Equipe Mémoires (MEM)

Responsable d'équipe : Hassen AZIZA Co-responsable(s) : Marc BOCQUET

Site Polytech, Marseille

Thèmes de recherche :

L’équipe « Mémoires », forte de 11 enseignants-chercheurs (4 PR et 7 MCF) et d’une dizaine de chercheurs non permanents (doctorants et Post-doctorants), adresse un large panel de solutions mémoires à tous les stades de maturité.

Pour ce faire, une approche globale des dispositifs électroniques de mémorisation est mise en œuvre, allant des matériaux fonctionnels constituant l’élément de mémorisation, jusqu’au circuit mémoire en passant par les dispositifs mémoires isolés ou matricés. Les études menées sur l’ensemble de la chaîne de valeur s’appuient sur des moyens matériels de caractérisation et de test adaptés à chaque niveau d’étude. En effet, l’équipe dispose de moyens de nano-caractérisation (AFM) des matériaux fonctionnels constituant l’élément de mémorisation, d’un cryoprober 200mm pour les analyses physiques fines, en passant par des bancs de caractérisation sous pointes (ex: pober 300mm semi-automatique) pour les éléments mémoires isolés ou matricés. De plus, des compétences fortes en modélisation sont développées pour couvrir là aussi l’ensemble de la chaîne de valeur, allant de la modélisation des mécanismes physiques responsables du changement d’état logique, au développement de modèles compacts. Ce travail de modélisation et de caractérisation permet ainsi d’alimenter les activités de conceptions et de simulations circuits de l’équipe.

Les thèmes de recherche de l’équipe « Mémoires » sont organisés autour de 2 thématiques majeures:

Fiabilité, Optimisation et Sécurité

Caractérisation et modélisation de la fiabilité des mémoires émergentes résistives (RRAM)
Prise en compte des aspects sécuritaires sur les Mémoire Non-Volatile (NVM) conventionnelles et émergentes

Développement de Solution Innovantes

Conception et sécurisation de NVM émergentes pour les applications ultra basse consommation.
Utilisation des mémoires résistives pour des applications biomimétiques.

Mots clefs

Mémoires « base line », Mémoires prototypes (1TDRAM, Flash Nano-dots, Split-gate…), Mémoires émergentes (FRAM, MRAM, ReRAM, PCM), Mémoires volatiles et non volatiles en production (EEPROM, Flash, SRAM…), Diélectriques simples et multicouches, Fiabilité, Simulation physique (TCAD), Modèles compacts, Conception mémoires distribuées, Variabilité, Radiation, Caractérisation physique-électrique-test, sécurité, neuromorphique, in-memory computing.

Equipements spécifiques :

Caractérisation physique/électrique


AFM Veeco Nanoscope 3100	AFM JEOL JSPM-5410e	Cryoprober PMC200

Caractérisation électrique

Prober manuel


Cascade 200mm	Karlsuss 300mm	Karlsuss 200mm

Banc de caractérisation mémoires


Racks de caractérisation	B1500	Four & caractérisation in situ

Collaborations

Projet IPCEI Nano2022, 2020 – 2022, STMicroelectronics.
→
Projet CHIST-ERA UNICO, Unsupervised spiking Neural networks with analog memrIstive devices for edge COmputing, 2019 – 2021, Université de sherbrooke, C2N, IM2NP, IBM-Zurich, Jagiellonian University.
→
Projet ANR – Neuronic, BiNary NEURal NetOrks based oN CMOS/RRAM Hybrid archItecture and in Memory Computing Concept for Sensor Fusion Application, C2N, IM2NP, CEA-Léti 2019 – 2021,
→ Conception, fabrication et test d'un accélérateur matériel pour Neural Network associant circuit CMOS et mémoire résistive RRAM
Projet FUI – Multismart, 2019,
→
Projet Carnot – MACS, 2019,
→
Projet FUI - LISA, UltraLow power cIrcuit for Secure RF Applications, IM2NP (RFID Capteur, MEM), Starchip, Dolphin, TIMA, SPS, ISEN
→ Conception et réalisation d’un module ultra-faible consommation pour les applications RF sécurisées
Projet AMIDEX - RESET, RobutnEss Security of Embedded non volatile memory Technology, IM2NP, LP3, CEA-Tech, ISEN, STMicroelectronics
→ Etude de la robustesse de Mémoires eFlash sous stress laser
Projet ANR – DIPMEM, Design and Demonstration of Digital IP based on Emerging Non-Volatile MEMories, 2012 – 2015, CEA-Leti, CMP, IEF, IM2NP, LIRMM, SPINTEC, STMicroelectronics.
→ Réalisation d’un MCU « Normally-off » en technologie hybride CMOS 28nm FDSOI / RRAM pour le marché de l’IoT
Projet ANR - JCJC – REFLEX, REsistive memories on FLEXible substrates, 2012 – 2015, Equipes impliquées: MEM, DENO, RDI, RFID Capteurs – Plateforme SPRINT
→ Réalisation de mémoires résistives de type CBRAM sur support souple

