Bécu S., Crémer S., Autran J.L. Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model. Microelectronic Engineering, vol. 83, no. 11-12, p. 2422-2426, 2006

Bécu S., S. Crémer, J.L. Autran. Microscopic model for dielectric constant in metal-insulator-metal capacitors with high permittivity metallic oxides. Applied Physics Letters, vol. 88, p. 052902-1, 2006

Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio. Analysis of 45nm multi-gate transistors behavior under heavy ion irradiation by 3D device simulation. IEEE Transactions on Nuclear Science, vol. 53, n° 6, p. 3265-3270, 2006 http://dx.doi.org/10.1109/TNS.2006.886205

Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio. Investigation of 30nm gate-all-around MOSFET sensitivity to heavy ions: a 3-D simulation study. IEEE Transactions on Nuclear Science, vol. 53, n° 4, p. 1950-1958, 2006 http://dx.doi.org/10.1109/TNS.2006.880945

Huard V., Denais M., Parthasarathy C. NBTI degradation: From physical mechanisms to modelling. Microelectronics Reliability, vol. 46, n° 1, p. 1-23, 2006

Munteanu D., Ferlet-Cavrois V., Autran J.L., Paillet P., Baggio J., Faynot O., Jahan C., Tosti L. Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation. IEEE Transactions on Nuclear Science, vol. 53, no. 6, p. 3363-3371, 2006

Munteanu D., J.L. Autran, X. Loussier, S. Harrison, R. Cerutti, T. Skotnicki. Quantum short-channel compact modeling of drain-current in double-gate MOSFET. Solid State Electronics, vol. 50, n° 4, p. 680-686, 2006

Nehari K., Cavassilas N., Autran J.L., Bescond M., Munteanu D., Lannoo M. Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET’s : an atomistic study. Solid State Electronics, vol. 50, n°4, p. 680-686, 2006

Parthasarathy C.R., Denais M., Huard V., Ribes G., Roy D., Guerin C., Perrier F., Vincent E., Bravaix A. Designing in reliability in advanced CMOS technologies. Microelectronics Reliability, vol. 46, n° 9-11, p. 1464-1471, 2006

Autran J.L. and Munteanu D. Au-delà du transistor MOS sur silicium massif : Nouveaux matériaux, architectures innovantes et dispositifs ultimes. Revue d'Electricité et de l'Electronique, n° 4, p. 25-37, 2007

Autran J.L., Roche P., Borel J., Sudre C., Castellani-Coulié K., Munteanu D., Parrassin T.,  Gasiot G., Schoellkopf J.P. Altitude SEE Test European Platform (ASTEP): project overview, first results in CMOS 130 nm and perspectives. IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 1002-1009, 2007 http://dx.doi.org/10.1109/TNS.2007.891398

Barral V., Poiroux T., Vinet M., Widiez J., Previtali B., Grosgeorges P., Le Carval G., Barraud S., Autran J.L., Munteanu D., Deleonibus S. Experimental determination of the channel backscattering coefficient on 10 to 70 nm- metal-gate double-gate transistors. Solid State Electronics, vol. 51, n° 4, p. 537–542, 2007

Bescond M., Cavassilas N., Lannoo M. Effective-mass approach for n-type semiconductor Nanowire MOSFETs arbitrarily oriented. Nanotechnology, vol. 18, p. 255201, 2007

Bescond M., Cavassilas N., Nehari K., Lannoo M. Tight-binding calculations of Ge-nanowire bandstructures. Journal of Computational Electronics, vol. 6, p. 341, 2007

Goguenheim D., Pic D., Ogier J.L. Oxide reliability below 3nm for advanced CMOS : issues, characterization and solutions. Microelectronics Reliability, vol. 47, p. 1373-1377, 2007

Guérin C., Huard V., Bravaix A. Hot-carrier damage from high to low voltage using the energy-driven framework. Microelectronic Engineering, vol. 84, n° 9-10, p. 1938-1942, 2007

Guérin C., Huard V., Bravaix A. The Energy Driven Hot-Carrier Degradation Modes in NMOSFETs. IEEE Transactions on Device and Materials Reliability, vol. 7, n° 2, p. 225-235, 2007

Huard V., Parthasarathy C.R., Bravaix A., Hugel T., Guérin C., Vincent E. Design-in reliability approach for NBTI and Hot-Carriers degradation in advanced nodes (invited paper). IEEE Transactions on Device and Materials Reliability, vol. 7, n° 4, p. 558-570, 2007

Lachenal D., Bravaix A., Monsieur F., Rey-Tauriac Y. Degradation mechanism understanding of NLDEMOS SOI in RF applications. Microelectronics Reliability, vol. 47, n° 9-11, p. 1634-1638, 2007

