© Luc Favre - Im2np / CNRS

GDR Pulse

Newsletter 2   |   March 2015
Contents
Recently Published
Of Interest for the Epitaxy Community
Upcoming Events
Job Opportunities / Research
Sponsors Messages
ALTEC Equipment
Modular EpiCentre Deposition Stage for MBE applications: the EC-I series is the latest model in the very successful range of EpiCentre stages, providing state-of-the-art performance for various growth and deposition techniques including MBE, sputtering and CVD... [More]
Ircon
Ircon extends Modline 7 series by two new infrared thermometers and a new processor box. The new 7V line has been especially designed for the semiconductor industry, while the 75 series now comprises a new high temperature model dedicated to heat treating and annealing... [More]
LayTec
LayTec is a market leader of integrated metrology for thin-film deposition and other high value generating processes. LayTec?s equipment is used in a broad range of applications like optoelectronics, electronics, PV, displays, optics and photonics, SEMI and flash memory production, automotive industry and others. Our latest news: EpiCurve®, EpiCurve® TT, EpiTT... [More]
Riber
Riber has launched the new Compact 21 Discover 3-inch substrate MBE research system. The entire vacuum hardware of the Compact 21 Discover is conveniently presented in a fully open way to permit a unique 360° access to the system for easy cell filling, maintenance and new accessory additions.... [More]
Tescan Orsay Holding
TESCAN ORSAY HOLDING group develops SEM and DualBeam for semiconductor applications, in particular:
  • MAIA and GAIA: FEG SEM and DualBeam based on an immersion electronic column (for higher resolution at low voltage)
  • New GM large chamber with stage able to accommodate 12" wafers
  • New softwares dedicated to semiconductors
  • New accessories included into the SEM (FIB): AFM , TOF -SIMS , laser interferometer stage...
[More]

ALTEC Equipment
Annealsys


Ircon
Raytex
Riber
Tescan Orsay Holding

Recently Published
Monocrystalline Silicon-Based Mie Resonators
Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting
M. Abbarchi et al.
We report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates... [More]
InAs/AlGaSb
Selective area epitaxy of InAs/AlGaSb tunnel diodes
L. Desplanque et al.
In this study, selective area (SA) growth of InAs by molecular beam epitaxy (MBE) is used to define small area near broken gap AlGaSb/InAs tunnel diodes grown on a GaSb:p+ (001) substrate... [More]
Dewetting of Si(001) and Ge(001) thin films
Nonequilibrium diffusion of reactive solid islands
 F. Leroy, Y. Saito, F. Cheynis, E. Bussmann, O. Pierre-Louis, P. Müller
In this paper we report on the combined effects of reactivity, wetting, and shape changes on the random motion of crystalline Si islands on amorphous SiO2 substrates during annealing. For this purpose nanoparticle motion and size evolution are studied both experimentally (in situ and real time experiments) and theoretically (kinetic Monte Carlo simulations (KMC) including chemical reactivity)... [More]
Dewetting of Si(001) and Ge(001) thin films
LEEM study of the dynamics of solid state dewetting
 F. Leroy, F. Cheynis, P. Müller
Using low-energy electron microscopy (LEEM), we have studied, in-situ and in real time, the dewetting of Si(001) and Ge(001) thin films on amorphous silicon dioxide substrates... [More]
Low Temperature Epitaxy
Low Temperature Epitaxy in a Plasma Enhanced Chemical Vapor Deposition environment
 LPICM
Can we grow epitaxial silicon films at low temperature (~200 °C) in a PECVD environment? the most common answer is: no. Still, this is what researchers at LPICM have been convincingly doing over the past years... [More]
High quality (11-22) semipolar GaN
High quality (11-22) semipolar GaN nearly free of basal stacking faults grown on 2 in. patterned sapphire substrate by MOCVD
F. Tendille et al.
High quality semipolar (11-22) GaN layers have been achieved by MOCVD on 2 -in. sapphire wafers by performing the selective area growth of GaN nitride from the inclined c-facets of a patterned sapphire substrate (PSS)... [More]


Of Interest for the Epitaxy Community
Equipement disposal: X-Ray Diffractometer Seifert DRX 3003-PTS
Diffractometer currently in use. Good general condition. From 1997. 10 month X-ray Tube.
High Resolution X-Ray diffractomer equipped with a Gobel mirror, 2 or 4 bounce Ge (220) monochomator or 2 or 4 bounce Ge (440) monochomator, a 2 bounce Ge(220) analyzer, a 0.24° long plate collimator, a 4-axis goniometer (2theta up to 165°, phi 360°, chi -90°-90°). Possibility to perform Bond measurements with the detector at negative 2theta positions. Collimator for pole figures. Regularly controlled by Seifert technical service.
Future owner will be responsible for the removal costs
Contacts: NPSC: &-8221;Nanophysique et Semiconducteur&-8221; Group - Institut Néel-CNRS and INAC&-8211;CEA, Grenoble

