Dr. Luc Favre is assistant professor at Aix-Marseille University in IM2NP laboratory since 2005.
He received his engineering degree from the École Centrale de Lyon in 2000 and obtained his PhD degree in Physics from Claude Bernard University Lyon I, in 2004.
His current research focused on both growth and structural characterization of epitaxial silicon-germanium nanostrucutres, using Molecular Beam Epitaxy, Focused Ion Beam and High-Resolution Transmission Electron Microscopy.
His main subjects of research deal with the development of 2D (thin films), 1D (nanowires), or 0D (quantum dots) nano-objects of silicon-germanium semi-conductors. The challenge consists in the fine tuning of their size, morphology, composition, structure and location, simultaneously.
Most of the systems consists in high quality strained Si-Ge core-shell nano-objetcs. These nanowires or quantum dots are elaborated via various techniques: Molecular Beam Epitaxy (MBE), Chemical Vapor Deposition (CVD), Vapor-Liquid-Solid growth, Sol-Gel processes, ...
Their morphology, structure, local strain and composition are characterized via High Resolution Transmission Electron Microscopy. Using, the aberration corrected FEI TITAN HRTEM, many techniques are used:
- Selected Area Electron Diffraction (SAED)
- Energy-Dispersive X-ray Spectroscopy (EDS)
- Geometric Phase Analysis (GPA)
Considering nano-objects organization, two strategies are considered: the deposition using a molecular beam epitaxy through an inorganic matrix or the assisted dewetting process of thin Si or Ge layers on SiO2, using a Focused Ion Beam (FIB). The first one consist of a pure Bottom-Up technique, whereas the second one is an hybrid Bottom-Up / Top-Down technique.
