Equipe Effets des Radiations et Fiabilité Electrique (ERFE)
Responsable d'équipe :
Daniela MUNTEANU
- Accueil
- Membre(s) de l'équipe :
- Publications
Site Campus de Saint Jérôme
Bâtiment H. Poincaré
Mots clefs
Effets des radiations, fiabilité électrique
Equipements spécifiques :
Plateforme ASTEP
Compteur de particules alpha XIA UltraLo-1800
Chambre d’irradiation alpha sous vide, détecteurs ORTEC
Détecteur de radon RAD7
Irradiateur rayons X 10 keV
Chambre à brouillard automatisée et instrumentée (caméra vidéo)
Moniteur neutrons
Spectromètres à muons atmosphériques
Télescope à muons
Différents bancs de mesures RTSER (real-time soft error rate) pour les technologies 65, 40 et 28 nm
Moniteurs de radiations naturelles à base de capteurs CCD et CMOS
Stations de calcul CPU/GPU
Laboratoire d’électronique et de prototypage (micromécanique, imprimante 3D)
Collaborations
- STMicroelectronics (Crolles, Rousset)
- DGA,
- EASII-IC
- IES-CNRS (Montpellier)
Daniela MUNTEANU
permanent
Jean-Luc AUTRAN
Professeur des Universités
Alain BRAVAIX
permanent
Didier GOGUENHEIM
permanent
Guénolé LALLEMENT
Non permanent
Victor MALHERBE
Non permanent
Souhir MHIRA
Non permanent
Soilihi MOINDJIE
Non permanent
Hector SILVA DIAZ
Non permanent
Zakarya TALBI
Stagiaire
Publications
| Publications |
|---|
| Soilihi Moindje, Daniela Munteanu, Jean-Luc Autran, Victor Malherbe, Gilles Gasiot, Philippe Roche, Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), 2023 () (hal-04177735) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Martin Dentan, Philippe Moreau, Francis-Pierre Pellissier, Benjamin Santraine, Jérôme Bucalossi, Victor Malherbe, Thomas Thery, Gilles Gasiot, Philippe Roche, Matteo Cecchetto, Rubén García Alía, Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak, European Workshop on Radiation and its Effects on Components and Systems (RADECS 2023), 2023 () (hal-04139407) |
| Daniela Munteanu, Jean-Luc Autran, Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation, Electronics, 2023, 12, pp.4468 (10.3390/electronics12214468) (hal-04265835) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Victor Malherbe, Gilles Gasiot, Philippe Roche, Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs, Microelectronics Reliability, 2023, pp.115181 (10.1016/j.microrel.2023.115181) (hal-04194288) |
| Jean-Luc Autran, Daniela Munteanu, New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices, Journal of Applied Physics, 2023, 134, pp.175701 (10.1063/5.0156698) (hal-04241142) |
| Jean-Luc Autran, Daniela Munteanu, Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits, IEEE Transactions on Nuclear Science, 2023, 70, pp.782-791 (10.1109/TNS.2023.3263106) (hal-04059844) |
| Martin Dentan, Gianluca Borgese, Jean-Luc Autran, Daniela Munteanu, Soilihi Moindjie, Philippe Moreau, Francis-Pierre Pellissier, Benjamin Santraine, Jérôme Bucalossi, Philippe Roche, Victor Malherbe, Matteo Cecchetto, García Alía Rubén, Preliminary Study of Electronics Reliability in ITER Neutron Environment, European Workshop on Radiation and its Effects on Components and Systems (RADECS 2022), 2022 () (hal-03735989) |
| Jean-Luc Autran, Daniela Munteanu, Multi-scale, multi-physics modeling and simulation of single-event effects at device and circuit levels, IEEE Nuclear and Space Radiation Effects Conference (NSREC 2022), 2022 () (hal-03796081) |
| Jean-Luc Autran, Soilihi Moindjie, Daniela Munteanu, Martin Dentan, Philippe Moreau, Francis-Pierre P Pellissier, Jérôme Bucalossi, Gianluca Borgese, Victor Malherbe, Thomas Thery, Gilles Gasiot, Philipe Roche, Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak during D-D Plasma Operation, IEEE Transactions on Nuclear Science, 2022, 69, pp.1-1 (10.1109/TNS.2022.3149160) (hal-03575419) |
| Jean-Luc Autran, Daniela Munteanu, Electronics reliability of future power fusion machines: numerical investigations at silicon level, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), 2021 () (hal-03358419) |
| Daniela Munteanu, Jean-Luc Autran, Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), 2021 () (hal-03358407) |
| Soilihi Moindjie, Daniela Munteanu, M. Dentan, P. Moreau, F. P. Pellissier, J. Bucalossi, G. Borgese, V. Malherbe, T. Thery, G. Gasiot, P. Roche, Jean-Luc Autran, Real-Time Characterization of Neutron-induced SEUs in Fusion Experiment at WEST Tokamak during D-D Plasma Operation, IEEE Nuclear and Space Radiation Effects Conference (NSREC 2021), 2021 () (hal-03359535) |
| Jean-Luc Autran, Daniela Munteanu, Electronics reliability assessment of future power fusion machines: neutron interaction analysis in bulk silicon, Microelectronics Reliability, 2021 (10.1016/j.microrel.2021.114223) (hal-03358441) |
| Daniela Munteanu, Soilihi Moindjie, Jean-Luc Autran, Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons, Microelectronics Reliability, 2021 (10.1016/j.microrel.2021.114256) (hal-03358432) |
| Jean-Luc Autran, Daniela Munteanu, Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors, IEEE Transactions on Nuclear Science, 2020, 67, pp.1428-1435 (10.1109/TNS.2020.2971611) (hal-02473107) |
| Jean-Luc Autran, Daniela Munteanu, Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors, European Workshop on Radiation and its Effects on Components and Systems (RADECS 2019), 2019 () (hal-02263545) |
| Daniela Munteanu, Jean-Luc Autran, Terrestrial Neutron-Induced Single Events in GaN, 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), 2019 () (hal-02263529) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Modeling and Simulation of SEU in Bulk Si and Ge SRAM, 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), 2019 () (hal-02263530) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Modeling and Simulation of SEU in Bulk Si and Ge SRAM, Microelectronics Reliability, 2019, 100-101, pp.113390 (10.1016/j.microrel.2019.06.082) (hal-02263527) |
| Daniela Munteanu, Jean-Luc Autran, Terrestrial Neutron-Induced Single Events in GaN, Microelectronics Reliability, 2019, 100-101, pp.113357 (10.1016/j.microrel.2019.06.049) (hal-02263526) |
| Daniela Munteanu, Soilihi Moindjie, Jean-Luc Autran, A water tank muon spectrometer for the characterization of low energy atmospheric muons, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019, 933, pp.12-17 (10.1016/j.nima.2019.03.061) (hal-02087354) |
| Jean-Luc Autran, Daniela Munteanu, Effet des neutrons atmosphériques sur l'électronique SiC et GaN, Journée du Groupement des Industries Françaises Aéronautiques et Spatiales, GIFAS 2018, 2018 () (hal-02100118) |
| Jean-Luc Autran, Daniela Munteanu, Tarek Saad Saoud, Soilihi Moindjie, Characterization of atmospheric muons at sea level using a cosmic ray telescope, Nucl.Instrum.Meth.A, 2018, 903, pp.77-84 (10.1016/j.nima.2018.06.038) (hal-01846825) |
| Daniela Munteanu, Jean-Luc Autran, Soilihi Moindjie, Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation, 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), 2017 () (hal-01787612) |
| Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche, Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs, 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), 2017 () (hal-01787603) |
| Daniela Munteanu, Jean-Luc Autran, S. Moindjie, Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation, Microelectronics Reliability, 2017, 76, pp.719-724 (10.1016/j.microrel.2017.07.040) (hal-01693979) |
| Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche, Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs, Microelectronics Reliability, 2017, 76, pp.53-57 (10.1016/j.microrel.2017.07.045) (hal-01693984) |
| Jean-Luc Autran, Daniela Munteanu, Single Event Effects: the effects of Single particles on electronics. Space, aerospace and ground, ANNIMA 2017, 2017 () (hal-01788355) |
| Jean-Luc Autran, Daniela Munteanu, S. Moindjie, T. Saad Saoud, G. Gasiot, P. Roche, Real-time soft error rate measurements on bulk 40nm SRAM memories: a five-year dual-site experiment, Semiconductor Science and Technology, 2016, 31 (10.1088/0268-1242/31/11/114003) (hal-01430070) |
| T. Saad Saoud, S. Moindjie, Daniela Munteanu, Jean-Luc Autran, Natural radiation events in CCD imager at ground level, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2016 () (hal-01456909) |
| M.S. Rodrigues, J. Borges, C. Gabor, Daniela Munteanu, M. Apreutesei, Philippe Steyer, C. Lopes, P. Pedrosa, E. Alves, N.P. Barradas, L. Cunha, D. Martínez-Martínez, F. Vaz, Functional behaviour of TiO2 films doped with noble metals, Surface Engineering, 2016, 32, pp.554-561 (10.1179/1743294415Y.0000000085) (hal-01804471) |
| T Saad Saoud, S Moindjie, Daniela Munteanu, Jean-Luc Autran, Natural radiation events in CCD imagers at ground level, Microelectronics Reliability, 2016, 64, pp.68 - 72 (10.1016/j.microrel.2016.07.138) (hal-01427855) |
| Jean-Luc Autran, Daniela Munteanu, Atmospheric radiation and COTS at ground level, ESREF Conference, 2015 () (hal-02101398) |
| Jean-Luc Autran, Daniela Munteanu, Soilihi Moindjie, Tarek Saad Saoud, Sébastien Sauze, Gilles Gasiot, Philippe Roche, ASTEP (2005-2015): Ten Years of Soft Error and Atmospheric Radiation Characterizations on the Plateau de Bure, ESREF Conference, 2015 () (hal-02101357) |
| Daniela Munteanu, Jean-Luc Autran, 3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET, ESREF Conference, 2015 () (hal-02100246) |
| Daniela Munteanu, Jean-Luc Autran, SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation, ESREF Conference, 2015 () (hal-02100273) |
| Daniela Munteanu, Jean-Luc Autran, 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs, Microelectronics Reliability, 2015, 55, pp.1522-1526 (10.1016/j.microrel.2015.07.022) (hal-01430073) |
| Jean-Luc Autran, Daniela Munteanu, S. Moindjie, T. Saad Saoud, S. Sauze, G. Gasiot, P. Roche, ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure, Microelectronics Reliability, 2015, 55, pp.1506-1511 (10.1016/j.microrel.2015.06.101) (hal-01430074) |
| Jean-Luc Autran, Daniela Munteanu, Radiation and COTS at ground level, Microelectronics Reliability, 2015, 55, pp.2147-2153 (10.1016/j.microrel.2015.06.030) (hal-01430071) |