Publications

Publications
A. Renaudineau, K.-E. Harabi, C. Turck, A. Laborieux, E. Vianello, Marc Bocquet, Jean-Michel Portal, D. Querlioz, Experimental Demonstration of Memristor Delay-Based Logic In-Memory Ternary Neural Network, 2023 Silicon Nanoelectronics Workshop (SNW), 2023, pp.43-44 (10.23919/SNW57900.2023.10183957) (hal-04270396)
J. Laguerre, Marc Bocquet, O. Billoint, S. Martin, J. Coignus, C. Carabasse, T. Magis, T. Dewolf, F. Andrieu, L. Grenouillet, Memory Window in Si:HfO 2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes, IMW 2023 - 2023 IEEE International Memory Workshop, 2023, pp.1-4 (10.1109/IMW56887.2023.10145972) (hal-04130967)
Mona Ezzadeen, Atreya Majumdar, Sigrid Thomas, Jean-Philippe Noël, Bastien Giraud, Marc Bocquet, François Andrieu, D. Querlioz, Jean-Michel Portal, Binary ReRAM-based BNN first-layer implementation, 2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2023, pp.1-6 (10.23919/DATE56975.2023.10137057) (hal-04270562)
Nikhil Garg, Ismael Balafrej, Terrence Stewart, Jean-Michel Portal, Marc Bocquet, D. Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, F. Alibart, Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential, Frontiers in Neuroscience, 2022, 16, pp.983950, 12 pages (10.3389/fnins.2022.983950) (hal-03834905)
T. Francois, J. Coignus, A. Makosiej, B. Giraud, C. Carabasse, J. Barbot, S. Martin, N. Castellani, T. Magis, H. Grampeix, S. van Duijn, C. Mounet, P. Chiquet, U. Schroeder, Stefan Slesazeck, T. Mikolajick, E. Nowak, Marc Bocquet, Nicholas Barrett, F. Andrieu, L. Grenouillet, High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays, IEEE Transactions on Electron Devices, 2022, pp.1-7 (10.1109/TED.2021.3138360) (hal-03596923)
T Francois, J. Coignus, A Makosiej, B Giraud, C Carabasse, J Barbot, S Martin, N Castellani, T Magis, H Grampeix, S van Duijn, C Mounet, P Chiquet, U Schroeder, S Slesazeck, T Mikolajick, E Nowak, Marc Bocquet, N Barrett, F Andrieu, L Grenouillet, 16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility, 67th Annual IEEE International Electron Devices Meeting (IEDM) 2021, 2021 (10.1109/IEDM19574.2021.9720640) (hal-03596974)
Joel Minguet Lopez, Tifenn Hirtzlin, Manon Dampfhoffer, Laurent Grenouillet, Lucas Reganaz, Gabriele Navarro, Catherine Carabasse, Elisa Vianello, Thomas Magis, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, François Andrieu, Gabriel Molas, OxRAM+OTS optimization for Binarized Neural Network hardware implementation, Semiconductor Science and Technology, 2021, 37, pp.014001 (10.1088/1361-6641/ac31e2) (hal-03418653)
Franck Melul, V. Della Marca, Marc Bocquet, Madjid Akbal, Pierre Laine, Frederique Trenteseaux, Marc Mantelli, Marjorie Hesse, Arnaud Regnier, Stephan Niel, Francesco Rosa, Morphology and reliability aspects of 40 nm eSTM™ architecture, Microelectronics Reliability, 2021, 126, pp.114266 (10.1016/j.microrel.2021.114266) (hal-03596892)
Atreya Majumdar, Marc Bocquet, Tifenn Hirtzlin, Axel Laborieux, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Model of the Weak Reset Process in HfO x Resistive Memory for Deep Learning Frameworks, IEEE Transactions on Electron Devices, 2021, 68, pp.4925-4932 (10.1109/TED.2021.3108479) (hal-03372056)
M. Ezzadeen, A. Majumdar, Marc Bocquet, B. Giraud, J.-P. Noel, F. Andrieu, D. Querlioz, Jean-Michel Portal, Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges, ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, pp.83-86 (10.1109/ESSCIRC53450.2021.9567742) (hal-03597353)
F. Jebali, A. Majumdar, A. Laborieux, T. Hirtzlin, E. Vianello, J.P. Walder, Marc Bocquet, D. Querlioz, Jean-Michel Portal, CAPC: A Configurable Analog Pop-Count Circuit for Near-Memory Binary Neural Networks, 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), 2021, pp.158-161 (10.1109/MWSCAS47672.2021.9531919) (hal-03624922)
Franck Melul, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Frederique Trenteseaux, Marc Mantelli, Arnaud Regnier, Stephan Niel, Francesco Rosa, Hot Electron Source Side Injection Comprehension in 40nm eSTM™, 2021 IEEE International Memory Workshop (IMW), 2021, pp.1-4 (10.1109/IMW51353.2021.9439613) (hal-03596898)
T. Francois, L. Grenouillet, J. Coignus, N. Vaxelaire, C. Carabasse, F. Aussenac, S. Chevalliez, S. Slesazeck, C. Richter, P. Chiquet, Marc Bocquet, U. Schroeder, T. Mikolajick, F. Gaillard, E. Nowak, Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors, Applied Physics Letters, 2021, 118, pp.062904 (10.1063/5.0035650) (hal-03596986)
E. Esmanhotto, L. Brunet, N. Castellani, D. Bonnet, T. Dalgaty, L. Grenouillet, D. Ly, C. Cagli, C. Vizioz, N. Allouti, F. Laulagnet, O. Gully, N. Bernard-Henriques, Marc Bocquet, G. Molas, P. Vivet, D. Querlioz, Jm. Portal, S. Mitra, F. Andrieu, C. Fenouillet-Beranger, E. Nowak, E. Vianello, High-Density 3D Monolithically Integrated Multiple 1T1R Multi-Level-Cell for Neural Networks, 2020 IEEE International Electron Devices Meeting (IEDM), 2020, pp.36.5.1-36.5.4 (10.1109/IEDM13553.2020.9372019) (hal-03218937)
Axel Laborieux, Marc Bocquet, Hirtzlin Tifenn, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Implementation of Ternary Weights With Resistive RAM Using a Single Sense Operation per Synapse, IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, pp.1-10 (10.1109/TCSI.2020.3031627) (hal-02983778)
Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Embracing the unreliability of memory devices for neuromorphic computing, IRPS 2020 - IEEE International Reliability Physics Symposium, 2020, pp.1-5 (10.1109/IRPS45951.2020.9128346) (hal-04019222)
Bogdan Penkovsky, Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications, 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2020, pp.690-695 (10.23919/DATE48585.2020.9116439) (hal-03218970)
Tifenn Hirtzlin, Marc Bocquet, Bogdan Penkovsky, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays, Frontiers in Neuroscience, 2020, 13 (10.3389/fnins.2019.01383) (hal-02436382)
Alexandre Levisse, Marc Bocquet, Marco Rios, Mouhamad Alayan, Mathieu Moreau, Etienne Nowak, Gabriel Molas, Elisa Vianello, David Atienza, Jean-Michel Portal, Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations, IEEE Access, 2020, pp.109297-109308 (10.1109/ACCESS.2020.3000867) (hal-02863232)
Axel Laborieux, Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, L Herrera Diez, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse, 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2020 (10.1109/AICAS48895.2020.9073877) (hal-02403984)
T. Hirtzlin, Marc Bocquet, M. Ernoult, J.-O Klein, E. Nowak, E. Vianello, J.-M Portal, D. Querlioz, Hybrid Analog-Digital Learning with Differential RRAM Synapses, 2019 IEEE International Electron Devices Meeting (IEDM), 2019 (10.1109/IEDM19573.2019.8993555) (hal-02399624)
T. Francois, L. Grenouillet, J. Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup, C. Pellissier, S Slesazeck, V Havel, C Richter, A Makosiej, B Giraud, E T Breyer, M Materano, P Chiquet, Marc Bocquet, E Nowak, U Schroeder, F Gaillard, Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications, 2019 IEEE International Electron Devices Meeting (IEDM), 2019 (10.1109/IEDM19573.2019.8993485) (hal-02399654)
D. Querlioz, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Marc Bocquet, Jean-Michel Portal, Miguel Romera, Philippe Talatchian, Julie Grollier, Memory-Centric Neuromorphic Computing With Nanodevices, Biomedical Circuits and Systems Conference (BiOCAS), 2019 (10.1109/BIOCAS.2019.8919010) (hal-02399731)
Tifenn Hirtzlin, Bogdan Penkovsky, Jacques-Olivier Klein, Nicolas Locatelli, Adrien F. Vincent, Marc Bocquet, Jean-Michel Portal, D. Querlioz, Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction, 15th IEEE / ACM International Symposium on Nanoscale Architectures (NANOARCH), 2019 () (hal-02399718)
Tifenn Hirtzlin, Bogdan Penkovsky, Marc Bocquet, Jacques-Olivier Klein, Jean-Michel Portal, D. Querlioz, Stochastic Computing for Hardware Implementation of Binarized Neural Networks, IEEE Access, 2019, pp.1-1 (10.1109/ACCESS.2019.2921104) (hal-02158846)
M. Alayan, E. Muhr, A. Levisse, Marc Bocquet, Mathieu Moreau, E. Nowak, G. Molas, Elisa Vianello, Jean-Michel Portal, Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays, IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66, pp.748-752 (10.1109/TCSII.2019.2908967) (hal-02158840)
T. Francois, J. Coignus, L. Grenouillet, J.P. P Barnes, N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta, M. Gros-Jean, S. Jeannot, P. Boivin, Philippe Chiquet, Marc Bocquet, E. Nowak, F Gaillard, Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance, 2019 IEEE 11th International Memory Workshop (IMW), 2019, 66, pp.1-4 (10.1109/IMW.2019.8739664) (hal-02399691)
T Hirtzlin, Marc Bocquet, J.-O Klein, E. Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks, IEEE International Conference on Artificial Intellignence Circuits and Systems (AICAS), 2019 (10.1109/AICAS.2019.8771544) (hal-02159142)
Marc Bocquet, T. Hirztlin, J.-O. Klein, E. Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks, 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp.20.6.1-20.6.4 (10.1109/IEDM.2018.8614639) (hal-02011124)
Charles Rebora, Ruomeng Huang, Gabriela P. Kissling, Marc Bocquet, C H (kees) De Groot, Luc Favre, David Grosso, Damien Deleruyelle, Magali Putero, Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy, Nanotechnology, 2018 (10.1088/1361-6528/aae6db) (hal-01951256)
Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Jean-Michel Portal, PCM compact model: Optimized methodology for model card extraction, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, SISPAD 2018, pp.190-193 (10.1109/SISPAD.2018.8551654) (cea-02188521)
V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, Philippe Chiquet, Marc Bocquet, Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction, Microelectronics Reliability, 2018, 88-90, pp.159 - 163 (10.1016/j.microrel.2018.06.116) (hal-01900789)
Corentin Pigot, Marc Bocquet, Fabien Gilibert, Marina Reyboz, Olga Cueto, V. Della Marca, Paola Zuliani, Jean-Michel Portal, Comprehensive Phase-Change Memory Compact Model for Circuit Simulation, IEEE Transactions on Electron Devices, 2018, pp.1 - 8 (10.1109/TED.2018.2862155) (hal-01869957)
M. Kharbouche-Harrari, J. Postel-Pellerin, Gregory Di Pendina, R. Wacquez, D. Aboulkassimi, Marc Bocquet, R. Sousa, R. Delattre, M. Portal, Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues, 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018, 2018, pp.243-244 (10.1109/IOLTS.2018.8474088) (hal-01976697)
Elena Ioana Vatajelu, Lorena Anghel, Jean-Michel Portal, Marc Bocquet, Guillaume Prenat, Resistive and spintronic RAMs: device, simulation, and applications, IOLTS 2018 - IEEE 24th International Symposium on On-Line Testing And Robust System Design, 2018, pp.109-114 (10.1109/IOLTS.2018.8474226) (hal-01976583)
Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, Jean-Michel Portal, Phase-Change Memory: A Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching, Japanese Journal of Applied Physics, 2018, 57 (10.7567/JJAP.57.04FE13) (hal-01737915)
Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, Jean-Michel Portal, Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory, 49th International Conference on Solid State Devices and Materals, 2017 () (hal-01737914)
Jean-Michel Portal, Marc Bocquet, Santhosh Onkaraiah, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Kholdoun Torki, Elisa Vianello, Alexandre Levisse, Bastien Giraud, Olivier P Thomas, Fabien Clermidy, Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology, IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686 (10.1109/TNANO.2017.2703985) (hal-01745418)
A Krakovinsky, Marc Bocquet, R Wacquez, J. Coignus, Jean-Michel Portal, Thermal Laser Attack and High Temperature Heating on HfO2-based OxRAM Cells, International Symposium on On-Line Testing and Robust System Design, 2017 () (hal-01737925)
Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 (10.1109/ULIS.2017.7962594) (hal-01745666)
El Amine Agharben, M. Bileci, A. Roussy, Marc Bocquet, Flash gate optimized process and integration for electrical performances requirement on advanced embedded memory, 2016 International Symposium on Semiconductor Manufacturing (ISSM), 2016 (10.1109/ISSM.2016.7934533) (hal-01737950)
G. Molas, G. Piccolboni, M. Barci, B. Traore, J. Guy, G. Palma, E. Vianello, P. Blaise, Jean-Michel Portal, Marc Bocquet, A. Levisse, B. Giraud, J. P. Noel, M. Harrand, M. Bernard, A. Route, B. de Salvo, L. Perniola, Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications, 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2016 () (hal-01435224)
A. Krakovinsky, Marc Bocquet, R. Wacquez, J. Coignus, Damien Deleruyelle, Cédric Djaou, G. Reimbold, Jean-Michel Portal, Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity, 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, pp.152-156 () (hal-01435097)
Hassen Aziza, H. Ayari, S. Onkaraiah, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation, 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), 2016, pp.1-5 (10.1109/DTIS.2016.7483892) (hal-01434981)
