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Amani Migaou,
Brice Sarpi,
Mathilde Guiltat,
Kevin Payen,
Rachid Daineche,
Georges Landa,
S. Vizzini,
Anne Hémeryck,
A perfect wetting of Mg monolayer on Ag(111) under atomic scale investigation: first principles calculations, scanning tunneling microscopy and Auger spectroscopy, The Journal of Chemical Physics, 2016, 144, pp.194708
(10.1063/1.4949764)
(hal-01407766) |
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Sarpi Brice,
Rachid Daineche,
Christophe Girardeaux,
Anne Hémeryck,
S. Vizzini,
Ultra-thin MgO(111)-polar sheets grown onto Ag(111), Applied Surface Science, 2016, 361, pp.259-264
(10.1016/j.apsusc.2015.11.176)
(hal-01407771) |
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Sarpi Brice,
Nabil Rochdi,
Rachid Daineche,
M. Bertoglio,
Christophe Girardeaux,
Alain Baronnet,
Jacques Perrin Toinin,
Marc Bocquet,
Mehdi Djafari-Rouhani,
Anne Hémeryck,
S. Vizzini,
Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure, Surface Science Letters, 2015, 642, pp.L1-L5
(10.1016/j.susc.2015.08.003)
(hal-01496546) |
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B. Sarpi,
N. Rochdi,
Rachid Daineche,
M. Bertoglio,
Christophe Girardeaux,
Alain Baronnet,
J. Perrin-Toinin,
Michael Bocquet,
M. Djafari Rouhani,
A. Hemeryck,
S. Vizzini,
Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg 2 Si (11–1)/Si (100) heterostructure, Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2015, 642, pp.L1-L5
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(hal-02044833) |
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E. Salançon,
Rachid Daineche,
Olivier Grauby,
Roger Morin,
Single mineral particles makes an electron point source, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2015, 33, pp.030601
(10.1116/1.4916237)
(hal-01140819) |
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S Sarpi,
Rachid Daineche,
Christophe Girardeaux,
M. Bertoglio,
F Derivaux,
J P Biberian,
Anne Hémeryck,
S. Vizzini,
Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer, Applied Physics Letters, 2015, 106, pp.021604
(10.1063/1.4905592)
(hal-01496559) |
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T.K.P. Luong,
A. Ghrib,
M.T. Dau,
M.A. Zrir,
M. Stoffel,
V. Le Thanh,
Rachid Daineche,
T.G. Le,
Vasile Heresanu,
Omar Abbes,
Matthieu Petit,
M. El Kurdi,
Philippe Boucaud,
H. Rinnert,
J. Murota,
Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source, Thin Solid Films, 2014, 557, pp.70-75
(10.1016/j.tsf.2013.11.027)
(hal-00975160) |
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Gabrielle Regula,
Maryse Lancin,
Bernard Pichaud,
Thomas Neisius,
Rachid Daineche,
Sandrine Juillaguet,
Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity, Philosophical Magazine, 2013, 93, pp.1317-1325
(10.1080/14786435.2012.745018)
(hal-01936279) |
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Stéphane Biondo,
Mihai Lazar,
Laurent Ottaviani,
Wilfried Vervisch,
Olivier Palais,
Rachid Daineche,
Dominique Planson,
Frédéric Milesi,
Julian Duchaine,
Frank Torregrosa,
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour, HeteroSiC & WASMPE 2011, 2011, 711, pp.114-117
(10.4028/www.scientific.net/MSF.711.114)
(hal-00661511) |
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M.T. Dau,
V. Lethanh,
T.G. Le,
A. Spiesser,
Matthieu Petit,
Lisa Michez,
Rachid Daineche,
Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption, Applied Physics Letters, 2011, 99, pp.151908
(10.1063/1.3651488)
(hal-00696025) |
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Ivan Blum,
Alain Portavoce,
Dominique Mangelinck,
Jean Bernardini,
Khalid Hoummada,
Rachid Daineche,
János Lábár,
Véronique Carron,
Simultaneous Measurements of Lattice and Grain Boundary Diffusion Coefficients via 2-Dimensional Simulations, Defect and Diffusion Forum, 2010, 297-301, pp.978-983
(10.4028/www.scientific.net/DDF.297-301.978)
(hal-02394022) |
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Dominique Mangelinck,
Khalid Hoummada,
Alain Portavoce,
Carine Perrin,
Rachid Daineche,
Marion Descoins,
David Larson,
Peter Clifton,
Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si, Scripta Materialia, 2010, 62, pp.568-571
(10.1016/j.scriptamat.2009.12.044)
(hal-02386103) |
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Alain Portavoce,
Nicolas Rodriguez,
Rachid Daineche,
C. Grosjean,
Christophe Girardeaux,
Correction of secondary ion mass spectrometry profiles for atom diffusion measurements, Materials Letters, 2009, 63, pp.676-678
(10.1016/j.matlet.2008.12.018)
(emse-00429559) |
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A. Portavoce,
N. Rodriguez,
Rachid Daineche,
C. Grosjean,
Christophe Girardeaux,
Correction of secondary ion mass spectrometry profiles for atom diffusion measurements, Materials Letters, 2009, 63, pp.676-678
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(hal-02044979) |
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Ivan Blum,
A. Portavoce,
Dominique Mangelinck,
Rachid Daineche,
K. Hoummada,
János L. Lábár,
V. Carron,
C. Perrin,
Lattice and grain-boundary diffusion of As in Ni2Si, Journal of Applied Physics, 2008, 104, pp.114312
(10.1063/1.3035836)
(hal-02127829) |
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Alain Degiovanni,
Rachid Daineche,
Olivier Grauby,
Roger Morin,
Source of low-energy coherent electron beams, Applied Physics Letters, 2006, 88
(10.1063/1.2161942)
(hal-01784335) |
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Rachid Daineche,
A. Degiovanni,
Olivier Grauby,
Roger Morin,
Source of low-energy coherent electron beams, Applied Physics Letters, 2006, 88, pp.023101
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(hal-00017187) |
