permanent
dominique.mangelinck_AT_im2np.fr
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Publications
| Publications |
|---|
| Fabriziofranco Morris Anak, Andrea Campos-Candela, Magali Gregoire, Adrien Estellon, Marc Lombard, Thomas Guyot, Sophie Guillemin, Dominique Mangelinck, Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: partial, laser, total, and unique anneal, Materials Science in Semiconductor Processing, 2025, 184, pp.108806 (10.1016/j.mssp.2024.108806) (hal-04789456) |
| Loïc Patout, Claude Alfonso, Marion Descoins, Frank Fournel, Dominique Mangelinck, Nathalie Mangelinck-Noël, Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle : a TEM characterization, Materials Science in Semiconductor Processing, 2024, 184 () (hal-04683755) |
| H Khelidj, Alain Portavoce, Khalid Hoummada, Maxime Bertoglio, Mohamed Cherif Benoudia, M Descoins, Dominique Mangelinck, Nickel stanogermanides thin films: Phases formation, kinetics, and Sn segregation, Journal of Applied Physics, 2024, 136 (10.1063/5.0220979) (cea-04788255) |
| Réda Guelladress, Sébastien Kerdilès, Mélanie Dartois, Chiara Sabbione, Magali Gregoire, Dominique Mangelinck, C54-TiSi$_2$ formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks, Thin Solid Films, 2024, 798, pp.140386 (10.1016/j.tsf.2024.140386) (cea-04770913) |
| C. Delwail, K. Dabertrand, S. Joblot, F. Mazen, Dominique Mangelinck, Nanoscale effect on the formation of the amorphous Ni silicide by rapid thermal annealing from crystalline and pre-amorphized silicon, Acta Materialia, 2024, 262, pp.119430 (10.1016/j.actamat.2023.119430) (hal-04285181) |
| V Bonito Oliva, Dominique Mangelinck, S Hagedorn, H Bracht, Klaus Irmscher, C Hartmann, Philippe Vennéguès, Martin Albrecht, Silicon diffusion in AlN, Journal of Applied Physics, 2023, 134 (10.1063/5.0159641) (hal-04285030) |
| Andréa Newman, Andrea Campos, David Pujol, Pascal Fornara, Magali Gregoire, Dominique Mangelinck, Influence of Si surface preparation on CoSi2 formation and agglomeration, Materials Science in Semiconductor Processing, 2023, 162, pp.107488 (10.1016/j.mssp.2023.107488) (hal-04285750) |
| M. Grégoire, F. Morris Anak, S. Verdier, K. Dabertrand, S. Guillemin, Dominique Mangelinck, On the influence of Ni(Pt)Si thin film formation on agglomeration threshold temperature and its impact on 3D imaging technology integration, Microelectronic Engineering, 2023, 271-272, pp.111937 (10.1016/j.mee.2023.111937) (hal-04285798) |
| Myriam Dumont, Nikolas Mavrikakis, Wahib Saikaly, Dominique Mangelinck, Kinetics of static recrystallization in Sn-added Fe-Si alloys, Metallurgical Research & Technology, 2023, 120, pp.509 (10.1051/metal/2023067) (hal-04227597) |
| Khalid Hoummada, Franck Dahlem, Federico Panciera, Etienne Bustarret, C. Marcenat, Dominique Débarre, Youssef El Amraoui, Dominique Mangelinck, Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field, European Physical Journal: Applied Physics, 2023, 98, pp.40 (10.1051/epjap/2023230018) (hal-04124377) |
| N. Mavrikakis, W. Saikaly, P.R. Calvillo, A.P.C. Campos, S. Jacomet, Nathalie Bozzolo, Dominique Mangelinck, M. Dumont, How Sn addition influences texture development in single-phase Fe alloys: Correlation between local chemical information, microstructure and recrystallisation, Materials Characterization, 2022, 190, pp.112072 (10.1016/j.matchar.2022.112072) (hal-03858777) |
| N. Mavrikakis, W. Saikaly, Nathalie Bozzolo, Dominique Mangelinck, Myriam Dumont, The role of nano-segregation in the evolution of {411}<148> recrystallization texture in ferritic alloys, Texture & Anisotropy workshop 2022, 2022 () (hal-03875048) |
| C. Delwail, S. Joblot, F. Mazen, F. Abbate, L. Lachal, F. Milesi, M. Bertoglio, A.M. Papon, M. Gregoire, P.H. Rodriguez, D. Mangelinck, Dominique Mangelinck, Impact of the pre amorphization by Ge implantation on Ni$_{0.9}$Pt$_{0.1}$ silicide, Microelectronic Engineering, 2022, 254, pp.111705 (10.1016/j.mee.2021.111705) (hal-03863804) |
| Jianbao Gao, Annie Malchère, Shenglan Yang, Andrea Campos, Ting Luo, Khalid Quertite, Philippe Steyer, Christophe Girardeaux, Lijun Zhang, Dominique Mangelinck, Dewetting of Ni silicide thin film on Si substrate: In-situ experimental study and phase-field modeling, Acta Materialia, 2022, 223, pp.117491 (10.1016/j.actamat.2021.117491) (hal-03454993) |
| Stéphanie Jublot-Leclerc, Martin Owusu-Mensah, Vladimir A. Borodin, Joël Ribis, L. Largeau, Ryan Schoell, Djamel Kaoumi, Marion Descoins, Dominique Mangelinck, A. Gentils, Synthesis of Nano-Oxide Precipitates by Implantation of Ti, Y and O Ions in Fe-10%Cr: Towards an Understanding of Precipitation in Oxide Dispersion-Strengthened (ODS) Steels, Materials, 2022, 15, pp.4857 (10.3390/ma15144857) (hal-03758429) |
| Charlotte Dupressoire, Marion Descoins, Aurélie Vande Put, Enrica Epifano, Dominique Mangelinck, Philippe Emile, Daniel Monceau, The role of nitrogen in the oxidation behaviour of a Ti6242S alloy: a nanoscale investigation by atom probe tomography, Acta Materialia, 2021, 216, pp.117134 (10.1016/j.actamat.2021.117134) (hal-03431660) |