G. Piccolboni, G. Molas, M. Portal, R. Coquand, Marc Bocquet, D. Garbin, E. Vianello, C. Carabasse, V. Delaye, C. Pellissier, T. Magis, C. Cagli, M. Gély, O. Cueto, Damien Deleruyelle, Gérard Ghibaudo, B. de Salvo, L. Perniola, Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications, 2015 IEEE International Electron Devices Meeting (IEDM), 2015, pp.17.2.1-17.2.4 (10.1109/IEDM.2015.7409717) (hal-01804658)
Sarpi Brice, Nabil Rochdi, Rachid Daineche, M. Bertoglio, Christophe Girardeaux, Alain Baronnet, Jacques Perrin Toinin, Marc Bocquet, Mehdi Djafari-Rouhani, Anne Hémeryck, S. Vizzini, Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure, Surface Science Letters, 2015, 642, pp.L1-L5 (10.1016/j.susc.2015.08.003) (hal-01496546)
El Amine Agharben, A. Roussy, Marc Bocquet, M. Bileci, S Bégouin, A. Marchadier, Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory, 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2015 (10.1109/ASMC.2015.7164428) (hal-01737953)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM, Solid-State Electronics, 2015, 103, pp.73 - 78 (10.1016/j.sse.2014.09.005) (hal-01737300)
A. Prakash, Damien Deleruyelle, J. Song, Marc Bocquet, H. Hwang, Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application, Applied Physics Letters, 2015, 106, pp.233104 (10.1063/1.4922446) (hal-01737306)
Hassen Aziza, Haytem Ayari, Santhosh Onkaraiah, Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability, 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 (10.1109/DFT.2014.6962107) (hal-01745718)
A El Amraoui, Marc Bocquet, F. Barros, Jean-Michel Portal, M. Charbonneau, S. Jacob, J. Bablet, M. Benwadih, Viktor Fischer, R. Coppard, R. Gwoziecky, Printed complementary organic thin film transistors based decoder for ferroelectric memory, ESSCIRC 2014 - 40th European Solid State Circuits Conference, 2014 (10.1109/ESSCIRC.2014.6942034) (hal-01738468)
Charles Rebora, Marc Bocquet, T. Ouled-Khachroum, Magali Putero, Damien Deleruyelle, Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 (10.1109/PRIME.2014.6872754) (hal-01804660)
Ogun Turkyilmaz, Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, H. Hraziia, Costin Anghel, Jean-Michel Portal, Marc Bocquet, RRAM-based FPGA for “Normally Off, Instantly On” applications, Journal of Parallel and Distributed Computing, 2014, 74, pp.2441 - 2451 (10.1016/j.jpdc.2013.08.003) (hal-01743243)
Jean-Michel Portal, Marc Bocquet, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Yue Zhang, Wang Kang, Jacques-Olivier O Klein, Youguang Zhang, Claude Chappert, Weisheng Zhao, An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies, Journal of Electronic Science and Technology, 2014, 12, pp.173 - 181 (10.3969/j.issn.1674-862X.2014.02.007) (hal-01745646)
W. Zhao, M. Portal, W. Kang, Mathieu Moreau, Y. Zhang, Hassen Aziza, J.-O. Klein, Z.H. Wang, D. Querlioz, Damien Deleruyelle, Marc Bocquet, D. Ravelosona, Christophe Muller, C. Chappert, Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells, Journal of Parallel and Distributed Computing, 2014, 74, pp.2484 - 2496 (10.1016/j.jpdc.2013.08.004) (hal-01744000)
T. Cabout, E. Vianello, E. Jalaguier, H. Grampeix, G. Molas, P. Blaise, O. Cueto, M. Guillermet, J. F Nodin, L. Perniola, S. Blonkowski, S. Jeannot, S. Denorme, P. Candelier, Marc Bocquet, Christophe Muller, Effect of SET temperature on data retention performances of HfO2-based RRAM cells, 2014 IEEE 6th International Memory Workshop (IMW), 2014 (10.1109/IMW.2014.6849355) (hal-01738447)
Fabien Clermidy, Natalija Jovanovic, Santhosh Onkaraiah, Houcine Oucheikh, Olivier P Thomas, Ogun Turkyilmaz, Elisa Vianello, Jean-Michel Portal, Marc Bocquet, Resistive memories: Which applications?, Design Automation and Test in Europe, 2014 (10.7873/DATE.2014.282) (hal-01804664)
Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal, Thomas Cabout, Eric Jalaguier, Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories, IEEE Transactions on Electron Devices, 2014, 61, pp.674 - 681 (10.1109/TED.2013.2296793) (hal-01737291)
Weisheng Zhao, Mathieu Moreau, Erya Deng, Yue Zhang, Jean-Michel Portal, Jacques-Olivier O Klein, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, D. Querlioz, Nesrine Ben Romdhane, Dafiné Ravelosona, Claude Chappert, Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories, IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61, pp.443 - 454 (10.1109/TCSI.2013.2278332) (hal-01743999)
Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, Jean-Michel Portal, Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM), Journal of Low Power Electronics and Applications, 2014, 4, pp.1-14 (10.3390/jlpea4010001) (hal-01737320)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, Single-ended sense amplifier robustness evaluation for OxRRAM technology, 2013 IEEE Design and Test Symposium (IDT), 2013 (10.1109/IDT.2013.6727097) (hal-01745737)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs, International Semiconductor Device Research Symposium, 2013 () (hal-01745729)
Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller, A novel test structure for OxRRAM process variability evaluation, Microelectronics Reliability, 2013, 53, pp.1208 - 1212 (10.1016/j.microrel.2013.07.012) (hal-01745650)
Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Yue Zhang, Erya Deng, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao, Analytical study of complementary memristive synchronous logic gates, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2013 (10.1109/NanoArch.2013.6623047) (hal-01745759)
M Zhang, Yousra Chabchoub, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng S Zhao, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, C Muller, Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells, 11th International New Circuits and Systems Conference (NEWCAS), 2013 (10.1109/NEWCAS.2013.6573578) (hal-01840795)
T. Cabout, L. Perniola, V. Jousseaume, H. Grampeix, J.F. Nodin, A. Toffoli, M. Guillermet, E. Jalaguier, E. Vianello, G. Molas, G. Reimbold, B. de Salvo, T. Diokh, P. Candelier, O. Pirrotta, A. Padovani, L. Larcher, Marc Bocquet, Christophe Muller, Temperature impact (up to 200°C) on performance and reliability of HfO2-based RRAMs, 2013 5th IEEE International Memory Workshop (IMW), 2013 (10.1109/IMW.2013.6582112) (hal-01738426)
K. Coulié, Marc Bocquet, Hassen Aziza, Jean-Michel Portal, Rahajandraibe Wenceslas, Christophe Muller, SPICE level analysis of Single Event Effects in an OxRRAM cell, 2013 14th Latin American Test Workshop - LATW, 2013 (10.1109/LATW.2013.6562684) (hal-01804661)
T. Cabout, J. Buckley, C. Cagli, V. Jousseaume, J.-F. Nodin, B. de Salvo, Marc Bocquet, Christophe Muller, Role of Ti and Pt electrodes on resistance switching variability of HfO$_2$-based Resistive Random Access Memory, EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices, 2012, 533, pp.19 - 23 (10.1016/j.tsf.2012.11.050) (hal-01762335)
H. Hraziia, Adam Makosiej, Giorgio Palma, Jean-Michel Portal, Marc Bocquet, Olivier Thomas, Fabien Clermidy, Marina Reyboz, Santhosh Onkaraiah, Christophe Muller, Damien Deleruyelle, Andrei Vladimirescu, Amara Amara, Costin Anghel, Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up, Solid-State Electronics, 2013, 90, pp.99-106 (10.1016/j.sse.2013.02.045) (hal-01744003)
Weisheng Zhao, M Zhang, Jacques-Olivier Klein, D. Querlioz, Dafine Ravelosona, Claude Chappert, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Crossbar architecture based on 2R complementary resistive switching memory cell, 2012 IEEE/ACM International Symposium on Nanoscale Architectures, 2012 (10.1145/2765491.2765508) (hal-01745351)
Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, Jean-Michel Portal, Marc Bocquet, Christophe Muller, H. Hraziia, Costin Anghel, Amara Amara, Bipolar ReRAM Based Non-‐Volatile Flip-‐flops for Low-‐Power Architectures, 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS), 2012 (10.1109/NEWCAS.2012.6329045) (hal-01745498)
Thomas Cabout, Julien Buckley, Carlo Cagli, Vincent Jousseaume, Jean-François Nodin, Barbara de Salvo, Marc Bocquet, Christophe Muller, Resistance switching variability in HfO2-based memory structures with different electrodes, EMRS Spring Meeting 2012, 2012 () (hal-01738395)
Guillaume Gay, Gabriel Molas, Marc Bocquet, Eric Jalaguier, Marc Gély, L. Masarotto, J.P Colonna, Helen Grampeix, F. Martin, P. Brianceau, Vincent Vidal, R. Kies, T. Baron., Gérard Ghibaudo, Barbara Desalvo, Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics, IEEE Transactions on Electron Devices, 2012, 59, pp.933 - 940 (10.1109/TED.2012.2182769) (hal-01804667)
Jean-Michel Portal, Marc Bocquet, Damien Deleruyelle, Christophe Muller, Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications, Journal of Low Power Electronics, 2012, 8, pp.1 - 10 (10.1166/jolpe.2012.1172) (hal-01745507)
Damien Deleruyelle, Magali Putero, T. Ouled-Khachroum, Marc Bocquet, Marie-Vanessa Coulet, Xavier Boddaert, C. Calmes, Christophe Muller, Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate, Solid-State Electronics, 2012, pp.xxxxx (10.1016/j.sse.2012.06.010) (emse-00767177)
S Tirano, Marc Bocquet, Christophe Muller, Damien Deleruyelle, L. Perniola, V. Jousseaume, B. de Salvo, G. Reimbold, On the electrical variability of resistive-switching memory devices based on NiO oxide, 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), 2011 () (hal-01745633)
Marc Bocquet, Damien Deleruyelle, Christophe Muller, Jean-Michel Portal, Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories, Applied Physics Letters, 2011, 98 (10.1063/1.3605591) (hal-01779321)
Gabriel Molas, J.P. Colonna, R. Kies, D. Belhachemi, Marc Bocquet, M. Gély, V. Vidal, P. Brianceau, E. Martinez, A.M. Papon, C. Licitra, L. Vandroux, Gérard Ghibaudo, Barbara Desalvo, Investigation of charge-trap memories with AlN based band engineered storage layers, Solid-State Electronics, 2011, 58, pp.68 - 74 (10.1016/j.sse.2010.11.030) (hal-01804675)
J.-P. Colonna, Marc Bocquet, Gabriel Molas, N. Rochat, P. Blaise, Helen Grampeix, Christophe Licitra, D. Lafond, Lia Masoero, Vincent Vidal, Jean-Paul Barnes, M. Veillerot, K. Yckache, Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2011, 29, pp.159-165 (10.1116/1.3535552) (hal-01804670)
Christophe Muller, Damien Deleruyelle, O. Ginez, Jean-Michel Portal, Marc Bocquet, Design challenges for prototypical and emerging memory concepts relying on resistance switching, 2011 IEEE Custom Integrated Circuits Conference (CICC 2011), 2011 (10.1109/CICC.2011.6055316) (hal-01745644)
G. Molas, Marc Bocquet, J. Colonna, V. Vidal, R. Kies, H. Grampeix, F. Martin, A. Papon, H. Dansas, P. Brianceau, C. Licitra, J. Barnes, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo, Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010 (10.1109/VTSA.2010.5488949) (hal-01745640)
G. Molas, L. Masoero, P. Blaise, A. Padovani, J. P. Colonna, E. Vianello, Marc Bocquet, Emmanuel Nowak, M. Gasulla, O. Cueto, H. Grampeix, F. Martin, R. Kies, P. Brianceau, M. Gély, A. M. Papon, D. Lafond, J. P. Barnes, C. Licitra, Gérard Ghibaudo, L. Larcher, S. Deleonibus, B. de Salvo, Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling, IEEE IEDM 2010,, 2010, pp.xx () (hal-00604550)
Emmanuel Nowak, E. Vianello, L. Perniola, Marc Bocquet, G. Molas, R. Kies, M. Gely, Gérard Ghibaudo, B. de Salvo, G. Reimbold, F. Boulanger, Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices, Japanese Journal of Applied Physics, 2010, 49, pp.04DD12 () (hal-00596309)
Marc Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, M. Gély, J.P. Colonna, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, S. Deleonibus, Gérard Ghibaudo, Georges Pananakakis, B. de Salvo, Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories, Solid-State Electronics, 2009, 53, pp.786 - 791 (10.1016/j.sse.2009.03.018) (hal-01737746)
G. Molas, Marc Bocquet, E. Vianello, L. Perniola, H. Grampeix, Colonna J.P., L. Masarotto, F. Martin, P. Brianceau, M. Gély, C. Bongiorno, S. Lombardo, Georges Pananakakis, Gérard Ghibaudo, De Salvo B., Reliability of charge trapping memories with high-k control dielectrics, Microelectronic Engineering, 2009, 86, pp.1796-1803 () (hal-00596125)
Emmanuel Nowak, E. Vianello, L. Perniola, Marc Bocquet, G. Molas, R. Kies, M. Gely, Gérard Ghibaudo, B. de Salvo, G. Reimbold, F. Boulanger, Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices., International Conference on Solid State Devices and Materials (SSDM), 2009, pp.xx () (hal-00604215)
G. Molas, Marc Bocquet, H. Grampeix, J.P. Colonna, L. Masarotto, C. Licitra, N. Rochat, T. Veyron, F. Martin, M. Gély, C. Bongiorno, S. Lombardo, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo., Reliability of charge trapping memories with high-k control dielectrics, 5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, 2008 () (hal-00392559)
Emmanuel Nowak, Marc Bocquet, L. Perniola, Gérard Ghibaudo, G. Molas, C. Jahan, R. Kies, G. Reimbold, B. de Salvo, F. Boulanger, New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories., IEEE International Electron Devices Meeting 2008, San Francisco, USA, 2008, pp.x () (hal-00392162)