| D. Cristea, A. Crisan, N. Cretu, J. Borges, C. Lopes, L. Cunha, V. Ion, M. Dinescu, N. P. Barradas, E. Alves, M. Apreutesei, Daniela Munteanu, Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering, Applied Surface Science, 2015, 354, pp.298-305 (10.1016/j.apsusc.2015.06.167) (hal-01814295) |
| D. Cristea, M. Pətru, A. Crisan, Daniela Munteanu, D. Crəciun, N.P. Barradas, E. Alves, M. Apreutesei, C. Moura, L. Cunha, Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters, Applied Surface Science, 2015, 358, pp.508-517 (10.1016/j.apsusc.2015.09.022) (hal-01804737) |
| Daniela Munteanu, Jean-Luc Autran, SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation, Microelectronics Reliability, 2015, 55, pp.1501 - 1505 (10.1016/j.microrel.2015.06.107) (hal-01429427) |
| M. Glorieux, Jean-Luc Autran, Daniela Munteanu, S. Clerc, G. Gasiot, P. Roche, Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits, IEEE Transactions on Nuclear Science, 2014, 61, pp.3527-3534 (10.1109/TNS.2014.2362073) (hal-01430079) |
| Tarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, Frédéric Saigné, Philippe Cocquerez, Luigi Dilillo, Maximilien Glorieux, Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation, IEEE Transactions on Nuclear Science, 2014, 61, pp.3380-3388 (10.1109/TNS.2014.2365038) (lirmm-01234455) |
| Daniela Munteanu, Jean-Luc Autran, Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation, Microelectronics Reliability, 2014, 54, pp.2284-2288 (10.1016/j.microrel.2014.07.079) (hal-01430078) |
| Jean-Luc Autran, M. Glorieux, Daniela Munteanu, S. Clerc, G. Gasiot, P. Roche, Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits, Microelectronics Reliability, 2014, 54, pp.2278-2283 (10.1016/j.microrel.2014.07.088) (hal-01430080) |
| Jean-Luc Autran, Daniela Munteanu, P. Roche, G. Gasiot, Real-time soft-error rate measurements: A review, Microelectronics Reliability, 2014, 54, pp.1455-1476 (10.1016/j.microrel.2014.02.031) (hal-01430077) |
| P. Roche, G. Gasiot, Jean-Luc Autran, Daniela Munteanu, R. A. Reed, R. A. Weller, Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation, IEEE Transactions on Nuclear Science, 2014, 61, pp.1498-1500 (10.1109/TNS.2014.2318778) (hal-01430075) |
| S. Martinie, T. Saad-Saoud, S. Moindjie, Daniela Munteanu, Jean-Luc Autran, Behavioral modeling of SRIM tables for numerical simulation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 322, pp.2-6 (10.1016/j.nimb.2013.12.023) (hal-01430076) |
| Tarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, Frédéric Saigné, Philippe Cocquerez, Luigi Dilillo, Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation, NSREC: Nuclear and Space Radiation Effects Conference, 2014 () (lirmm-01237717) |
| D. Cristea, A. Crisan, Daniela Munteanu, M. Apreutesei, M.F. Costa, L. Cunha, Tantalum oxynitride thin films: Mechanical properties and wear behavior dependence on growth conditions, Surface and Coatings Technology, 2014, 258, pp.587-596 (10.1016/j.surfcoat.2014.08.031) (hal-01808061) |
| R. Coquand, S. Barraud, M. Casse, P. Leroux, C. Vizioz, C. Comboroure, P. Perreau, E. Ernst, M. P. Samson, V. Maffini-Alvaro, C. Tabone, S. Barnola, Daniela Munteanu, Gérard Ghibaudo, S. Monfray, F. Boeuf, T. Poiroux, Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width, Solid-State Electronics, 2013, 88, pp.32-36 (10.1016/j.sse.2013.04.006) (hal-01002171) |
| Philippe Roche, Jean-Luc Autran, Gilles Gasiot, Daniela Munteanu, Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue, 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013 (10.1109/IEDM.2013.6724728) (hal-01430081) |
| G. Just, Jean-Luc Autran, S. Serre, Daniela Munteanu, S. Sauze, A. Regnier, J. L. Ogier, P. Roche, G. Gasiot, Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories, 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013 (10.1109/IRPS.2013.6531992) (hal-01430082) |
| Jean-Luc Autran, S. Serre, S. Semikh, Daniela Munteanu, G. Gasiot, P. Roche, Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs, IEEE Transactions on Nuclear Science, 2012, 59, pp.2658-2665 (10.1109/TNS.2012.2222438) (hal-01430089) |
| Daniela Munteanu, Jean-Luc Autran, Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation, IEEE Transactions on Nuclear Science, 2012, 59, pp.3249-3257 (10.1109/TNS.2012.2221740) (hal-01430090) |
| Daniela Munteanu, Jean-Luc Autran, 3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation, IEEE Transactions on Nuclear Science, 2012, 59, pp.773-780 (10.1109/TNS.2012.2184139) (hal-01430092) |
| S. Serre, S. Semikh, S. Uznanski, Jean-Luc Autran, Daniela Munteanu, G. Gasiot, P. Roche, Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate, IEEE Transactions on Nuclear Science, 2012, 59, pp.714-722 (10.1109/TNS.2012.2189018) (hal-01430091) |
| Sébastien Martinie, Jean-Luc Autran, Sebastien Sauze, Daniela Munteanu, Slawosz Uznanski, Philippe Roche, Gilles Gasiot, Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM, IEEE Transactions on Nuclear Science, 2012, 59, pp.1048-1053 (10.1109/TNS.2012.2189246) (hal-01430088) |
| J. Dura, F. Triozon, S. Barraud, Daniela Munteanu, S. Martinie, Jean-Luc Autran, Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment, Journal of Applied Physics, 2012, 111 (10.1063/1.4719081) (hal-01430085) |
| S. Semikh, S. Serre, Jean-Luc Autran, Daniela Munteanu, S. Sauze, E. Yakushev, S. Rozov, The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation, IEEE Transactions on Nuclear Science, 2012, 59, pp.303-313 (10.1109/TNS.2011.2179945) (hal-01430083) |
| J. Dura, F. Triozon, Daniela Munteanu, S. Barraud, S. Martinie, Jean-Luc Autran, Electronic transport in GAA silicon nanowire MOSFETs: from Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient, 2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012 () (hal-01430084) |
| Jean-Luc Autran, S. Serre, Daniela Munteanu, S. Martinie, S. Semikh, S. Sauze, S. Uznanski, G. Gasiot, P. Roche, Real-Time Soft-Error Testing of 40nm SRAMs, 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012 (10.1109/IRPS.2012.6241814) (hal-01430086) |
| Jean-Luc Autran, Daniela Munteanu, S. Serre, S. Sauze, A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits, 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012 (10.1109/IRPS.2012.6241843) (hal-01430087) |
| Sébastien Martinie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, Michael Gedion, Frédéric Saigné, Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level, IEEE Transactions on Nuclear Science, 2011, 58, pp.2798-2803 (10.1109/TNS.2011.2170851) (hal-01430100) |
| S. Martinie, Jean-Luc Autran, S. Uznanski, P. Roche, G. Gasiot, Daniela Munteanu, S. Sauze, Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM, IEEE Transactions on Nuclear Science, 2011, 58, pp.1086-1092 (10.1109/TNS.2010.2102363) (hal-01430099) |
| Daniela Di Martino, Daniela Munteanu, Alberto Paleari, Anna Vedda, SiO2, Advanced Dielectrics and Related Devices Varenna, Italy Preface, Journal of Non-Crystalline Solids, 2011, 357, pp.1835 (10.1016/j.jnoncrysol.2011.02.001) (hal-01430101) |
| Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel, Journal of Non-Crystalline Solids, 2011, 357, pp.1879-1883 (10.1016/j.jnoncrysol.2010.12.046) (hal-01430098) |
| Daniela Munteanu, Jean-Luc Autran, Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications, Journal of Non-Crystalline Solids, 2011, 357, pp.1884-1887 (10.1016/j.jnoncrysol.2010.11.112) (hal-01430095) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials, Microelectronic Engineering, 2011, 88, pp.366-369 (10.1016/j.mee.2010.08.026) (hal-01430097) |
| Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, Quantum Compact Model of Drain Current in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2011, 50 (10.1143/JJAP.50.024301) (hal-01430093) |
| Sébastien Martinie, Daniela Munteanu, Gilles Le Carval, Julien Dura, Marie-Anne Jaud, Sylvain Barraud, Jean-Luc Autran, Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal-Oxide-Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices, Japanese Journal of Applied Physics, 2011, 50 (10.1143/JJAP.50.014103) (hal-01430094) |
| Jean-Luc Autran, Daniela Munteanu, P. Roche, G. Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, E. Yakushev, S. Rozov, P. Loaiza, Guillaume Warot, M. Zampaolo, Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level, Microelectronics Reliability, 2010, 50, pp.1822-1831 (10.1016/j.microrel.2010.07.033) (hal-01430102) |
| Sébastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran, Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation, IEEE Transactions on Electron Devices, 2009, 56, pp.2692-2702 (10.1109/TED.2009.2030540) (hal-01430108) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-kappa Dielectric Stack Using the Non-equilibrium Green's Function Formalism, Japanese Journal of Applied Physics, 2009, 48 (10.1143/JJAP.48.111409) (hal-01430110) |
| Daniela Munteanu, Jean-Luc Autran, 3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates, IEEE Transactions on Nuclear Science, 2009, 56, pp.2083-2090 (10.1109/TNS.2009.2016343) (hal-01430111) |
| Daniela Munteanu, Jean-Luc Autran, Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study, IEEE Transactions on Nuclear Science, 2009, 56, pp.2042-2049 (10.1109/TNS.2009.2016564) (hal-01430109) |
| Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, P. Loaiza, M. Zampaolo, J. Borel, Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM, IEEE Transactions on Nuclear Science, 2009, 56, pp.2258-2266 (10.1109/TNS.2009.2012426) (hal-01430112) |
| Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, M. Houssa, Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study, Journal of Non-Crystalline Solids, 2009, 355, pp.1180-1184 (10.1016/j.jnoncrysol.2009.03.006) (hal-01430113) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, F. Bellenger, J. Mitard, M. Houssa, Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices, Journal of Non-Crystalline Solids, 2009, 355, pp.1171-1175 (10.1016/j.jnoncrysol.2009.01.056) (hal-01430114) |
| X. Loussier, Daniela Munteanu, Jean-Luc Autran, Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics, Journal of Non-Crystalline Solids, 2009, 355, pp.1185-1188 (10.1016/j.jnoncrysol.2009.02.011) (hal-01430115) |
| Sebastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran, Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects, Molecular Simulation, 2009, 35, pp.631-637 (10.1080/08927020902769836) (hal-00515076) |
| Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs, Molecular Simulation, 2009, 35, pp.491-497 (10.1080/08927020902801548) (hal-00515080) |
| Vincent Barral, Thierry Poiroux, Sylvain Barraud, François Andrieu, Olivier Faynot, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus, Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices, IEEE Transactions on Nanotechnology, 2009, 8, pp.167-173 (10.1109/TNANO.2008.2010128) (hal-01430103) |
| Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus, Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology, IEEE Transactions on Electron Devices, 2009, 56, pp.408-419 (10.1109/TED.2008.2011681) (hal-01430106) |
| Vincent Barral, Thierry Poiroux, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus, Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility, IEEE Transactions on Electron Devices, 2009, 56, pp.420-430 (10.1109/TED.2008.2011682) (hal-01430104) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Florence Bellenger, Jérome Mitard, Michel Houssa, Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices, MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02 (10.1557/PROC-1194-A02-02) (hal-01745840) |
| Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, P. Loaiza, M. Zampaolo, J. Borel, S. Rozov, E. Yakushev, Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform, 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, pp.113-120 (10.1109/ICICDT.2009.5166277) (hal-01430105) |
| S. Martinie, E. Sarrazin, Daniela Munteanu, S. Barraud, G. Le Carval, Jean-Luc Autran, Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis, 2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, pp.139-142 (10.1109/SISPAD.2009.5290229) (hal-01430107) |
| Sebastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran, New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport, IEEE Electron Device Letters, 2008, 29, pp.1392-1394 (10.1109/LED.2008.2007305) (hal-01759431) |
| Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, 3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates, Conference on Radiation Effects on Components and Systems (RADECS), 2008, pp.280-283 (10.1109/RADECS.2008.5782727) (hal-01841105) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2008, 47, pp.7013 - 7018 (10.1143/JJAP.47.7013) (hal-01745615) |
| Sebastien Martinie, Gilles Le Carval, Daniela Munteanu, S. Soliveres, Jean-Luc Autran, Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits, IEEE Transactions on Electron Devices, 2008, 55, pp.2443-2453 (10.1109/TED.2008.927656) (hal-01759435) |
| Sébastien Martinie, Sylvain Vedraine, Daniela Munteanu, Gilles Le Carval, Vincent Barral, Jean-Luc Autran, Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances, 38th European Solid State Device Research Conference (ESSDERC’2008), 2008 () (hal-01245391) |
| Daniela Munteanu, Jean-Luc Autran, Modeling and Simulation of Single-Event Effects in Digital Devices and ICs, IEEE Transactions on Nuclear Science, 2008, 55, pp.1854-1878 (10.1109/TNS.2008.2000957) (hal-01759437) |
| Jean-Luc Autran, Daniela Munteanu, Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach, Journal of computational and theoretical nanoscience, 2008, 5, pp.1120-1127 () (hal-01759436) |
| Xavier Loussier, Daniela Munteanu, Jean-Luc Autran, Olivier Tintori, Impact of Geometrical and Electrical Parameters on Speed Performance Characteristics in Ultimate Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2008, 47, pp.3390-3395 (10.1143/JJAP.47.3390) (hal-01759434) |
| Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, P. Loaiza, M. Zampaolo, J. Borel, Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements, 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, pp.233+ (10.1109/ICICDT.2008.4567284) (hal-01759432) |
| Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs, NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, pp.877+ () (hal-01759433) |
| S. Martinie, Daniela Munteanu, G. Le Carval, Jean-Luc Autran, A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture, SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, pp.377+ (10.1109/SISPAD.2008.4648316) (hal-01759430) |
| Jean-Marie Chappe, C.A. Fernandes, L. Cunha, C. Moura, F. Vaz, Nicolas Martin, Daniela Munteanu, D. Borcea, TiN-based decorative coatings: colour change by addition of C and O, Journal of Optoelectronics and Advanced Materials, 2008, 10, pp.900-903 () (hal-00319283) |
| Vincent Barral, T. Poiroux, S. Barraud, O. Bonno, F. Andrieu, C. Buj-Dufournet, L. Brevard, D. Lafond, O. Faynot, Daniela Munteanu, Jean-Luc Autran, S. Deleonibus, Electron Mean-Free-Path Experimental Extraction on Ultra-Thin and Ultra-Short Strained and Unstrained FDSOI n-MOSFETs, 2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, pp.7-8 (10.1109/SNW.2008.5418445) (hal-01759427) |
| S. Martinie, G. Le Carval, Daniela Munteanu, M-A Jaud, Jean-Luc Autran, A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performance, 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, pp.273+ (10.1109/ICICDT.2008.4567294) (hal-01759429) |
| J.M. Chappe, A.C. Fernandes, L. Cunha, C. Moura, F. Vaz, Nicolas Martin, Daniela Munteanu, B. Borcea, TiN-based decorative coatings : colour change by addition of C and O, The 5th International Conference on New Research Trends in Materials Science – ARM 5, 2007 () (hal-00346455) |
| Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, K. Coulié, 3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs, IEEE Transactions on Nuclear Science, 2007, 54, pp.994-1001 (10.1109/TNS.2007.892284) (hal-01759444) |
| Jean-Luc Autran, Philippe Roche, Joseph Borel, Christophe Sudre, K. Coulié, Daniela Munteanu, Thierry Parrassin, Gilles Gasiot, Jean-Pierre Schoelikopf, Altitude SEE test European platform (ASTEP) and first results in CMOS 130 nm SRAM, IEEE Transactions on Nuclear Science, 2007, 54, pp.1002-1009 (10.1109/TNS.2007.891398) (hal-01759445) |
| Simonpietro Agnello, Roberto Boscaino, Daniela Munteanu, SiO2, advanced dielectrics and related devices - Proceedings of the 6th Franco-Italian Symposium on SiO2, advanced dielectrics and related devices - Mondello, Palermo, Italy - June 25-28, 2006 - Preface, Journal of Non-Crystalline Solids, 2007, 353, pp.VII (10.1016/j.jnoncrysol.2007.01.002) (hal-01759442) |
| Vincent Barral, T. Poiroux, Maud Vinet, J. Widiez, B. Previtali, P. Grosgeorges, G. Le Carval, S. Barraud, Jean-Luc Autran, Daniela Munteanu, S. Deleonibus, Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors, Solid-State Electronics, 2007, 51, pp.537-542 (10.1016/j.sse.2007.02.016) (hal-01759440) |
| X. Loussier, Daniela Munteanu, Jean-Luc Autran, Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits, Journal of Non-Crystalline Solids, 2007, 353, pp.639-644 (10.1016/j.jnoncrysol.2006.11.016) (hal-01759443) |
| Vincent Barral, T. Poiroux, F. Andrieu, C. Buj-Dufournet, O. Faynot, T. Ernst, L. Brevard, C. Fenouillet-Beranger, D. Lafond, J. M. Hartmann, V. Vidal, F. Allain, N. Daval, I. Cayrefourcq, L. Tosti, Daniela Munteanu, Jean-Luc Autran, S. Deleonibus, Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack, 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, pp.61+ (10.1109/IEDM.2007.4418863) (hal-01759439) |
| Vincent Barral, T. Poiroux, F. Rochette, Maud Vinet, S. Barraud, O. Faynot, L. Tosti, F. Andrieu, M. Casse, B. Previtali, R. Ritzenthaler, P. Grosgeorges, E. Bernard, G. Lecarval, Daniela Munteanu, Jean-Luc Autran, S. Deleonibus, Will strain be useful for 10 nm quasi-ballistic FDSOI devices? An experimental study, 2007 Symposium on VLSI Technology, Digest of Technical Papers, 2007, pp.128+ (10.1109/VLSIT.2007.4339754) (hal-01759441) |
| Daniela Munteanu, Jean-Luc Autran, Xavier Loussier, Samuel Harrison, Robin Cerutti, Compact Modeling of Symmetrical Double-Gate MOSFETs Including Carrier Confinement and Short-Channel Effects, Molecular Simulation, 2007, 33, pp.605-611 (10.1080/08927020600930524) (hal-00526208) |
| Daniela Munteanu, V. Ferlet-Cavrois, Jean-Luc Autran, P. Paillet, J. Baggio, O. Faynot, C. Jahan, L. Tosti, Investigation of quantum effects in ultra-thin body single- and double-gate devices submitted to heavy ion irradiation, IEEE Transactions on Nuclear Science, 2006, 53, pp.3363-3371 (10.1109/TNS.2006.886206) (hal-01759448) |
| K. Coulié, Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, Investigation of 30 nm gate-all-around MOSFET sensitivity to heavy ions: A 3-D simulation study, IEEE Transactions on Nuclear Science, 2006, 53, pp.1950-1958 (10.1109/TNS.2006.880945) (hal-01759447) |
| Daniela Munteanu, Jean-Luc Autran, Xavier Loussier, Samuel Harrison, Robin Cerutti, Thomas Skotnicki, Quantum short-channel compact modelling of drain-current in double-gate MOSFET, Solid-State Electronics, 2006, 50, pp.680-686 (10.1016/j.sse.2006.03.038) (hal-01759446) |
| K. Nehari, N. Cavassilas, Jean-Luc Autran, M. Bescond, Daniela Munteanu, M. Lannoo, Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study, Solid-State Electronics, 2006, 50, pp.716-721 (10.1016/j.sse.2006.03.041) (hal-02132134) |
| K. Castellani-Couli, Daniela Munteanu, Jean-Luc Autran, Veronique Ferlet-Cavrois, P. Paillet, J. Baggio, Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation, IEEE Transactions on Nuclear Science, 2006, 53, pp.3265-3270 () (hal-02025180) |
| Daniela Munteanu, Influence of band-structure on electron ballistic transport in Silicon nanowire MOSFET's: an atomistic study, Solid-State Electronics, 2006, 50, pp.716 () (hal-00145446) |
| Jean-Luc Autran, Daniela Munteanu, M Houssa, K. Coulié, A Said, Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectrics, Japanese Journal of Applied Physics, 2005, 44, pp.8362-8366 (10.1143/JJAP.44.8362) (hal-01759458) |
| K. Coulié, Daniela Munteanu, Jean-Luc Autran, V Ferlet-Cavrols, P Paillet, J Baggio, Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs, IEEE Transactions on Nuclear Science, 2005, 52, pp.2137-2143 (10.1109/TNS.2005.860680) (hal-01759456) |
