de cavités, ingénierie de défauts par implantation d’ions (gettering, jonctions ultra courtes, matériaux à faible permittivité diélectrique)

Publications récentes dans des revues avec comité de lecture

Regula G., Elbouayadi R., Pichaud B., Ntsoenzok E.- Nickel gettering in silicon: role of oxygen.- Solid State Phenomena,- 82-84, 355-360, 2002

Liu C., Ntsoenzok E., Delamare R., Alquier D., Regula G.- The role of a top oxide layer in cavities formed by MeV He implantation into Si.- Europ. Phys. J. : Appl. Phys.,- 23, 45-48, 2003

Leoni E., El Bouayadi R, Martinelli L., Regula G., Ntsoenzok E., Pichaud B., Pizzini S.- Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix.- Europ. Phys. Journ.: Appl. Phys.,- 27, 89-92, 2004

Idrissi H., Lancin M., Douin J., Regula G., Pichaud B.- Dynamical study of dislocations and 4H to 3C transformation induced by stress in, 11-20 4H-SiC.- Mat. Sci. Forum,- 483-485, 299-302, 2005

Idrissi H., Regula G., Lancin M., Douin J., Pichaud B.- Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending.- Phys. Stat Sol C,- 6, 1998-2003, 2005

Regula G., Lancin M., Idrissi H., Pichaud B., Douin J.- Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC.- Phil. Mag. Letters,- 85, 259-267, 2005

Lancin M., Regula G., Douin J., Idrissi H., Ottaviani L., Pichaud B.- Investigation of mechanical stress-induced double stacking faults in (11-20) highly n-doped 4H-SiC combining optical microscopy TEM contrast simulation and dislocation core reconstruction.- Mat. Sci. Forum,- vol. 527-529, p. 379-82, 2006

El Bouayadi R., Regula G., Lancin M., Pichaud B.,Desvignes M.- Influence of metal trapping on the shape of cavities induced by high energy He+ implantation.- Journal of Applied Physics,- vol. 99, p. 43509, 2006

Texier M., Regula G., Lancin M., Pichaud B.- LACBED study of extended defects in 4H-SiC.- Philosophical Magazine Letters,- vol. 86, n° 9, p. 529, 2006

Dumont M, Coulet M V, Regula G, Bley F.- Characterization of nanocavities in silicon using small angle X ray scattering.- Mater. Res. Soc. Symp.,- vol. 994,  p.119 124, 2007

Idrissi H., Regula G., Lancin M., Pichaud B.- 30° Si(g) partial dislocation mobility in 4H-SiC doped with Nitrogen.- Journal of Applied Physics,- vol. 101, n° 11, p. 113533.1-113533.5, 2007



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