Soutenance de thèse de Giri Wahyu ALAM - 13/12/2018 - Influence of seeding and growth conditions on grain selection, defects, and properties of High-Performance Multicrystalline Silicon (HPmc-Si)

CEA Département des Technologies Solaires Lynx 4 Room 107, INES (Institut National de l’Energie Solaire) 50 avenue du Lac Léman, 73375 Le Bourget du Lac
 -

AVIS DE SOUTENANCE

Giri Wahyu ALAM

Soutiendra publiquement ses travaux de thèse intitulés 

"Influence of seeding and growth conditions on grain selection, defects, and properties of High-Performance Multicrystalline Silicon (HPmc-Si)"

 

Dirigés par Nathalie Mangelinck-Noël (IM2NP) et Etienne Pihan (CEA / INES) 

Soutenance prévue le jeudi 13 décembre 2018 à 10h30 


Lieu : CEA Département des Technologies Solaires Lynx 4 Room 107, INES (Institut National de l’Energie Solaire) 50 avenue du Lac Léman, 73375 Le Bourget du Lac

 

Composition du Jury   

                                                                   

Prof. Esidor NTSOENZOK, Professeur Université d’Orléans (Rapporteur)

Dr. Erwann FOURMOND, Maître de conférences HDR, INSA de Lyon (Rapporteur)

Dr. Myriam DUMONT, Maître de conférences HDR, AMU, Marseille (Examinatrice)

Dr. Amal CHABLI, Directrice de recherche CEA (Examinatrice)

Dr. Nandang SUHENDRA, Ingénieur de recherche BPPT, Indonésie (Examinateur)

Prof. Yves FAUTRELLE, Professeur émérite INPG, Grenoble (Examinateur)

 

Dr. Etienne PIHAN, Ingénieur-Chercheur CEA/INES (Superviseur à l’INES)

Dr. Nathalie MANGELINCK-NOEL, Directrice de recherche CNRS (Directrice de thèse)



Mots clés : Crystalline silicon, Defects, Grains, HPmc-Si, Photovoltaic (PV), Impurities, Seeding

 

Résumé :

 

Among new bulk silicon PV materials, HPmc-Si is one to be considered due its higher conversion efficiency compared to mc-Si solar PV. This research work aims at understanding the influence of the seeding materials and growth conditions on HPmc-Si ingots (dislocations and impurities). Five ingots were grown, and two types of seeding materials are compared to study the grain structure, the electrical properties and the conversion efficiency of solar cells. The initial growth region up to 50 mm is directly linked to the seed layer properties which are dependent on the melting segment parameters. The growth parameters take control on the grain structure after the seed affected region. The growth parameters studied modify little the characteristics of HPmc-Si ingots and the solar cell conversion efficiency. Low carrier lifetime areas determine the conversion efficiency and they can mainly be associated to the grain size, besides metallic impurities. The grain competition is very dynamic to suppress defective grains and to maintain smaller grain size variation, homogeneous grain size and properties being the most important characteristic of HPmc-Si ingots.