Our
research activities are currently targeted at four topics gathered around the
nc-AFM technique in UHV.
Owing to their large
optical gap, bulk insulators are natural candidates for
applications in optoelectronics involving molecular layers at the surface.
Their weak surface reactivity allows for the electronic decoupling of the
molecular layers from the substrate, while preserving their intrinsic
functional properties, which is an important issue for functional nano-devices.
Alkali halides single crystals are particularly interesting as they sometimes
allow for the growth of well-extended molecular networks, as demonstrated in
the case of perylene on KCl(001) (T. Dienel et al., Adv. Mat. 20,
959, 2008). For this system, it has been demonstrated that the molecular layer
displays much sharper absorption spectra than in solution owing to its
commensurate growth on the substrate and the subsequent minimization of
the inhomogeneous broadening.
With these ideas in
mind, we started investigating the molecule of benzene diboronic acid (BDBA) on
KCl(001). In the volumic phase, BDBA molecules are known to form a lamellar
structure, wherein the cohesion within each lamella is ensured by hydrogen
bonds. When deposited on Ag(111) at room temperature, it has been demonstrated
in the Nanostructuration group that the molecules polymerize to form a robust
bi-dimensional covalent organic framework. When deposited on KCl(001) at room
temperature, the molecules do not polymerize, but rather form a bi-dimensional
supramolecular phase which is stabilized by hydrogen bonds. The phase consists
of parallel rows of densely-packed molecules, 0.52 nm far apart from each
other. The rows are separated by 1nm. The structural analysis shows that there
is one molecule per unit cell that develops four H-bonds with the neighboring
molecules. The growth of the supramolecular phase is only made possible by the
conformational adaptation of the molecule that tilts its central benzene ring
and hence, allows for the strengthening of the intermolecular H-bonds. This
bi-dimensional phase is almost analogous to the one observed in individual
lamellae of the volumic phase.
DFT calculations performed
by V.Oison and M.Sassi from the theory group at the IM2NP have confirmed the supramolecluar
structure and have computed a cohesion energy for it of about 0.95eV per unit
cell, corresponding to almost 0.25eV/H-bond (5.2kcal/mole), i.e.
intermediate-strength H-bonds.
|
|
|
|
|
|
Fig.2 a- (35x25)nm2 nc-AFM
image of BDBA molecules on KCl(001). The molecular layer is visible on the
left-hand of the figure and the atomic resolution on KCl is visible on the
right-hand side. b- nc-AFM image of the supramolecular phase of BDBA showing
dense rows of molecules. The unit cell is rectangular and consists of one
molecule developing four H-bonds with the neighboring molecules. c-
Structural model of the supramolecular phase showing the rectangular unit
cell with the four H-bonds engaged by each molecule. It must be noticed that
such a phase is allowed to the rotation of the benzene ring w.r.t. the plane
of B(OH)2 groups.
|
|
This project is funded
by the “Agence Nationale pour
A large consortium of French research groups are involved in the project,
among which the group Nanostructuration at the IM2NP. Its main task is to
undertake a comprehensive study of the adsorption of the functionalized
molecules at the surface of the 6H-SiC(0001) with the goal to trigger their ordered
growth. We expect to benefit from the wealth of surface reconstructions of the
6H polytype of SiC, among which the 3x3 and the (√3x√3)R30°.
First, following the bottom-up approach, the different adsorption stages will
be investigated up to the monolayer regime in LEED, nc-AFM and inverse
photoemission. The Nano-AFM group started the first nc-AFM; LEED and Auger investigations
in September 2009 on the bare 6H-SiC(0001). In Fig.3 are given the first LEED patterns
that have been obtained. nc-AFM
characterizations of the 3x3 surface reconstruction are currently in progress.
|
|
|
Fig.3- LEED patterns of the
reconstructions of the 6H-SiC(0001) surface recorded at 115 eV. From left to
right: 3x3, (√3x√3)R30° and (6√3x6√3)R30°.
For each pattern, the 1x1 unit cell of the surface is shown in red
|
1.
