Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio. Analysis of 45nm multi-gate transistors behavior under heavy ion irradiation by 3D device simulation. IEEE Transactions on Nuclear Science, vol. 53, n° 6, p. 3265-3270, 2006 http://dx.doi.org/10.1109/TNS.2006.886205

Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio. Investigation of 30nm gate-all-around MOSFET sensitivity to heavy ions: a 3-D simulation study. IEEE Transactions on Nuclear Science, vol. 53, n° 4, p. 1950-1958, 2006 http://dx.doi.org/10.1109/TNS.2006.880945

Condorelli G.G., Favazza M., Bedoya C., Baeri A., Anastasi G., Lo Nigro R., Menou N., Muller C., Lisoni J., Wouters D.J., Fragalà I.L. Metal organic chemical vapor deposition of ferroelectric SrBi2Ta2O9 films from fluorine-containing precursor system. Chemistry of Materials, vol. 18, n° 4, p. 1016-1022, 2006 http://dx.doi.org/10.1021/cm051151

Courtade L., Muller Ch., Andreoli G., Turquat Ch., Goux L., Wouters D.J. Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays. Applied Physics Letters, vol. 89, n° 11, p. 113501(1-3), 2006 http://dx.doi.org/10.1063/1.2339044

Kuznetsov D.K., Baturin I.S.,  Shur V. Ya., Menou N., Muller Ch., Schneller T., Sternberg A. Kinetics of polarization reversal in irradiated thin PZT films. Physics of the Solid State, vol. 48, no. 6, p. 1174-1176, 2006 http://dx.doi.org/10.1134/S1063783406060497

Kuznetsov D.K., Shur V.Ya., Baturin I.S., Menou N., Muller Ch., Schneller T., Sternberg A. Effect of penetrating irradiation on polarization reversal in PZT thin films. Ferroelectrics, vol. 340, p. 161-167, 2006 http://dx.doi.org/10.1080/00150190600889288

Menou N., Muller Ch., Goux L., Barrett R., Lisoni J.G., Schwitters M., Wouters D.J. Microstructural analysis of integrated pin-shaped 2D and 3D ferroelectric capacitors from micro-focused synchrotron x-ray techniques. Journal of Applied Crystallography, vol. 39, no. 3, p. 376-384, 2006 http://dx.doi.org/10.1107/S002188980601082X

Molas G., Deleruyelle D., De Salvo B., Ghibaudo G., Gély M., Perniola L., Lafond D., Deleonibus S. Degradation of Floating-Gate Memory Reliability by Few Electron Phenomena. IEEE Transactions on Electron Devices, vol. 53, n° 10, p. 2610-2619, 2006 http://dx.doi.org/10.1109/TED.2006.882284

Muller C., Menou N., Barrett R., Save D. Non destructive microstructural diagnostic of integrated ferroelectric capacitor arrays : correlation with electrical characteristics. Journal of Applied Physics, vol. 99, n° 5, p. 054504 (1-5), 2006 http://dx.doi.org/10.1063/1.2176110

Autran J.L., Roche P., Borel J., Sudre C., Castellani-Coulié K., Munteanu D., Parrassin T.,  Gasiot G., Schoellkopf J.P. Altitude SEE Test European Platform (ASTEP): project overview, first results in CMOS 130 nm and perspectives. IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 1002-1009, 2007 http://dx.doi.org/10.1109/TNS.2007.891398

Khachane M., Nowakowski P., Villain S., Gavarri J.R., Muller Ch., Elaatmani M., Outzourhite A., Luk'yanchuk I., Zegzouti A., Daoud M. Catalytic behaviors of ruthenium dioxide films deposited on ferroelectrics substrates, by spin coating process. Applied Surface Science, vol. 254, n° 5, p. 1399-1404, 2007 http://dx.doi.org/10.1016/j.apsusc.2007.06.059

Le Roux C., Lopez L., Firiti A., Ogier J.L., Lalande F., Laffont R., Micolau G. A new method to quantify retention-failed cells of an EEPROM CAST. Microelectronics Reliability, vol. 47, p. 1609-1613, 2007 http://dx.doi.org/10.1016/j.microrel.2007.07.083

Lisoni J.G., Johnson J.A., Goux L., Paraschiv V., Maes D., Van der Meeren H., Willegems M., Haspeslagh L., Wouters D.J., Caputa C., Zambrano R., Turquat Ch., Muller Ch. Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures. Journal of Applied Physics, vol. 101, n° 1, p. 014908 (1-7), 2007 http://dx.doi.org/10.1063/1.2405011

Mouhoubi S., Yao T., Lalande F., Canet P. Thermal behavior of floating gate oxide defects (moving bits). Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 615-619, 2007 http://dx.doi.org/10.1016/j.jnoncrysol.2006.11.022

Munteanu D., Autran J-L., Ferlet-Cavrois V., Paillet P., Baggio J., Castellani-Coulié K. 3D quantum numerical simulation of single-event transient in multiple-gate nanowire MOSFETs. IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 994-1001, 2007 http://dx.doi.org/10.1109/TNS.2007.892284

Postel-Pellerin J., Lalande F., Canet P., Boutahar S., Bouchakour R., Pizzuto O., Regnier A. Impact of stress on Fowler-Nordheim parameters effects on EEPROM threshold voltage. Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 610-614, 2007 http://dx.doi.org/10.1016/j.jnoncrysol.2006.11.020

