Equipe Réactivité et Diffusion aux Interfaces
Reactivity and Diffusion at Interfaces Team

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Accueil    |    Membres de l'Equipe    |    Publications

Articles et communications parus dans des revues à comité de lecture depuis 2006

Bergman C.,Girardeaux C., Perrin C., Gas P., Chatain D., Dubois J.M., Rivier N.R. Wetting of decagonal Al13Co4 and cubic AlCo thin films by liquid Pb. Philosophical Magazine, vol. 86, n° 6­8, p. 849­854, 2006

Bernardini J, Girardeaux C., Rolland A. Experimental evidence of iron segregation in copper grain boundaries as deduced from type B diffusion measurements. Defect and Diffusion Forum, vol. 249, p. 161, 2006

Dalmas J., Oughaddou H., Lelay G., Aufray B., Treglia G., Girardeaux C., Bernardini J, Fujii J., Panaccione G. Photoelectron spectroscopy study of Pb/Ag(111) in the submonolayer range. Surface Science, vol. 600, n° 6, p. 1227-1230, 2006

Ehouarne L., Putero M, Mangelinck D, Nemouchi F, Bigault T, Ziegler E and Coppard R. In situ study of the growth kinetics and interfacial roughness during the first stages of nickel-silicide formation. Microelectronics Engineering, vol. 83, p. 2253-2257, 2006

Girardeaux C., Aufray B., Bernardini J., Dallaporta H., Le Lay G. and Soukiassian P. Préface. Journal de Physique IV - Proceedings, vol. 132, III-3, 2006

Hoummada K., Cadel E., Mangelinck D., Perrin-Pellegrino C., Blavette D., Deconihout B. First stages of the formation of Ni silicide by atom probe tomography. Applied Physics Letters, vol. 89, n° 18, p. 81905, 2006

Hoummada K., Mangelinck D., Perrin C., Gas P., Carron V., Holliger P., et Ziegler E. Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature : role of agglomeration. Microelectronics Engineering, vol. 83, n° 11, p. 2264-2267, 2006

Leandri C., Aufray B., Le Lay G., Girardeaux C., Ottaviani C. and Cricenti A. Ordered silicon structures on silver (100) at 230°C. Journal de Physique IV - Proceedings, vol. 132, p. 311, 2006

Mangelinck D. Effect of a third element on the stability of NiSi thin films on Si. Defect and Diffusion Forum, vol. 249, p. 127-134, 2006

Mangelinck D. Synthèse et stabilité des RDI siliciures/semiconducteurs: approche thermocinétique. 1er Congrès International sur La Basse Dimensionalité et la NanoTechnologie, El Jadida, Maroc, 1-3 Novembre 2006

Nemouchi F. , D. Mangelinck, C. Bergman, G. Clugnet, Gas P. Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge. Applied Physics Letters, vol. 89, p. 131920, 2006

Nemouchi F., Mangelinck D, J.L. Lábár, M. Putero, C. Bergman, Gas P. A comparative study of nickel silicides and nickel germanides: phase formation and kinetics. Microelectronics Engineering, vol. 83, p. 2101-2106, 2006

Nyeki J.,Girardeaux C., Rolland A., Bernardini J. AES measurements of Sb mass transport in amorphous Si thin films. Journal de Physique IV - Proceedings, vol. 132, p. 255-, 2006

Portavoce A., Berbezier I., Ronda A., Gas P., Christensen J.S., Kuznetsov A.Yu., Svensson B.G. Dopant diffusion in Si1-xGex thin films : Effect of epitaxial stress. Defect and Diffusion Forum, vol. 249, p. 135, 2006

Portavoce A., Kammler M., Hull R., Reuter M.C., Ross F.M. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces. Nanotechnology, vol. 17, p. 4451, 2006

Pradeilles N., Record M.C., Marin-Ayral R.M. A derivate SHS method for Si2N2O elaboration. Journal of the European Ceramic Society, vol. 26, n° 13, p. 2489-2495, 2006

Pradeilles N., Record M.C., Marin-Ayral R.M. Effect of different additives on self-propagating high temperature synthesis of silicon nitride. International Journal of SHS, vol. 15, n°2, p. 157-167, 2006