| Laura Esposito, Sebastien Kerdiles, Magali Gregoire, Dominique Mangelinck, Impact of Nanosecond Laser Annealing on the Formation of Titanium Silicides, 2021 20th International Workshop on Junction Technology (IWJT), 2021, pp.1-6 (10.23919/IWJT52818.2021.9609410) (hal-03454117) |
| Zhongji Sun, Xipeng Tan, Chengcheng Wang, Marion Descoins, Dominique Mangelinck, Shu Beng Tor, Eric Jägle, Stefan Zaefferer, Dierk Raabe, Reducing hot tearing by grain boundary segregation engineering in additive manufacturing: example of an AlxCoCrFeNi high-entropy alloy, Acta Materialia, 2021, 204, pp.116505 (10.1016/j.actamat.2020.116505) (hal-03059610) |
| Hannes Zschiesche, Claude Alfonso, Ahmed Charaï, Dominique Mangelinck, Effect of a Ti diffusion barrier on the cobalt silicide formation: solid solution, segregation and reactive diffusion, Acta Materialia, 2021, 204, pp.116504 (10.1016/j.actamat.2020.116504) (hal-03060141) |
| A. Portavoce, H. Khelidj, N. Oueldna, S. Amhil, M. Bertoglio, Dominique Mangelinck, L. Essaleh, K. Hoummada, Thermoelectric power factor of Ge1-xSnx thin films, Materialia, 2020, 14, pp.100873 (10.1016/j.mtla.2020.100873) (hal-03046444) |
| A. Portavoce, H. Khelidj, N. Oueldna, S. Amhil, M. Bertoglio, Dominique Mangelinck, L. Essaleh, K. Hoummada, Thermoelectric power factor of Ge1-Sn thin films, Materialia, 2020, 14, pp.100873 (10.1016/j.mtla.2020.100873) (hal-03066654) |
| H. Khelidj, A. Portavoce, M. Bertoglio, M. Descoins, L. Patout, K. Hoummada, A. Hallén, A. Charaï, M.C. Benoudia, Dominique Mangelinck, Ge(Sn) growth on Si(001) by magnetron sputtering, Materials Today Communications, 2020, pp.101915 (10.1016/j.mtcomm.2020.101915) (hal-03065804) |
| Mike El Kousseifi, Khalid Hoummada, Federico Panciera, Christian Lavoie, Dominique Mangelinck, Nucleation and lateral growth kinetics of the NiSi phase at the epitaxial θ-Ni2Si/Si interface, Acta Materialia, 2020, 198, pp.100-110 (10.1016/j.actamat.2020.07.062) (hal-02923017) |
| Hannes Zschiesche, Ahmed Charai, Claude Alfonso, Dominique Mangelinck, Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film, Journal of Materials Science, 2020, 55, pp.13177-13192 (10.1007/s10853-020-04856-4) (hal-03060639) |
| Laura Esposito, S. Kerdiles, M. Gregoire, P. Benigni, K. Dabertrand, Jean-Gabriel Mattei, Dominique Mangelinck, IMPACT OF NANOSECOND LASER ENERGY DENSITY ON THE C40-TiSi2 FORMATION AND C54-TiSi2 TRANSFORMATION TEMPERATURE., Journal of Applied Physics, 2020, 128, pp.085305 (10.1063/5.0016091) (hal-02922876) |
| David Zapico-Álvarez, Patrick Barges, Céline Musik, Florence Bertrand, Jean-Michel Mataigne, Marion Descoins, Dominique Mangelinck, Marie-Laurence Giorgi, Further Insight into Interfacial Interactions in Iron/Liquid Zn-Al System, Metallurgical and Materials Transactions A, 2020, 51, pp.2391-2403 (10.1007/s11661-020-05669-5) (hal-03071195) |
| Carine Perrin-Pellegrino, Myriam Dumont, Mohamed Fadel Keïta, Thomas Neisius, Georges Mikaelian, Dominique Mangelinck, Gaëlle Carlot, Philippe Maugis, Characterization by APT and TEM of Xe nano-bubbles in CeO 2, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2020, 469, pp.24-27 (10.1016/j.nimb.2020.02.032) (hal-03060510) |
| N. Mavrikakis, W. Saikaly, Dominique Mangelinck, M. Dumont, Segregation of Sn on migrating interfaces of ferrite recrystallisation: quantification through APT measurements and comparison with the solute drag theory, Materialia, 2020, 9, pp.100541 (10.1016/j.mtla.2019.100541) (hal-02403373) |
| Charlotte Dupressoire, M. Descoins, Aurélie Vande Put, Dominique Mangelinck, P. Emile, Daniel Monceau, The nitrogen effect on the oxidation behaviour of Ti6242S titanium-based alloy: contribution of atom probe tomography, MATEC Web of Conferences, 2020, 321, pp.06005 (10.1051/matecconf/202032106005) (hal-03452341) |
| H. Zschiesche, A.P.C. Campos, C. Dominici, L. Roussel, A. Charai, Dominique Mangelinck, C. Alfonso, Correlated TKD/EDS - TEM - APT analysis on selected interfaces of CoSi2 thin films, Ultramicroscopy, 2019, 206, pp.112807 (10.1016/j.ultramic.2019.06.007) (hal-02403191) |
| N. Mavrikakis, C. Detlefs, P.K. Cook, M. Kutsal, A.P.C. Campos, Melanie Gauvin, P.R. Calvillo, W. Saikaly, R. Hubert, H.F. Poulsen, Antoine Vaugeois, Héléna Zapolsky, Dominique Mangelinck, M. Dumont, C. Yildirim, A multi-scale study of the interaction of Sn solutes with dislocations during static recovery in α-Fe, Acta Materialia, 2019, 174, pp.92-104 (10.1016/j.actamat.2019.05.021) (hal-02403188) |
| P.W. Stankus, X.P. Tan, M. Descoins, Dominique Mangelinck, S.B. Tor, C.S. Lim, Revealing hot tearing mechanism for an additively manufactured high-entropy alloy via selective laser melting, Scripta Materialia, 2019, 168, pp.129-133 (10.1016/j.scriptamat.2019.04.036) (hal-02403163) |
| Dominique Mangelinck, Mechanisms of Silicide Formation by Reactive Diffusion in Thin Films, Diffusion foundations, 2019, 21, pp.1-28 (10.4028/www.scientific.net/DF.21.1) (hal-02403179) |
| T. Luo, Christophe Girardeaux, H. Bracht, Dominique Mangelinck, Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography, Acta Materialia, 2019, 165, pp.192-202 () (hal-02044750) |