Lachenal D., Monsieur F., Rey-Tauriac Y., Bravaix A. HCI degradation model based on the diffusion equation including the MVHR model. Microelectronic Engineering, vol. 84, n° 9-10, p. 1921-1924, 2007

Leifer K., Pelucchi E., Watanabe S., Michelini F., Dwir B., Kapon E. Narrow (approximate to 4 meV) inhomogeneous broadening and its correlation with confinement potential of pyramidal quantum dot arrays. Applied Physics Letters, vol. 91, n° 8, p. 081106, 2007

Loussier X., Munteanu D., Autran J.L. Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits. Journal of Non-Crystalline Solids, vol. 353, p. 639–644, 2007

Munteanu D., Autran J-L., Ferlet-Cavrois V., Paillet P., Baggio J., Castellani-Coulié K. 3D quantum numerical simulation of single-event transient in multiple-gate nanowire MOSFETs. IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 994-1001, 2007 http://dx.doi.org/10.1109/TNS.2007.892284

Munteanu D., J.L. Autran, X. Loussier, S. Harrison, R. Cerutti. Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects. Molecular Simulation, vol. 33, n° 7, p. 605-611, 2007

Nehari K., Cavassilas N., Michelini F., Bescond M., Autran JL., Lannoo M. Full-band study of current across silicon nanowire transistors. Applied Physics Letters, vol. 90, p. 132112, 2007

Obreschkow D., Michelini F., Dalessi S., Kapon E., Dupertuis M.-A. Nonorthogonal theory of polarons and application to pyramidal quantum dots. Physical Review B, vol. 76, n° 3, p. 035329, 2007

Parthasarathy C.R., Bravaix A., Guérin C., Denais M., Huard V. Design-in Reliability for 90-65nm CMOS nodes submitted to hot-carriers and NBTI degradation. Lecture Notes in Computer Science (LNCS), vol. 46, p. 191-200, 2007

Parthasarathy C.R., Denais M., Huard V., Ribes G., Vincent E., Bravaix A. New insights into recovery characteristics during PMOS NBTI and CHC degradation. IEEE Transactions on Device and Materials Reliability, vol. 7, n° 1, p. 130-137, 2007

Pic D., Ogier J.L., Goguenheim D. A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectronics Reliability, vol. 47, p. 1322-1329, 2007

Serdouk S., Hayn R. , Autran J.-L. Theory of spin dependent tunnelling current in ferromagnetic metal-oxide-silicon structures. Journal of Applied Physics, vol. 102, p. 113707, 2007

Autran J.L. and Munteanu D. Simulation of electron transport in nanoscale independent-gate double-gate devices using a full 2D Green’s function approach. Journal of Computational and Theoretical Nanoscience, vol. 5, p. 1120–1127, 2008 http://dx.doi.org/10.1166/jctn.2008.010

Buran C., Pala M.G., Bescond M., Mouis M. Full-three dimensional quantum simulation approach for surface-roughness-limited mobility in SNWT. Journal of Computational Electronics, vol. 7, p. 328, 2008

Courtade L., Turquat Ch., Muller Ch., Lisoni J.G., Goux L., Wouters D.J., Goguenheim D., Roussel P., Ortega L. Oxidation kinetics of Ni metallic film: formation of NiO-based resistive switching structures. Thin Solid Films, vol. 516, n° 12, p. 4083-4092, 2008 http://dx.doi.org/10.1016/j.tsf.2007.09.050

Giot D., Roche P., Gasiot G., Autran J.L, Harboe-Sørensen R. Heavy ion testing and 3D simulations of multiple cell upset in 65nm standard SRAMs. IEEE Transactions on Nuclear Science, vol. 55, n° 4, p. 2048-2054, 2008 http://dx.doi.org/10.1109/TNS.2008.916063

Loussier X., Munteanu D., Autran J.L., Tintori O. Impact of geometrical and electrical parameters on speed performances in ultimate double-gate metal-oxide-semiconductor field-effect transistor. Japanese Journal of Applied Physics, vol. 47, n° 5, p. 3390-3395, 2008 http://dx.doi.org/10.1143/JJAP.47.3390

Martinez A., Bescond M., Brouwn A.R., Barker J.R., Asenov A. A full 3D non-equilibrium green functions study of a stray charge in a nanowire MOS transistor. Journal of Computational Electronics, vol. 7, p. 359, 2008 http://dx.doi.org/10.1007/s10825-008-0240-4