G. Molas, Marc Bocquet, J. Buckley, H. Grampeix, M. Gély, J.P. Colonna, F. Martin, P. Brianceau, V. Vidal, C. Bongiorno, S. Lombardo, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo, S. Deleonibus, Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories., Microelectronic Engineering, 2008, 85, 2393-2399, pp.x () (hal-00391751)
Marc Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, M. Gély, J.-P. Colonna, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, B. de Salvo, S. Deleonibus, Georges Pananakakis, Gérard Ghibaudo, On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories, 38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, 2008, pp.x () (hal-00392558)
G. Molas, Marc Bocquet, J. Buckley, J. P Colonna, L. Masarotto, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, P. Brianceau, L. Vermande, P. Scheiblin, M. Gély, A. Papon, G. Auvert, L. Perniola, C. Licitra, T. Veyron, N. Rochat, C. Bongiorno, S. Lombardo, B. de Salvo, S. Deleonibus, Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications, 2007 IEEE International Electron Devices Meeting - IEDM '07, 2007, pp.453-456 (10.1109/IEDM.2007.4418971) (hal-02072903)
G. Molas, Marc Bocquet, J. Buckley, H. Grampeix, M. Gely, J.-P. Colonna, C. Licitra, N. Rochat, T. Veyron, X. Garros, Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories, Solid-State Electronics, 2007, 51, pp.1540 - 1546 (10.1016/j.sse.2007.09.020) (hal-01804685)
Marc Bocquet, G. Molas, H. Grampeix, J. Buckley, F. Martin, J.-P. Colonna, M. Gély, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo, S. Deleonibus, Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers, International Conference on Memory Technology and Design (ICMTD), 2007 () (hal-01745578)
J. Buckley, Marc Bocquet, G. Molas, M. Gely, P. Brianceau, N. Rochat, E. Martinez, F. Martin, H. Grampeix, J.P. Colonna, V. Vidal, Cédric Leroux, Gérard Ghibaudo, Georges Pananakakis, C. Bongiorno, D. Corso, S. Lombardo, B. Desalvo, In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap, NVMsIEDM 2006, 2006, pp.XX () (hal-00147137)
Hassen Aziza, H. Bazzi, J. Postel-Pellerin, P. Canet, Mathieu Moreau, A. Harb, An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2019 (10.1109/DTIS.2019.8735057) (hal-02306907)
Philippe Chiquet, Maxime Chambonneau, V. Della Marca, J. Postel-Pellerin, P. Canet, Sarra Souiki Souiki-Figuigui, Guillaume Idda, Jean-Michel Portal, David Grojo, Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser, Scientific Reports, 2019, 9 (10.1038/s41598-019-43344-x) (hal-02137915)
T. Kempf, V. Della Marca, P. Canet, A. Regnier, P. Masson, Jean-Michel Portal, A new method for test chip and single 40nm NOR Flash cell electrical parameters correlation using a CAST structure, 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018 (10.1109/VLSI-TSA.2018.8403859) (hal-01900783)
Hassen Aziza, P. Canet, J. Postel-Pellerin, Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories, Advances in Science, Technology and Engineering Systems Journal, 2018, 3, pp.11-17 (10.25046/aj030102) (hal-02335339)
Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 (10.1109/ULIS.2017.7962594) (hal-01745666)
Maxime Chambonneau, Sarra Souiki Souiki-Figuigui, Philippe Chiquet, Vincenzo Della Marca, J. Postel-Pellerin, P. Canet, Jean-Michel Portal, David Grojo, Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations, Applied Physics Letters, 2017, 110, pp.161112 - 161112 () (hal-01655116)
Thomas Sarno, Romain Wacquez, Edith Kussener, Philippe Maurine, Khalil Jradi, Jean-Michel Portal, Driss Aboulkassimi, Sarra Souiki-Figuigui, J. Postel-Pellerin, P. Canet, Maxime Chambonneau, David Grojo, Electromagnetic Analysis Perturbation using Chaos Generator, Truedevice 2016, 2016 () (hal-01455446)
P. Canet, J. Postel-Pellerin, Hassen Aziza, Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), 2016 () (hal-01463140)
P. Canet, J. Postel-Pellerin, Hassen Aziza, Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories, Microelectronics Reliability, 2016, 64, pp.36-41 (10.1016/j.microrel.2016.07.096) (hal-01434941)
V. Della Marca, M. Chambonneau, S. Souiki-Figuigui, J. Postel-Pellerin, P. Canet, Philippe Chiquet, Edith Kussener, F. Yengui, R. Wacquez, David Grojo, Jean-Michel Portal, M. Lisart, NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests, 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016 (10.1109/IRPS.2016.7574580) (hal-01418479)
Jonathan Bartoli, V. Della Marca, J. Postel-Pellerin, Julien Delalleau, Arnaud Regnier, Stephan Niel, Francesco La Rosa, P. Canet, Frédéric Lalande, Optimization of the ATW Non-Volatile Memory for Connected Smart Objects, 2015 IEEE International Memory Workshop (IMW), 2015 (10.1109/IMW.2015.7150299) (hal-01760536)
V. Della Marca, T. Wakrim, J. Postel-Pellerin, P. Canet, Advanced experimental setup for reliability and current consumption measurements of Flash non-volatile memories, IMEKO TC4, 2014 () (hal-01760548)
V. Della Marca, J. Postel-Pellerin, G. Just, P. Canet, J.-L. Ogier, Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories, Microelectronics Reliability, 2014, 54, pp.2262 - 2265 (10.1016/j.microrel.2014.07.063) (hal-01760459)
T. Francois, J. Coignus, L. Grenouillet, J.P. P Barnes, N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta, M. Gros-Jean, S. Jeannot, P. Boivin, Philippe Chiquet, Marc Bocquet, E. Nowak, F Gaillard, Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance, 2019 IEEE 11th International Memory Workshop (IMW), 2019, 66, pp.1-4 (10.1109/IMW.2019.8739664) (hal-02399691)
Philippe Chiquet, Maxime Chambonneau, V. Della Marca, J. Postel-Pellerin, P. Canet, Sarra Souiki Souiki-Figuigui, Guillaume Idda, Jean-Michel Portal, David Grojo, Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser, Scientific Reports, 2019, 9 (10.1038/s41598-019-43344-x) (hal-02137915)
J. Postel-Pellerin, Gilles Micolau, Philippe Chiquet, Maminirina Joelson, Jean-Baptiste Decitre, A global modeling approach of the leakage phenomena in dielectrics, E3S Web of Conferences, 2019, 88, pp.05002 (10.1051/e3sconf/20198805002) (hal-02618292)
V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, Philippe Chiquet, Marc Bocquet, Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction, Microelectronics Reliability, 2018, 88-90, pp.159 - 163 (10.1016/j.microrel.2018.06.116) (hal-01900789)
Maxime Chambonneau, Sarra Souiki Souiki-Figuigui, Philippe Chiquet, Vincenzo Della Marca, J. Postel-Pellerin, P. Canet, Jean-Michel Portal, David Grojo, Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations, Applied Physics Letters, 2017, 110, pp.161112 - 161112 () (hal-01655116)
J. Postel-Pellerin, Philippe Chiquet, V. Della Marca, Simulation of the programming efficiency and the energy consumption of Flash memories during endurance degradation, International Semiconductor Conference (CAS), 2016, 2016 (10.1109/SMICND.2016.7783052) (hal-01436469)
Philippe Chiquet, J. Postel-Pellerin, C. Tuninetti, S. Souiki-Figuigui, P. Masson, Effect Of Short Pulsed Program/Erase Cycling On Flash Memory Devices, Workshop on New Perspectives in Measurements, Tools and Techniques for system’s reliability, maintainability and safety, 2016 () (hal-01437034)
Philippe Chiquet, J. Postel-Pellerin, C. Tuninetti, S. Souiki-Figuigui, P. Masson, Enhancement of flash memory endurance using short pulsed program/erase signals, ACTA IMEKO, 2016, 5, pp.29-36 (10.21014/acta_imeko.v5i4.422) (hal-01451431)
J. Postel-Pellerin, Philippe Chiquet, Gilles Micolau, D. Boyer, Indirect measurement of low tunneling currents through dielectrics using floating gate structures, IEEE International Conference on Dielectrics (ICD), 2016, pp.1065-1068 () (hal-01594071)
G. Micolau, J. Postel-Pellerin, Philippe Chiquet, M. Joelson, C. Abbas, D. Boyer, Caroline Giroux, Toward an innovative stochastic modeling of electric charges losses trough dielectrics, Inter-Disciplinary Underground Science and Technology (i-DUST) Conference, 2016, 12, pp.9 (10.1051/e3sconf/20161204004) (hal-01451874)
V. Della Marca, M. Chambonneau, S. Souiki-Figuigui, J. Postel-Pellerin, P. Canet, Philippe Chiquet, Edith Kussener, F. Yengui, R. Wacquez, David Grojo, Jean-Michel Portal, M. Lisart, NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests, 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016 (10.1109/IRPS.2016.7574580) (hal-01418479)
J. Postel-Pellerin, Philippe Chiquet, V. Della Marca, T. Wakrim, G. Just, J.L. Ogier, Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses, 2014 International Semiconductor Conference (CAS), 2014 (10.1109/SMICND.2014.6966433) (hal-01760566)
Philippe Chiquet, Pascal Masson, J. Postel-Pellerin, Romain Laffont, Gilles Micolau, Frédéric Lalande, Arnaud Regnier, Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices, Measurement - Journal of the International Measurement Confederation (IMEKO), 2014, 54, pp.234-240 (10.1016/j.measurement.2014.02.015) (hal-01315418)
Philippe Chiquet, P. Masson, Gilles Micolau, R. Laffont, F. Lalande, J. Postel-Pellerin, A. Regnier, Determination of physical properties of semiconductor-oxide-semiconductor structures using a new fast gate current measurement protocol., 11th IEEE International Conference on Solid Dielectrics, 2013 () (hal-01315415)
Hassan Aziza, J. Postel-Pellerin, Mathieu Moreau, Experimental Analysis of Oxide-Based RAM Analog Synaptic Behavior, Electronics, 2022, 12, pp.49 (10.3390/electronics12010049) (hal-03941057)
Hassen Aziza, J. Postel-Pellerin, Mathieu Moreau, STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance, IEEE Transactions on Device and Materials Reliability, 2022, 22, pp.500-505 (10.1109/TDMR.2022.3213191) (hal-03941082)
Hassen Aziza, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, Patrick Girard, Arnaud Virazel, Karine Coulié, Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation, Microelectronics Reliability, 2021, 126, pp.1877-1880 (10.23919/DATE51398.2021.9473967) (hal-03504284)
Hussein Bazzi, Hassen Aziza, Mathieu Moreau, Adnan Harb, Performances and Stability Analysis of a novel 8T1R Non-volatile SRAM (NVSRAM) versus Variability, Journal of Electronic Testing: : Theory and Applications, 2021, 37, pp.515-532 (10.1007/s10836-021-05965-x) (hal-03501909)
Hassen Aziza, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, Patrick Girard, Arnaud Virazel, K. Coulié, Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State, Electronics, 2021, 10, pp.#2222 (10.3390/electronics10182222) (lirmm-03377249)
Alexandre Levisse, Marc Bocquet, Marco Rios, Mouhamad Alayan, Mathieu Moreau, Etienne Nowak, Gabriel Molas, Elisa Vianello, David Atienza, Jean-Michel Portal, Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations, IEEE Access, 2020, pp.109297-109308 (10.1109/ACCESS.2020.3000867) (hal-02863232)
Hassen Aziza, Mathieu Moreau, M. Fieback, M. Taouil, S. Hamdioui, An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs), IEEE Access, 2020, 8, pp.137263-137274 (10.1109/ACCESS.2020.3011647) (hal-03504829)
M. Alayan, E. Muhr, A. Levisse, Marc Bocquet, Mathieu Moreau, E. Nowak, G. Molas, Elisa Vianello, Jean-Michel Portal, Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays, IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66, pp.748-752 (10.1109/TCSII.2019.2908967) (hal-02158840)
Hassen Aziza, H. Bazzi, J. Postel-Pellerin, P. Canet, Mathieu Moreau, A. Harb, An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2019 (10.1109/DTIS.2019.8735057) (hal-02306907)
Hassen Aziza, Mathieu Moreau, Jean-Michel Portal, Arnaud Virazel, Patrick Girard, A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks, NEWCAS 2019 - 17th IEEE International Conference on Electronics Circuits and Systems, 2019 (10.1109/NEWCAS44328.2019.8961278) (lirmm-02395325)
D. Gordon, Mathieu Moreau, Vincent Fourcassié, J. Traniello, Limited size-related variation in behavioral performance among workers of the exceptionally polymorphic ant Pheidole rhea, Insectes Sociaux, 2018, 65, pp.431-438 (10.1007/s00040-018-0629-4) (hal-02123578)
Jean-Michel Portal, Marc Bocquet, Santhosh Onkaraiah, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Kholdoun Torki, Elisa Vianello, Alexandre Levisse, Bastien Giraud, Olivier P Thomas, Fabien Clermidy, Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology, IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686 (10.1109/TNANO.2017.2703985) (hal-01745418)
Alexandre Levisse, P. Royer, Bastien Giraud, J.P. Nöel, Mathieu Moreau, Jean-Michel Portal, Architecture, design and technology guidelines for crosspoint memories, 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2017, 16, pp.677 - 686 (10.1109/NANOARCH.2017.8053733) (hal-01788148)
Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 (10.1109/ULIS.2017.7962594) (hal-01745666)
A. Levisse, B. Giraud, J.P. Noel, Mathieu Moreau, Jean-Michel Portal, High density emerging resistive memories: What are the limits?, 2017 IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS), 2017 (10.1109/LASCAS.2017.7948104) (hal-01788136)