| Hannes Zschiesche, Ahmed Charai, Dominique Mangelinck, Claude Alfonso, Ti segregation at CoSi grain boundaries, Microelectronic Engineering, 2019, 203-204, pp.1-5 (10.1016/j.mee.2018.10.009) (hal-02403172) |
| M. Lemang, Ph. Rodriguez, M. Gregoire, M. Juhel, B. Saidi, P. Gergaud, F. Nemouchi, Dominique Mangelinck, Redistribution of phosphorus during NiPtSi formation on in-situ doped Si, Microelectronic Engineering, 2018, 202, pp.25-30 (10.1016/j.mee.2018.10.005) (hal-02403309) |
| T. Luo, M. Bertoglio, Christophe Girardeaux, Dominique Mangelinck, Evolution of early formed NiSi2 during the reaction between Ni(W, Pt) films and Si (001), Micro and Nano Engineering, 2018, 1, pp.49-55 (10.1016/j.mne.2018.10.004) (hal-02044789) |
| Ph. Rodriguez, F. Deprat, C. Sésé, S. Zhiou, S. Favier, C. Fenouillet-Beranger, T. Luo, Dominique Mangelinck, P. Gergaud, F. Nemouchi, Phase formation sequence and cobalt behavior in the Ni0.9 Co0.1 system during the thin film solid-state formation, Microelectronic Engineering, 2018, 200, pp.19-25 (10.1016/j.mee.2018.08.006) (hal-02403223) |
| N Mavrikakis, P Calvillo, W. Saikaly, M. Descoins, Dominique Mangelinck, M. Dumont, Segregation affecting the evolution of primary recrystallization textures in a ternary Fe-Si-Sn alloy, IOP Conference Series: Materials Science and Engineering, 2018, 375, pp.012016 (10.1088/1757-899X/375/1/012016) (hal-02403202) |
| Dominique Mangelinck, T Luo, Christophe Girardeaux, Reactive diffusion in the presence of a diffusion barrier: experiment and model, Journal of Applied Physics, 2018, 123, pp.185301 (10.1063/1.5023578) (hal-01790347) |
| Dominique Mangelinck, T Luo, Christophe Girardeaux, Reactive diffusion in the presence of a diffusion barrier: experiment and model, Journal of Applied Physics, 2018 () (hal-03019073) |
| T. Südkamp, G. Hamdana, M. Descoins, Dominique Mangelinck, H. Wasisto, E. Peiner, H. Bracht, Self-diffusion in single crystalline silicon nanowires, Journal of Applied Physics, 2018, 123 (10.1063/1.4996987) (hal-01728694) |
| T. Luo, Dominique Mangelinck, M. Descoins, M. Bertoglio, N. Mouaici, A. Hallén, Christophe Girardeaux, Combined effect of Pt and W alloying elements on Ni-silicide formation, Journal of Applied Physics, 2018, 123, pp.125301 (10.1063/1.5020435) (hal-02044799) |
| L. Jablonka, T. Kubart, F. Gustavsson, M. Descoins, Dominique Mangelinck, S.-L. Zhang, K. Woschnagg, Improving the morphological stability of nickel germanide by tantalum and tungsten additions, Applied Physics Letters, 2018, 112, pp.103102 (10.1063/1.5019440) (hal-02403205) |
| M. Lemang, Ph. Rodriguez, F. Nemouchi, M. Juhel, M. Grégoire, Dominique Mangelinck, Redistribution of phosphorus during Ni 0.9 Pt 0.1 -based silicide formation on phosphorus implanted Si substrates, Journal of Applied Physics, 2018, 123 (10.1063/1.5020123) (hal-01728691) |
| X.P. Tan, P. Wang, Y. Kok, W.Q. Toh, P.W. Stankus, S.M.L. Nai, M. Descoins, Dominique Mangelinck, E. Liu, S.B. Tor, Carbide precipitation characteristics in additive manufacturing of Co-Cr-Mo alloy via selective electron beam melting, Scripta Materialia, 2018, 143, pp.117-121 (10.1016/j.scriptamat.2017.09.022) (hal-02403216) |
| Dominique Mangelinck, M. El Kousseifi, K. Hoummada, Federico Panciera, T. Epicier, Lateral growth of NiSi at the θ-Ni2Si/Si(100) interface: Experiments and modelling, Microelectronic Engineering, 2018, 199, pp.45-51 (10.1016/j.mee.2018.07.014) (hal-01916302) |
| Sylvie Doriot, Emilie Jouanny, Joël Malaplate, France Dalle, Lucien Allais, Thierry Millot, Marion Descoins, Dominique Mangelinck, Moukrane Dehmas, Evolution of defects in Ti6-4 under Ti2+ ion irradiation: Focus on radiation-induced precipitates, Journal of Nuclear Materials, 2018, 511, pp.264-276 (10.1016/j.jnucmat.2018.09.027) (hal-02066598) |
| Gerry Hamdana, Tobias Suedkamp, Marion Descoins, Dominique Mangelinck, Lorenzo Caccamo, Mails Bertke, Hutomo Suryo Wasisto, Hartmut Bracht, Erwin Peiner, Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography, Microelectronic Engineering, 2017, 179, pp.74-82 (10.1016/j.mee.2017.04.030) (hal-01694208) |
| G. Tellouche, A. Derafa, K. Hoummada, Dominique Mangelinck, Reaction paths of Ni rich phases: Effect of Ni thickness, Vacuum, 2017, 141, pp.259-264 (10.1016/j.vacuum.2017.03.019) (hal-01694210) |
| A. S. Zuruzi, D. Z. Chi, Dominique Mangelinck, Nitrogen enhanced thermal stability of nickel monosilicide, Physica Status Solidi A (applications and materials science), 2017, 214 (10.1002/pssa.201600710) (hal-01694196) |
| E. Bourjot, M. Gregoire, F. Nemouchi, Dominique Mangelinck, Thermal stability of Ni1-uPtu (0 < u < 0.15) germanosilicide, Journal of Applied Physics, 2017, 121 (10.1063/1.4979529) (hal-01694204) |
| Anthony de Luca, Alain Portavoce, Michael Texier, Nelly Burle, Dominique Mangelinck, Giovanni Isella, First stages of Ni reaction with the Si(Ge) alloy, Journal of Alloys and Compounds, 2017, 695, pp.2799-2811 (10.1016/j.jallcom.2016.11.307) (hal-01694483) |
