© Luc Favre - Im2np / CNRS

GDR Pulse

Newsletter 1   |   December 2014

Contents
Recently Published
Of Interest for the Epitaxy Community
Upcoming Events
Job Opportunities / Research
Sponsors Messages
ALTEC Equipment
Modular EpiCentre Deposition Stage for MBE applications: the EC-I series is the latest model in the very successful range of EpiCentre stages, providing state-of-the-art performance for various growth and deposition techniques including MBE, sputtering and CVD... [More]
Ircon
Ircon extends Modline 7 series by two new infrared thermometers and a new processor box. The new 7V line has been especially designed for the semiconductor industry, while the 75 series now comprises a new high temperature model dedicated to heat treating and annealing... [More]
Riber
Riber has launched the new Compact 21 Discover 3-inch substrate MBE research system. The entire vacuum hardware of the Compact 21 Discover is conveniently presented in a fully open way to permit a unique 360° access to the system for easy cell filling, maintenance and new accessory additions.... [More]
Tescan Orsay Holding
TESCAN ORSAY HOLDING group develops SEM and DualBeam for semiconductor applications, in particular:
  • MAIA and GAIA: FEG SEM and DualBeam based on an immersion electronic column (for higher resolution at low voltage)
  • New GM large chamber with stage able to accommodate 12" wafers
  • New softwares dedicated to semiconductors
  • New accessories included into the SEM (FIB): AFM , TOF -SIMS , laser interferometer stage...
[More]

ALTEC Equipment
Annealsys


Ircon
Raytex
Riber
Tescan Orsay Holding

Recently Published
Monocrystalline Silicon-Based Mie Resonators
Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting
M. Abbarchi et al.
We report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates... [More]
InAs/AlGaSb
Selective area epitaxy of InAs/AlGaSb tunnel diodes
L. Desplanque et al.
In this study, selective area (SA) growth of InAs by molecular beam epitaxy (MBE) is used to define small area near broken gap AlGaSb/InAs tunnel diodes grown on a GaSb:p+ (001) substrate... [More]
Dewetting of Si(001) and Ge(001) thin films
LEEM study of the dynamics of solid state dewetting
 F. Leroy, F. Cheynis, P. Muller
Using low-energy electron microscopy (LEEM), we have studied, in-situ and in real time, the dewetting of Si(001) and Ge(001) thin films on amorphous silicon dioxide substrates... [More]
Low Temperature Epitaxy
Low Temperature Epitaxy in a Plasma Enhanced Chemical Vapor Deposition environment
 LPICM
Can we grow epitaxial silicon films at low temperature (~200 °C) in a PECVD environment? the most common answer is: no. Still, this is what researchers at LPICM have been convincingly doing over the past years... [More]
High quality (11-22) semipolar GaN
High quality (11-22) semipolar GaN nearly free of basal stacking faults grown on 2 in. patterned sapphire substrate by MOCVD
F. Tendille et al.
High quality semipolar (11-22) GaN layers have been achieved by MOCVD on 2 -in. sapphire wafers by performing the selective area growth of GaN nitride from the inclined c-facets of a patterned sapphire substrate (PSS)... [More]


Of Interest for the Epitaxy Community
Joint laboratory Annealsys and Institut des Nanotechnologies de Lyon for CVD/ALD process development
Annealsys is pleased to announce the creation of a joint laboratory (InCVD) with Institut des Nanotechnologies de Lyon (INL - UMR CNRS 5270) supported by the French National Research Agency (ANR: Agence Nationale de la Recherche). The InCVD laboratory is dedicated to innovating chemical vapor deposition processes and associated materials and will be directed by Dr Catherine Dubourdieu (INL) in association with Dr Jean-Manuel Decams (Annealsys)... [More]

New epitaxy equipment at NanoTecMat technological platform
A silicon-germanium MBE equipment (SG800 from DCA Instruments) was recently installed at NanoTecMat technological platform. This MBE chamber is designed for 200mm wafer size. It is connected to a cluster tool type UHV central distribution chamber allowing future expansion with additional growth chambers, analysis chambers or other processing chambers... [More]


Upcoming Events
28 th SYMPOSIUM ON SURFACE SCIENCE 2015
 Sunday, March 22 - Saturday, March 28, 2015
Les Arcs 1800, Bourg Saint Maurice, France
Organizers: P. Muller, G. Renaud, F. Leroy, F. Cheynis and S. Curiotto
All information and online-registration is provided on the web page: http://www.cinam.univ-mrs.fr/3s15


Job Opportunities / Research
Postdoctoral Position - CINaM
This proposal for a post-doc position is supported by the French Agency for Research.
The main goal of our project is to develop a basic understanding of the statics and dynamics of solid-solid-vacuum triple lines via a study of the dynamics of dewetting of a thin film. More precisely we want to tackle two problems (i) the influence of chemical reactivity at the triple line and (ii) the role of substrate heterogeneity (topographical or chemical) on the triple line behaviour... [More]
Title: Triple-line dynamics and solid-state dewetting
Keywords: Dewetting, Thin films, LEEM, Atomic probes
Duration: 18 mois
Laboratory: CINaM, UMR CNRS, Marseille, France
Contact: muller@cinam.univ-mrs.fr



© Luc Favre, Im2np & GDR CNRS Pulse

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