Alexandre Levisse, Bastien Giraud, Jean-Philippe Noël, Mathieu Moreau, Jean-Michel Portal, Capacitor based SneakPath compensation circuit for transistor-less ReRAM architectures, Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016, pp.7-12 (10.1145/2950067.2950073) (hal-01435118)
Hassen Aziza, H. Ayari, S. Onkaraiah, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation, 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), 2016, pp.1-5 (10.1109/DTIS.2016.7483892) (hal-01434981)
Alexandre Levisse, Bastien Giraud, Jean-Philippe Noël, Mathieu Moreau, Jean-Michel Portal, SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architectures, 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015 (10.1109/NVMTS.2015.7457426) (hal-01745689)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM, Solid-State Electronics, 2015, 103, pp.73 - 78 (10.1016/j.sse.2014.09.005) (hal-01737300)
Hassen Aziza, Haytem Ayari, Santhosh Onkaraiah, Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability, 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 (10.1109/DFT.2014.6962107) (hal-01745718)
Jean-Michel Portal, Marc Bocquet, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Yue Zhang, Wang Kang, Jacques-Olivier O Klein, Youguang Zhang, Claude Chappert, Weisheng Zhao, An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies, Journal of Electronic Science and Technology, 2014, 12, pp.173 - 181 (10.3969/j.issn.1674-862X.2014.02.007) (hal-01745646)
W. Zhao, M. Portal, W. Kang, Mathieu Moreau, Y. Zhang, Hassen Aziza, J.-O. Klein, Z.H. Wang, D. Querlioz, Damien Deleruyelle, Marc Bocquet, D. Ravelosona, Christophe Muller, C. Chappert, Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells, Journal of Parallel and Distributed Computing, 2014, 74, pp.2484 - 2496 (10.1016/j.jpdc.2013.08.004) (hal-01744000)
Weisheng Zhao, Mathieu Moreau, Erya Deng, Yue Zhang, Jean-Michel Portal, Jacques-Olivier O Klein, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, D. Querlioz, Nesrine Ben Romdhane, Dafiné Ravelosona, Claude Chappert, Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories, IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61, pp.443 - 454 (10.1109/TCSI.2013.2278332) (hal-01743999)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, Single-ended sense amplifier robustness evaluation for OxRRAM technology, 2013 IEEE Design and Test Symposium (IDT), 2013 (10.1109/IDT.2013.6727097) (hal-01745737)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs, International Semiconductor Device Research Symposium, 2013 () (hal-01745729)
Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller, A novel test structure for OxRRAM process variability evaluation, Microelectronics Reliability, 2013, 53, pp.1208 - 1212 (10.1016/j.microrel.2013.07.012) (hal-01745650)
Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Yue Zhang, Erya Deng, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao, Analytical study of complementary memristive synchronous logic gates, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2013 (10.1109/NanoArch.2013.6623047) (hal-01745759)
Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Y. Zhang, E. Deng, J.O O Klein, D. Querlioz, D. Ravelosona, C. Chappert, W.S. S Zhao, M. Portal, Analytical study of complementary memristive synchronous logic gates, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2013 (10.1109/NanoArch.2013.6623047) (hal-01827052)
M Zhang, Yousra Chabchoub, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng S Zhao, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, C Muller, Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells, 11th International New Circuits and Systems Conference (NEWCAS), 2013 (10.1109/NEWCAS.2013.6573578) (hal-01840795)
Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel, Journal of Non-Crystalline Solids, 2011, 357, pp.1879-1883 (10.1016/j.jnoncrysol.2010.12.046) (hal-01430098)
Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials, Microelectronic Engineering, 2011, 88, pp.366-369 (10.1016/j.mee.2010.08.026) (hal-01430097)
Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-kappa Dielectric Stack Using the Non-equilibrium Green's Function Formalism, Japanese Journal of Applied Physics, 2009, 48 (10.1143/JJAP.48.111409) (hal-01430110)
Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, F. Bellenger, J. Mitard, M. Houssa, Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices, Journal of Non-Crystalline Solids, 2009, 355, pp.1171-1175 (10.1016/j.jnoncrysol.2009.01.056) (hal-01430114)
Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, M. Houssa, Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study, Journal of Non-Crystalline Solids, 2009, 355, pp.1180-1184 (10.1016/j.jnoncrysol.2009.03.006) (hal-01430113)
Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs, Molecular Simulation, 2009, 35, pp.491-497 (10.1080/08927020902801548) (hal-00515080)
Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Florence Bellenger, Jérome Mitard, Michel Houssa, Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices, MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02 (10.1557/PROC-1194-A02-02) (hal-01745840)
Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, 3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates, Conference on Radiation Effects on Components and Systems (RADECS), 2008, pp.280-283 (10.1109/RADECS.2008.5782727) (hal-01841105)
Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2008, 47, pp.7013 - 7018 (10.1143/JJAP.47.7013) (hal-01745615)
Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs, NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, pp.877+ () (hal-01759433)
A. Renaudineau, K.-E. Harabi, C. Turck, A. Laborieux, E. Vianello, Marc Bocquet, Jean-Michel Portal, D. Querlioz, Experimental Demonstration of Memristor Delay-Based Logic In-Memory Ternary Neural Network, 2023 Silicon Nanoelectronics Workshop (SNW), 2023, pp.43-44 (10.23919/SNW57900.2023.10183957) (hal-04270396)
Mona Ezzadeen, Atreya Majumdar, Sigrid Thomas, Jean-Philippe Noël, Bastien Giraud, Marc Bocquet, François Andrieu, D. Querlioz, Jean-Michel Portal, Binary ReRAM-based BNN first-layer implementation, 2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2023, pp.1-6 (10.23919/DATE56975.2023.10137057) (hal-04270562)
Nikhil Garg, Ismael Balafrej, Terrence Stewart, Jean-Michel Portal, Marc Bocquet, D. Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, F. Alibart, Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential, Frontiers in Neuroscience, 2022, 16, pp.983950, 12 pages (10.3389/fnins.2022.983950) (hal-03834905)
F. Jebali, E. Muhr, M. Alayan, M.C. Faye, D. Querlioz, F. Andrieu, E. Vianello, G. Molas, M. Bocquet, Jean-Michel Portal, Embedded measurement of the SET switching time of RRAM memory cells, 34 TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2022, pp.1-5 (10.1109/ICMTS50340.2022.9898162) (hal-03971049)
Joel Minguet Lopez, Tifenn Hirtzlin, Manon Dampfhoffer, Laurent Grenouillet, Lucas Reganaz, Gabriele Navarro, Catherine Carabasse, Elisa Vianello, Thomas Magis, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, François Andrieu, Gabriel Molas, OxRAM+OTS optimization for Binarized Neural Network hardware implementation, Semiconductor Science and Technology, 2021, 37, pp.014001 (10.1088/1361-6641/ac31e2) (hal-03418653)
Atreya Majumdar, Marc Bocquet, Tifenn Hirtzlin, Axel Laborieux, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Model of the Weak Reset Process in HfO x Resistive Memory for Deep Learning Frameworks, IEEE Transactions on Electron Devices, 2021, 68, pp.4925-4932 (10.1109/TED.2021.3108479) (hal-03372056)
M. Ezzadeen, A. Majumdar, Marc Bocquet, B. Giraud, J.-P. Noel, F. Andrieu, D. Querlioz, Jean-Michel Portal, Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges, ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, pp.83-86 (10.1109/ESSCIRC53450.2021.9567742) (hal-03597353)
F. Jebali, A. Majumdar, A. Laborieux, T. Hirtzlin, E. Vianello, J.P. Walder, Marc Bocquet, D. Querlioz, Jean-Michel Portal, CAPC: A Configurable Analog Pop-Count Circuit for Near-Memory Binary Neural Networks, 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), 2021, pp.158-161 (10.1109/MWSCAS47672.2021.9531919) (hal-03624922)
Axel Laborieux, Marc Bocquet, Hirtzlin Tifenn, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Implementation of Ternary Weights With Resistive RAM Using a Single Sense Operation per Synapse, IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, pp.1-10 (10.1109/TCSI.2020.3031627) (hal-02983778)
Tifenn Hirtzlin, Marc Bocquet, Bogdan Penkovsky, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays, Frontiers in Neuroscience, 2020, 13 (10.3389/fnins.2019.01383) (hal-02436382)
Alexandre Levisse, Marc Bocquet, Marco Rios, Mouhamad Alayan, Mathieu Moreau, Etienne Nowak, Gabriel Molas, Elisa Vianello, David Atienza, Jean-Michel Portal, Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations, IEEE Access, 2020, pp.109297-109308 (10.1109/ACCESS.2020.3000867) (hal-02863232)
Axel Laborieux, Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, L Herrera Diez, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse, 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2020 (10.1109/AICAS48895.2020.9073877) (hal-02403984)
D. Querlioz, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Marc Bocquet, Jean-Michel Portal, Miguel Romera, Philippe Talatchian, Julie Grollier, Memory-Centric Neuromorphic Computing With Nanodevices, Biomedical Circuits and Systems Conference (BiOCAS), 2019 (10.1109/BIOCAS.2019.8919010) (hal-02399731)
Tifenn Hirtzlin, Bogdan Penkovsky, Jacques-Olivier Klein, Nicolas Locatelli, Adrien F. Vincent, Marc Bocquet, Jean-Michel Portal, D. Querlioz, Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction, 15th IEEE / ACM International Symposium on Nanoscale Architectures (NANOARCH), 2019 () (hal-02399718)
Tifenn Hirtzlin, Bogdan Penkovsky, Marc Bocquet, Jacques-Olivier Klein, Jean-Michel Portal, D. Querlioz, Stochastic Computing for Hardware Implementation of Binarized Neural Networks, IEEE Access, 2019, pp.1-1 (10.1109/ACCESS.2019.2921104) (hal-02158846)
M. Alayan, E. Muhr, A. Levisse, Marc Bocquet, Mathieu Moreau, E. Nowak, G. Molas, Elisa Vianello, Jean-Michel Portal, Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays, IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66, pp.748-752 (10.1109/TCSII.2019.2908967) (hal-02158840)
T Hirtzlin, Marc Bocquet, J.-O Klein, E. Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks, IEEE International Conference on Artificial Intellignence Circuits and Systems (AICAS), 2019 (10.1109/AICAS.2019.8771544) (hal-02159142)
Hassen Aziza, Mathieu Moreau, Jean-Michel Portal, Arnaud Virazel, Patrick Girard, A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks, NEWCAS 2019 - 17th IEEE International Conference on Electronics Circuits and Systems, 2019 (10.1109/NEWCAS44328.2019.8961278) (lirmm-02395325)
Philippe Chiquet, Maxime Chambonneau, V. Della Marca, J. Postel-Pellerin, P. Canet, Sarra Souiki Souiki-Figuigui, Guillaume Idda, Jean-Michel Portal, David Grojo, Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser, Scientific Reports, 2019, 9 (10.1038/s41598-019-43344-x) (hal-02137915)
Gilles Micolau, Karine Coulié, Rahajandraibe Wenceslas, Jean-Michel Portal, Hassen Aziza, SITARe: a fast simulation tool for the analysis of disruptive effects on electronics, E3S Web of Conferences, 2019, 88, pp.06002 (10.1051/e3sconf/20198806002) (hal-02617925)
Alexandre Levisse, Pierre-Emmanuel Gaillardon, Bastien Giraud, Ian O'Connor, Jean-Philippe Noël, Mathieu Moreau, Jean-Michel Portal, Resistive Switching Memory Architecture Based on Polarity Controllable Selectors, IEEE Transactions on Nanotechnology, 2019, 18, pp.183-194 (10.1109/TNANO.2018.2887140) (hal-02060199)
Marc Bocquet, T. Hirztlin, J.-O. Klein, E. Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks, 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp.20.6.1-20.6.4 (10.1109/IEDM.2018.8614639) (hal-02011124)
Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Jean-Michel Portal, PCM compact model: Optimized methodology for model card extraction, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, SISPAD 2018, pp.190-193 (10.1109/SISPAD.2018.8551654) (cea-02188521)
Corentin Pigot, Marc Bocquet, Fabien Gilibert, Marina Reyboz, Olga Cueto, V. Della Marca, Paola Zuliani, Jean-Michel Portal, Comprehensive Phase-Change Memory Compact Model for Circuit Simulation, IEEE Transactions on Electron Devices, 2018, pp.1 - 8 (10.1109/TED.2018.2862155) (hal-01869957)
Elena Ioana Vatajelu, Lorena Anghel, Jean-Michel Portal, Marc Bocquet, Guillaume Prenat, Resistive and spintronic RAMs: device, simulation, and applications, IOLTS 2018 - IEEE 24th International Symposium on On-Line Testing And Robust System Design, 2018, pp.109-114 (10.1109/IOLTS.2018.8474226) (hal-01976583)
T. Kempf, V. Della Marca, P. Canet, A. Regnier, P. Masson, Jean-Michel Portal, A new method for test chip and single 40nm NOR Flash cell electrical parameters correlation using a CAST structure, 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018 (10.1109/VLSI-TSA.2018.8403859) (hal-01900783)
