Antoine Ronda
IM2NP
Faculté des Sciences et Techniques
Campus de Saint Jérôme - Case 142
Avenue Escadrille Normandie Niemen
13397 Marseille Cedex 20
téléphone : + 33 (0) 4 91 28 91 62
mail : antoine.ronda _AT_ im2np.fr

Ingénieur de recherche CNRS



Domaine d’activité :

Couches minces ; épitaxie ; analyses de surface


Publications récentes :  

Portavoce A., Volpi F., Ronda A., Gas P., Berbezier I.- Sb segregation in Si and SiGe : effect on the growth of self-organised Ge dots.- Thin Solid Films,- vol. 380, p. 164-168, 2000

Volpi F., Portavoce A., Ronda A., Shi Y., Gay J.M., Berbezier I.- Nucleation and evolution of SiGe islands on Si(001).- Thin Solid Films,- vol. 380, p. 46-, 2000

Berbezier I., Ronda A., Portavoce A.- SiGe nanostructures : new insights into growth processes.- Journal of Physics - Condensed Matter,- vol. 14, n° 35, p. 8283-8331, 2002

Portavoce A., Bassani F., Ronda A., Berbezier I.- Auger spectroscopy thermodesorption of Sb on SiGe layers grown on Si(100) substrates.- Surface Science,- vol. 519, p. 185-,  2002 

Portavoce A., Ronda A., Berbezier I.- Sb surfactant mediated growth of Ge nanostructures.- Material Science and Engineering B,- vol. 89, p. 205-, 2002

Berbezier I., A. Ronda,  A. Portavoce, Motta N.- Ge dots self-assembling : surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities.- Applied Physics Letters,- vol. 83, p. 4833-, 2003 

Berbezier I., Ronda A., Volpi F., Portavoce A.- Morphological evolution of SiGe layers.- Surface Science,- vol. 531, p. 231-, 2003

Lim Y.S. , F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, Berbezier I.- The effect of Sb on the oxidation of Ge quantum dots.- Material Science and Engineering B,- vol. 101, p. 190-, 2003

Portavoce A., Berbezier I., Ronda A.- Effects of Sb on Si/Si and Ge/Si growth process.- Materials Science and Engineering B,- vol. 101, n° 1-3, p. 181-185, 2003

Ronda A., I. Berbezier, A. Pascale, A. Portavoce, Volpi F.- Experimental insights into Si and SiGe growth instabilities : influence of kinetic growth parameters and substrate orientation.- Material Science and Engineering B,- vol. 101, p. 95-, 2003

Volpi F., A.R. Peaker, I.D. Hawkins, A. Portavoce, A. Ronda, Berbezier I.- Hole trapping in self-assembled SiGe quantum dots.- Material Science and Engineering B,- vol. 101, p. 338, 2003

Karmous A., A. Cuenat, A. Ronda, I. Berbezier , S. Atha, R. Hull.- Ge dot organization on Si substrates patterned by focused ion beam.- Applied Physics Letters,- vol. 85, p. 6401-6403, 2004

Portavoce A., Berbezier I., Gas P., Ronda A.- Sb-surface segregation during epitaxial growth of SiGe heterostructures : the effects of Ge composition and biaxial stress.- Physical Review B,- vol. 69, n° 15, p. 155414, 2004          

Portavoce A., Berbezier I., Ronda A.- Sb-surfactant-mediated growth of Si and Ge nanostructures.- Physical Review B,- vol. 69, p. 155416, 2004

Portavoce A., Gas P., Berbezier I., Ronda A, Christensen J.S., Yu. Kuznztsov A., Svensson B.G.- Sb lattice diffusion in Si  l-xGex /Si(100) heterostructures :  chemical and stress effects.- Physical Review B,- vol. 69, p. 155415, 2004

Portavoce A., Gas P., Berbezier I., Ronda A., Christensen J.S., Svensson B.- Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy : Effect of Ge concentration and biaxial stress.- Journal of Applied Physics,- vol. 96, n°6, p. 3158-3163, 2004

Ronda A., Berbezier I.- Self-patterned Si surfaces as templates for Ge islands ordering.- Physica E : Low-dimensional Systems and Nanostructures,- vol. 23, n° 3-4, p. 370-376, 2004

Rowell N.L, D.C. Houghton, I. Berbezier, A. Ronda, D. Webb, Ward M.- Dopant layer abruptness in strained Si1-xGex heterostructures.- Journal of Vacuum Science and Technology A,- vol. 22, n° 3, p. 939-942, 2004

Volpi F., A R Peaker, I Berbezier and Ronda A.- Electrically active defects  induced by sputtering deposition on silicon : the role of hydrogen.- Journal of Applied Physics,- vol. 95, p. 4752-, 2004