| R. Milazzo, G. Impellizzeri, D. Piccinotti, D. de Salvador, A. Portavoce, A. La Magna, G. Fortunato, Dominique Mangelinck, V. Privitera, A. Carnera, E. Napolitani, Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing, Applied Physics Letters, 2017, 110, pp.011905 (10.1063/1.4973461) (hal-02385261) |
| Camille Flament, Joël Ribis, Jérôme Garnier, Yves Serruys, F. Leprêtre, A. Gentils, C. Baumier, M. Descoins, Dominique Mangelinck, A. Lopez, Kimberly Colas, Karl Buchanan, Patricia Donnadieu, Alexis Deschamps, Stability of β″ nano-phases in Al-Mg-Si(-Cu) alloy under high dose ion irradiation, Acta Materialia, 2017, 128, pp.64-76 (10.1016/j.actamat.2017.01.044) (hal-01555155) |
| Timothée Molière, Alexandre Jaffré, J Alvarez, Denis Mencaraglia, James P. Connolly, Laetitia Vincent, Géraldine Hallais, Dominique Mangelinck, Marion Descoins, Daniel Bouchier, Charles Renard, GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium, Journal of Applied Physics, 2017, 121, pp.035704 (10.1063/1.4974538) (hal-01444245) |
| C. Perrin, E. Ghegin, S. Zhiou, F. Nemouchi, P. Rodriguez, P. Gergaud, Philippe Maugis, Dominique Mangelinck, K. Hoummada, Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature, Applied Physics Letters, 2016, 109 (10.1063/1.4963132) (hal-01435222) |
| Mike El Kousseifi, Khalid Hoummada, M. Bertoglio, Dominique Mangelinck, Selection of the first Ni silicide phase by controlling the Pt incorporation in the intermixed layer, Acta Materialia, 2016, 106, pp.193-198 (10.1016/j.actamat.2016.01.004) (hal-01435136) |
| R. Milazzo, G. Impellizzeri, D. Piccinotti, A. La Magna, G. Fortunato, D. de Salvador, A. Carnera, A. Portavoce, Dominique Mangelinck, V. Privitera, E. Napolitani, Impurity and defect interactions during laser thermal annealing in Ge, Journal of Applied Physics, 2016, 119, pp.045702 (10.1063/1.4940737) (hal-02385285) |
| D. J. Larson, T. J. Prosa, D. E. Perea, K. Inoue, Dominique Mangelinck, Atom probe tomography of nanoscale electronic materials, MRS Bulletin, 2016, 41, pp.30-34 (10.1557/mrs.2015.308) (hal-01435099) |
| Xipeng Tan, Yihong Kok, Wei Quan Toh, Yu Jun Tan, Marion Descoins, Dominique Mangelinck, Shu Beng Tor, Kah Fai Leong, Chee Kai Chua, Revealing martensitic transformation and alpha/beta interface evolution in electron beam melting three-dimensional-printed Ti-6Al-4V, Scientific Reports, 2016, 6, pp.26039 (10.1038/srep26039) (hal-01435290) |
| Charrier Guillaume, Moukrane Dehmas, Marion Descoins, Dominique Mangelinck, Elisabeth Aeby-Gautier, Benoît Appolaire, Sandra Andrieu, Francis Soniak, Study of the Elemental Partitioning for Different Transformation Conditions in the Ti-5553 Alloy, Ti 2015 (the 13th World Conference on Titanium), 2015 (10.1002/9781119296126.ch88) (hal-01521863) |
| Fanny Mas, C. Tassin, Florence Robaut, Charlot Frédéric, Valle Nathalie, Dominique Mangelinck, Marion Descoins, François Roch, Patrick Todeschini, Yves Jm Brechet, Coupled carbon diffusion and precipitation in a dissimilar steel weld : 18MND5/309L, PTM 2015, International Conf. on solid-solid Phase Transformations in inorganic Materials, 2015 () (hal-01982305) |
| Mike El Kousseifi, Khalid Hoummada, Thierry Epicier, Dominique Mangelinck, Ni silicides formation: use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms., 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, pp.257-259 () (hal-01814294) |
| Dominique Mangelinck, Magali Putero, Marion Descoins, Carine Perrin-Pellegrino, Stability of GeTe-based phase change material stack under thermal stress: reaction with Ti studied by combined in-situ x-ray diffraction, sheet resistance and atom probe tomography, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, pp.71-73 (10.1109/IITC-MAM.2015.7325629) (hal-01951293) |
| M. El Kousseifi, K. Hoummada, T. Epicier, Dominique Mangelinck, Direct observation of NiSi lateral growth at the epitaxial θ-Ni<inf>2</inf>Si/Si(1 0 0) interface, Acta Materialia, 2015, 99, pp.1-6 (10.1016/j.actamat.2015.07.062) (hal-01804752) |
| Alain Portavoce, Khalid Hoummada, Antoine Ronda, Dominique Mangelinck, Isabelle Berbezier, Si/Ge intermixing during Ge Stranski–Krastanov growth, Beilstein Journal of Nanotechnology, 2014, 5, pp.2374-2382 (10.3762/bjnano.5.246) (hal-01239745) |
| X.P. Tan, Dominique Mangelinck, C. Perrin-Pellegrino, Luc Rougier, Charles-André Gandin, Alain Jacot, Damien Ponsen, Virginie Jaquet, Atom probe tomography of secondary γ′ precipitation in a single crystal Ni-based superalloy after isothermal aging at 1100 °c, Journal of Alloys and Compounds, 2014, 611, pp.389-394 (10.1016/j.jallcom.2014.05.132) (hal-01022688) |
| X.P. Tan, Dominique Mangelinck, Carine Perrin-Pellegrino, Luc Rougier, Charles-André Gandin, Alain Jacot, Damien Ponsen, Virginie Jaquet, Spinodal Decomposition Mechanism of γ′ Precipitation in a Single Crystal Ni-Based Superalloy, Metallurgical and Materials Transactions A, 2014, 45, pp.4725-4730 (10.1007/s11661-014-2506-8) (hal-01058164) |
