© Luc Favre - IM2NP / CNRS

GDR Pulse

Newsletter 3   |   November 2015

Contents
Recently Published
Upcoming Events
Job Opportunities / Research
Sponsors Messages
AnnealSys
Annealsys introduces the Zenith 100 high temperature rapid thermal processing furnace that can process 100 mm wafers up to 2000°C. The process chamber with low inertia heating elements allows performing fast annealing processes at high temperature for generation of graphene by sublimation or by CVD and for implantation annealing of silicon carbide wafers. [More]
LayTec
LayTec is a market leader of integrated metrology for thin-film deposition and other high value generating processes. Follow Laytec's news thanks to their monthly newsletter [More]
Riber
In 2015 Riber sold three Research Compact 21 MBE systems in France serving broad range of applications such:
  • Magnetic memories
  • Terahertz lasers
  • Photovoltaic
[More]
Tescan Orsay Holding
Newly developed in a consortium joining companies Orsay Physics, Riber SA and laboratories CNRS IM2NP and LAAS, NanoSpace is a dual-beam microscope intended to be directly connected to any MBE system. It allows in-situ surface characterization, direct nano-machining in ultra-clean UHV environment. The direct connection permits a re-start of the growth in the MBE chamber after FIB patterning or high resolution observation. [More]

ALTEC Equipment
Annealsys


Ircon
Raytex
Riber
Tescan Orsay Holding

Recently Published
AFM surface morphology of a GaN film
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Y. Cordier et al.
The achievement of thick high quality GaN films with a high growth rate and low temperature technique is an advantage for integration with other materials. In this view, new high density nitrogen radical sources (HDRS) are developed to provide the necessary features for the plasma MBE growth of GaN. In this paper, we study the behavior of an inductively coupled plasma HDRS and the resulting material properties. [Full abstract] [Online article]
Solid-Liquid-Solid nanowire formation
In-Plane Si Nanowire Growth Mechanism in Absence of External Si Flux
S. Curiotto et al.
Here we report on a new mechanism of solid-liquid-solid (SLS) nanowire formation: a liquid eutectic droplet AuSi deposited on a Si substrate captures Au from a vapor, spontaneously moves on the surface resulting in the formation of a Si nanowire behind the moving droplet. [Full abstract] [Online article]
Dark-field STEM cross-section
Kinetics and Energetics of Ge Condensation in SiGe Oxidation
T. David et al.
In this study, we address the mechanism of formation of Ge-rich layers and we determine the major driving forces of the enrichment process. We highlight the particular role played by the Si0.5 Ge0.5 which is stabilized for various experimental conditions and strain levels. [Full abstract] [Online article]
Low-energy electron microscopy (LEEM) image
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
R. Ribeiro-Palau et al.
Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. [Online article]


Upcoming Events
Journées Surfaces et Interfaces (30ème édition)
January 27th - 29th, 2016
Marseille, France
Scientific committee: P. Allongue, P. Andreazza, D. Babonneau, M.-P. Besland, A. Coati, N. Combe, G. Grenet, E. Lacaze, P. Müller, V. Repain, N. Rougemaille and P. Sonnet
Ce colloque fait le point chaque année dans le domaine de la physico-chimie des surfaces et des interfaces. Sont abordées des thématiques diverses allant de la structure et de la morphologie des surfaces/interfaces jusqu'aux propriétés électriques, magnétiques, mécaniques, optiques en passant par la réactivité à l?échelle micro et nano-métrique. De par l'importance des surfaces et des interfaces dans les nanostructures, les nanosciences trouvent naturellement une place de choix dans ce colloque.
More information about the conference: http://www.cinam.univ-mrs.fr/jsi2016/index.php?page=accueil


E-MRS Spring Meeting: Symposium K
Group IV semiconductors materials research - growth, characterization and applications to electronics and spintronics
May 2nd - 6th, 2016
Lille, France
Organizers: D. Yang, G Kissinger, H. Yamada-Kaneta, J. Vanhellemont and L. Miglio
This symposium will include, but will not be exclusively limited to, the following topics: Crystal growth, Heteroepitaxy on silicon, Epitaxial growth of group IV semiconductors, Thin layer technology, Basic research on point defects and extended defects, Gettering and defect engineering, Technological applications for group IV semiconductors, Fundamental and applications of Group IV spintronics.
More information about the conference: http://www.european-mrs.com/2016-spring-symposium-k-european-materials-research-society