Martinie S., Le Carval G., Munteanu D., Autran J.L. New unified analytical model of backscattering coefficient from low to high field conditions in quasi-ballistic transport . IEEE Electron Device Letters, vol. 29, N°12, p. 1392-1394, 2008 http://dx.doi.org/10.1109/LED.2008.2007305

Martinie S., Le Carval G., Munteanu D., Soliveres S., Autran J.L. Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits. IEEE Transactions on Electron Devices, vol. 55, no. 9, p. 2443-2453, 2008 http://dx.doi.org/10.1109/TED.2008.927656

Moreau M., Munteanu D. and Autran J.L. Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics, vol. 47, no. 9, p. 7013-7018, 2008 http://dx.doi.org/10.1143/JJAP.47.7013

Munteanu D. and Autran J.L. Modeling and simulation of single-event effects in digital devices and Ics. IEEE Transactions on Nuclear Science, vol. 55, no. 4, p. 1854-1878, 2008 http://dx.doi.org/10.1109/TNS.2008.2000957

Nehari, K., Lannoo, M., Michelini, F., Cavassilas, N., Bescond, M., Autran, J. L. Improved effective mass theory for silicon nanostructures. Applied Physics Letters, vol. 93, no 9, p. 092103, 2008 http://dx.doi.org/10.1063/1.2978196

Pelletier B., Juhel M., Trouiller C., Beucher D., Autran J.L., Morin P. Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties. Materials Science and Engineering B – Advanced Functional Solid-State Materials, vol. 154, p. 252-255, 2008 http://dx.doi.org/10.1016/j.mseb.2008.09.025

Pic D., Ogier J.L., Goguenheim D. Assessment of temperature and voltage accelerating factors for 2.3–3.2 nm SiO2 thin oxides stressed to hard breakdown. Microelectronics Reliability, vol. 48, n° 3, p. 335-341, 2008 http://dx.doi.org/10.1016/j.microrel.2007.08.006

Pic D., Regnier A., Pean V., Ogier J.L., Goguenheim D. Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectronics Reliability, vol. 48 (8-9), p. 1318-1321, 2008 http://dx.doi.org/10.1016/j.microrel.2008.07.050

Rogdakis K., Lee S.-Y., Bescond M., Lee S.-K., Bano E., Zekentes K. 3C-Silicon Carbide nanowire FET: An experimental and theoretical approach. IEEE Transactions on Electron Devices, vol. 55, n° 8, p.1970-1976, 2008 http://dx.doi.org/10.1109/TED.2008.926667

Autran J.L., Roche P., Sauze S., Gasiot G., Munteanu D., Loaiza P., Zampaolo M., Borel J. Altitude and Underground Real-Time SER Characterization of CMOS 65nm SRAM. IEEE Transactions on Nuclear Science, Vol. 56, 2009, Vol. 56, N°4, p. 2258-2266. http://dx.doi.org/10.1109/TNS.2009.2012426

Barral V., Poiroux T., Barraud S., Bonno O., Andrieu F., Faynot O., Munteanu D., Autran J.L. and Deleonibus S. Evidences on the physical origin of the unexpected transport degradation in ultimate n-FDSOI devices. IEEE Transactions on Nanotechnology, vol. 8, n° 2, p. 167-173, 2009 http://dx.doi.org/10.1109/TNANO.2008.2010128

Barral V., Poiroux T., Bournel A., Munteanu D., Autran J.L. and Deleonibus S. Experimental investigation on the quasi-ballistic transport: part I- Determination of a new backscattering coefficient extraction methodology. IEEE Transactions on Electron Devices, vol. 56, n° 3, p. 408-419, 2009 http://dx.doi.org/10.1109/TED.2008.2011681

Barral V., Poiroux T., Munteanu D., Autran J.L. and Deleonibus S. Experimental investigation on the quasi-ballistic transport: Part II- Backscattering coefficient extraction and link with the mobility. IEEE Transactions on Electron Devices, vol. 56, n° 3, p. 420-430, 2009 http://dx.doi.org/10.1109/TED.2008.2011682

Benard C., Math G., Fornara P., Ogier J.L., Goguenheim D. Influence of various process steps on the reliability of PMOSFETs submitted to Negative Bias Temperature Instabilities. Microelectronics Reliability, 2009, Vol. 49(9-11), p. 1008–1012. http://dx.doi.org/10.1016/j.microrel.2009.06.022

Bescond M., C. Li, M. Lannoo. Nanowire transistor modeling: influence of ionized impurity and correlation effects. Journal of Computational Electronics, vol. 8, 382, 2009, Invited paper http://dx.doi.org/10.1007/s10825-009-0279-x