Joint laboratory Annealsys and Institut des Nanotechnologies de Lyon for CVD/ALD process development
Annealsys is pleased to announce the creation of a joint laboratory (InCVD) with Institut des Nanotechnologies de Lyon (INL - UMR CNRS 5270) supported by the French National Research Agency (ANR: Agence Nationale de la Recherche). The InCVD laboratory is dedicated to innovating chemical vapor deposition processes and associated materials and will be directed by Dr Catherine Dubourdieu (INL) in association with Dr Jean-Manuel Decams (Annealsys)... [More]

New epitaxy equipment at NanoTecMat technological platform
A silicon-germanium MBE equipment (SG800 from DCA Instruments) was recently installed at NanoTecMat technological platform. This MBE chamber is designed for 200mm wafer size. It is connected to a cluster tool type UHV central distribution chamber allowing future expansion with additional growth chambers, analysis chambers or other processing chambers... [More]


Upcoming Events
28 th SYMPOSIUM ON SURFACE SCIENCE 2015
 Sunday, March 22 - Saturday, March 28, 2015
Les Arcs 1800, Bourg Saint Maurice, France
Organizers: P. Müller, G. Renaud, F. Leroy, F. Cheynis and S. Curiotto
All information and online-registration is provided on the web page: http://www.cinam.univ-mrs.fr/3s15

2015 Compound Semiconductor Week (CSW)
June 28th to July 2nd, 2015
Santa Barbara, California, USA
Organizers: U. Mishra, D. Huffaker, K. Choquette and T. Palacios
As in previous editions, the 2015 Compound Semiconductor Week will be the common venue for the 42nd International Symposium on Compound Semiconductors (ISCS), and the 27th International Conference on Indium Phosphide and Related Materials (IPRM).
More information about the conference and the submission process can be found on the web page: http://csw2015.ece.ucsb.edu

XXIIIe Congres General Société Française de Physique
August 24th to 28th, 2015
Strasbourg, France
Colloque 18: "Capillarite: du macroscopique au nanoscopique" (pdf)
Organizers: T. Frisch, P. Muller, A. Pocheau, O. Pierre-Louis, M. Plapp and Y. Pomeau
More information about the conference: http://sfp2015.fr/

2015 PULSE Summer School
September 14th to 18th, 2015
Porquerolles, France
Organizers: J.-N. Aqua, I. Berbezier, C. Fontaine and N. Gogneau
The school is dedicated to PhD students, young but also junior scientists. It will provide both a reminder of the basic understanding of epitaxy together with a description of its modern applications.
You will find all the details about this school on http://pulse-school.sciencesconf.org


Job Opportunities / Research
PhD Position - LAAS (Toulouse, France)
This research proposal aims at growing gold-free nanowires on silicon in the <001> direction using new nanotechnology advances.
The research work will be conducted in the MPN group of the LAAS-CNRS under the  supervision of Dr. Sebastien Plissard. The PhD candidate will benefit from the state of the art clean-room environment of the lab, and from the broad knowledge of the group in the fields of nanoelectronics, nanowire growth, nano fabrication and material characterization. The project is funded by the French Ministry of Higher Education and Research and should start
around October 2015... [More]
Title: "Bottom Up" Integration of High Mobility III-V Nanowires on Silicon
Laboratory: LAAS, UMR CNRS, Paul Sabatier University, Toulouse, France
Contact: sebastien.plissard@laas.fr

Postdoctoral Position - CINaM (Marseille, France)
This proposal for a post-doc position is supported by the French Agency for Research.
The main goal of our project is to develop a basic understanding of the statics and dynamics of solid-solid-vacuum triple lines via a study of the dynamics of dewetting of a thin film. More precisely we want to tackle two problems (i) the influence of chemical reactivity at the triple line and (ii) the role of substrate heterogeneity (topographical or chemical) on the triple line behaviour... [More]
Title: Triple-line dynamics and solid-state dewetting
Keywords: Dewetting, Thin films, LEEM, Atomic probes
Duration: 18 mois
Laboratory: CINaM, UMR CNRS, Marseille, France
Contact: muller@cinam.univ-mrs.fr



© Luc Favre, Im2np & GDR CNRS Pulse

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