| Equipe Nanostructures Semiconductrices Epitaxiées Epitaxial Semiconductor Nanostructures Team | ||
| Adresse : IM2NP Faculté des Sciences et Techniques Bat. Salle blanche (face labo Fresnel) Case 142 Avenue Escadrille Normandie Niemen 13397 Marseille Cedex 20 France | ||
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Articles parus dans des revues à comité de lecture depuis 2006 Ayoub J.-P., Favre L., Ronda A., Berbezier I., De Padova P., Olivier B. Structural and magnetic properties of GeMn diluted magnetic semiconductor. Materials Science in Semiconductor Processing, vol. 9, n° 4-5 , p. 832-835, 2006 Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M. Formation and ordering of Ge nanodots on SiO2. Materials Science in Semiconductor Processing, vol. 9, p. 812, 2006 Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M. Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films. Applied Physics Letters, vol. 89, p. 063122, 2006 Favre L., Dupuis V., Bernstein E., Mélinon P., Pérez A., Stanescu S., Epicier T., Simon J.-P. Structural and magnetic properties of CoPt mixed clusters. Physical Review B, vol. 74, p. 014439, 2006 Karmous A. Berbezier I., Ronda A. Formation and ordering of Ge nanocrystals on SiO2. Physical Review B, vol. 73, n° 7, p. 075323, 2006 Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I. Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys. Materials Science in Semiconductor Processing, vol. 9, p. 836, 2006 Pascale A., Berbezier I., Ronda A., Videcoq A., Pimpinelli A. Kinetic modeling of Si growth instabilities. Applied Physics Letters, vol. 89, p. 104108, 2006 Rohart S., Raufast C., Favre L., Bernstein E., Bonet E., Dupuis V. Magnetic anisotropy of CoxPt1-x clusters embedded in a matrix: Influences of the cluster chemical composition and the matrix nature. Physical Review B, vol. 74, p. 104408, 2006 Ayoub J.-P., Favre L., Berbezier I., Ronda A., Morresi L., Pinto N. Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films. Applied Physics Letters, vol. 91 , n° 14, p. 141920, 2007 Berbezier I. , Ronda A. Self-assembling of Ge dots on nanopatterns : experimental investigation of their formation, evolution and control. Physical Review B, vol. 75, p. 195407, 2007 Chmielowski R., Madigou V., Ferrandis P., Zalecki R., Blicharski M., Leroux C. Ferroelectric Bi3.25La0.75Ti3O12 thin films on a conductive Sr4Ru2O9 electrode obtained by pulsed laser deposition. Thin Solid Films, vol. 515, p. 6314-6318, 2007 De Padova P., Ayoub J.P., Berbezier I., Mariot JM., Taleb-Ibrahimi A., Richter M.C., Heckmann O., Testa A.M., Fiorani D., Olivieri B., Picozzi S., Hricovini K. MnxGe1-x thin layers studied by TEM, X-ray absorption spectroscopy and SQUID magnetometry. Surface Science, vol. 601, p. 2628, 2007 De Padova P., Favre L., Berbezier I., Olivieri B., Generosi A., Paci B., Rossi Albertini V., Perfetti P., Quaresima C., Mariot J.-M., Taleb-Ibrahimi A., Richter M.C., Heckmann O., D’Orazio F., Lucari F. and Hricovini K. Structural and magnetic properties of Mn5Ge3 nanoclusters dispersed in MnxGe1−x/Ge(0 0 1)2 × 1 diluted magnetic semiconductors. Surface Science, vol. 601, n° 18 , p. 4370 4374, 2007 Gacem K., El Hdiy A., Troyon M., Berbezier I., Szkutnik P.D., Karmous A., Ronda A. Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide. Journal of Applied Physics, vol. 102, p. 093704, 2007 Hendrich C., Favre L., Ievlev D. N., Dobrynin A. N., Bras W., Hörmann U., Piscopiello E., Van Tendeloo G., Lievens P., Temst K. Measurement of the size of embedded metal clusters by mass spectrometry, transmission electron microscopy, and small-angle X-ray scattering. Applied Physics A : Materials Science & Processing, vol. 86, n° 4, p. 533-538, 2007 Karmous A., Berbezier I. , Ronda A., Hull R., Graham J. Ordering of Ge nanocrystals using FIB nanolithography. Surface Science, vol. 601, p. 2769, 2007 Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I., D'Orazio F., Lucari F. Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C. Surface Science, vol. 601, p. 2632, 2007 Moskovkin P., Pisov S., Hou M., Raufast C., Tournus F., Favre L., Dupuis V. Model predictions and experimental characterization of Co-Pt alloy clusters. The European Physical Journal D : Atomic, Molecular, Optical and Plasma Physics, vol. 43, n° 1-3, p. 27-32, 2007 Nassiopoulou A.G., Olzierski A., Tsoi E., Berbezier I., Karmous A. Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots. Journal of Nanosciences and Nanotechnology, vol. 7, p. 316, 2007 Rohart S., Raufast C., Favre L., Bernstein E., Bonet E., Wernsdorfer W., Dupuis V. Interface effect on the magnetic anisotropy of CoPt clusters. Journal of Magnetism and Magnetic Materials, vol. 316, p. e355 - e359, 2007 Scarselli M., Masala S., Castrucci P., De Crescenzi M., Gatto E., Venanzi M., Karmous A., Szkutnik P.D., Ronda A., Berbezier I. Optoelectronic properties in quantum-confined germanium dots. Applied Physics Letters, vol. 91, p. 141117, 2007 Szkutnik P.D. , Sgarlata A., Motta N., Placidi E., Berbezier I., Balzarotti A. Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces. Surface Science, vol. 601, p. 2778, 2007 Szkutnik P.D., Sgarlata A., Balzarotti A., Motta N., Ronda A., Berbezier I. Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along [110]. Physical Review B, vol. 75, p. 033305, 2007 De Crescenzi M., Scarselli M., Sgarlata A., Masala S., Castrucci P., Gatto E., Venanzi M., Karmous A., Ronda A., Szkutnik P.D., Berbezier I. Photocurrent generation from Ge nanodots in the near UV and visible region. Superlattices and Microstructures, acceptée, 2009 vol. 44, n° 4, p. 331-336, 2008 De Padova P., Ayoub JP, Berbezier I., Perfetti P., Quarissima C., Testa A.M., Fiorani D., Olivieri B., Mariot J.M., Taleb-Ibrahimi A., Richter M.C., Heckmann O., Hricovin K. MnxGe1-x thin layers studied by TEM, X-ray absorption spectroscopy and SQUID magnetometry. Physical Review B, vol. 77, p. 045203, 2008 El Hdiy A., Gacem K., Troyon M., Ronda A., Bassani F., Berbezier I. Germanium nanocrystal density and size effects on carrier storage and emission. Journal of Applied Physics, vol. 104, p. 063716, 2008 Pascale A., Berbezier I., Ronda A., Kelires P. Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001). Physical Review B, vol. 77, p. 075311, 2008 Rowell N.L., Lockwood D.J., Karmous A., Szkutnik P.D., Berbezier I., Ronda A. Photoluminescence of Ge nanocrystals self-assembled on SiO2. Superlattices and Microstructures, vol. 44, n° 4, p. 305-314, 2008 Szkutnik P.D., Karmous A., Bassani F., Ronda A., Berbezier I., Gacem K., El Hdiy A., Troyon M. Ge nanocrystals formation on SiO2 by dewetting : application to memory. The European Physical Journal : Applied Physics, vol. 41 , p.103-106, 2008 Tay L.-L., Rowell N.L., Ayoub J.-P., Berbezier I., Morresi L., Pinto N. Raman measurements of Ge1−xMnx epilayers. Superlattices and Microstructures, acceptée, 2009 vol. 44, n° 4, p. 315-322, 2008 Rowell NL, Lockwood DJ, Berbezier I, Szkutnik PD, Ronda A. Photoluminescence Efficiency of Self-Assembled Ge Nanocrystals. Journal of the Electrochemical Society, 156, H913, 2009 Gacem K, El Hdiy A, Troyon M, Berbezier I, Ronda A. Conductive AFM microscopy study of the carrier transport and storage in Ge nanocrystals grown by dewetting. Nanotechnology, 21, 065706, 2010 Chapitres invités Berbezier I., Karmous A., Ronda A. Ge nanodroplets self-assembling on Focused Ion Beam patterned substrates. in "Nanoscience and Technol.", Chap. 15, Ed. O. Schmidt , Springer-Verlag Berlin Heidelberg, 2007 Berbezier I., Ronda A., Karmous A. Ge quantum dot self-alignment on vicinal substrates. in "Nanoscience and Technol.", Chap. 6, Ed. O. Schmidt , Springer-Verlag Berlin Heidelberg, 2007 Berbezier I., Ronda A. Si/SiGe Heterostructures for advanced microelectronic devices. Phase transitions, 81, 751, 2008 Berbezier I., Ronda A. SiGe Nanostructures. Surface Science, vol. 64, n° 2, p. 47-98, 2009 | ||

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