| H. Benallali, T. Cremel, K. Hoummada, Dominique Mangelinck, Régis André, S. Tatarenko, Kuntheak Kheng, Atomic scale investigations on CdxZn1−xSe quantum dots: Correlation between the composition and emission properties, Applied Physics Letters, 2014, 105, pp.053103 (10.1063/1.4891635) (hal-01221881) |
| G. Tellouche-Derafa, K. Hoummada, A. Derafa, Ivan Blum, A. Portavoce, Dominique Mangelinck, Kinetics of growth and consumption of Ni rich phases, Microelectronic Engineering, 2014, 120, pp.146-149 (10.1016/j.mee.2013.12.015) (hal-02385327) |
| M. El Kousseifi, Federico Panciera, K. Hoummada, M. Descoins, T. Baron., Dominique Mangelinck, Ni silicide nanowires analysis by atom probe tomography, Microelectronic Engineering, 2014, 120, pp.47-51 (10.1016/j.mee.2013.12.011) (hal-01991913) |
| Dominique Mangelinck, Federico Panciera, K. Hoummada, M. El Kousseifi, C. Perrin, M. Descoins, A. Portavoce, Atom probe tomography for advanced metallization, Microelectronic Engineering, 2014, 120, pp.19-33 (10.1016/j.mee.2013.12.018) (hal-02385332) |
| J. Fouet, M. Texier, Marie‐ingrid Richard, A. Portavoce, Dominique Mangelinck, C. Guichet, N. Boudet, O. Thomas, Silicide formation during reaction between Ni ultra-thin films and Si(001) substrates, Materials Letters, 2014, 116, pp.139-142 (10.1016/j.matlet.2013.10.119) (hal-01331208) |
| C. Zheng, A. Gentils, Joël Ribis, O. Kaitasov, V.A. Borodin, M. Descoins, Dominique Mangelinck, The feasibility of Al-based oxide precipitation in Fe-10%Cr alloy by ion implantation, Philosophical Magazine, 2014, pp.2937-2955 (10.1080/14786435.2014.941028) (in2p3-01079120) |
| E. Bourjot, Magali Putero, C. Perrin-Pellegrino, P. Gergaud, Magali Gregoire, F. Nemouchi, Dominique Mangelinck, Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions, Microelectronic Engineering, 2014, 120, pp.163-167 (10.1016/j.mee.2013.12.009) (hal-01951263) |
| Dominique Mangelinck, K. Hoummada, Federico Panciera, M. El Kousseifi, Ivan Blum, M. Descoins, M. Bertoglio, A. Portavoce, Carine Perrin-Pellegrino, Magali Putero, Progress in the understanding of Ni silicide formation for advanced MOS structures, Physica Status Solidi A (applications and materials science), 2014, 211, pp.152-165 (10.1002/pssa.201300167) (hal-01951259) |
| Xipeng Tan, Carine Perrin-Pellegrino, Khalid Hoummada, Dominique Mangelinck, Aurélie Vande Put, Marie-Christine Lafont, Djar Oquab, Daniel Monceau, Atom probe tomographic study of L10 martensite in a Pt-modified NiCoCrAlYTa bond coating, Corrosion Science, 2013, 76, pp.1-5 (10.1016/j.corsci.2013.07.041) (hal-02141642) |
| Frederic Danoix, Jacques Lacaze, A. Gibert, Dominique Mangelinck, Khalid Hoummada, Eric Andrieu, Effect of external stress on the Fe–Cr phase separation in 15-5 PH and Fe–15Cr–5Ni alloys, Ultramicroscopy, 2013, vol. 132, pp.pp. 193-198 (10.1016/j.ultramic.2012.12.004) (hal-01170260) |
| Khalid Hoummada, Gamra Tellouche, Ivan Blum, Alain Portavoce, Marion Descoins, Dominique Mangelinck, Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact, Microelectronic Engineering, 2013, 107, pp.184-189 (10.1016/j.mee.2012.12.008) (hal-02385371) |
| O. Cojocaru-Mirédin, Fuccio Cristiano, Pier-Francesco Fazzini, Dominique Mangelinck, Didier Blavette, Extended defects and precipitation in heavily B-doped silicon, Thin Solid Films, 2013, 534, pp.62 - 66 (10.1016/j.tsf.2013.01.090) (hal-01921833) |
| Audrey Grockowiak, Thierry Klein, Etienne Bustarret, Jozef Kacmarcik, Christiane Dubois, Gilles Prudon, Khalid Hoummada, Dominique Mangelinck, Thierry Kociniewski, Dominique Débarre, Jacques Boulmer, C. Marcenat, Superconducting properties of laser annealed implanted Si:B epilayers, Superconductor Science and Technology, 2013, 26, pp.045009 (10.1088/0953-2048/26/4/045009) (hal-00853455) |
| Magali Putero, Benjamin Duployer, Ivan Blum, Toufik Ouled-Khachroum, Marie-Vanessa Coulet, Carine Perrin, Eric Ziegler, Dominique Mangelinck, Christophe Muller, Combined in situ x-ray scattering and electrical measurements for characterizing phase transformations in nanometric functional films, Thin Solid Films, 2013, 541, pp.21-27 (10.1016/j.tsf.2012.11.131) (hal-01951266) |
| Sebastien Y.P. Allain, Frederic Danoix, Mohamed Gouné, Khalid Hoummada, Dominique Mangelinck, Static and dynamical ageing processes at room temperature in a Fe25Ni0.4C virgin martensite : effect of C redistribution at the nanoscale, Philosophical Magazine Letters, 2013, 93, pp.68-76 (10.1080/09500839.2012.742590) (hal-00785227) |
| Khalid Hoummada, Franck Dahlem, Thierry Kociniewski, Jacques Boulmer, Christiane Dubois, Gilles Prudon, Etienne Bustarret, Hervé Courtois, Dominique Débarre, Dominique Mangelinck, Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography, Applied Physics Letters, 2012, 101, pp.182602 (10.1063/1.4760261) (hal-00760773) |
| F. Haidara, B. Duployer, Dominique Mangelinck, M. -C. Record, In-situ investigation of the icosahedral Al–Cu–Fe phase formation in thin films, Journal of Alloys and Compounds, 2012, 534, pp.47 - 51 (10.1016/j.jallcom.2012.04.036) (hal-01756356) |
