 | Olivier Thomas |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 86 72 |
| | Olivier Thomas |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 262 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 86 72 |
Professeur, Université d'Aix-Marseille
Domaines d'activité :
Propriétés mécaniques des objets de petites dimensions (métaux, semi-conducteurs) :Publications récentes dans des revues avec comité de lecture
Cauro R., Papiernik R., Gilabert A., Girault Y., Grenet J.C., Medici M.G., Thomas P., Muller C. Photoconductivity in oxygen deficient La0.7Pbx_0.3-xMnO3-d manganites thin films prepared by chemical route. Journal of Superconductivity : Incorporating Novel Magnetism, vol. 14, n° 2, p. 235-, 2001
Bigault T., Bocquet F., Labat S., Thomas O., Renevier H. Chemically diffuse interface in, 111Au-Ni multilayers: an anomalous X-Ray diffraction analysis. Appl. Surf. Science, 188, 110-114, 2002
Chocyk D., Proszynki A., Gladyszewski G., Labat S., Gergaud P., Thomas O. Stresses in multilayered systems: test of the sin2y method. Adv. Eng. Materials, 4, 557, 2002
Chocyk D., Proszynsky A., Gladyszevski G. , Labat S., Gergaud P., Thomas O. Determination of stress in Au/Ni multilayers by symmetric and asymmetric X-ray diffraction. Optica Applicata, 32, 333-337, 2002
Labat S., Guichet C., Thomas O., Gilles B., Marty A. Microstructural analysis of Au/Ni multilayers RDI by SAXS and STM. Applied Surface Science, 188, n° 1-2, 182-7, 2002
Parmentier R., Lemarchand F., Cathelino M., Lesquine M., Amra C., Labat S., Bozzo S., Bocquet F., Charai A., Thomas O. Piezoelectric tantalum pentoxide studied for optical tunable application. Applied Optics, 41, 3270-3276, 2002
Rivero C., Bostrom O., Gergaud P., Thomas O., Boivin P., Mazuelas A. In situ study of strain evolution during thin film Ti/Al , Si,Cureaction using synchrotron radiation. Microelectronic Engineering, 64, 81, 2002
Thomas O., Müller P., Labat S., Gergaud P. Influence of segregation on the measurement of stress in thin films. J. Appl. Phys., 91, 2951, 2002
Bocquet F., Gergaud P. and Thomas O. X-ray diffraction from inhomogeneous thin films of nanometre thickness : modelling and experiment. J. Appl. Cryst., 36 , 154, 2003
Chenevier B., Chaix- Pluchery O., Gergaud P., Thomas O., LaVia F. Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films,. J. Appl. Phys., 94 , 7083, 2003
Chenevier B., Chaix-Pluchery O., Gergaud P., Thomas O., Madar R., LaVia F. First stages of silicidation in Ti/Si thin films. Microelectronic Engineering, 70 , 455, 2003
Ersen O., Tuilier M-H., Thomas O., Gergaud P., Lagarde P. Cubic local order around Al and intermixing in short period AlN/TiN multilayers studied by Al K-edge extended x-ray absorption fine structure spectroscopy and x-ray diffraction. Appl. Phys. Letters, 82, 3659, 2003
Gergaud P., Megdiche M., Thomas O., Chenevier B. Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction. App.Phys. Lett., 83, 1334, 2003
Gergaud P., Thomas O., Chenevier B. Stresses arising from a solid state reaction between palladium films and Si(001 investigated by in situ combined X-ray diffraction and curvature measurements. J. Appl. Phys., 94, 1584, 2003
Kaouache B., Gergaud P., Thomas O., Bostrom O., Legros M. Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al 0.5%Cu 1%Si thin films. Microelectronic Engineering, 70 , 447, 2003
Loubens A., Fortunier R., Fillit R., Thomas O. Simulation of local mechanical stresses in lines on substrate. Microelectronic Engineering, 70, 455, 2003
Megdiche M., Gergaud P., Curtil C., Thomas O., Chenevier B., Mazuelas A. In situ study of stress evolution during solid state reaction of Pd with Si, 001 using synchrotron radiation. Microelectronic Engineering, 70, 436, 2003
Thomas O., Shen Q., Schieffer P., Tournerie N., Lepine B. Interplay between anisotropic strain relaxation and uniaxial interface magnetic anisotropy in epitaxial Fe films on, 001 GaAs. Phys. Rev. Lett., 90, 017205, 2003
Bocquet F., Bigault T., Alfonso C., Labat S., Thomas O., Charai A. In situ stress measurements during the growth at different temperatures of Ag-Cu, 111 multilayers. J. Appl. Phys., 95, 1152-61, 2004
Gergaud P., Rivero C., Gailhanou M., Thomas O., Froment B. , Jaouen H. Exploring Ni-Si thin-film reactions by means of simultaneous synchrotron. X-ray diffraction and substrate curvature measurements. Mat. Sci. and Engin. B, 114-15, 67-71, 2004
Labat S., Bocquet F. , Gilles B., Thomas O. Stresses and interfacial structure in Au-Ni and Ag-Cu metallic multilayers. Scripta-Materialia, 50 , 717-21, 2004
Rivero C., Gergaud P., Thomas O., Froment B., Jaouen H. In situ study of stress evolution during the reaction of a nickel film with a silicon substrate. Microelectronic Engineer., 76, 318−323, 2004
Chérault N., Carlotti G., Casanova N., Gergaud P., Goldberg C., Thomas O., Verdier M. Mechanical characterization of low−k and barrier dielectric thin films. Microelectronic Engineering, 82, 368, 2005