Rodriguez N., Adrian J., Grosjean C., Haller G., Girardeaux C., Portavoce A. Evaluation of scanning capacitance microscopy sample preparation by focused ion beam. Microelectronics Reliability, vol. 46, n° 9-11, p. 1554-1557, 2006

Zarbout K., Moya G., Bernardini J., Moya-Siesse D., Si Ahmed A., Kansy J., Goeuriot D. Consequences of silicon segregation on the dielectric properties of sintered alumina. Defect and Diffusion Forum, vol. 249, p. 281-286, 2006

Adrian J; Rodriguez, N; Essely, F, Haller G, Grosjean C, Portavoce A, Girardeaux C. Investigation of a new method for dopant characterization. Microelectronics Reliability, vol. 47, n° 9-11, p. 1599-1603, 2007

Cojocaru-Mirédin O., Mangelinck D., Hoummada K., Cadel E., Blavette D., Deconihout B., et Perrin-Pellegrino C. Snowplow effect and reactive diffusion in the Pt doped Ni–Si system. Scripta Materialia, vol 57, 5, p. 373-376, 2007

De Jouvancourt H., Record M.C, Marin-Ayral R.M. The effects of platinum concentration on the combustion synthesis of NiAl. Application in repairing Ni-based super-alloys. Materials Science and Technology, vol. 23, n°5, p. 593-599, 2007

Hoummada K., Mangelinck D., Cadel E., Perrin-Pellegrino C., Blavette D., et Deconihout B. Formation of Ni silicide at room temperature studied by laser atom probe tomography. Microelectronic Engineering, vol. 84, n° 11, p. 2517-, 2007

Jenanne A., Sassi O., Sayouti E. H., Aride J., Bernardini J., Moya G. Magnetic susceptibility isochronal study in quenched Ni2Si intermetallic compound. Physical and Chemical News, vol. 36, p.127-130, 2007

Li J.B., Record M.C., Tedenac J.C. A thermodynamic assessment of the Sb-Zn system. Journal of Alloys and Compounds, vol. 438, p. 171-177, 2007

Nemouchi F., V. Carron, J. L. Lábár, M. Putero, L. Ehouarne, B. Arrazat, Y. Morand, S. Descombes, J. P. Barnes, D. Mangelinck, Y. Campidelli and O. Kermarrec. Dopant Effect On NiGe texture during Nickel Germanide growth. ECS Transactions, vol 6, p. 49-59, 2007

Niepce J.C. and GFA members. Main recent contributions to SHS from France. International Journal of SHS, vol. 16, n°4, p. 235-255, 2007

Perrin C., Nemouchi F., Clugnet G., et Mangelinck D. Anisotropy of the thermal expansion of the Ni(Si[sub 1 - x]Ge[sub x]) phases investigated by high-temperature x-ray diffraction. Journal of Applied Physics, vol 101, 7, p. 073512, 2007

Portavoce A, Simola R., Mangelinck D., Bernardini J., P.fornara P. Dopant diffusion during amorphous Silicon crystallisation. Diffusion and Defect Data, vol 264,33-38, 2007

Portavoce A., Hull R., Reuter M.C., Ross F.M. Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation. Physical Review B, vol. 76, p. 235301-, 2007

Record M.C, De Jouvancourt H., Marin-Ayral R.M. Elaboration of platinum-modified NiAl coatings by combustion synthesis : simultaneous repairing and coating of Ni-based superalloys. International Journal of SHS, vol. 16, n°4, p. 199-206, 2007

Viennois R., Record, M.C., Izard V., Tedenac J.C. Raman scattering study of the lattice dynamics of -Zn4-xCdxSb3. Journal of Alloys and Compounds, vol. 440, p. L22-25, 2007

Yao H. B, Bouville M, Chi D Z, Sun H P, Pan X Q, Srolovitz D J, Mangelinck D. Interplay between grain boundary grooving, stress, and dealloying in the agglomeration of NiSi1-xGex films. Electrochemical and Solid State Letters, vol. 10, p. H53-H55, 2007