| Jean-Luc Autran, Karim Nehari, Daniela Munteanu, Compact Modeling of the Threshold Voltage in Silicon Nanowire MOSFET including 2D-Quantum Confinement Effects, Molecular Simulation, 2005, 31, pp.839-843 (10.1080/08927020500314027) (hal-00514965) |
| K. Coulié, Daniela Munteanu, V Ferlet-Cavrois, Jean-Luc Autran, Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations, IEEE Transactions on Nuclear Science, 2005, 52, pp.1474-1479 (10.1109/TNS.2005.855810) (hal-01759457) |
| Daniela Munteanu, Jean-Luc Autran, S Harrison, K Nehari, O Tintori, T Skotnicki, Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET, Molecular Simulation, 2005, 31, pp.831-837 (10.1080/08927020500313995) (hal-01759460) |
| K. Coulié, M. Xia, Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, Influence of Simulation Parameters on the Bipolar Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations, 2005 8th European Conference on Radiation and Its Effects on Components and Systems, 2005, pp.G2-1-G2-6 () (hal-02025578) |
| K. Coulié, Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study, 2005 8th European Conference on Radiation and Its Effects on Components and Systems, 2005, pp.G1-1-G1-8 () (hal-02025580) |
| A Vedda, Daniela Munteanu, M Ferrari, P Paillet, Jean-Luc Autran, SiO2, advanced dielectrics and related devices 5 - Proceedings of the 5th Franco-Italian Symposium on SiO2, Advanced Dielectrics and Related Devices - Preface, Journal of Non-Crystalline Solids, 2005, 351, pp.VII (10.1016/j.jnocrysol.2005.04.067) (hal-01759452) |
| Jean-Luc Autran, Daniela Munteanu, M Bescond, M Houssa, A Said, A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-kappa gate dielectrics, Journal of Non-Crystalline Solids, 2005, 351, pp.1897-1901 (10.1016/j.jnoncrysol.2005.04.034) (hal-01759455) |
| Daniela Munteanu, Jean-Luc Autran, S Harrison, Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectrics, Journal of Non-Crystalline Solids, 2005, 351, pp.1911-1918 (10.1016/j.jnoncrysol.2005.04.037) (hal-01759450) |
| Jean-Luc Autran, Daniela Munteanu, O Tintori, E Decarre, Am Ionescu, An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors, Molecular Simulation, 2005, 31, pp.179-183 (10.1080/0892702051233132) (hal-01759451) |
| Daniela Munteanu, A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-Κ dielectrics, Journal of Non-Crystalline Solids, 2005, Vol.351, pp.1897 () (hal-00145186) |
| Daniela Munteanu, Jean-Luc Autran, X Loussier, S Harrison, R Cerutti, T Skotnicki, Quantum short-channel compact modeling of drain-current in double-gate MOSFET, PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, pp.137-140 (10.1109/ESSDER.2005.1546604) (hal-01759453) |
| Marc Bescond, Jean-Luc Autran, Nicolas Cavassilas, Daniela Munteanu, Michel Lannoo, Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green's Function Formalism, Journal of Computational Electronics, 2004, 3, pp.393-396 (10.1007/s10825-004-7083-4) (hal-01759465) |
| M Bescond, Jean-Luc Autran, Daniela Munteanu, M Lannoo, Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism, Solid-State Electronics, 2004, 48, pp.567-574 (10.1016/j.sse.2003.09.025) (hal-01759467) |
| Am Ionescu, Daniela Munteanu, N Hefyene, C Anghel, Compact modeling of weak inversion generation transients in SOI MOSFETs, Journal of The Electrochemical Society, 2004, 151, pp.G396-G401 (10.1149/1.1705662) (hal-01759461) |
| M Bescond, K Nehari, Jean-Luc Autran, N Cavassilas, Daniela Munteanu, M Lannoo, 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, pp.617-620 (10.1109/IEDM.2004.1419237) (hal-01759466) |
| Jean-Luc Autran, Daniela Munteanu, O Tintori, M Aubert, E Decarre, An analytical subthreshold current model for ballistic double-gate MOSFETs, NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, pp.171-174 () (hal-01759463) |
| S Harrison, P Coronel, A Cros, R Cerutti, F Leverd, A Beverina, R Wacquez, J Bustos, D Delille, B Tavel, D Barge, J Bienacel, M Samson, F Martin, S Maitrejean, Daniela Munteanu, Jean-Luc Autran, T Skotnicki, Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chip, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, pp.291-294 (10.1109/IEDM.2004.1419136) (hal-01759469) |
| Jean-Luc Autran, Daniela Munteanu, O Tintori, S Harrison, E Decarre, T Skotnicki, Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates, NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, pp.163-166 () (hal-01759462) |
| Jean-Luc Autran, Daniela Munteanu, M Houssa, M Bescond, X Garros, C Leroux, Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack, INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, 2004, 811, pp.177-188 () (hal-01759464) |
| S Harrison, Daniela Munteanu, Jean-Luc Autran, A Cros, R Cerutti, T Skotnicki, Electrical characterization and modelling of high-performance SON DG MOSFETs, ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, pp.373-376 (10.1109/ESSDER.2004.1356567) (hal-01759468) |
| Jean-Luc Autran, Daniela Munteanu, R Dinescu, M Houssa, Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distribution, Journal of Non-Crystalline Solids, 2003, 322, pp.219-224 (10.1016/S0022-3093(03)00205-9) (hal-01759476) |
| Daniela Munteanu, Jean-Luc Autran, E Decarre, R Dinescu, Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides, Journal of Non-Crystalline Solids, 2003, 322, pp.206-212 (10.1016/S0022-3093(03)00203-5) (hal-01759475) |
| Jean-Luc Autran, Daniela Munteanu, Tunneling component of the ballistic current in ultimate double-gate devices, Electrochemical and Solid-State Letters, 2003, 6, pp.G95-G97 (10.1149/1.1575591) (hal-01759471) |
| A Vedda, Jean-Luc Autran, M Ferrari, Daniela Munteanu, M Passacantando, SiO2 and Advanced Dielectrics 4 - Proceedings of the 4th Franco-Italian Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, September 16-18, 2002 - Preface, Journal of Non-Crystalline Solids, 2003, 322, pp.VII (10.1016/S0022-3093(03)00346-6) (hal-01759472) |
| Daniela Munteanu, Jean-Luc Autran, Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices, Solid-State Electronics, 2003, 47, pp.1219-1225 (10.1016/S0038-1101(03)00039-X) (hal-01759470) |
| M Bescond, Jean-Luc Autran, Daniela Munteanu, N Cavassilas, M Lannoo, Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier Double-Gate MOSFET's, ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, pp.395-398 (10.1109/ESSDERC.2003.1256897) (hal-01759526) |
| S Harrison, P Coronel, F Leverd, R Cerutti, R Palla, D Delille, S Borel, Sophie Jullian, R Pantel, S Descombes, D Dutartre, Y Morand, Mp Samson, D Lenoble, A Talbot, A Villaret, S Monfray, P Mazoyer, J Bustos, H Brut, A Cros, Daniela Munteanu, Jean-Luc Autran, T Skotnicki, Highly Performant Double Gate MOSFET realized with SON process, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, pp.449-452 () (hal-01759525) |
| Daniela Munteanu, G Le Carval, Assessment of anomalous behavior in hydrodynamic simulation of CMOS bulk and partially depleted SOI devices, Journal of The Electrochemical Society, 2002, 149, pp.G574-G580 (10.1149/1.1506168) (hal-01759530) |
| Daniela Munteanu, Am Ionescu, Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs, IEEE Transactions on Electron Devices, 2002, 49, pp.1198-1205 (10.1109/TED.2002.1013276) (hal-01759529) |
| P Masson, Jean-Luc Autran, Daniela Munteanu, DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects, Solid-State Electronics, 2002, 46, pp.1051-1059 (10.1016/S0038-1101(02)00041-2) (hal-01759527) |
| Daniela Munteanu, G Le Carval, G Guegan, Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology, Solid-State Electronics, 2002, 46, pp.1045-1050 (10.1016/S0038-1101(02)00040-0) (hal-01759531) |
| Daniela Munteanu, G Le Carval, C Fenouillet-Beranger, O Faynot, Investigation of nonstationary transport and quantum effects in realistic deep submicrometerr partially depleted SOI technology, Electrochemical and Solid-State Letters, 2002, 5, pp.G29 (10.1149/1.1462878) (hal-01759528) |
| A.M. Ionescu, Daniela Munteanu, A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET, IEEE Electron Device Letters, 2001, 22, pp.166-169 (10.1109/55.915601) (hal-02132540) |
| Daniela Munteanu, O. Rozeau, S. Cristoloveanu, J. Jomaah, J. Boussey, M. Wetzel, P. de La Houssaye, I. Lagnado, Characterization of Silicon-on-Sapphire Material and Devices for Radio Frequency Applications, Journal of The Electrochemical Society, 2001, 148, pp.218-224 (10.1149/1.1355693) (hal-02132552) |
| Soilihi Moindje, Daniela Munteanu, Jean-Luc Autran, Victor Malherbe, Gilles Gasiot, Philippe Roche, Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), 2023 () (hal-04177735) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Martin Dentan, Philippe Moreau, Francis-Pierre Pellissier, Benjamin Santraine, Jérôme Bucalossi, Victor Malherbe, Thomas Thery, Gilles Gasiot, Philippe Roche, Matteo Cecchetto, Rubén García Alía, Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak, European Workshop on Radiation and its Effects on Components and Systems (RADECS 2023), 2023 () (hal-04139407) |
| Daniela Munteanu, Jean-Luc Autran, Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation, Electronics, 2023, 12, pp.4468 (10.3390/electronics12214468) (hal-04265835) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Victor Malherbe, Gilles Gasiot, Philippe Roche, Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs, Microelectronics Reliability, 2023, pp.115181 (10.1016/j.microrel.2023.115181) (hal-04194288) |
| Jean-Luc Autran, Daniela Munteanu, New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices, Journal of Applied Physics, 2023, 134, pp.175701 (10.1063/5.0156698) (hal-04241142) |
| Jean-Luc Autran, Daniela Munteanu, Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits, IEEE Transactions on Nuclear Science, 2023, 70, pp.782-791 (10.1109/TNS.2023.3263106) (hal-04059844) |
| Martin Dentan, Gianluca Borgese, Jean-Luc Autran, Daniela Munteanu, Soilihi Moindjie, Philippe Moreau, Francis-Pierre Pellissier, Benjamin Santraine, Jérôme Bucalossi, Philippe Roche, Victor Malherbe, Matteo Cecchetto, García Alía Rubén, Preliminary Study of Electronics Reliability in ITER Neutron Environment, European Workshop on Radiation and its Effects on Components and Systems (RADECS 2022), 2022 () (hal-03735989) |