E-MRS Spring Meeting: Symposium L
Wide bandgap materials for electron devices
May 2nd - 6th, 2016
Lille, France
Organizers: D. Alquier, K. Zekentes and Y. Cordier
Hot topics to be covered by the symposium: SiC homoepitaxy on low-offcut substrates, III-N on silicon : nucleation layer, interface control, Thermal issues in GaN and oxide devices, Integrating Graphene with Nitrides or SiC (direct growth, layer transfer), Selective area growth for new device architectures, Wide-bandgap materials for high performance power inverters, Wide-bandgap materials for MEMS and NEMS, p-type doping by implantation.
More information about the conference: http://www.european-mrs.com/2016-spring-symposium-l-european-materials-research-society


ELSPEC' 2016
7e conference francophone sur les spectroscopies d'électrons
May 22nd - 27th, 2016
Meudon, France
Organizers: D. Aureau, N. Barrett, M. Bouttemy, A. Etcheberry, J.-M. Lameille, V. Roscol and J. Vigneron
Cette conférence s'adresse à toute la communauté des scientifiques des organismes de recherche et des grands domaines de l'industrie qui utilisent les spectroscopies d?électrons. Toutes les thématiques des sciences des matériaux seront directement abordées (métallurgie, céramiques, verres, matériaux organiques, composites, films minces, catalyseurs, biomatériaux, matériaux de la microélectronique, nanotechnologies ?) ainsi que leurs utilisations dans divers domaines de la recherche industrielle (Optoelectronique, automobile, aéronautique, environnement, énergie renouvelable, énergie nucléaire, patrimoine, etc).
More information about the conference: http://elspec.org/


ISSCG-16
The 16th International Summer School on Crystal Growth
August 1st - 7th, 2016
Lake Biwa, Shiga, Japan
Organizers: G. Sazaki, H. Nada, S. Naritsuka, T. Ohachi, K. Nagashima, T. Nakada and N. Ohtani
Researchers who are playing active roles in frontiers of wide-ranging fields of crystal growth will give lectures on a wide array of topics. Students will therefore have an opportunity to systematically learn about crystal growth from its fundamentals to its application. In addition, we are also planning to hold experimental courses and poster presentations. We cordially invite you to join the stimulating summer school under the friendly and at-home atmosphere.
More information about this school: http://www.iccge18.jp/isscg16/


Job Opportunities / Research
PhD Position
Title: "Theoretical study of the growth of core-shell nanowires"
Laboratory: INSP, Pierre et Marie Curie University, Paris, France
Key words: Nanowire, Growth, Elasticity, Molecular Beam Epitaxy
The goal of this thesis is to study theoretically the growth of core-shell nanowires.
To describe core-shell nanowires, one will first characterize the elastic interactions. This may be done using a decomposition over the appropriate eigenfunctions of the equilibrium equations with appropriate boundary conditions. The description of the instability within a linear framework will be done analytically. The evolution of the surface at large time, where quantum dots arise on the shell, will then be investigated using possibly one or two frameworks. [More]
Contact: aqua@insp.jussieu.fr

Postdoctoral Position
Title: "Low-dimension III-V nanostructures grown by MBE on surfaces nanopatterned in situ by focused ion beam"
Duration: 12 months
Laboratory: LAAS-CNRS, Toulouse, France
The young researcher will take part in the experimental validation and in the development of the ultrahigh vacuum FIB platform, and on the demonstration of its capabilities when coupled to the MBE system. Gain in process cleanliness and pattern positioning accuracy will be demonstrated and compared to ex situ patterning processes. [More]
Contact: chantal.fontaine@laas.fr

Postdoctoral Position Candidate
Name: Jamal Belhadi
Title: Doctor of physics
Thesis title: "Strain, ferroelectricity and phase transitions in thin films and superlattices based on the ferroelectric BaTiO3 and the paraelectric BaZrO3"
[Curriculum Vitae]
[Covering letter]
Contact: jbelhadi@yahoo.fr



© Luc Favre, Im2np & GDR CNRS Pulse



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