Balogh Z., Erdelyi Z., Beke DL., Langer GA., Csik A., Boyen HG., Wiedwald U., Ziemann P., Portavoce A., Girardeaux C. Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge. Applied Physics Letters, vol. 92, n° 14, p. 143104, 2008

Berche A., M.C. Record, Rogez J. Triangulation of the La-Zn-Mg system. Archives of Metallurgy and Materials, vol. 53-4, 1141-1148, 2008

Blum I., A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, J. L. Lábár, V. Carron, and C. Perrin. Lattice and grain-boundary diffusion of As in Ni2Si. Journal of Applied Physics, vol. 104, p. 114312, 2008

Hoummada K., Mangelinck D., Perrin C., Carron V., et Holliger P. Measurement of arsenic redistribution at nickel silicide/silicon interface by secondary ion mass spectrometry: artefact and optimized analysis conditions. Journal of Applied Physics, vol 104, 2, p. 024313, 2008

Hoummada K., Portavoce A., Perrin-Pellegrino C., Mangelinck D., et Bergman C. Differential scanning calorimetry measurements of kinetic factors involved in salicide process. Applied Physics Letters, vol 92, p. 133109, 2008

Hull R., Floro J., Graham J., Gray J., Gherasimova M., Portavoce A., Ross F.M. Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures. Materials Science in Semiconductor Processing, Vol. 11, p. 160, 2008

Jennane A., Sassi O., Bernardini J., Moya G. Point defects characterization in Ni2Si as deduced from isothermal magnetic susceptibility measurements. Defect and Diffusion forum, vol.273-276, p.312-317, 2008

Mangelinck D., Hoummada K. Effect of stress on the transformation of Ni2Si into NiSi. Applied Physics Letters, vol. 92, 254101, 2008

Mangelinck D., K. Hoummada, O. Cojocaru-Mirédin, E. Cadel, C. Perrin-Pellegrino, D. Blavette. Atom probe tomography of Ni silicides : First stages of reaction and redistribution of Pt. Microelectronic Engineering, vol. 85, n° 10, p. 1995-1999, 2008

Pareige P., Cadel E., Sauvage X., Deconihout B., Blavette D., Mangelinck D.  Atomic resolution analyses of nano-structured materials by atom probe tomography. International Journal of Nanotechnology, vol. 5, p. 592-608, 2008

Perrin C., Mangelinck D., Nemouchi F., Labar J., Lavoie C., Bergman C., et Gas P. Nickel silicides and germanides: Phases formation, kinetics and thermal expansion. Materials Science and Engineering : B, vol 154-155, p. 163-167, 2008

Portavoce A., Chai G., Chow L., Bernardini J. Nanometric size effect on Ge diffusion in polycrystalline Si. Journal of Applied Physics, vol. 104, p. 104910, 2008

Portavoce A., Hull R., Reuter .C., Copel M., Ross F.M. Control of homoepitaxial Si nanostructures by locally modified surface reactivity. Applied Physics Letters, vol. 92, p. 053106-, 2008

Pradeilles N., Record M.C., Granier D., Marin-Ayral R.M. Synthesis of beta-SiAlON: a combined method using sol-gel and SHS processes. Ceramics International, vol. 34, n°5, p. 1189-1194, 2008

Pradeilles N., Record M.C., Marin-Ayral R.M., Linde A.V., Studenikin I.A., Grachev V.V. Influence of thermal conditions on combustion synthesis of Si2N2O phase. Materials Research Bulletin, vol. 43, p. 463-472, 2008

Zarbout K., Si Ahmed A., Moya G., Bernardini J., Goeuriot D., Kallel A. Stability of trapped charges in sapphires and alumina ceramics: evaluation by secondary electron emission. Journal of Applied Physics, vol. 103, n° 6, p.054107/1-054107/7, 2008

Balogh Z., Erdélyi Z., Beke D.L., Portavoce A., Girardeaux C., Bernardini J., Rolland A. Silver grain boundary diffusion in Pd. Applied Surface Science, vol. 255, p. 4844, 2009