| Jean-Luc Autran, Daniela Munteanu, Multi-scale, multi-physics modeling and simulation of single-event effects at device and circuit levels, IEEE Nuclear and Space Radiation Effects Conference (NSREC 2022), 2022 () (hal-03796081) |
| Victor Malherbe, Francois Roy, Olivier Nier, Thomas Dalleau, Serge de Paoli, Philippe Roche, Jean-Luc Autran, Martin Dentan, Guo-Neng Lu, Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons, IEEE Transactions on Nuclear Science, 2022, 69, pp.534-541 (10.1109/TNS.2022.3148925) (hal-04138209) |
| Jean-Luc Autran, Soilihi Moindjie, Daniela Munteanu, Martin Dentan, Philippe Moreau, Francis-Pierre P Pellissier, Jérôme Bucalossi, Gianluca Borgese, Victor Malherbe, Thomas Thery, Gilles Gasiot, Philipe Roche, Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak during D-D Plasma Operation, IEEE Transactions on Nuclear Science, 2022, 69, pp.1-1 (10.1109/TNS.2022.3149160) (hal-03575419) |
| Jean-Luc Autran, Daniela Munteanu, Electronics reliability of future power fusion machines: numerical investigations at silicon level, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), 2021 () (hal-03358419) |
| Daniela Munteanu, Jean-Luc Autran, Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), 2021 () (hal-03358407) |
| Soilihi Moindjie, Daniela Munteanu, M. Dentan, P. Moreau, F. P. Pellissier, J. Bucalossi, G. Borgese, V. Malherbe, T. Thery, G. Gasiot, P. Roche, Jean-Luc Autran, Real-Time Characterization of Neutron-induced SEUs in Fusion Experiment at WEST Tokamak during D-D Plasma Operation, IEEE Nuclear and Space Radiation Effects Conference (NSREC 2021), 2021 () (hal-03359535) |
| S. Guagliardo, Frédéric Wrobel, Y.Q. Aguiar, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine Touboul, Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge, Microelectronics Reliability, 2021, 119 (10.1016/j.microrel.2021.114087) (hal-03187849) |
| Jean-Luc Autran, Daniela Munteanu, Electronics reliability assessment of future power fusion machines: neutron interaction analysis in bulk silicon, Microelectronics Reliability, 2021 (10.1016/j.microrel.2021.114223) (hal-03358441) |
| Daniela Munteanu, Soilihi Moindjie, Jean-Luc Autran, Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons, Microelectronics Reliability, 2021 (10.1016/j.microrel.2021.114256) (hal-03358432) |
| S. Guagliardo, Frédéric Wrobel, Y.Q. Aguiar, Jean-Luc Autran, P. Leroux, Frédéric Saigné, Vincent Pouget, Antoine Touboul, Effect of Temperature on Single Event Latchup Sensitivity, International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2020 (10.1109/dtis48698.2020.9081275) (hal-03187841) |
| Y.Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine Touboul, Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions, Aerospace, 2020, 7, pp.12 (10.3390/aerospace7020012) (hal-03129193) |
| Jean-Luc Autran, Daniela Munteanu, Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors, IEEE Transactions on Nuclear Science, 2020, 67, pp.1428-1435 (10.1109/TNS.2020.2971611) (hal-02473107) |
| Jean-Luc Autran, Daniela Munteanu, Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors, European Workshop on Radiation and its Effects on Components and Systems (RADECS 2019), 2019 () (hal-02263545) |
| Daniela Munteanu, Jean-Luc Autran, Terrestrial Neutron-Induced Single Events in GaN, 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), 2019 () (hal-02263529) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Modeling and Simulation of SEU in Bulk Si and Ge SRAM, 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), 2019 () (hal-02263530) |
| Y. Aguiar, Frédéric Wrobel, Jean-Luc Autran, P. Leroux, Frédéric Saigné, Antoine Touboul, Vincent Pouget, Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity, IEEE Transactions on Nuclear Science, 2019, pp.1-1 (10.1109/TNS.2019.2918077) (hal-02136500) |
| Daniela Munteanu, Jean-Luc Autran, Terrestrial Neutron-Induced Single Events in GaN, Microelectronics Reliability, 2019, 100-101, pp.113357 (10.1016/j.microrel.2019.06.049) (hal-02263526) |
| Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran, Modeling and Simulation of SEU in Bulk Si and Ge SRAM, Microelectronics Reliability, 2019, 100-101, pp.113390 (10.1016/j.microrel.2019.06.082) (hal-02263527) |
| Daniela Munteanu, Soilihi Moindjie, Jean-Luc Autran, A water tank muon spectrometer for the characterization of low energy atmospheric muons, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019, 933, pp.12-17 (10.1016/j.nima.2019.03.061) (hal-02087354) |
| Jean-Luc Autran, Daniela Munteanu, Effet des neutrons atmosphériques sur l'électronique SiC et GaN, Journée du Groupement des Industries Françaises Aéronautiques et Spatiales, GIFAS 2018, 2018 () (hal-02100118) |
| Y.Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Antoine Touboul, Vincent Pouget, Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions, 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), 2018 () (hal-02086379) |
| Y.Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Antoine Touboul, Vincent Pouget, Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity, IEEE RADECS2018, 2018 () (hal-02086422) |
| Y.Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, P. Leroux, Frédéric Saigné, Antoine Touboul, Vincent Pouget, Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions, Microelectronics Reliability, 2018, 88-90, pp.920-924 (10.1016/j.microrel.2018.07.018) (hal-02089778) |
| Guénolé Lallement, Fady Abouzeid, Martin Cochet, Jean-Marc Daveau, Philippe Roche, Jean-Luc Autran, A 2.7 pJ/cycle 16 MHz, 0.7 microW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI, IEEE Journal of Solid-State Circuits, 2018, 53, pp.2088-2100 (10.1109/JSSC.2018.2821167) (hal-02111060) |
| Y. Debizet, Guénolé Lallement, Fady Abouzeid, Philippe Roche, Jean-Luc Autran, Q-Learning-based Adaptive Power Management for IoT System-an-Chips with Embedded Power States, IEEE International Symposium on Circuits and Systems (ISCAS), 2018 () (hal-02111130) |
| Martin Cochet, Ben Keller, Sylvain Clerc, Fady Abouzeid, Andreia Cathelin, Jean-Luc Autran, Philippe Roche, Borivoje Nikolic, A 225 μm2 Probe Single-Point Calibration Digital Temperature Sensor Using Body-Bias Adjustment in 28 nm FD-SOI CMOS, IEEE Solid-State Circuits Letters, 2018, 1, pp.14-17 (10.1109/LSSC.2018.2797427) (hal-02111066) |
| Victor Malherbe, Gilles Gasiot, Thomas Thery, Jean-Luc Autran, Philippe Roche, Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices, IEEE Transactions on Nuclear Science, 2018, 65, pp.331-338 (10.1109/TNS.2017.2774960) (hal-02111080) |
| Jean-Luc Autran, Daniela Munteanu, Tarek Saad Saoud, Soilihi Moindjie, Characterization of atmospheric muons at sea level using a cosmic ray telescope, Nucl.Instrum.Meth.A, 2018, 903, pp.77-84 (10.1016/j.nima.2018.06.038) (hal-01846825) |
| Martin Cochet, Sylvain Clerc, Fady Abouzeid, Guénolé Lallement, Philippe Roche, Jean-Luc Autran, A 0.40 pJ/cycle 981 μm2 Voltage Scalable Digital Frequency Generator for SoC Clocking, 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC 2017), 2017 () (hal-01788358) |
| Daniela Munteanu, Jean-Luc Autran, Soilihi Moindjie, Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation, 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), 2017 () (hal-01787612) |
| Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche, Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs, 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), 2017 () (hal-01787603) |
| Guénolé Lallement, Fady Abouzeid, Martin Cochet, Jean-Marc Daveau, Philippe Roche, Jean-Luc Autran, A 2.7pJ/cycle 16MHz SoC with 4.3nW Power-Off ARM Cortex-M0+ Core in 28nm FD-SOI, ESSCIRC 2017, 2017 () (hal-01788172) |
| Daniela Munteanu, Jean-Luc Autran, S. Moindjie, Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation, Microelectronics Reliability, 2017, 76, pp.719-724 (10.1016/j.microrel.2017.07.040) (hal-01693979) |
| Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche, Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs, Microelectronics Reliability, 2017, 76, pp.53-57 (10.1016/j.microrel.2017.07.045) (hal-01693984) |
| Victor Malherbe, Gilles Gasiot, Thomas Thery, Jean-Luc Autran, Philippe Roche, Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1D Case Applied to 28 nm FD-SOI Devices, NSREC 2017, 2017 () (hal-01788174) |
| Jean-Luc Autran, Daniela Munteanu, Single Event Effects: the effects of Single particles on electronics. Space, aerospace and ground, ANNIMA 2017, 2017 () (hal-01788355) |
| Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Philippe Roche, On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study, IEEE Transactions on Nuclear Science, 2017, 64, pp.449-456 (10.1109/TNS.2016.2634604) (hal-01694468) |
| Zahi Essa, Bernard Pelletier, P Morin, P. Boulenc, A. Pakfar, C. Tavernier, F. Wacquant, C. Zechner, M. Juhel, Jean-Luc Autran, Fuccio Cristiano, Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors, Solid-State Electronics, 2016, 126, pp.163-169 (10.1016/j.sse.2016.08.002) (hal-01435138) |
| Jean-Luc Autran, Daniela Munteanu, S. Moindjie, T. Saad Saoud, G. Gasiot, P. Roche, Real-time soft error rate measurements on bulk 40nm SRAM memories: a five-year dual-site experiment, Semiconductor Science and Technology, 2016, 31 (10.1088/0268-1242/31/11/114003) (hal-01430070) |
| T. Saad Saoud, S. Moindjie, Daniela Munteanu, Jean-Luc Autran, Natural radiation events in CCD imager at ground level, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2016 () (hal-01456909) |
| Benjamin Coeffic, Victor Malherbe, Jean-Marc Daveau, Gilles Gasiot, Naviner Lirida, Jean-Luc Autran, Philippe Roche, A Layout-Based Fault Injection Methodology for SER Prediction: Implementation and Correlation with 65nm Heavy Ion Experimental Results, Proceedings of IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2016 () (hal-02288532) |