Hassen Aziza, A. Pérez, Jean-Michel Portal, Resistive RAMs as analog trimming elements, Solid-State Electronics, 2018, 142, pp.52 - 55 (10.1016/j.sse.2018.02.005) (hal-01791226)
T. Kempf, V. Della Marca, L. Baron, F. Maugain, F. La Rosa, S. Niel, A. Regnier, Jean-Michel Portal, P. Masson, Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip, IEEE International Reliability Physics Symposium (IRPS 2018), 2018 (10.1109/IRPS.2018.8353642) (hal-01900771)
W. Steve Ngueya, Jean-Michel Portal, Hassen Aziza, Julien Mellier, Stephane Ricard, An Ultra-Low Power and High Performance Single Ended Sense Amplifier for Low Voltage Flash Memories, Journal of Low Power Electronics, 2018, 14, pp.157 - 169 (10.1166/jolpe.2018.1543) (hal-01791223)
Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, Jean-Michel Portal, Phase-Change Memory: A Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching, Japanese Journal of Applied Physics, 2018, 57 (10.7567/JJAP.57.04FE13) (hal-01737915)
M. Alayan, E. Vianello, G. Navarro, C. Carabasse, S. La Barbera, A. Verdy, N. Castellani, A. Levisse, G. Molas, L. Grenouillet, T. Magis, F. Aussenac, M. Bernard, B. Desalvo, Jean-Michel Portal, E. Nowak, In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors, 2017 IEEE International Electron Devices Meeting (IEDM), 2017 (10.1109/IEDM.2017.8268311) (hal-01791221)
W. Steve Ngueya, Jean-Michel Portal, Hassen Aziza, Julien Mellier, Stephane Ricard, A Power Efficient Regulated Charge Pump Based on Charge Sharing for Contactless Devices: An Alternative to Four-Phase Charge Pumps, Journal of Low Power Electronics, 2017, 13, pp.595-604 () (hal-01791261)
W. Steve Ngueya, Julien Mellier, Stephane Ricard, Jean-Michel Portal, Hassen Aziza, Power efficiency optimization of charge pumps in embedded low voltage NOR flash memory, 2017 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), 2017 (10.1109/NORCHIP.2017.8124949) (hal-01788152)
Thibault Kempf, Marc Mantelli, François Maugain, Arnaud Regnier, Jean-Michel Portal, Pascal Masson, Jean-Michel Moragues, Marjorie Hesse, V. Della Marca, Julien Franck, Stephan Niel, Impact of CMOS Post Nitridation Annealing on Reliability of 40nm 512kB Embedded Flash Array, 2017 IEEE International Integrated Reliability Workshop (IIRW), 2017 () (hal-01900747)
W. Steve Ngueya, Julien Mellier, Stephane Ricard, Jean-Michel Portal, Hassen Aziza, High voltage recycling scheme to improve power consumption of regulated charge pumps, 2017 27th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS), 2017 (10.1109/PATMOS.2017.8106995) (hal-01788150)
Steve Ngueya W., Julien Mellier, Stephane Ricard, Jean-Michel Portal, Hassen Aziza, An Ultra-Low Power and High Speed Single Ended Sense Amplifier for Non-Volatile Memories, 2017 New Generation of CAS (NGCAS), 2017 (10.1109/NGCAS.2017.33) (hal-01788149)
Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, Jean-Michel Portal, Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory, 49th International Conference on Solid State Devices and Materals, 2017 () (hal-01737914)
Jean-Michel Portal, Marc Bocquet, Santhosh Onkaraiah, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Kholdoun Torki, Elisa Vianello, Alexandre Levisse, Bastien Giraud, Olivier P Thomas, Fabien Clermidy, Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology, IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686 (10.1109/TNANO.2017.2703985) (hal-01745418)
A Krakovinsky, Marc Bocquet, R Wacquez, J. Coignus, Jean-Michel Portal, Thermal Laser Attack and High Temperature Heating on HfO2-based OxRAM Cells, International Symposium on On-Line Testing and Robust System Design, 2017 () (hal-01737925)
Alexandre Levisse, P. Royer, Bastien Giraud, J.P. Nöel, Mathieu Moreau, Jean-Michel Portal, Architecture, design and technology guidelines for crosspoint memories, 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2017, 16, pp.677 - 686 (10.1109/NANOARCH.2017.8053733) (hal-01788148)
M. Nataraj, A. Levisse, B. Giraud, J.P. Noel, P. Meinerzhagen, Jean-Michel Portal, P.-E. Gaillardon, Design methodology for area and energy efficient OxRAM-based non-volatile flip-flop, 2017 IEEE International Symposium on Circuits and Systems (ISCAS), 2017 (10.1109/ISCAS.2017.8050759) (hal-01788146)
Mouhamad Alayan, Elisa Vianello, Luca Larcher, Andrea Padovani, Alexandre Levisse, Niccolo Castellani, Christelle Charpin, Sophie Bernasconi, Gabriel Molas, Jean-Michel Portal, Barbara de Salvo, Luca Perniola, Self-Rectifying Behavior and Analog Switching under Identical Pulses Using Tri-Layer RRAM Crossbar Array for Neuromorphic Systems, 2017 IEEE International Memory Workshop (IMW), 2017 (10.1109/IMW.2017.7939102) (hal-01788143)
Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 (10.1109/ULIS.2017.7962594) (hal-01745666)
A. Levisse, B. Giraud, J.P. Noel, Mathieu Moreau, Jean-Michel Portal, High density emerging resistive memories: What are the limits?, 2017 IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS), 2017 (10.1109/LASCAS.2017.7948104) (hal-01788136)
M. Alayan, E. Vianello, L. Larcher, A. Padovani, A. Levisse, N. Castellani, C. Charpin, Stefano Bernasconi, G. Molas, Jean-Michel Portal, B. de Salvo, L. Perniola, Self-rectifying Behavior and Analog Switching Under Identical Pulses Using Tri-layer RRAM Crossbar Array for Neuromorphic Systems, 2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2017, pp.141-144 () (hal-01694462)
Maxime Chambonneau, Sarra Souiki Souiki-Figuigui, Philippe Chiquet, Vincenzo Della Marca, J. Postel-Pellerin, P. Canet, Jean-Michel Portal, David Grojo, Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations, Applied Physics Letters, 2017, 110, pp.161112 - 161112 () (hal-01655116)
Thomas Sarno, Romain Wacquez, Edith Kussener, Philippe Maurine, Khalil Jradi, Jean-Michel Portal, Driss Aboulkassimi, Sarra Souiki-Figuigui, J. Postel-Pellerin, P. Canet, Maxime Chambonneau, David Grojo, Electromagnetic Analysis Perturbation using Chaos Generator, Truedevice 2016, 2016 () (hal-01455446)
Hassen Aziza, Jean-Michel Portal, Resistive RAM Variability Monitoring using a Ring Oscillator based Test Chip, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), 2016 () (hal-01463136)
Hassen Aziza, Jean-Michel Portal, Resistive RAM variability monitoring using a ring oscillator based test chip, Microelectronics Reliability, 2016, 64, pp.59-62 (10.1016/j.microrel.2016.07.097) (hal-01434980)
G. Piccolboni, M. Parise, G. Molas, A. Levisse, Jean-Michel Portal, R. Coquand, C. Carabasse, M. Bernard, A. Roule, J.P. Noel, B. Giraud, M. Harrand, C. Cagli, T. Magis, E. Vianello, B. de Salvo, Gérard Ghibaudo, L. Perniola, Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives, 2016 IEEE 8th International Memory Workshop (IMW), 2016 (10.1109/IMW.2016.7495296) (hal-01451884)
Francesco Maria Puglisi, Damien Deleruyelle, Jean-Michel Portal, Paolo Pavan, Luca Larcher, A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology, physica status solidi (a), 2016, 213, pp.289-301 (10.1002/pssa.201532828) (hal-01435201)
K. Coulié, Rahajandraibe Wenceslas, G. Micolau, Hassen Aziza, Jean-Michel Portal, Optimization of a Particles Detection Chain Based on a VCO Structure, Journal of Electronic Testing: : Theory and Applications, 2016, 32, pp.21-30 (10.1007/s10836-016-5563-7) (hal-01434958)
Alexandre Levisse, Bastien Giraud, Jean-Philippe Noël, Mathieu Moreau, Jean-Michel Portal, Capacitor based SneakPath compensation circuit for transistor-less ReRAM architectures, Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016, pp.7-12 (10.1145/2950067.2950073) (hal-01435118)
G. Molas, G. Piccolboni, M. Barci, B. Traore, J. Guy, G. Palma, E. Vianello, P. Blaise, Jean-Michel Portal, Marc Bocquet, A. Levisse, B. Giraud, J. P. Noel, M. Harrand, M. Bernard, A. Route, B. de Salvo, L. Perniola, Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications, 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2016 () (hal-01435224)
A. Krakovinsky, Marc Bocquet, R. Wacquez, J. Coignus, Damien Deleruyelle, Cédric Djaou, G. Reimbold, Jean-Michel Portal, Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity, 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, pp.152-156 () (hal-01435097)
Hassen Aziza, H. Ayari, S. Onkaraiah, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation, 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), 2016, pp.1-5 (10.1109/DTIS.2016.7483892) (hal-01434981)
Steve W. Ngueya, Julien Mellier, Stephane Ricard, Jean-Michel Portal, Hassen Aziza, Ultra Low Power Charge Pump with Multi-Step Charging and Charge Sharing, 2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2016 () (hal-01435238)
V. Della Marca, M. Chambonneau, S. Souiki-Figuigui, J. Postel-Pellerin, P. Canet, Philippe Chiquet, Edith Kussener, F. Yengui, R. Wacquez, David Grojo, Jean-Michel Portal, M. Lisart, NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests, 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016 (10.1109/IRPS.2016.7574580) (hal-01418479)
Alexandre Levisse, Bastien Giraud, Jean-Philippe Noël, Mathieu Moreau, Jean-Michel Portal, SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architectures, 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015 (10.1109/NVMTS.2015.7457426) (hal-01745689)
K. Coulié, S. Ben Krit, Rahajandraibe Wenceslas, G. Micolau, Hassen Aziza, Jean-Michel Portal, Development of a CMOS oscillator chain for particle detection based on SOI technology, 2015 4th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA), 2015, pp.1-5 () (hal-02031850)
Rahajandraibe Wenceslas, Fayrouz. Haddad, Hassen Aziza, K. Coulié, Jean-Michel Portal, Low cost built-in-tuning of on-chip passive filters for low-if double quadrature rf receiver, 2015 16th Latin-American Test Symposium (LATS), 2015 (10.1109/LATW.2015.7102501) (hal-01895519)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM, Solid-State Electronics, 2015, 103, pp.73 - 78 (10.1016/j.sse.2014.09.005) (hal-01737300)
S. Ben Krit, K. Coulié, Rahajandraibe Wenceslas, Laurent Ottaviani, Gilles Micolau, Hassen Aziza, Jean-Michel Portal, Comparison of a readout chain dedicated to the signal conditioning of a particle detector and an innovative chain based on a VCO concept, 15. European Conference on Radiation and Its Effects on Components and Systems (Radecs), 2015, pp.np () (hal-01594142)
K. Coulié, Rahajandraibe Wenceslas, Hassen Aziza, Jean-Michel Portal, Gilles Micolau, Improvement of a detection chain based on a VCO concept for microelectronic reliability under natural radiative environment, 16. Latin-American Test Symposium (LATS)), 2015, pp.np () (hal-01595709)
Hassen Aziza, Haytem Ayari, Santhosh Onkaraiah, Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability, 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 (10.1109/DFT.2014.6962107) (hal-01745718)
A El Amraoui, Marc Bocquet, F. Barros, Jean-Michel Portal, M. Charbonneau, S. Jacob, J. Bablet, M. Benwadih, Viktor Fischer, R. Coppard, R. Gwoziecky, Printed complementary organic thin film transistors based decoder for ferroelectric memory, ESSCIRC 2014 - 40th European Solid State Circuits Conference, 2014 (10.1109/ESSCIRC.2014.6942034) (hal-01738468)
Ogun Turkyilmaz, Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, H. Hraziia, Costin Anghel, Jean-Michel Portal, Marc Bocquet, RRAM-based FPGA for “Normally Off, Instantly On” applications, Journal of Parallel and Distributed Computing, 2014, 74, pp.2441 - 2451 (10.1016/j.jpdc.2013.08.003) (hal-01743243)
Natalija Jovanovic, Olivier P Thomas, Elisa Vianello, Jean-Michel Portal, Boris Nikolic, Naviner Lirida, OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI, 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), 2014 (10.1109/NEWCAS.2014.6934003) (hal-02288534)
Jean-Michel Portal, Marc Bocquet, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Yue Zhang, Wang Kang, Jacques-Olivier O Klein, Youguang Zhang, Claude Chappert, Weisheng Zhao, An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies, Journal of Electronic Science and Technology, 2014, 12, pp.173 - 181 (10.3969/j.issn.1674-862X.2014.02.007) (hal-01745646)
Fabien Clermidy, Natalija Jovanovic, Santhosh Onkaraiah, Houcine Oucheikh, Olivier P Thomas, Ogun Turkyilmaz, Elisa Vianello, Jean-Michel Portal, Marc Bocquet, Resistive memories: Which applications?, Design Automation and Test in Europe, 2014 (10.7873/DATE.2014.282) (hal-01804664)
Rahajandraibe Wenceslas, Fayrouz. Haddad, Hassen Aziza, Karine Coulié-Castellani, Jean-Michel Portal, Low Power Radio Frequency Transceiver with Built-In-Tuning of the Local Oscillator for Open Loop Modulation, Journal of Low Power Electronics, 2014, 10, pp.173-181 () (hal-02025270)
Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal, Thomas Cabout, Eric Jalaguier, Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories, IEEE Transactions on Electron Devices, 2014, 61, pp.674 - 681 (10.1109/TED.2013.2296793) (hal-01737291)
Weisheng Zhao, Mathieu Moreau, Erya Deng, Yue Zhang, Jean-Michel Portal, Jacques-Olivier O Klein, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, D. Querlioz, Nesrine Ben Romdhane, Dafiné Ravelosona, Claude Chappert, Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories, IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61, pp.443 - 454 (10.1109/TCSI.2013.2278332) (hal-01743999)
Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, Jean-Michel Portal, Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM), Journal of Low Power Electronics and Applications, 2014, 4, pp.1-14 (10.3390/jlpea4010001) (hal-01737320)
Rahajandraibe Wenceslas, Fayrouz. Haddad, Hassen Aziza, K. Coulié, Jean-Michel Portal, Low Power RF Transceiver with Built-In-Tuning of the Local Oscillator for Open Loop Modulation, Journal of Low Power Electronics, 2014 () (hal-01870147)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, Single-ended sense amplifier robustness evaluation for OxRRAM technology, 2013 IEEE Design and Test Symposium (IDT), 2013 (10.1109/IDT.2013.6727097) (hal-01745737)
Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs, International Semiconductor Device Research Symposium, 2013 () (hal-01745729)
Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller, A novel test structure for OxRRAM process variability evaluation, Microelectronics Reliability, 2013, 53, pp.1208 - 1212 (10.1016/j.microrel.2013.07.012) (hal-01745650)
Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Yue Zhang, Erya Deng, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao, Analytical study of complementary memristive synchronous logic gates, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2013 (10.1109/NanoArch.2013.6623047) (hal-01745759)
M Zhang, Yousra Chabchoub, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng S Zhao, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, C Muller, Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells, 11th International New Circuits and Systems Conference (NEWCAS), 2013 (10.1109/NEWCAS.2013.6573578) (hal-01840795)
Fayrouz. Haddad, Rahajandraibe Wenceslas, Hassen Aziza, K. Coulié, Jean-Michel Portal, On the investigation of built-in tuning of RF receivers using on-chip polyphase filters, 2013 IEEE 31st VLSI Test Symposium (VTS), 2013 (10.1109/VTS.2013.6548932) (hal-01895498)
K. Coulié, Marc Bocquet, Hassen Aziza, Jean-Michel Portal, Rahajandraibe Wenceslas, Christophe Muller, SPICE level analysis of Single Event Effects in an OxRRAM cell, 2013 14th Latin American Test Workshop - LATW, 2013 (10.1109/LATW.2013.6562684) (hal-01804661)
Rahajandraibe Wenceslas, Fayrouz. Haddad, Hassen Aziza, K. Coulié, Jean-Michel Portal, Built-in tuning of the local oscillator for open loop modulation of low cost, low power RF transceiver, 2013 14th Latin American Test Workshop - LATW, 2013 (10.1109/LATW.2013.6562686) (hal-01895505)
K. Coulié, Hassen Aziza, Rahajandraibe Wenceslas, Gilles Micolau, Jean-Michel Portal, Development of a CMOS Oscillator Concept for Particle Detection and Tracking Nuclear Science., IEEE Transactions on Nuclear Science, 2013 () (hal-01315364)
H. Hraziia, Adam Makosiej, Giorgio Palma, Jean-Michel Portal, Marc Bocquet, Olivier Thomas, Fabien Clermidy, Marina Reyboz, Santhosh Onkaraiah, Christophe Muller, Damien Deleruyelle, Andrei Vladimirescu, Amara Amara, Costin Anghel, Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up, Solid-State Electronics, 2013, 90, pp.99-106 (10.1016/j.sse.2013.02.045) (hal-01744003)
Guillaume Just, V. Della Marca, Arnaud Regnier, Jean-Luc Ogier, J. Postel-Pellerin, Jean-Michel Portal, Pascal Le Masson, Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability, Journal of Low Power Electronics, 2012, 8, pp.717 - 724 (10.1166/jolpe.2012.1230) (hal-01760474)
G. Micolau, K. Coulié, Hassen Aziza, Jean-Michel Portal, Contribution to SER Prediction: A New Metric Based on RC Transient Simulations, IEEE Transactions on Nuclear Science, 2012, 59, pp.797-802 () (hal-02025262)
Weisheng Zhao, M Zhang, Jacques-Olivier Klein, D. Querlioz, Dafine Ravelosona, Claude Chappert, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Crossbar architecture based on 2R complementary resistive switching memory cell, 2012 IEEE/ACM International Symposium on Nanoscale Architectures, 2012 (10.1145/2765491.2765508) (hal-01745351)
Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, Jean-Michel Portal, Marc Bocquet, Christophe Muller, H. Hraziia, Costin Anghel, Amara Amara, Bipolar ReRAM Based Non-‐Volatile Flip-‐flops for Low-‐Power Architectures, 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS), 2012 (10.1109/NEWCAS.2012.6329045) (hal-01745498)
K. Coulié, Hassen Aziza, G. Micolau, Jean-Michel Portal, Optimization of SEU Simulations for SRAM Cells Reliability under Radiation, Journal of Electronic Testing: : Theory and Applications, 2012, 28, pp.331-338 () (hal-02025257)
Fayrouz. Haddad, Rahajandraibe Wenceslas, Hassen Aziza, K. Coulié, Jean-Michel Portal, Built-in tuning of RFIC Passive Polyphase Filter by process and thermal monitoring, 2012 13th Latin American Test Workshop - LATW, 2012, pp.1-5 () (hal-02030953)
G. Micolau, K. Coulié, Hassen Aziza, Jean-Michel Portal, SITARe: A simulation tool for analysis and diagnosis of radiation effects, 2012 13th Latin American Test Workshop - LATW, 2012, pp.1-5 () (hal-02030884)
K. Coulié, Hassen Aziza, Rahajandraibe Wenceslas, G. Micolau, Jean-Michel Portal, Investigation of a CMOS oscillator concept for particle detection and diagnosis, 2012 13th Latin American Test Workshop - LATW, 2012, pp.1-5 () (hal-02025655)
Fayrouz. Haddad, Rahajandraibe Wenceslas, Hassen Aziza, K. Coulié, Jean-Michel Portal, Built-in Tunning of RFIC Passive Polyphase Filter by Process and Thermal Monitoring, IEEE Latin-American Test Workshop LATW, 2012 () (hal-01895495)
Jean-Michel Portal, Marc Bocquet, Damien Deleruyelle, Christophe Muller, Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications, Journal of Low Power Electronics, 2012, 8, pp.1 - 10 (10.1166/jolpe.2012.1172) (hal-01745507)
G. Micolau, K. Coulié, Hassen Aziza, Jean-Michel Portal, Contribution to SER prediction: A new metric based on RC transient simulations, 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2011, pp.103-108 () (hal-02025653)
Marc Bocquet, Damien Deleruyelle, Christophe Muller, Jean-Michel Portal, Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories, Applied Physics Letters, 2011, 98 (10.1063/1.3605591) (hal-01779321)
Gnima Toure, Guillaume Hubert, K. Coulié, Sophie Duzellier, Jean-Michel Portal, Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells, IEEE Transactions on Nuclear Science, 2011, 58, pp.862-869 () (hal-02025253)
K. Coulié, Gnima Toure, Jean-Michel Portal, Olivier Ginez, Hassen Aziza, Austin Lesea, Circuit Effect on Collection Mechanisms Involved in Single Event Phenomena: Application to the Response of a NMOS Transistor in a 90 nm SRAM Cell, IEEE Transactions on Nuclear Science, 2011, 58, pp.870-876 (10.1109/tns.2011.2129575) (hal-02025249)
Hassen Aziza, Jean-Michel Portal, K. Coulié, Using design of experiment to diagnose analog blocks geometrical defects: Application to current reference circuits, Technology of Integrated Systems in Nanoscale Era (DTIS), 2011, pp.1-5 () (hal-02025644)
K. Coulié, Jean-Michel Portal, G. Micolau, Hassen Aziza, Analysis of SEU parameters for the study of SRAM cells reliability under radiation, 2011 12th Latin American Test Workshop - LATW, 2011, pp.1-5 () (hal-02025650)
G. Micolau, Hassen Aziza, K. Coulié, Jean-Michel Portal, Impact of SEU configurations on a SRAM cell response at circuit level, 2011 12th Latin American Test Workshop - LATW, 2011, pp.1-5 () (hal-02025647)
Christophe Muller, Damien Deleruyelle, O. Ginez, Jean-Michel Portal, Marc Bocquet, Design challenges for prototypical and emerging memory concepts relying on resistance switching, 2011 IEEE Custom Integrated Circuits Conference (CICC 2011), 2011 (10.1109/CICC.2011.6055316) (hal-01745644)
V. Puget, G. Bossu, P. Masson, P. Mazoyer, R. Ranica, A. Villaret, P. Lorenzini, Jean-Michel Portal, D. Rideau, Gérard Ghibaudo, R. Bouchakour, G. Jacquemod, T. Skotnicki, Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application, IEEE Transactions on Electron Devices, 2010, 57, pp.855-865 () (hal-00596201)
P. Mazoyer, S. Puget, G. Bossu, P. Masson, P. Lorenzini, Jean-Michel Portal, Thin film embedded memory solutions, Current Applied Physics, 2010, 10, pp.e9-e12 () (hal-00519276)
G. Touré, Jean-Michel Portal, G. Hubert, K. Coulié, A. Lesea, Effect of multiple injections on the SEEs in SRAM cell, 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2009, pp.252-255 () (hal-02025643)
S. Puget, G. Bossu, P. Masson, P. Mazoyer, Jean-Michel Portal, P. Lorenzini, D. Rideau, R. Bouchakour, T. Skotnicki, Quantum Effect Modeling in Thin Film Independent Double Gate Capacitorless eDRAM, European Solid-State Device Research Conference (ESSDERC), 2009 () (hal-00524924)
S. Puget, Jean-Michel Portal, P. Masson, P. Mazoyer, G. Bossu, P. Lorenzini, R. Bouchakour, T. Skotnicki, Optimization of Independent Double Gate Floating Body Cell DRAM Performance by Technology Screening, Silicon Nano-Workshop, 2009 () (hal-00858254)
S. Puget, G. Bossu, C. Fenouillet-Beranger, P. Perreau, P. Masson, P. Lorenzini, P. Mazoyer, Jean-Michel Portal, R. Bouchakour, T. Skotnicki, FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications, International Memory Workshop IMW), 2009 () (hal-00524918)
G. Bossu, A. Demolliens, S. Puget, P. Masson, Jean-Michel Portal, R. Bouchakour, P. Mazoyer, T. Skotnicki, A new embedded NVM thin film cell for low voltage applications, International conference on Solid State Devices and Materials (SSDM), 2008 () (hal-00524912)
S. Puget, G. Bossu, F. Berthollet, P. Mazoyer, Jean-Michel Portal, P. Masson, R. Bouchakour, T. Skotnicki, 1TBulk eDRAM Using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power applications, International conference on Solid State Devices and Materials (SSDM), 2008 () (hal-00524913)
S. Puget, G. Bossu, P. Mazoyer, Jean-Michel Portal, P. Masson, R. Bouchakour, T. Skotnicki, On the Potentiality of Planar Independent Double Gate for Capacitorless eDRAM, IEEE Silicon Nanoelectronics Workshop (SNW), 2008, pp.Poster 2-27 () (hal-00524964)
G. Bossu, S. Puget, P. Masson, Jean-Michel Portal, R. Bouchakour, P. Mazoyer, T. Skotnicki, Independent Double Gate - Potential for Non-Volatile Memories, IEEE Silicon Nanoelectronics Workshop (SNW), 2008, pp.Poster 2-23 () (hal-00524965)
S. Puget, G. Bossu, C. Guerin, R. Ranica, A. Villaret, P. Masson, Jean-Michel Portal, R. Bouchakour, P. Mazoyer, V. Huard, T. Skotnicki, 1TBulk eDRAM a reliable concept for nanometre scale high density and low power applications, 2nd International Conference on Memory Technology and Design (ICMTD'07), 2007 () (hal-00525105)
V. Kazpard, B.S. Lartiges, Céline Frochot, Jean-Baptiste D’espinose de Lacaillerie, M.L. L Viriot, Jean-Michel Portal, T. Görner, J.L. Bersillon, Fate of coagulant species and conformational effects during the aggregation of a model of a humic substance with Al13 polycations, Water Research, 2006, 40, pp.1965-1974 (10.1016/j.watres.2006.03.014) (hal-02265622)
A. Regnier, B. Saillet, Jean-Michel Portal, B. Delsuc, R. Laffont, P. Masson, R. Bouchakour, MM11 Based Flash Memory Cell Model Including Characterization Procedure, IEEE International Symposium on Circuits and Systems, 2006, pp.3518-3521 () (hal-00525036)
L. Lopez, Jean-Michel Portal, D. Nee, A New Embedded Measurement Structure for eDRAM Capacitor, DATE'05, 2005, 1, pp.462-463 () (hal-00181649)
Cécile Quantin, E.J. Joner, Jean-Michel Portal, J. Berthelin, PAH dissipation in a contaminated river sediment under oxic and anoxic conditions, Environmental Pollution, 2005, 134, pp.315-322 () (hal-00379875)
Arnaud Regnier, Jean-Michel Portal, Rachid Bouchakour, Michel Renovell, Modeling Halo Implant Failures in MOS Sub-Micron Technology, LATW: Latin American Test Workshop, 2005, pp.29-33 () (lirmm-00106513)
Sandrine Bernardini, P. Masson, Jean-Michel Portal, Jean-Marc J.-M. Galliere, Michel Renovell, Impact of Gate Oxide Reduction Failure on Analog Applications: Example of the Current Mirror, LATW: Latin American Test Workshop, 2004, pp.12-17 () (lirmm-00108659)
Rachid Bouchakour, Jean-Michel Portal, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand, Michel Renovell, A Compact DC Model of Gate Oxide Short Defect, Microelectronic Engineering, 2004, 72, pp.140-148 (10.1016/j.mee.2003.12.051) (lirmm-00108564)
Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand, Jean-Michel Portal, Rachid Bouchakour, GOSMOS: A Gate Oxide Short Defect Embedded in a MOS Compact Model, LATW: Latin American Test Workshop, 2003 () (lirmm-00269604)
Michel Schiavon, Corinne Perrin-Ganier, Jean-Michel Portal, The pollution of water by pesticides : state and origin, Agronomie, 1996, 15, pp.157-170 (10.1051/agro:19950301) (hal-01486304)
Laurent Pieuchot, Corinne Perrin-Ganier, Jean-Michel Portal, Michel Schiavon, Study on the mineralization and degradation of isoproturon in three soils, Chemosphere, 1996, 33, pp.467-478 (10.1016/0045-6535(96)00181-6) (hal-01486318)
Corinne Perrin-Ganier, Michel Schiavon, Jean-Michel Portal, M. Babut, Dégradation de l'isoproturon et disponibilité de ses résidus dans le sol, Weed Research, 1995, 35, pp.257-263 (10.1111/j.1365-3180.1995.tb01788.x) (hal-01486280)