| K. Hoummada, G. Tellouche, I.D. Blum, A. Portavoce, Dominique Mangelinck, Arsenic clustering during formation of the transient Ni silicide, Scripta Materialia, 2012, 67, pp.169-172 (10.1016/j.scriptamat.2012.04.009) (hal-02385397) |
| Lyacine Aloui, Thomas Duguet, Fanta Haidara, M. -C. Record, Diane Samélor, François Senocq, Dominique Mangelinck, Constantin Vahlas, Al–Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing, Applied Surface Science, 2012, 258, pp.6425-6430 (10.1016/j.apsusc.2012.03.053) (hal-01756334) |
| Fanta Haidara, M. -C. Record, Benjamin Duployer, Dominique Mangelinck, Investigation of reactive phase formation in the Al–Cu thin film systems, Surface and Coatings Technology, 2012, 206, pp.3851 - 3856 (10.1016/j.surfcoat.2012.01.065) (hal-01756324) |
| Fuccio Cristiano, Zahi Essa, Yang Qiul, Yohann Spiegel, Frank Torregrosa, Julian Duchaine, Pierre Boulenc, Clement Tavernier, Oana Cojocaru-Miredin, Didier Blavette, Dominique Mangelinck, Pier-Francesco Fazzini, Maurice Quillec, Mehdi Bazizi El, M. Haekenberg, Simona Boninelli, Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon, 12th International Workshop on Junction Technology (IWJT 2012), 2012, 2012-January, pp.1--7 (10.1109/IWJT.2012.6212827) (hal-01928869) |
| A. Portavoce, K. Hoummada, I. Berbezier, A. Ronda, Dominique Mangelinck, Ge atom distribution in buried dome islands, Applied Physics Letters, 2012, 100, pp.164105 (10.1063/1.4704150) (hal-02385403) |
| Alain Portavoce, Christophe Girardeaux, G. Tréglia, Jean Bernardini, Dominique Mangelinck, Lee Chow, Nanometric-Size Effect upon Diffusion and Reaction in Semiconductors: Experimental and Theoretical Investigations, Defect and Diffusion Forum, 2012, 323-325, pp.433-438 () (hal-02044905) |
| Alain Portavoce, Christophe Girardeaux, G. Tréglia, Jean Bernardini, Dominique Mangelinck, Lee Chow, Nanometric-Size Effect upon Diffusion and Reaction in Semiconductors: Experimental and Theoretical Investigations, Defect and Diffusion Forum, 2012, 323-325, pp.433-438 (10.4028/www.scientific.net/DDF.323-325.433) (hal-02393973) |
| Fanta Haidara, M. -C. Record, Benjamin Duployer, Dominique Mangelinck, Phase formation in Al–Fe thin film systems, Intermetallics, 2012, 23, pp.143 - 147 (10.1016/j.intermet.2011.11.017) (hal-01756352) |
| Ivan Blum, Alain Portavoce, Lee Chow, Khalid Hoummada, Dominique Mangelinck, Diffusion and Redistribution of Boron in Nickel Silicides, Defect and Diffusion Forum, 2012, 323-325, pp.415-420 (10.4028/www.scientific.net/DDF.323-325.415) (hal-02393983) |
| Fanta Haidara, Dominique Mangelinck, Benjamin Duployer, M. -C. Record, Phase formation of Al10Cu10Fe in thin films, Materials Chemistry and Physics, 2012, 133, pp.977 - 980 (10.1016/j.matchemphys.2012.01.127) (hal-01756418) |
| Fanta Haidara, M. -C. Record, Benjamin Duployer, Dominique Mangelinck, Solid state reactions in Al–Cu–Fe thin film systems, Intermetallics, 2012, 21, pp.62 - 66 (10.1016/j.intermet.2011.09.010) (hal-01756355) |
| Magali Putero, Dominique Mangelinck, Effect of Pd on the Ni(2)Si stress relaxation during the Ni-silicide formation at low temperature, Applied Physics Letters, 2012, 101, pp.11910 (10.1063/1.4752716) (hal-01951267) |
| A. Portavoce, Christophe Girardeaux, G. Tréglia, J. Bernardini, Dominique Mangelinck, L. Chow, Nanometric-size effect upon diffusion and reaction in semiconductors: experimental and theoretical investigations, Defect and Diffusion Forum, 2012, 323-325, pp.433-438 () (hal-00992908) |
| Alain Portavoce, G. Tréglia, Boubekeur Lalmi, Christophe Girardeaux, Dominique Mangelinck, Bernard Aufray, Jean Bernardini, Theoretical and Experimental Evidences of Sequential Phase Formation during Sub-Nanometric-Thick Film Reactive Diffusion, Solid State Phenomena, 2011, 172-174, pp.633-639 (10.4028/www.scientific.net/SSP.172-174.633) (hal-02393995) |
| Khalid Hoummada, Dominique Mangelinck, Alain Portavoce, Kinetic of Formation of Ni and Pd Silicides: Determination of Interfacial Mobility and Interdiffusion Coefficient by In Situ Techniques, Solid State Phenomena, 2011, 172-174, pp.640-645 (10.4028/www.scientific.net/SSP.172-174.640) (hal-02393989) |
| Alain Portavoce, G. Tréglia, Boubekeur Lalmi, Christophe Girardeaux, Dominique Mangelinck, Bernard Aufray, Jean Bernardini, Theoretical and Experimental Evidences of Sequential Phase Formation during Sub-Nanometric-Thick Film Reactive Diffusion, Solid State Phenomena, 2011, 172-174, pp.633-639 () (hal-02044914) |
| A. Portavoce, Ivan Blum, Dominique Mangelinck, K. Hoummada, L. Chow, V. Carron, J.L. Labar, Boron clustering in implanted NiSi, Scripta Materialia, 2011, 64, pp.828-831 (10.1016/j.scriptamat.2011.01.015) (hal-02385405) |
| Alain Portavoce, Ivan Blum, Lee Chow, Jean Bernardini, Dominique Mangelinck, Numerical Simulation Support for Diffusion Coefficient Measurements in Polycrystalline Thin Films, Defect and Diffusion Forum, 2011, 309-310, pp.63-72 (10.4028/www.scientific.net/DDF.309-310.63) (hal-02394011) |
| C. Perrin, K. Hoummada, Ivan Blum, A. Portavoce, M. Descoins, Dominique Mangelinck, Redistribution of Alloy Elements during Nickel Silicide Formation: Benefit of Atom Probe Tomography, Defect and Diffusion Forum, 2011, 309-310, pp.161-166 (10.4028/www.scientific.net/DDF.309-310.161) (hal-02394008) |