| Victor Malherbe, Gilles Gasiot, Sylvain Clerc, Fady Abouzeid, Jean-Luc Autran, Philippe Roche, Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation, 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016 () (hal-01435110) |
| Martin Cochet, Sylvain Clerc, Mehdi Naceur, Pierre Schamberger, Damien Croain, Jean-Luc Autran, Philipe Roche, A 28nm FD-SOI Standard Cell 0.6-1.2V Open-Loop Frequency Multiplier for Low Power SoC Clocking, 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, pp.1206-1209 () (hal-01434957) |
| T Saad Saoud, S Moindjie, Daniela Munteanu, Jean-Luc Autran, Natural radiation events in CCD imagers at ground level, Microelectronics Reliability, 2016, 64, pp.68 - 72 (10.1016/j.microrel.2016.07.138) (hal-01427855) |
| Jean-Luc Autran, Daniela Munteanu, Atmospheric radiation and COTS at ground level, ESREF Conference, 2015 () (hal-02101398) |
| Jean-Luc Autran, Daniela Munteanu, Soilihi Moindjie, Tarek Saad Saoud, Sébastien Sauze, Gilles Gasiot, Philippe Roche, ASTEP (2005-2015): Ten Years of Soft Error and Atmospheric Radiation Characterizations on the Plateau de Bure, ESREF Conference, 2015 () (hal-02101357) |
| Daniela Munteanu, Jean-Luc Autran, 3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET, ESREF Conference, 2015 () (hal-02100246) |
| Daniela Munteanu, Jean-Luc Autran, SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation, ESREF Conference, 2015 () (hal-02100273) |
| Daniela Munteanu, Jean-Luc Autran, 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs, Microelectronics Reliability, 2015, 55, pp.1522-1526 (10.1016/j.microrel.2015.07.022) (hal-01430073) |
| Jean-Luc Autran, Daniela Munteanu, S. Moindjie, T. Saad Saoud, S. Sauze, G. Gasiot, P. Roche, ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure, Microelectronics Reliability, 2015, 55, pp.1506-1511 (10.1016/j.microrel.2015.06.101) (hal-01430074) |
| Jean-Luc Autran, Daniela Munteanu, Radiation and COTS at ground level, Microelectronics Reliability, 2015, 55, pp.2147-2153 (10.1016/j.microrel.2015.06.030) (hal-01430071) |
| Daniela Munteanu, Jean-Luc Autran, SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation, Microelectronics Reliability, 2015, 55, pp.1501 - 1505 (10.1016/j.microrel.2015.06.107) (hal-01429427) |
| Frédéric Wrobel, A. Kaouache, Frédéric Saigné, Antoine Touboul, R. D. Schrimpf, Jean-Luc Autran, Olivier Bruguier, Investigation of Alpha Emissivity as a Function of Time, 51th IEEE Nuclear Space and Radiation Effects Conference, 2015 () (hal-01824780) |
| M. Glorieux, Jean-Luc Autran, Daniela Munteanu, S. Clerc, G. Gasiot, P. Roche, Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits, IEEE Transactions on Nuclear Science, 2014, 61, pp.3527-3534 (10.1109/TNS.2014.2362073) (hal-01430079) |
| Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Philippe Cocquerez, Jean-Luc Autran, Antonio Litterio, Frédéric Wrobel, Frédéric Saigné, 90 nm SRAM Static and Dynamic Mode Real-Time Testing at Concordia Station in Antarctica, IEEE Transactions on Nuclear Science, 2014, 61, pp.3389-3394 (10.1109/TNS.2014.2363120) (hal-04056468) |
| Tarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, Frédéric Saigné, Philippe Cocquerez, Luigi Dilillo, Maximilien Glorieux, Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation, IEEE Transactions on Nuclear Science, 2014, 61, pp.3380-3388 (10.1109/TNS.2014.2365038) (lirmm-01234455) |
| Jean-Luc Autran, M. Glorieux, Daniela Munteanu, S. Clerc, G. Gasiot, P. Roche, Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits, Microelectronics Reliability, 2014, 54, pp.2278-2283 (10.1016/j.microrel.2014.07.088) (hal-01430080) |
| Daniela Munteanu, Jean-Luc Autran, Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation, Microelectronics Reliability, 2014, 54, pp.2284-2288 (10.1016/j.microrel.2014.07.079) (hal-01430078) |
| Jean-Luc Autran, Daniela Munteanu, P. Roche, G. Gasiot, Real-time soft-error rate measurements: A review, Microelectronics Reliability, 2014, 54, pp.1455-1476 (10.1016/j.microrel.2014.02.031) (hal-01430077) |
| P. Roche, G. Gasiot, Jean-Luc Autran, Daniela Munteanu, R. A. Reed, R. A. Weller, Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation, IEEE Transactions on Nuclear Science, 2014, 61, pp.1498-1500 (10.1109/TNS.2014.2318778) (hal-01430075) |
| A. Kaouache, Frédéric Wrobel, Frédéric Saigné, Antoine Touboul, R. D. Schrimpf, Jean-Luc Autran, An Analytical Model to Quantify Decay Chain Disequilibrium–Application to the Thorium Decay Chain, IEEE Transactions on Nuclear Science, 2014, 61, pp.1414 - 1419 (10.1109/TNS.2014.2318074) (hal-01635042) |
| S. Martinie, T. Saad-Saoud, S. Moindjie, Daniela Munteanu, Jean-Luc Autran, Behavioral modeling of SRIM tables for numerical simulation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 322, pp.2-6 (10.1016/j.nimb.2013.12.023) (hal-01430076) |
| Tarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, Frédéric Saigné, Philippe Cocquerez, Luigi Dilillo, Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation, NSREC: Nuclear and Space Radiation Effects Conference, 2014 () (lirmm-01237717) |
| Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Aida Todri-Sanial, Arnaud Virazel, Philippe Cocquerez, Jean-Luc Autran, Antonio Litterio, Frédéric Wrobel, Frédéric Saigné, Real-Time Testing of 90nm COTS SRAMs at Concordia Station in Antarctica, NSREC: Nuclear and Space Radiation Effects Conference, 2014 () (lirmm-01237709) |
| Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Jean-Marc J.-M. Galliere, Jean-Luc Autran, Philippe Cocquerez, Pierre Chadoutaud, Frédéric Saigné, A Silicon Diode-Based Detector for Investigations of Atmospheric Radiation, IEEE Transactions on Nuclear Science, 2013, 60, pp.3603-3608 (10.1109/TNS.2013.2264957) (lirmm-01234419) |
| Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Jean-Marc J.-M. Galliere, Antoine Touboul, Pierre Chadoutaud, Philippe Cocquerez, Michel Lacourty, Marie-Anne Claire, Jean-Luc Autran, Christian Chatry, Florent Laplanche, Bruno Azais, Frédéric Saigné, Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling, IEEE Transactions on Nuclear Science, 2013, 60, pp.2386-2391 (10.1109/TNS.2013.2257847) (lirmm-01234425) |
| Philippe Roche, Jean-Luc Autran, Gilles Gasiot, Daniela Munteanu, Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue, 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013 (10.1109/IEDM.2013.6724728) (hal-01430081) |
| G. Just, Jean-Luc Autran, S. Serre, Daniela Munteanu, S. Sauze, A. Regnier, J. L. Ogier, P. Roche, G. Gasiot, Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories, 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013 (10.1109/IRPS.2013.6531992) (hal-01430082) |
| Jean-Luc Autran, S. Serre, S. Semikh, Daniela Munteanu, G. Gasiot, P. Roche, Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs, IEEE Transactions on Nuclear Science, 2012, 59, pp.2658-2665 (10.1109/TNS.2012.2222438) (hal-01430089) |
| Daniela Munteanu, Jean-Luc Autran, Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation, IEEE Transactions on Nuclear Science, 2012, 59, pp.3249-3257 (10.1109/TNS.2012.2221740) (hal-01430090) |
| Daniela Munteanu, Jean-Luc Autran, 3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation, IEEE Transactions on Nuclear Science, 2012, 59, pp.773-780 (10.1109/TNS.2012.2184139) (hal-01430092) |
| S. Serre, S. Semikh, S. Uznanski, Jean-Luc Autran, Daniela Munteanu, G. Gasiot, P. Roche, Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate, IEEE Transactions on Nuclear Science, 2012, 59, pp.714-722 (10.1109/TNS.2012.2189018) (hal-01430091) |
| Sébastien Martinie, Jean-Luc Autran, Sebastien Sauze, Daniela Munteanu, Slawosz Uznanski, Philippe Roche, Gilles Gasiot, Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM, IEEE Transactions on Nuclear Science, 2012, 59, pp.1048-1053 (10.1109/TNS.2012.2189246) (hal-01430088) |
| Denis Pantel, Jean-Roch Vaillé, Frédéric Wrobel, Luigi Dilillo, Jean-Marc J.-M. Galliere, Jean-Luc Autran, Philippe Cocquerez, Pierre Chadoutaud, Frédéric Saigné, Embedded silicon detector to investigate the natural radiative environment, Journal of Instrumentation, 2012, 7, pp.1-11 (10.1088/1748-0221/7/05/P05007) (lirmm-00805011) |
| J. Dura, F. Triozon, S. Barraud, Daniela Munteanu, S. Martinie, Jean-Luc Autran, Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment, Journal of Applied Physics, 2012, 111 (10.1063/1.4719081) (hal-01430085) |
| S. Semikh, S. Serre, Jean-Luc Autran, Daniela Munteanu, S. Sauze, E. Yakushev, S. Rozov, The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation, IEEE Transactions on Nuclear Science, 2012, 59, pp.303-313 (10.1109/TNS.2011.2179945) (hal-01430083) |
| Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Jean-Marc J.-M. Galliere, Antoine Touboul, Pierre Chadoutaud, Philippe Cocquerez, Michel Lacourty, Marie-Anne Claire, Jean-Luc Autran, Christian Chatry, Florent Laplanche, Bruno Azais, Frédéric Saigné, Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling, RADECS: European Conference on Radiation and Its Effects on Components and Systems, 2012, pp.1-4 () (lirmm-00805150) |
| J. Dura, F. Triozon, Daniela Munteanu, S. Barraud, S. Martinie, Jean-Luc Autran, Electronic transport in GAA silicon nanowire MOSFETs: from Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient, 2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012 () (hal-01430084) |
| Denis Pantel, Jean-Roch Vaillé, Frédéric Wrobel, Luigi Dilillo, Jean-Marc J.-M. Galliere, Jean-Luc Autran, Philippe Cocquerez, Pierre Chadoutaud, Frédéric Saigné, A Silicon Diode Based Detector for the Natural Radiative Environment Measurement in Altitude, IEEE (Nuclear Plasma Society) Real Time Conference, 2012, pp.1-6 (10.1109/RTC.2012.6418104) (lirmm-00805169) |
| Jean-Luc Autran, S. Serre, Daniela Munteanu, S. Martinie, S. Semikh, S. Sauze, S. Uznanski, G. Gasiot, P. Roche, Real-Time Soft-Error Testing of 40nm SRAMs, 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012 (10.1109/IRPS.2012.6241814) (hal-01430086) |
| Jean-Luc Autran, Daniela Munteanu, S. Serre, S. Sauze, A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits, 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012 (10.1109/IRPS.2012.6241843) (hal-01430087) |