Legros M., Kaouache B., Gergaud P., Thomas O., Dehm G., Balk T. J., Arzt E. Pipe-Diffusion ripening of Si precipitates in Al-0.5% Cu-1%Si thin films. Phil. Mag. A, 85, 3541-3552, 2005
Rivero C., Gergaud P., Gailhanou M., Boivin P., Fornara P., Niel S., Thomas O. Stress developement and relaxation during reaction of a cobalt film with a silicon substrate. Defect and Diffusion Forum, 237-240, 518-523, 2005
Rivero C., Gergaud P., Gailhanou M., Thomas O., Froment B., Jaouen H., Carron V. Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni-Si reactive film formation. Appl. Phys. Letters 87, 48-50, 2005
Thomas O., Gergaud P., Rivero C., d’Heurle F. Stress development during the reactive formation of silicide films. Defect and Diffusion Forum, 237-240, 801-812, 2005
Cacho F., G. Cailletaud, C. Rivero, P. Gergaud, O. Thomas, H. Jaouen. Numerical modeling of stress build up during nickel silicidation under anisothermal annealing. Materials Science and Engineering B, vol. 135, p. 95, 2006
Gergaud P., Goudeau P., Sicardy O., Tamura N., Thomas O. Residual stress analysis in micro- and nao-structures materials by X-ray diffraction. International Journal of Materials and Product Technology, vol. 26, p. 3-4, 2006
Ney D., Federspiel X., Thomas O., Gergaud P. Stress induced electromigration backflow effect in copper interconnects. IEEE Transactions on Device and Materials Reliability, vol. 6, p. 175 2006
Ney D., X. Federspiel, O. Thomas, P. Gergaud. Stress induced electromigration backflow effect in copper interconnects. IEEE Transactions on Device & Materials Reliability, vol. 6, p. 175, 2006
Thomas O., A. Loubens, P. Gergaud, Labat S. X-ray scattering: a powerful probe of lattice strains in materials with small dimensions. Applied Surface Science, vol. 253, p. 182, 2006
Benoudia M.C., Roussel J.M., Labat S., Thomas O., Beke D.L., Langer G., Kis-Varga M. Investigating interdiffusion in Mo/V multilayers from x-ray scattering and kinetic simulations. Defect and Diffusion Data, vol. 264, p. 13, 2007
Eberlein M., Escoubas S., Gailhanou M., Thomas O.,Micha J.-S., Rohr P., Coppard R. Investigation by high-resolution X-ray diffraction of the local strains induced in Si by periodic arrays of oxide filled trenches. Physica Status Solidi (a), vol. 8, p. 2542-2547, 2007
Gailhanou M., Loubens A., Micha J.-S., Charlet B., Minkevich A.A., Fortunier R., Thomas O. Strain field in silicon on insulator lines using high resolution x-ray diffraction. Applied Physics Letters, vol. 90, p. 111914, 2007
Labat S., Chamard V., Thomas O. Local strain in a 3D nanocrystal revealed by 2D coherent X-ray diffraction imaging. Thin Solid Films, vol. 515, p. 5557, 2007
Minkevich A.A., Gailhanou M., Micha J.-S., Charlet B., Chamard V., Thomas O. Inversion of the diffraction pattern from an inhomogeneously strained crystal using an iterative algorithm. Physical Review B, vol 76, p104106, 2007
Eberlein M., Escoubas S., Gailhanou M., Thomas O., Rohr P., Coppard R. Influence of crystallographic orientation on local strains in silicon: a combined high-resolution X-ray diffraction and finite element modeling investigation. Thin Solid Films, vol.516, p. 8042–8048, 2008
Escoubas S., H. Brillet, T. Mesarotti, G. Raymond, O. Thomas and P. Morin. Local strains induced in silicon channel by a periodic array of nitride capped poly lines investigated by High-Resolution X-Ray Diffraction. Material Science and Engineering B, vol. 154-155, p. 129-132, 2008
Imbert B., M. Gregoire, S. Zoll, R. Beneyton, S. Del-Medico, C. Trouiller, O. Thomas. Nitrogen impurity effects on nickel silicide formation at low temperatures – New “nitrogen co-plasma” approach. Microelectronic Engineering, vol. 85, p. 2005-2008, 2008
Imbert B., S. Zoll, P. Garnier, B. Pernet, D. Galpin, R. Beneyton, M. Juhel, P. Mur, V. Carron, O. Thomas. Self-aligned nickel-platinum silicide oxidation. Material Science and Engineering B, vol. 154-155, p.155-158, 2008
Kaouache B., S. Labat, O. Thomas, S. Maitrejean, V. Carrreau. Texture and strain in narrow copper damascene interconnect lines: an x-ray diffraction analysis. Microelectronic Engineering, vol. 85, p. 2175-2178, 2008
Minkevich A., T. Baumbach, M. Gailhanou, O. Thomas. Applicability of an iterative inversion algorithm to the diffraction pattern from inhomogeneously strained crystals. Physical Review B, vol. 78, p. 174110, 2008
Thomas O. Diffraction analysis of elastic strains in micro and nano-structures. Z. Kristallogr., vol. 223, p. 569-574, 2008
Escoubas S., Mesarotti T., Thomas O., Brillet H., Raymond G., Morin P. Local strains induced in silicon channel by a periodic array of nitride capped poly lines investigated by high-resolution X-ray diffraction. Materials Science & Engineering B, acceptée, 2009
Edition
Proceedings of the European Workshop on Materials for Advanced Metallization 2003, O. Thomas, H. Dallaporta, P. Gas (eds).- Microelectronic Engineering 70 (2003), Elsevier