| Ivan Blum, Alain Portavoce, Khalid Hoummada, Gamra Tellouche, Lee Chow, Dominique Mangelinck, Véronique Carron, Dopant diffusivity and solubility in nickel silicides, physica status solidi (c), 2011, 8, pp.670-673 (10.1002/pssc.201000283) (hal-02385407) |
| A. Derafa, M. -C. Record, Dominique Mangelinck, R. Halimi, A. Bouabellou, Reactive diffusion in W–Mo–Si thin films, Journal of Thermal Analysis and Calorimetry, 2011, 103, pp.111 - 116 (10.1007/s10973-010-1136-7) (hal-01756411) |
| A. Portavoce, G. Tréglia, B. Lalmi, Christophe Girardeaux, Dominique Mangelinck, B. Aufray, J. Bernardini, Theoretical and experimental evidences of sequential phase formation during subnanometric-thick film reactive diffusion, Solid State Phenomena, 2011, 172-174, pp.633 () (hal-00696844) |
| K. Hoummada, Ivan Blum, Dominique Mangelinck, Alain Portavoce, Composition measurement of the Ni-silicide transient phase by atom probe tomography, Applied Physics Letters, 2010, 96, pp.261904 (10.1063/1.3457995) (hal-02386090) |
| Ivan Blum, Alain Portavoce, Dominique Mangelinck, Jean Bernardini, Khalid Hoummada, Rachid Daineche, János Lábár, Véronique Carron, Simultaneous Measurements of Lattice and Grain Boundary Diffusion Coefficients via 2-Dimensional Simulations, Defect and Diffusion Forum, 2010, 297-301, pp.978-983 (10.4028/www.scientific.net/DDF.297-301.978) (hal-02394022) |
| Dominique Mangelinck, Khalid Hoummada, Alain Portavoce, Carine Perrin, Rachid Daineche, Marion Descoins, David Larson, Peter Clifton, Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si, Scripta Materialia, 2010, 62, pp.568-571 (10.1016/j.scriptamat.2009.12.044) (hal-02386103) |
| Ivan Blum, Alain Portavoce, Dominique Mangelinck, R. Daineche, K. Hoummada, J.L. Labar, V. Carron, J. Bernardini, Measurement of As diffusivity in Ni2Si thin films, Microelectronic Engineering, 2010, 87, pp.263-266 (10.1016/j.mee.2009.05.020) (hal-02386115) |
| Ivan Blum, Alain Portavoce, L. Chow, Dominique Mangelinck, K. Hoummada, G. Tellouche, V. Carron, B diffusion in implanted Ni2Si and NiSi layers, Applied Physics Letters, 2010, 96, pp.054102 (10.1063/1.3303988) (hal-02386108) |
| O. Cojocaru-Mirédin, C. Perrin-Pellegrino, Dominique Mangelinck, Didier Blavette, Boron redistribution during reactive diffusion in Ni-Si contacts, Microelectronic Engineering, 2010, 87, pp.271--273 (10.1016/j.mee.2009.06.018) (hal-01928876) |
| Magali Putero, L. Ehouarne, E. Ziegler, Dominique Mangelinck, First silicide formed by reaction of Ni(13%Pt) films with Si(100): Nature and kinetics by in-situ X-ray reflectivity and diffraction, Scripta Materialia, 2010, 63, pp.24-27 (10.1016/j.scriptamat.2010.02.040) (hal-01951270) |
| A. Portavoce, B. Lalmi, G. Tréglia, Christophe Girardeaux, Dominique Mangelinck, B. Aufray, J. Bernardini, Subnanometric Si film reactive diffusion on Ni, Applied Physics Letters, 2009, 95, pp.023111 () (hal-02044925) |
| Alain Portavoce, B. Lalmi, G. Tréglia, C. Girardeaux, Dominique Mangelinck, B. Aufray, J. Bernardini, Subnanometric Si film reactive diffusion on Ni, Applied Physics Letters, 2009, 95, pp.023111 (10.1063/1.3177187) (hal-02386120) |
| O. Cojocaru-Mirédin, Emmanuel Cadel, Bernard Deconihout, Dominique Mangelinck, Didier Blavette, Three-dimensional atom mapping of boron in implanted silicon, Ultramicroscopy, 2009, 109, pp.649--653 (10.1016/j.ultramic.2008.09.008) (hal-01928878) |
| Alain Portavoce, Dominique Mangelinck, R Simola, R Daineche, J. Bernardini, Atom redistribution during co-doped amorphous silicon crystallization, Defect and Diffusion Forum, 2009, 289-292, pp.329-337 () (hal-02406667) |
| A. Portavoce, B. Lalmi, G. Tréglia, Christophe Girardeaux, Dominique Mangelinck, B. Aufray, J. Bernardini, Subnanometric Si film reactive diffusion on Ni, Applied Physics Letters, 2009, 95, pp.023111 () (hal-00413559) |
| O. Cojocaru-Mirédin, Emmanuel Cadel, Didier Blavette, Dominique Mangelinck, K. Hoummada, C. Genevois, Bernard Deconihout, Atomic-scale redistribution of Pt during reactive diffusion in Ni (5% Pt)-Si contacts, Ultramicroscopy, 2009, 109, pp.797--801 (10.1016/j.ultramic.2009.02.001) (hal-01928881) |
| O. Cojocaru-Mirédin, Emmanuel Cadel, François Vurpillot, Dominique Mangelinck, Didier Blavette, Three-dimensional atomic-scale imaging of boron clusters in implanted silicon, Scripta Materialia, 2009, 60, pp.285-288 (10.1016/j.scriptamat.2008.10.008) (hal-01953258) |
| O. Cojocaru-Miŕdin, Dominique Mangelinck, Didier Blavette, Nucleation of boron clusters in implanted silicon, Journal of Applied Physics, 2009, 106 (10.1063/1.3265998) (hal-01928877) |
| Ivan Blum, Alain Portavoce, Dominique Mangelinck, R. Daineche, K. Hoummada, J. Lábár, V. Carron, C. Perrin, Lattice and grain-boundary diffusion of As in Ni2Si, Journal of Applied Physics, 2008, 104, pp.114312 (10.1063/1.3035836) (hal-02386151) |