| Sébastien Martinie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, Michael Gedion, Frédéric Saigné, Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level, IEEE Transactions on Nuclear Science, 2011, 58, pp.2798-2803 (10.1109/TNS.2011.2170851) (hal-01430100) |
| S. Martinie, Jean-Luc Autran, S. Uznanski, P. Roche, G. Gasiot, Daniela Munteanu, S. Sauze, Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM, IEEE Transactions on Nuclear Science, 2011, 58, pp.1086-1092 (10.1109/TNS.2010.2102363) (hal-01430099) |
| Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Paolo Rech, Jean-Marc J.-M. Galliere, Antoine Touboul, Pierre Chadoutaud, Philippe Cocquerez, Michel Lacourty, Thien Lam-Trong, Jean-Luc Autran, Christian Chatry, Florent Laplanche, Bruno Azais, Frédéric Saigné, Experimental Characterization of Atmospheric Radiation Environment with Stratospheric Balloon, IEEE Transactions on Nuclear Science, 2011, 58, pp.945-951 (10.1109/TNS.2011.2136359) (lirmm-00805045) |
| Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel, Journal of Non-Crystalline Solids, 2011, 357, pp.1879-1883 (10.1016/j.jnoncrysol.2010.12.046) (hal-01430098) |
| Daniela Munteanu, Jean-Luc Autran, Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications, Journal of Non-Crystalline Solids, 2011, 357, pp.1884-1887 (10.1016/j.jnoncrysol.2010.11.112) (hal-01430095) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials, Microelectronic Engineering, 2011, 88, pp.366-369 (10.1016/j.mee.2010.08.026) (hal-01430097) |
| Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, Quantum Compact Model of Drain Current in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2011, 50 (10.1143/JJAP.50.024301) (hal-01430093) |
| Sébastien Martinie, Daniela Munteanu, Gilles Le Carval, Julien Dura, Marie-Anne Jaud, Sylvain Barraud, Jean-Luc Autran, Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal-Oxide-Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices, Japanese Journal of Applied Physics, 2011, 50 (10.1143/JJAP.50.014103) (hal-01430094) |
| Jean-Luc Autran, Daniela Munteanu, P. Roche, G. Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, E. Yakushev, S. Rozov, P. Loaiza, Guillaume Warot, M. Zampaolo, Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level, Microelectronics Reliability, 2010, 50, pp.1822-1831 (10.1016/j.microrel.2010.07.033) (hal-01430102) |
| Michel Geffard, L. de Bisschop, S. Duleu, O. Pouns, G. Ferran, A. Bessede, N. Hassaine, Jean-Luc Autran, D. Bodet, A. Mangas, R. Covenas, Endotherapia, Anti-inflammatory and anti-allergy agents in Medicinal Chemistry, 2010, 9, pp.197-211 () (hal-00584065) |
| Sébastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran, Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation, IEEE Transactions on Electron Devices, 2009, 56, pp.2692-2702 (10.1109/TED.2009.2030540) (hal-01430108) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-kappa Dielectric Stack Using the Non-equilibrium Green's Function Formalism, Japanese Journal of Applied Physics, 2009, 48 (10.1143/JJAP.48.111409) (hal-01430110) |
| Daniela Munteanu, Jean-Luc Autran, 3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates, IEEE Transactions on Nuclear Science, 2009, 56, pp.2083-2090 (10.1109/TNS.2009.2016343) (hal-01430111) |
| Daniela Munteanu, Jean-Luc Autran, Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study, IEEE Transactions on Nuclear Science, 2009, 56, pp.2042-2049 (10.1109/TNS.2009.2016564) (hal-01430109) |
| Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, P. Loaiza, M. Zampaolo, J. Borel, Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM, IEEE Transactions on Nuclear Science, 2009, 56, pp.2258-2266 (10.1109/TNS.2009.2012426) (hal-01430112) |
| Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, M. Houssa, Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study, Journal of Non-Crystalline Solids, 2009, 355, pp.1180-1184 (10.1016/j.jnoncrysol.2009.03.006) (hal-01430113) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, F. Bellenger, J. Mitard, M. Houssa, Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices, Journal of Non-Crystalline Solids, 2009, 355, pp.1171-1175 (10.1016/j.jnoncrysol.2009.01.056) (hal-01430114) |
| X. Loussier, Daniela Munteanu, Jean-Luc Autran, Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics, Journal of Non-Crystalline Solids, 2009, 355, pp.1185-1188 (10.1016/j.jnoncrysol.2009.02.011) (hal-01430115) |
| Sebastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran, Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects, Molecular Simulation, 2009, 35, pp.631-637 (10.1080/08927020902769836) (hal-00515076) |
| Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs, Molecular Simulation, 2009, 35, pp.491-497 (10.1080/08927020902801548) (hal-00515080) |
| Vincent Barral, Thierry Poiroux, Sylvain Barraud, François Andrieu, Olivier Faynot, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus, Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices, IEEE Transactions on Nanotechnology, 2009, 8, pp.167-173 (10.1109/TNANO.2008.2010128) (hal-01430103) |
| Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus, Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology, IEEE Transactions on Electron Devices, 2009, 56, pp.408-419 (10.1109/TED.2008.2011681) (hal-01430106) |
| Vincent Barral, Thierry Poiroux, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus, Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility, IEEE Transactions on Electron Devices, 2009, 56, pp.420-430 (10.1109/TED.2008.2011682) (hal-01430104) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Florence Bellenger, Jérome Mitard, Michel Houssa, Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices, MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02 (10.1557/PROC-1194-A02-02) (hal-01745840) |
| Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, P. Loaiza, M. Zampaolo, J. Borel, S. Rozov, E. Yakushev, Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform, 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, pp.113-120 (10.1109/ICICDT.2009.5166277) (hal-01430105) |
| S. Martinie, E. Sarrazin, Daniela Munteanu, S. Barraud, G. Le Carval, Jean-Luc Autran, Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis, 2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, pp.139-142 (10.1109/SISPAD.2009.5290229) (hal-01430107) |
| Sebastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran, New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport, IEEE Electron Device Letters, 2008, 29, pp.1392-1394 (10.1109/LED.2008.2007305) (hal-01759431) |
| Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, 3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates, Conference on Radiation Effects on Components and Systems (RADECS), 2008, pp.280-283 (10.1109/RADECS.2008.5782727) (hal-01841105) |
| Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2008, 47, pp.7013 - 7018 (10.1143/JJAP.47.7013) (hal-01745615) |
| Sebastien Martinie, Gilles Le Carval, Daniela Munteanu, S. Soliveres, Jean-Luc Autran, Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits, IEEE Transactions on Electron Devices, 2008, 55, pp.2443-2453 (10.1109/TED.2008.927656) (hal-01759435) |
| Sébastien Martinie, Sylvain Vedraine, Daniela Munteanu, Gilles Le Carval, Vincent Barral, Jean-Luc Autran, Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances, 38th European Solid State Device Research Conference (ESSDERC’2008), 2008 () (hal-01245391) |
| Daniela Munteanu, Jean-Luc Autran, Modeling and Simulation of Single-Event Effects in Digital Devices and ICs, IEEE Transactions on Nuclear Science, 2008, 55, pp.1854-1878 (10.1109/TNS.2008.2000957) (hal-01759437) |
| Jean-Luc Autran, Daniela Munteanu, Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach, Journal of computational and theoretical nanoscience, 2008, 5, pp.1120-1127 () (hal-01759436) |
| Xavier Loussier, Daniela Munteanu, Jean-Luc Autran, Olivier Tintori, Impact of Geometrical and Electrical Parameters on Speed Performance Characteristics in Ultimate Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2008, 47, pp.3390-3395 (10.1143/JJAP.47.3390) (hal-01759434) |
| S. Martinie, Daniela Munteanu, G. Le Carval, Jean-Luc Autran, A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture, SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, pp.377+ (10.1109/SISPAD.2008.4648316) (hal-01759430) |
| Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran, Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs, NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, pp.877+ () (hal-01759433) |
| Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, P. Loaiza, M. Zampaolo, J. Borel, Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements, 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, pp.233+ (10.1109/ICICDT.2008.4567284) (hal-01759432) |
| Vincent Barral, T. Poiroux, S. Barraud, O. Bonno, F. Andrieu, C. Buj-Dufournet, L. Brevard, D. Lafond, O. Faynot, Daniela Munteanu, Jean-Luc Autran, S. Deleonibus, Electron Mean-Free-Path Experimental Extraction on Ultra-Thin and Ultra-Short Strained and Unstrained FDSOI n-MOSFETs, 2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, pp.7-8 (10.1109/SNW.2008.5418445) (hal-01759427) |
| S. Martinie, G. Le Carval, Daniela Munteanu, M-A Jaud, Jean-Luc Autran, A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performance, 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, pp.273+ (10.1109/ICICDT.2008.4567294) (hal-01759429) |
| Jean-Luc Autran, Philippe Roche, Joseph Borel, Christophe Sudre, K. Coulié, Daniela Munteanu, Thierry Parrassin, Gilles Gasiot, Jean-Pierre Schoelikopf, Altitude SEE test European platform (ASTEP) and first results in CMOS 130 nm SRAM, IEEE Transactions on Nuclear Science, 2007, 54, pp.1002-1009 (10.1109/TNS.2007.891398) (hal-01759445) |
| Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, K. Coulié, 3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs, IEEE Transactions on Nuclear Science, 2007, 54, pp.994-1001 (10.1109/TNS.2007.892284) (hal-01759444) |