Regnier A., Portal J.M., Bouchakour R. NMOS electrical model for halo implant study. Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 620-624, 2007 http://dx.doi.org/10.1016/j.jnoncrysol.2006.11.012

Regnier A., Saillet B., Portal J.M., Bouchakour R. CHE and CHISEL characterization procedure for compact Flash cell model. Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 625-629, 2007 http://dx.doi.org/10.1016/j.jnoncrysol.2006.11.019

Zahi Y., Laffont R., Lalande F., Boutahar S., Bouchakour R. Tunneling injection temperature dependence in EEPROM cell. Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 648-652, 2007 http://dx.doi.org/10.1016/j.jnoncrysol.2006.11.021

Aziza H., Bergeret E., Portal J.M., Ginez O. A novel low power-oriented design methodology for analog blocks. Journal of Low Power Electronics, vol. 4, n° 1, p. 60-67, 2008 http://dx.doi.org/10.1166/jolpe.2008.151

Aziza H., Delsuc B. Device and memory array models for Flash EEPROM technology. WSEAS Transactions on Circuits and Systems, vol. 7, n° 4, p. 249-258, 2008

Courtade L., Turquat Ch., Muller Ch., Lisoni J.G., Goux L., Wouters D.J., Goguenheim D., Roussel P., Ortega L. Oxidation kinetics of Ni metallic film: formation of NiO-based resistive switching structures. Thin Solid Films, vol. 516, n° 12, p. 4083-4092, 2008 http://dx.doi.org/10.1016/j.tsf.2007.09.050

Deleruyelle D., Micolau G. On the electrostatic behavior of floating nanoconductors . Solid-State Electronics, vol. 52, n° 1, p. 17-24, 2008 http://dx.doi.org/10.1016/j.sse.2007.07.008

Khachane M., Nowakowski P., Villain S., Gavarri J-R., Muller Ch., Luk’yanchuk I., Elaatmani M., Outzourhite A., Zegzouti A. Catalytic studies of RuO₂ films deposited on ferroelectrics films by spin coating process. Ferroelectrics, vol. 371, p. 34-42, 2008 http://dx.doi.org/10.1080/00150190802385069

Le Roux C., Lopez L., Firiti A., Ogier J.L., Lalande F., Laffont R., Micolau G. An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test. Solid-State Electronics, vol. 52, n° 10, p. 1550-1554, 2008 http://dx.doi.org/10.1016/j.sse.2008.06.011

Lesea A., Castellani-Coulié K., Waysand G., Le Mauff J., Sudre C. Qualification methodology of sub-micron ICs in the Low Noise Underground Laboratory of Rustrel. IEEE Transactions on Nuclear Science, vol. 55, n° 4, p. 2148-2153, 2008 http://dx.doi.org/10.1109/TNS.2008.2000863

Noheda B., Muller Ch. Guest Editorial: Phase transitions in functional thin films. Phase Transitions, vol. 81, n° 7-8, p. 603-606, 2008

Raguet J.R., Bidal V., Regnier A., Mirabel J.M., Laffont R., Bouchakour R. New EEPROM concept for single bit operation. Solid-State Electronics, vol. 52, n° 10, p. 1525-1529, 2008 http://dx.doi.org/10.1016/j.sse.2008.06.027

Aziza H., Pérez A., Bergeret E. Analog Blocks Design Automation. Journal of WSEAS transactions on circuits and systems (WSEAS), vol. 8, n° 8, p.686-695, 2009 ISSN: 1109-2734

Postel-Pellerin J., Lalande F., Canet P., Bouchakour R., Jeuland F., Bertello B., Villard B. Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. Microelectronics Reliability, vol. 49, no. 9-11, p. 1056-1059, 2009 http://dx.doi.org/10.1016/j.microrel.2009.06.020

Postel-Pellerin J., Lalande F., Canet P., Bouchakour R., Jeuland F., Morancho L. Modeling charge variation during data retention of MLC Flash memories. Microelectronics Reliability, vol. 49, n° 9-11, p. 1060-1063, 2009 http://dx.doi.org/10.1016/j.microrel.2009.06.034

Raguet J-R., Calenzo P., Laffont R., Deleruyelle D., Bouchakour R., Bidal V., Regnier A., Niel S., Fornara P., Mirabel J-M. A Dual-Gate Memory Cell with Two Inter-Poly Oxides. Japanese Journal of Applied Physics, vol. 48, n° 4, p. 04C058-1–04C058-5, 2009 http://dx.doi.org/10.1143/JJAP.48.04C058

Remy L., Coll P., Picot F., Mico P., Portal J-M. Study of the Metal Filling Impact on Standard Cells and their Associated Interconnects Using Ring Oscillators : Definition of the Metal Fill Corner Concept. Journal of Integrated Circuits and Systems, vol. 4, n° 1, p. 13-19, 2009

Roca M., Laffont R., Micolau G., Lalande F., Pizzuto O. A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories. Microelectronics Reliability, vol. 49, n° 9-11, p. 1070-1073, 2009 http://dx.doi.org/10.1016/j.microrel.2009.06.036

Goux L., Courtade L., Lisoni J.G., Muller Ch., Jurczak, Wouters D.J. Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni. Journal of Applied Physics, accepted.