Berbezier I., A. Karmous, A. Ronda, T. Stoica, L. Vescan, G. Remco, A. Olzierski, E. Tsoi, A. Nassiopoulou.- Two-dimensional arrays of ordered, highly dense and ultra-small Ge nanocrystals on thin SiO2 layers.- Journal of Physics : Conference Series,-  vol. 10, p. 73-76, 2005

Berbezier I., Descoins M., Ismail B., Maaref H., Ronda A.- Influence of Si(001) substrate misorientation on morphological and optical properties of Ge quantum dots.- Journal of Applied Physics,- vol. 98, n° 6, p. 063517, 2005

Ismail B., M. Descoins, A. Ronda, F. Bassani, G. Bremond, H. Maaref, Berbezier I.- Effect of self-patterned Si1-xGex template layer on the structural and optical properties of Ge dots.- Journal of Vacuum Science and Technology B,- vol. 23, n° 1, p. 242-246, 2005

Ayoub J.-P., Favre L., Ronda A., Berbezier I., De Padova P., Olivier B.- Structural and magnetic properties of GeMn diluted magnetic semiconductor.- Materials Science in Semiconductor Processing,- vol. 9, n° 4-5 , p. 832-835, 2006

Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M.- Formation and ordering of Ge nanodots on SiO2.- Materials Science in Semiconductor Processing,- vol. 9, p. 812, 2006

Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M.- Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films.- Applied Physics Letters,- vol. 89, p. 063122, 2006

Karmous A. Berbezier I., Ronda A.- Formation and ordering of Ge nanocrystals on SiO2.- Physical Review B,- vol. 73, n° 7, p. 075323, 2006

Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I.- Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys.- Materials Science in Semiconductor Processing,- vol. 9, p. 836, 2006

Pascale A., Berbezier I., Ronda A., Videcoq A., Pimpinelli A.- Kinetic modeling of Si growth instabilities.- Applied Physics Letters,- vol. 89, p. 104108, 2006

Portavoce A., Berbezier I., Ronda A., Gas P., Christensen J.S., Kuznetsov A.Yu., Svensson B.G.- Dopant diffusion in Si1-xGex thin films : Effect of epitaxial stress.- Defect and Diffusion Forum,- vol. 249, p. 135, 2006

Ayoub J.-P., Favre L., Berbezier I., Ronda A., Morresi L., Pinto N.- Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films.- Applied Physics Letters,- vol. 91 , n° 14, p. 141920, 2007

Berbezier I. , Ronda A.- Self-assembling of Ge dots on nanopatterns : experimental investigation of their formation, evolution and control.- Physical Review B,- vol. 75, p. 195407, 2007

Gacem K., El Hdiy A., Troyon M., Berbezier I., Szkutnik P.D., Karmous A., Ronda A.- Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide.- Journal of Applied Physics,- vol. 102, p. 093704, 2007

Karmous A., Berbezier I. , Ronda A., Hull R., Graham J.- Ordering of Ge nanocrystals using FIB nanolithography.- Surface Science,- vol. 601, p. 2769, 2007

Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I., D'Orazio F., Lucari F.- Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C.- Surface Science,- vol. 601, p. 2632, 2007

Scarselli M., Masala S., Castrucci P., De Crescenzi M., Gatto E., Venanzi M., Karmous A., Szkutnik P.D., Ronda A., Berbezier I.- Optoelectronic properties in quantum-confined germanium dots.- Applied Physics Letters,- vol. 91, p. 141117, 2007

Szkutnik P.D., Sgarlata A., Balzarotti A., Motta N., Ronda A.,  Berbezier I.- Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along [110].- Physical Review B,- vol. 75, p. 033305, 2007

El Hdiy A., Gacem K., Troyon M., Ronda A., Bassani F., Berbezier I.- Germanium nanocrystal density and size effects on carrier storage and emission.- Journal of Applied Physics,- vol. 104, p. 063716, 2008

Pascale A., Berbezier I., Ronda A., Kelires P.- Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001).- Physical Review B,- vol. 77, p. 075311, 2008

Szkutnik P.D., Karmous A., Bassani F., Ronda A., Berbezier I., Gacem K., El Hdiy A., Troyon M.- Ge nanocrystals formation on SiO2 by dewetting : application to memory.- The European Physical Journal : Applied Physics,- vol. 41 , p.103-106, 2008

De Crescenzi M., Scarselli M., Sgarlata A., Masala S., Castrucci P., Gatto E., Venanzi M., Karmous A., Ronda A., Szkutnik P.D., Berbezier I.- Photocurrent generation from Ge nanodots in the near UV and visible region.- Superlattices and Microstructures, acceptée, 2009

Rowell N.L., Lockwood D.J., Karmous A., Szkutnik P.D., Berbezier I., Ronda A.- Photoluminescence of Ge nanocrystals self-assembled on SiO2.- Superlattices and Microstructures, acceptée, 2009


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