Balogh Z., Erdélyi Z., Beke D.L., Portavoce A., Girardeaux C., Bernardini J., Rolland A. Determination of Grain Boundary Diffusion Coefficients in C-regime by Hwang-Balluffi method: Silver Diffusion in Pd. Defect and Diffusion Forum, vol. 289-292, p. 763, 2009

Berche A., Marinelli F., Mikaelian G., Rogez J., Record M.C. Enthalpies of formation of the La-Zn compounds between 298 and 910K. Experimental and theoretical investigations. Journal of Alloys and Compounds,  vol. 475, 79, 2009

Berche A., Record M.C., Rogez J. Critical review of the La-Zn system. The Open Thermodynamics Journal, vol. 3, 7-16, 2009

Blum I., A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, J.L. Lábár, V. Carron, J. Bernardini. Measurement of As diffusivity in Ni2Si thin films. Microelectronic Engineering, in press.

Boulet P., Record M-C. Structural Investigation of the Zn_1-xCd_xSb Solid Solution by Density Functional Theory Approach. Solid State Sciences, in press.

Cojocaru-Mirédin O., E. Cadel, B. Deconihout, D. Mangelinck and D. Blavette. Three-dimensional atom mapping of boron in implanted silicon. Ultramicroscopy, vol. 109, p. 649-653, 2009

Cojocaru-Mirédin O., E. Cadel, D. Blavette, D. Mangelinck, K. Hoummada, C. Genevois, B. Deconihout. Atomic-scale redistribution of Pt during reactive diffusion in Ni (5% Pt)–Si contacts. Ultramicroscopy, vol. 109, n° 7, p. 797-801, 2009

Cojocaru-Mirédin O., E. Cadel, F. Vurpillot, D. Mangelinck, D. Blavette. 3D Atomic-scale imaging of Boron clusters in implanted silicon. Scripta Materialia, vol. 60, p. 285, 2009

Erdélyi Z., Girardeaux C., Beke D.L., Bernardini J., Portavoce A., Katona1 G.L., Balogh Z., Rolland A. Thin film dissolution into semi-infinite substrates: surprising interface kinetics and dissolution modes. Defect and Diffusion Forum, vol. 289-292, p. 573, 2009

Hoummada K., C. Perrin, D. Mangelinck. Effect of Pt addition on Ni silicide at low temperature: Growth, redistribution and solubility. Journal of Applied Physics, vol. 106, p. 063511, 2009

Lalmi B, Girardeaux C., Portavoce A., Bernardini J., Aufray B. Growth and dissolution kinetics of ultra thin silicon films on Cu(100). Journal of Nanoscience and Nanotechnology, vol. 9, n° 7, p. 4311, 2009

Lalmi B., Girardeaux C., Portavoce A., Bernardini J., Aufray B. Unusual behaviour of the dissolutions kinetics of one monolayer of Si in Cu(001). Defect and Diffusion Forum, vol. 289-292, p. 601, 2009

Mangelinck D., Hoummada K., Blum I. Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si. Applied Physics Letters, vol. 95, p. 181902, 2009

Portavoce A., Lalmi B., Tréglia G., Girardeaux C., Mangelinck D., Aufray B., Bernardini J. Subnanometric Si film reactive diffusion on Ni. Applied Physics Letters, vol. 95, p. 023111, 2009

Portavoce A., Mangelinck D., Simola R., Daineche R., Bernardini J.- Atom redistribution during co-doped amorphous silicon crystallization. Defect and Diffusion Forum, vol. 289-292, p. 329, 2009

Portavoce A., Rodriguez N., Daineche R., Grosjean C., Girardeaux C. Correction of secondary ion mass spectrometry profiles for atom diffusion measurements. Materials Letters, vol. 63, p. 676, 2009

Saidi D., B. Zaid, N. Boutarek, N. Bacha, A. Si Ahmed, J. P. Bibérian. Qualitative evaluation of the germination frequency in Zr-Fe binary alloy. Measurement, vol. 43, n° 2, p. 204-209, 2009

Xu.M, G. Regula, R.Daineche, E.Olivier, B. Hakim, E.Ntsoenzok , B.Pichaud. Effect of Si and He implantation in the formation of ultra shallow junctions in Si. Thin Solid Films, October 2009