Analytical approach to the local contact potential
difference (LCPD) probed by Kelvin Probe Force Microscopy on the atomic-scale
We have developed an analytical approach to the LCPD
with the goal in mind to better understand the atomic-scale contrast observed
while Kelvin Probe Force Microscopy measurements (KPFM) on KBr(001) (F.Bocquet et
al., Phys.Rev.B 24, 1791 (2008)). The approach relies on the
determination of the electrostatic force occurring between a metallic tip
carrying a small metallic cluster in topmost position and the bulk ionic
crystal below. Our approach, which is self-consistent and based on classical
electrostatics, states that the ions at the surface undergo dynamic
displacements (ionic polarization) under the influence of the inherent
modulation of the bias voltage between the tip and the crystal that is required
ny the KPFM technique. The force, with a short-range nature, is site-dependent
and has the lateral periodicity of the Madelung surface potential, i.e. the one
of the underlying ionic lattice. It does not only scale quadratically with the
applied bias voltage, but also linearly. The analytical approach to the KPFM
method, i.e. actually the analytical expression of the DC potential that
nullifies this force, namely the LCPD, shows that the latter force is
responsible for the atomic-scale contrast in KPFM but that any quantitative
connection to the physical observables such as the Madelung surface potential
or the local work function can be made owing to the convolution of the detected
LCPD by the tip’s geometrical parameters.
|
|
|
|
Fig.4- Overview of the assumptions required to perform
the analytical calculation of the electrostatic force in KPFM
|
Fig.5- Analytical expression for the electrostatic force
which exhibits a short-range character as well as the lateral periodicity of
the underlying ionic lattice. This force is responsible for the atomic-scale
contrast reported in KPFM.
|
2.
Simulating the nc-AFM/KPFM setup.
Following the analytical developments, we have
implemented the KPFM operational mode within the core of an accurate numerical
implementation of the nc-AFM setup, the so-called nc-AFM simulator (L.Nony et
al., Phys.Rev.B 74, 235439 (2006)). With the fully numerical
nc-AFM/KPFM setup, it is possible to simulate spectroscopic curves as well as
topographical and LCPD images. In collaboration with Prof. Adam Foster from
|
|
|
|
Fig.6- Sketch of the numerical nc-AFM/KPFM setup, based
on the experimental implementation of the FM-KPFM setup
|
|
|
|
|
|
Fig.7- a- Sketch of the numerical
tip-surface setup. We have set zm =
|
Fig.8- a-
Topographical image computed with the nc-AFM/KPFM simulator. The vertical
contrast is 38 pm. b- Simultaneously computed LCPD image. The contrast ranges
from -2.24 to -1.69 V (0.56 V full scale). c- LCPD image computed at constant
height, z = 0.45 nm. The contrast ranges from -2.24 to -1.38 V (0.86 V full
scale), consistently with the expected range deduced from Fig.3b. d-
Evolution of the magnitude of the LCPD contrast (dots) and of the average
LCPD (squares) as a function of the distance.
|
This project is funded by the “Agence Nationale
pour
For a given temperature kBT and
bandwidth B, the sensitivity of the instrument can be improved by
increasing the resonance frequency ω0 and/or the quality
factor Q. Reducing the stiffness k is not possible below a
certain limit, due to the occurrence of a jump-to-contact instability when the
tip gets close to the surface.
1.
Increasing
the resonance frequency
of CLs while keeping k at values compatible with NC-AFM requires
a decrease of the effective mass of the device, hence a size reduction. Here,
we aim at developing CLs with submicronic dimensions (typically 1 x 0.4
x 0.1 μm3) from monocrystalline silicon carbide 3C-SiC films
grown on Si. The excellent mechanical properties of SiC, when compared to Si,
combined with the small size of these devices allow to reach resonance
frequencies as high as 100 MHz, leading to a 100-fold increase
relative to the silicon cantilevers in use nowadays.
2.
Increasing
the quality factor will be
done by optimizing the SiC material properties through a better understanding
of the role of the bulk and surface defects in the dissipation of mechanical
energy. We expect that these improvements will be beneficial well beyond NC-AFM
applications, for SiC-based MEMS/NEMS and power microelectronics.
3.
The
small size of these nano-CLs disqualifies the usual optical techniques for
measuring their motion. The method to detect the CL displacement will be based
on the strain-induced variations of the resistance of a thin metallic film
deposited on the CL. This metallic piezoresistivity based approach is
radically different from the semiconducting piezoresistivity based approach
that has been used for about 10 years for AFM CLs. As demonstrated recently, it
presents distinct advantages that will be fully exploited in the present
project.
4.
The
increase of the resonance frequency for NC-AFM so far was not only limited by
the absence of appropriate fabrication facilities for the force sensors but
also by the limited frequency range of commercial electronics (max. ~ 5 MHz).
Extending the frequency range up to 100 MHz involves totally different technical
solutions that will be developed in the project.
5.
Finally,
the optimization of the instrument and its control system requires extensive
simulations, which will be carried out by extending an existing "virtual
NC-AFM" program to CLs with resonant frequency in the 100 MHz range.
In collaboration with
H.Barthélémy’s group at the IM2NP (circuits design
team), the Nano-AFM group is in charge to develop a high-speed PLL for
being used with these integrated cantilevers.