Bescond M., Lannoo M., Raymond L., Michelini F. Theoretical study of ionized impurities in silicon nanowire MOS transistors. Solid State Phenomena,  vol.156-158, p. 511., 2009 http://dx.doi.org/10.4028/www.scientific.net/SSP.156-158.511

Bescond M., M. Lannoo, F. Michelini, L. Raymond, M.G. Pala. 3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity. Microelectronics Journal, vol.  40, 756, 2009 http://dx.doi.org/10.1016/j.mejo.2008.11.009

Buran C., M. G. Pala, M. Bescond, M. Dubois, and M. Mouis. Three dimensional real space simulation of surface roughness in silicon nanowire FETs. IEEE Transactions on Electron Devices, vol. 56, 2186, 2009 http://dx.doi.org/10.1109/TED.2009.2028382

Guerin C., Huard V., Bravaix A. General Framework about defect creation at the Si/SiO2 interface. Journal of Applied Physics, 2009, Vol. 105(11), p. 114513-114524 http://dx.doi.org/10.1063/1.3133096

Li C., M. Bescond and M. Lannoo. A GW investigation of interface induced correlation effects on transport properties in realistic nanoscale structures. Physical Review B, vol. 80, 195318, 2009 http://dx.doi.org/10.1103/PhysRevB.80.195318

Loussier X., Munteanu D., Autran J.L. Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics. Journal of Non-Crystalline Solids, 2009, Volume 355, N°18-21, p. 1185-1188. http://dx.doi.org/10.1016/j.jnoncrysol.2009.02.011

Martinie S., Munteanu D., Le Carval G., Autran J.L. Analytical modeling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects. Molecular Simulation, 2009, Vol. 35, N°8, p. 631-637. http://dx.doi.org/10.1080/08927020902769836

Martinie S., Munteanu D., Le Carval G., Autran J.L. Physics-based analytical modeling of quasi-ballistic transport in Double-Gate MOSFETs: from device to circuit operation. IEEE Transactions on Electron Devices, 2009, vol. 56, no. 11, p. 2692-2702. http://dx.doi.org/10.1109/TED.2009.2030540

Moliere F., Foucher B., Perdu P., Bravaix A. Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics, Microelectronics Reliability, 2009, Vol. 49(9-11), p. 1381–1385. http://dx.doi.org/10.1016/j.microrel.2009.07.001

Moreau M., Munteanu D., Autran J.L. Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-k Dielectric Stack using the Non-equilibrium Green’s Function Formalism. Japanese Journal of Applied Physics, 2009, vol. 48, 111409: 1-8. http://dx.doi.org/10.1143/JJAP.48.111409

Moreau M., Munteanu D., Autran J.L., Bellenger F., Mitard J., Houssa M. Investigation of capacitance–voltage characteristics in Ge /high-κ MOS devices. Journal of Non-Crystalline Solids, 2009, Volume 355, N°18-21, p. 1171-1175. http://dx.doi.org/10.1016/j.jnoncrysol.2009.01.056

Munteanu D., Autran J.L. 3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates. IEEE Transactions on Nuclear Science, 2009, Volume 56, N°4, p. 2083-2090. http://dx.doi.org/10.1109/TNS.2009.2016343

Munteanu D., Autran J.L. Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study. IEEE Transactions on Nuclear Science, 2009, Volume 56, N°4, p. 2042-2049. http://dx.doi.org/10.1109/TNS.2009.2016564

Munteanu D., Autran J.L., Moreau M., Houssa M. Electron transport through high-κ dielectric barriers: A non-equilibrium Green’s function (NEGF) study. Journal of Non-Crystalline Solids, 2009, Volume 355, N°18-21, p. 1180-1184. http://dx.doi.org/10.1016/j.jnoncrysol.2009.03.006

Munteanu D., Moreau M., Autran J.L. A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs. Molecular Simulation, 2009, Vol. 35, N°8, p. 491-497. http://dx.doi.org/10.1080/08927020902801548

Pons N., N. Cavassilas, F. Michelini, L. Raymond and M. Bescond. New shaped nanowire MOSFETs with enhanced current characteristics based on three-dimensional modeling. Journal of Applied Physics, vol. 106, 053711, 2009 http://dx.doi.org/10.1063/1.3204550

Bravaix A., Huard V., Guerin C. Down-Scaling Hot-Carrier Degradation Issues to the Ultimate Silicon Bulk CMOS nodes. J. Phys. D: Applied Phys., in press.

Michelini F., Cavassilas N., Hayn R., Szczap M. Multiband k.p models for strained zincblende cristals: Application to the fine structure of ZnO. Physical Review B, accepted.