| Ivan Blum, A. Portavoce, Dominique Mangelinck, Rachid Daineche, K. Hoummada, János L. Lábár, V. Carron, C. Perrin, Lattice and grain-boundary diffusion of As in Ni2Si, Journal of Applied Physics, 2008, 104, pp.114312 (10.1063/1.3035836) (hal-02127829) |
| K. Hoummada, Alain Portavoce, C. Perrin-Pellegrino, Dominique Mangelinck, C. Bergman, Differential scanning calorimetry measurements of kinetic factors involved in salicide process, Applied Physics Letters, 2008, 92, pp.133109 (10.1063/1.2905293) (hal-02386166) |
| Philippe Pareige, Emmanuel Cadel, Xavier Sauvage, Bernard Deconihout, Didier Blavette, Dominique Mangelinck, Atomic resolution analyses of nano-structured materials by atom probe tomography, International Journal of Nanotechnology, 2008, 5, pp.592--608 (10.1504/IJNT.2008.018684) (hal-01928885) |
| Dominique Mangelinck, K. Hoummada, O. Cojocaru-Mirédin, Emmanuel Cadel, C. Perrin-Pellegrino, Didier Blavette, Atom probe tomography of Ni silicides: First stages of reaction and redistribution of Pt, Microelectronic Engineering, 2008, 85, pp.1995--1999 (10.1016/j.mee.2008.04.048) (hal-01928884) |
| K. Hoummada, Dominique Mangelinck, Emmanuel Cadel, C. Perrin-Pellegrino, Didier Blavette, Bernard Deconihout, Formation of Ni silicide at room temperature studied by laser atom probe tomography: Nucleation and lateral growth, Microelectronic Engineering, 2007, 84, pp.2517--2522 (10.1016/j.mee.2007.05.051) (hal-01928891) |
| O. Cojocaru-Mirédin, Dominique Mangelinck, K. Hoummada, Emmanuel Cadel, Didier Blavette, Bernard Deconihout, C. Perrin-Pellegrino, Snowplow effect and reactive diffusion in the Pt doped Ni-Si system, Scripta Materialia, 2007, 57, pp.373--376 (10.1016/j.scriptamat.2007.05.007) (hal-01928888) |
| Alain Portavoce, R Simola, Dominique Mangelinck, J. Bernardini, P. Fornara, Dopant diffusion during amorphous silicon crystallization, Defect and Diffusion Forum, 2007, 264, pp.33-38 () (hal-02406682) |
| F. Nemouchi, V. Carron, J. L. Lábár, Magali Putero, L. Ehouarne, B. Arrazat, Y. Morand, S. Descombes, J. P. Barnes, Dominique Mangelinck, Y. Campidelli, O. Kermarrec, Dopant effect on NiGe texture during nickel germanide growth, ECS Transactions, 2007, 6, pp.49-59 (10.1149/1.2812896) (hal-01951271) |
| K. Hoummada, Emmanuel Cadel, Dominique Mangelinck, C. Perrin-Pellegrino, Didier Blavette, Bernard Deconihout, First stages of the formation of Ni silicide by atom probe tomography, Applied Physics Letters, 2006, 89 (10.1063/1.2370501) (hal-01928898) |
| F. Nemouchi, Dominique Mangelinck, J. L. Labar, Magali Putero, C. Bergman, P. Gas, A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics, Microelectronic Engineering, 2006, 83, pp.2101-2106 (10.1016/j.mee.2006.09.014) (hal-01951273) |
| L. Ehouarne, Magali Putero, Dominique Mangelinck, F. Nemouchi, T. Bigault, E. Ziegler, R. Coppard, In situ study of the growth kinetics and interfacial roughness during the first stages of nickel-silicide formation, Microelectronic Engineering, 2006, 83, pp.2253-2257 (10.1016/j.mee.2006.10.014) (hal-01951272) |
| R. Simola, Dominique Mangelinck, Alain Portavoce, J. Bernardini, P. Fornara, Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon, AIP Conference Proceedings, 2006, 866 () (hal-02406692) |
| Didier Blavette, Emmanuel Cadel, Dominique Mangelinck, K. Hoummada, Rodrigue Lardé, François Vurpillot, Benjamin Klaes, Angela Vella, Philippe Pareige, Jonathan Houard, Bernard Deconihout, Laser atom probe tomography: Some applications, IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 2006, pp.61--62 (10.1109/IVNC.2006.335352) (hal-01928901) |
| P. Gas, C Girardeaux, Dominique Mangelinck, A. Portavoce, Reaction and diffusion at interfaces of micro- and nanostructured materials, Materials Science and Engineering: B, 2003, 101, pp.43-48 (10.1016/S0921-5107(02)00709-2) (hal-02393446) |
| P. Gas, Christophe Girardeaux, Dominique Mangelinck, P Portavoce, Reaction and diffusion at interfaces of micro- and nanostructured materials, Materials Science and Engineering: B, 2003, 101, pp.43-48 () (hal-02045023) |
| Dominique Mangelinck, P. Gas, T. Badéche, E. Taing, F. Nemouchi, C. Perrin-Pellegrino, Magali Putero, S. Niel, P. Fornara, J. M. Mirabel, L. Fares, P. H. Albarede, Formation of C49-TiSi2 in flash memories : a nucleation controlled phenomenon ?, Microelectronic Engineering, 2003, 70, pp.220-225 (10.1016/S0167-9317(03)00435-0) (hal-01951275) |
| I. Michael, J Valmalette, C. A. Muller, Cédric Leroux, A.A. Chaou, M. Lomello-Tafin, J. L. Rousset, Dominique Mangelinck, P. Gas, The reactive nanostructuration of ZrAu alloy: a new approach for synthesis of 2-4nm Au_ZrO2 nanostructures, EUROMAT 2003, European Congress an Advanced Materials and Processes, 1/09/03 - 5/09/03, 2003 () (hal-00011093) |
| Dominique Mangelinck, P. Gas, A. Grob, B. Pichaud, O. Thomas, Formation of Ni silicide from Ni(Au) films on $^{111}$Si, Journal of Applied Physics, 1996, 79, pp.4078-4086 () (in2p3-00015166) |
| Dominique Mangelinck, P. Gas, J. Gay, B. Pichaud, Effect of Gold on the Nickel/Silicon Thin Film Reaction, Journal de Physique IV Proceedings, 1996, 06, pp.C2-97-C2-102 (10.1051/jp4:1996213) (jpa-00254191) |