M. Demon, Michel Schiavon, Jean-Michel Portal, C. Munier-Lamy, Seasonal dynamics of atrazine in three soils under outdoor conditions, Chemosphere, 1994, 28, pp.453-466 (10.1016/0045-6535(94)90290-9) (hal-01486323)
Jean-Michel Portal, M. Babut, Michel Schiavon, B. Gerard, Echantillonnage et appréciation de la contamination de l'eau d'un point de captage par les produits phytosanitaires, European journal of water quality - Journal européen d'hydrologie, 1994, 25, pp.135-151 (10.1051/water/19942502135) (hal-01486285)
Corinne Perrin-Ganier, Michel Schiavon, Jean-Michel Portal, M. Babut, C. Breuzin, Alteration of pesticide content in the soil solution collected by a porous cup, Chemosphere, 1994, 29, pp.63-70 (10.1016/0045-6535(94)90090-6) (hal-01486291)
Hassan Aziza, J. Postel-Pellerin, Mathieu Moreau, Experimental Analysis of Oxide-Based RAM Analog Synaptic Behavior, Electronics, 2022, 12, pp.49 (10.3390/electronics12010049) (hal-03941057)
Hassen Aziza, J. Postel-Pellerin, Mathieu Moreau, STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance, IEEE Transactions on Device and Materials Reliability, 2022, 22, pp.500-505 (10.1109/TDMR.2022.3213191) (hal-03941082)
N. Yazigy, J. Postel-Pellerin, V. Della Marca, K. Terziyan, S. Nadifi, R.C. Sousa, P. Canet, G. Di Pendina, Experimental analysis on stochastic behavior of preswitching time in STT-MRAM, Microelectronics Reliability, 2022, 138, pp.114677 (10.1016/j.microrel.2022.114677) (hal-03941025)
F. Matteo, R. Simola, J. Postel-Pellerin, K. Coulié, 1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2022, pp.114621 (10.1016/j.microrel.2022.114621) (hal-03941212)
N. Yazigy, J. Postel-Pellerin, V. Della Marca, K. Terziyan, S. Nadifi, R.C. Sousa, P. Canet, G. Di Pendina, Experimental analysis on stochastic behavior of preswitching time in STT-MRAM, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2022 (10.1016/j.microrel.2022.114677) (hal-03941219)
Franck Matteo, Karine Coulié, Roberto Simola, J. Postel-Pellerin, Franck Melul, Arnaud Regnier, EEPROM endurance degradation at different temperatures: State of the art TCAD simulation, Microelectronics Reliability, 2022, 136, pp.114717 (10.1016/j.microrel.2022.114717) (hal-03941108)
F. Matteo, R. Simola, J. Postel-Pellerin, K. Coulie, Advanced TCAD Simulation of Tunnel Oxide Degradation for EEPROM Applications, IEEE 4th International Conference on Dielectrics (ICD 2022), 2022, pp.764-768 (10.1109/ICD53806.2022.9863611) (hal-03941192)
Hassen Aziza, J. Postel-Pellerin, Hussein Bazzi, Mathieu Moreau, Adnan Harb, STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability, IEEE International Symposium on Circuits and Systems (ISCAS) 2022, 2022, pp.3532-3536 (10.1109/ISCAS48785.2022.9937716) (hal-03941188)
N Yazigy, J. Postel-Pellerin, V. Della Marca, K Terziyan, R C Sousa, P Canet, Gregory Di Pendina, Real-time switching dynamics in STT-MRAM, IEEE Journal of the Electron Devices Society, 2022 (10.1109/jeds.2022.3185324) (hal-03708265)
F. Matteo, R. Simola, J. Postel-Pellerin, K. Coulié, 1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation, Microelectronics Reliability, 2022, 138, pp.114621 (10.1016/j.microrel.2022.114621) (hal-03941091)
Hussein Bazzi, J. Postel-Pellerin, Hassen Aziza, Mathieu Moreau, Adnan Harb, Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation, 2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2020, pp.1-4 (10.1109/DFT50435.2020.9250726) (hal-03504288)
Hassen Aziza, J. Postel-Pellerin, Hussein Bazzi, Pierre Canet, Mathieu Moreau, V. Della Marca, Adnan Harb, True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation, IEEE Transactions on Nanotechnology, 2020, 19, pp.214-222 (10.1109/TNANO.2020.2976735) (hal-03504843)
J. Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, V. Della Marca, Adnan Harb, True random number generation exploiting SET voltage variability in resistive RAM memory arrays, 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 2019, pp.1-5 (10.1109/NVMTS47818.2019.9043369) (hal-03504849)
Hassen Aziza, H. Bazzi, J. Postel-Pellerin, P. Canet, Mathieu Moreau, A. Harb, An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2019 (10.1109/DTIS.2019.8735057) (hal-02306907)
J. Postel-Pellerin, Gilles Micolau, Philippe Chiquet, Maminirina Joelson, Jean-Baptiste Decitre, A global modeling approach of the leakage phenomena in dielectrics, E3S Web of Conferences, 2019, 88, pp.05002 (10.1051/e3sconf/20198805002) (hal-02618292)
Philippe Chiquet, Maxime Chambonneau, V. Della Marca, J. Postel-Pellerin, P. Canet, Sarra Souiki Souiki-Figuigui, Guillaume Idda, Jean-Michel Portal, David Grojo, Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser, Scientific Reports, 2019, 9 (10.1038/s41598-019-43344-x) (hal-02137915)
M. Kharbouche-Harrari, Rana Alhalabi, J. Postel-Pellerin, Romain Wacquez, Driss Aboulkassimi, Etienne Nowak, Ioan Lucian Prejbeanu, Guillaume Prenat, Gregory Di Pendina, MRAM: from STT to SOT, for security and memory, XXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), 2018 () (hal-01982788)
V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, Philippe Chiquet, Marc Bocquet, Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction, Microelectronics Reliability, 2018, 88-90, pp.159 - 163 (10.1016/j.microrel.2018.06.116) (hal-01900789)
M. Kharbouche-Harrari, J. Postel-Pellerin, Gregory Di Pendina, R. Wacquez, D. Aboulkassimi, Marc Bocquet, R. Sousa, R. Delattre, M. Portal, Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues, 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018, 2018, pp.243-244 (10.1109/IOLTS.2018.8474088) (hal-01976697)
Hassen Aziza, P. Canet, J. Postel-Pellerin, Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories, Advances in Science, Technology and Engineering Systems Journal, 2018, 3, pp.11-17 (10.25046/aj030102) (hal-02335339)
Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 (10.1109/ULIS.2017.7962594) (hal-01745666)
Maxime Chambonneau, Sarra Souiki Souiki-Figuigui, Philippe Chiquet, Vincenzo Della Marca, J. Postel-Pellerin, P. Canet, Jean-Michel Portal, David Grojo, Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations, Applied Physics Letters, 2017, 110, pp.161112 - 161112 () (hal-01655116)
Thomas Sarno, Romain Wacquez, Edith Kussener, Philippe Maurine, Khalil Jradi, Jean-Michel Portal, Driss Aboulkassimi, Sarra Souiki-Figuigui, J. Postel-Pellerin, P. Canet, Maxime Chambonneau, David Grojo, Electromagnetic Analysis Perturbation using Chaos Generator, Truedevice 2016, 2016 () (hal-01455446)
J. Postel-Pellerin, Philippe Chiquet, V. Della Marca, Simulation of the programming efficiency and the energy consumption of Flash memories during endurance degradation, International Semiconductor Conference (CAS), 2016, 2016 (10.1109/SMICND.2016.7783052) (hal-01436469)
P. Canet, J. Postel-Pellerin, Hassen Aziza, Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), 2016 () (hal-01463140)
P. Canet, J. Postel-Pellerin, Hassen Aziza, Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories, Microelectronics Reliability, 2016, 64, pp.36-41 (10.1016/j.microrel.2016.07.096) (hal-01434941)
Philippe Chiquet, J. Postel-Pellerin, C. Tuninetti, S. Souiki-Figuigui, P. Masson, Effect Of Short Pulsed Program/Erase Cycling On Flash Memory Devices, Workshop on New Perspectives in Measurements, Tools and Techniques for system’s reliability, maintainability and safety, 2016 () (hal-01437034)
Philippe Chiquet, J. Postel-Pellerin, C. Tuninetti, S. Souiki-Figuigui, P. Masson, Enhancement of flash memory endurance using short pulsed program/erase signals, ACTA IMEKO, 2016, 5, pp.29-36 (10.21014/acta_imeko.v5i4.422) (hal-01451431)
J. Postel-Pellerin, Philippe Chiquet, Gilles Micolau, D. Boyer, Indirect measurement of low tunneling currents through dielectrics using floating gate structures, IEEE International Conference on Dielectrics (ICD), 2016, pp.1065-1068 () (hal-01594071)
G. Micolau, J. Postel-Pellerin, Philippe Chiquet, M. Joelson, C. Abbas, D. Boyer, Caroline Giroux, Toward an innovative stochastic modeling of electric charges losses trough dielectrics, Inter-Disciplinary Underground Science and Technology (i-DUST) Conference, 2016, 12, pp.9 (10.1051/e3sconf/20161204004) (hal-01451874)
V. Della Marca, M. Chambonneau, S. Souiki-Figuigui, J. Postel-Pellerin, P. Canet, Philippe Chiquet, Edith Kussener, F. Yengui, R. Wacquez, David Grojo, Jean-Michel Portal, M. Lisart, NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests, 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016 (10.1109/IRPS.2016.7574580) (hal-01418479)
Jonathan Bartoli, V. Della Marca, J. Postel-Pellerin, Julien Delalleau, Arnaud Regnier, Stephan Niel, Francesco La Rosa, P. Canet, Frédéric Lalande, Optimization of the ATW Non-Volatile Memory for Connected Smart Objects, 2015 IEEE International Memory Workshop (IMW), 2015 (10.1109/IMW.2015.7150299) (hal-01760536)
J. Bartoli, V. Della Marca, J. Delalleau, A. Regnier, S. Niel, F. Rosa, J. Postel-Pellerin, F. Lalande, A new non-volatile memory cell based on the flash architecture for embedded low energy applications: ATW (Asymmetrical Tunnel Window), 2014 International Semiconductor Conference (CAS), 2014 (10.1109/SMICND.2014.6966409) (hal-01760564)
J. Postel-Pellerin, Philippe Chiquet, V. Della Marca, T. Wakrim, G. Just, J.L. Ogier, Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses, 2014 International Semiconductor Conference (CAS), 2014 (10.1109/SMICND.2014.6966433) (hal-01760566)
V. Della Marca, T. Wakrim, J. Postel-Pellerin, P. Canet, Advanced experimental setup for reliability and current consumption measurements of Flash non-volatile memories, IMEKO TC4, 2014 () (hal-01760548)
V. Della Marca, J. Postel-Pellerin, G. Just, P. Canet, J.-L. Ogier, Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories, Microelectronics Reliability, 2014, 54, pp.2262 - 2265 (10.1016/j.microrel.2014.07.063) (hal-01760459)
Philippe Chiquet, Pascal Masson, J. Postel-Pellerin, Romain Laffont, Gilles Micolau, Frédéric Lalande, Arnaud Regnier, Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices, Measurement - Journal of the International Measurement Confederation (IMEKO), 2014, 54, pp.234-240 (10.1016/j.measurement.2014.02.015) (hal-01315418)
Philippe Chiquet, P. Masson, Gilles Micolau, R. Laffont, F. Lalande, J. Postel-Pellerin, A. Regnier, Determination of physical properties of semiconductor-oxide-semiconductor structures using a new fast gate current measurement protocol., 11th IEEE International Conference on Solid Dielectrics, 2013 () (hal-01315415)
V. Della Marca, L. Masoero, J. Postel-Pellerin, F. Lalande, J. Amouroux, J. Delalleau, P. Boivin, J-L. Ogier, G. Molas, Dynamic behavior of silicon nanocrystal memories during the hot carrier injection, IEEE International Conference on Solid Dielectrics (ICSD 2013), 2013 (10.1109/ICSD.2013.6619820) (hal-01760571)
V. Della Marca, J. Amouroux, G. Molas, J. Postel-Pellerin, F. Lalande, P. Boivin, J.-L. Ogier, Improved Performance of Silicon Nanocrystal Memories for Application Working Over a Wide Range of Temperature, ECS Transactions, 2013, 53, pp.129 - 139 (10.1149/05304.0129ecst) (hal-01760473)
V. Della Marca, G. Just, A. Regnier, L. Ogier, R. Simola, S. Niel, J. Postel-Pellerin, F. Lalande, L. Masoero, G. Molas, Push the flash floating gate memories toward the future low energy application, Solid-State Electronics, 2013, 79, pp.210 - 217 (10.1016/j.sse.2012.09.001) (hal-01760461)
Guillaume Just, V. Della Marca, Arnaud Regnier, Jean-Luc Ogier, J. Postel-Pellerin, Jean-Michel Portal, Pascal Le Masson, Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability, Journal of Low Power Electronics, 2012, 8, pp.717 - 724 (10.1166/jolpe.2012.1230) (hal-01760474)
V. Della Marca, J. Amouroux, G. Molas, J. Postel-Pellerin, F. Lalande, P. Boivin, E. Jalaguier, B. de Salvo, J.-L. Ogier, How to improve the silicon nanocrystal memory cell performances for low power applications, 2012 International Semiconductor Conference (CAS 2012), 2012 (10.1109/SMICND.2012.6400686) (hal-01760587)
V. Della Marca, L. Masoero, G. Molas, J. Amouroux, E. Petit-Faivre, J. Postel-Pellerin, F. Lalande, E. Jalaguier, S. Deleonibus, B. de Salvo, P. Boivin, J-L. Ogier, Optimization of programming consumption of silicon nanocrystal memories for low power applications, 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD), 2012 (10.1109/ISCDG.2012.6359988) (hal-01760573)
V. Della Marca, A. Regnier, J. Ogier, R. Simola, S. Niel, J. Postel-Pellerin, F. Lalande, G. Molas, Experimental study to push the Flash floating gate memories toward low energy applications, 2011 International Semiconductor Device Research Symposium (ISDRS), 2011, pp.73 - 77 (10.1109/ISDRS.2011.6135271) (hal-01760595)
V. Della Marca, Julien Amouroux, Julien Delalleau, Laurent Lopez, Jean-Luc Ogier, J. Postel-Pellerin, Frédéric Lalande, Gabriel Molas, Energy consumption optimization in nonvolatile silicon nanocrystal memories, 2011 International Semiconductor Conference (CAS 2011), 2011 (10.1109/SMICND.2011.6095810) (hal-01760593)