| Vincent Barral, T. Poiroux, Maud Vinet, J. Widiez, B. Previtali, P. Grosgeorges, G. Le Carval, S. Barraud, Jean-Luc Autran, Daniela Munteanu, S. Deleonibus, Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors, Solid-State Electronics, 2007, 51, pp.537-542 (10.1016/j.sse.2007.02.016) (hal-01759440) |
| X. Loussier, Daniela Munteanu, Jean-Luc Autran, Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits, Journal of Non-Crystalline Solids, 2007, 353, pp.639-644 (10.1016/j.jnoncrysol.2006.11.016) (hal-01759443) |
| K. Nehari, N. Cavassilas, Fabienne Michelini, M. Bescond, Jean-Luc Autran, M. Lannoo, Full-band study of current across silicon nanowire transistors, Applied Physics Letters, 2007, 90, pp.132112:1-3 () (hal-00392816) |
| Vincent Barral, T. Poiroux, F. Andrieu, C. Buj-Dufournet, O. Faynot, T. Ernst, L. Brevard, C. Fenouillet-Beranger, D. Lafond, J. M. Hartmann, V. Vidal, F. Allain, N. Daval, I. Cayrefourcq, L. Tosti, Daniela Munteanu, Jean-Luc Autran, S. Deleonibus, Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack, 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, pp.61+ (10.1109/IEDM.2007.4418863) (hal-01759439) |
| Vincent Barral, T. Poiroux, F. Rochette, Maud Vinet, S. Barraud, O. Faynot, L. Tosti, F. Andrieu, M. Casse, B. Previtali, R. Ritzenthaler, P. Grosgeorges, E. Bernard, G. Lecarval, Daniela Munteanu, Jean-Luc Autran, S. Deleonibus, Will strain be useful for 10 nm quasi-ballistic FDSOI devices? An experimental study, 2007 Symposium on VLSI Technology, Digest of Technical Papers, 2007, pp.128+ (10.1109/VLSIT.2007.4339754) (hal-01759441) |
| Jean-Luc Autran, Full-band study of current across silicon nanowire transistors, Applied Physics Letters, 2007, XX, pp.XX () (hal-00145625) |
| Daniela Munteanu, Jean-Luc Autran, Xavier Loussier, Samuel Harrison, Robin Cerutti, Compact Modeling of Symmetrical Double-Gate MOSFETs Including Carrier Confinement and Short-Channel Effects, Molecular Simulation, 2007, 33, pp.605-611 (10.1080/08927020600930524) (hal-00526208) |
| Daniela Munteanu, V. Ferlet-Cavrois, Jean-Luc Autran, P. Paillet, J. Baggio, O. Faynot, C. Jahan, L. Tosti, Investigation of quantum effects in ultra-thin body single- and double-gate devices submitted to heavy ion irradiation, IEEE Transactions on Nuclear Science, 2006, 53, pp.3363-3371 (10.1109/TNS.2006.886206) (hal-01759448) |
| K. Coulié, Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, Investigation of 30 nm gate-all-around MOSFET sensitivity to heavy ions: A 3-D simulation study, IEEE Transactions on Nuclear Science, 2006, 53, pp.1950-1958 (10.1109/TNS.2006.880945) (hal-01759447) |
| Daniela Munteanu, Jean-Luc Autran, Xavier Loussier, Samuel Harrison, Robin Cerutti, Thomas Skotnicki, Quantum short-channel compact modelling of drain-current in double-gate MOSFET, Solid-State Electronics, 2006, 50, pp.680-686 (10.1016/j.sse.2006.03.038) (hal-01759446) |
| K. Nehari, N. Cavassilas, Jean-Luc Autran, M. Bescond, Daniela Munteanu, M. Lannoo, Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study, Solid-State Electronics, 2006, 50, pp.716-721 (10.1016/j.sse.2006.03.041) (hal-02132134) |
| K. Castellani-Couli, Daniela Munteanu, Jean-Luc Autran, Veronique Ferlet-Cavrois, P. Paillet, J. Baggio, Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation, IEEE Transactions on Nuclear Science, 2006, 53, pp.3265-3270 () (hal-02025180) |
| K. Nehari, N. Cavassilas, Fabienne Michelini, Jean-Luc Autran, M. Lannoo, M. Bescond, Modélisation et simulation du transport dans les fils quantiques de silicium : propriétés électroniques et applications aux transistors, Proceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, pp.149 () (hal-00148251) |
| N. Cavassilas, Jean-Luc Autran, M. Bescond, Nano-transistor MOS à ergot, Proceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, pp.275 () (hal-00148253) |
| Jean-Luc Autran, Daniela Munteanu, M Houssa, K. Coulié, A Said, Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectrics, Japanese Journal of Applied Physics, 2005, 44, pp.8362-8366 (10.1143/JJAP.44.8362) (hal-01759458) |
| K. Coulié, Daniela Munteanu, Jean-Luc Autran, V Ferlet-Cavrols, P Paillet, J Baggio, Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs, IEEE Transactions on Nuclear Science, 2005, 52, pp.2137-2143 (10.1109/TNS.2005.860680) (hal-01759456) |
| Jean-Luc Autran, Karim Nehari, Daniela Munteanu, Compact Modeling of the Threshold Voltage in Silicon Nanowire MOSFET including 2D-Quantum Confinement Effects, Molecular Simulation, 2005, 31, pp.839-843 (10.1080/08927020500314027) (hal-00514965) |
| Daniela Munteanu, Jean-Luc Autran, S Harrison, K Nehari, O Tintori, T Skotnicki, Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET, Molecular Simulation, 2005, 31, pp.831-837 (10.1080/08927020500313995) (hal-01759460) |
| K. Coulié, Daniela Munteanu, V Ferlet-Cavrois, Jean-Luc Autran, Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations, IEEE Transactions on Nuclear Science, 2005, 52, pp.1474-1479 (10.1109/TNS.2005.855810) (hal-01759457) |
| K. Coulié, M. Xia, Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, Influence of Simulation Parameters on the Bipolar Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations, 2005 8th European Conference on Radiation and Its Effects on Components and Systems, 2005, pp.G2-1-G2-6 () (hal-02025578) |
| K. Coulié, Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study, 2005 8th European Conference on Radiation and Its Effects on Components and Systems, 2005, pp.G1-1-G1-8 () (hal-02025580) |
| A Vedda, Daniela Munteanu, M Ferrari, P Paillet, Jean-Luc Autran, SiO2, advanced dielectrics and related devices 5 - Proceedings of the 5th Franco-Italian Symposium on SiO2, Advanced Dielectrics and Related Devices - Preface, Journal of Non-Crystalline Solids, 2005, 351, pp.VII (10.1016/j.jnocrysol.2005.04.067) (hal-01759452) |
| Jean-Luc Autran, Daniela Munteanu, M Bescond, M Houssa, A Said, A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-kappa gate dielectrics, Journal of Non-Crystalline Solids, 2005, 351, pp.1897-1901 (10.1016/j.jnoncrysol.2005.04.034) (hal-01759455) |
| Daniela Munteanu, Jean-Luc Autran, S Harrison, Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectrics, Journal of Non-Crystalline Solids, 2005, 351, pp.1911-1918 (10.1016/j.jnoncrysol.2005.04.037) (hal-01759450) |
| Jean-Luc Autran, Daniela Munteanu, O Tintori, E Decarre, Am Ionescu, An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors, Molecular Simulation, 2005, 31, pp.179-183 (10.1080/0892702051233132) (hal-01759451) |
| Jean-Luc Autran, Improvement of current-control induced by oxide notch in very short field-effect transistor, Applied Physics Letters, 2005, Vol.87, pp.073509 () (hal-00145185) |
| Jean-Luc Autran, Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs, International Electron Device Meeting (IEDM) Tech. Digest, 2005, XX, pp.533 () (hal-00146169) |
| Nicolas Cavassilas, Marc Bescond, Jean-Luc Autran, Improvement of current-control induced by oxide crenel in very short field-effect-transistor, Applied Physics Letters, 2005, 87, pp.073509 () (hal-00004546) |
| Daniela Munteanu, Jean-Luc Autran, X Loussier, S Harrison, R Cerutti, T Skotnicki, Quantum short-channel compact modeling of drain-current in double-gate MOSFET, PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, pp.137-140 (10.1109/ESSDER.2005.1546604) (hal-01759453) |
| Marc Bescond, Jean-Luc Autran, Nicolas Cavassilas, Daniela Munteanu, Michel Lannoo, Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green's Function Formalism, Journal of Computational Electronics, 2004, 3, pp.393-396 (10.1007/s10825-004-7083-4) (hal-01759465) |
| M Bescond, Jean-Luc Autran, Daniela Munteanu, M Lannoo, Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism, Solid-State Electronics, 2004, 48, pp.567-574 (10.1016/j.sse.2003.09.025) (hal-01759467) |
| M Bescond, K Nehari, Jean-Luc Autran, N Cavassilas, Daniela Munteanu, M Lannoo, 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, pp.617-620 (10.1109/IEDM.2004.1419237) (hal-01759466) |
| Damien Deleruyelle, C. Leroyer, B. de Salvo, G. Lecarval, M. Gely, T. Baron., Jean-Luc Autran, S. Deleonibus, A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals, Silicon Nanoelectronics Workshop, 2002, pp.Volume 72, Issues 1-4, Pages 399-404 () (hal-00485182) |
| Bruno Sagnes, Frédéric Saigné, J.-M. Palau, Jean-Luc Autran, M.-C. Calvet, Simulation studies of the parasitic structures involved in the SEU mechanisms in SRAMs, 5th European Workshop on Radiation and its Effects on Components and Systems, 2004 () (hal-01806844) |
| Jean-Luc Autran, Daniela Munteanu, O Tintori, M Aubert, E Decarre, An analytical subthreshold current model for ballistic double-gate MOSFETs, NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, pp.171-174 () (hal-01759463) |
| S Harrison, P Coronel, A Cros, R Cerutti, F Leverd, A Beverina, R Wacquez, J Bustos, D Delille, B Tavel, D Barge, J Bienacel, M Samson, F Martin, S Maitrejean, Daniela Munteanu, Jean-Luc Autran, T Skotnicki, Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chip, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, pp.291-294 (10.1109/IEDM.2004.1419136) (hal-01759469) |
| Jean-Luc Autran, Daniela Munteanu, O Tintori, S Harrison, E Decarre, T Skotnicki, Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates, NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, pp.163-166 () (hal-01759462) |
| Jean-Luc Autran, Daniela Munteanu, M Houssa, M Bescond, X Garros, C Leroux, Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack, INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, 2004, 811, pp.177-188 () (hal-01759464) |
| S Harrison, Daniela Munteanu, Jean-Luc Autran, A Cros, R Cerutti, T Skotnicki, Electrical characterization and modelling of high-performance SON DG MOSFETs, ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, pp.373-376 (10.1109/ESSDER.2004.1356567) (hal-01759468) |
| Daniela Munteanu, Jean-Luc Autran, E Decarre, R Dinescu, Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides, Journal of Non-Crystalline Solids, 2003, 322, pp.206-212 (10.1016/S0022-3093(03)00203-5) (hal-01759475) |
| Jean-Luc Autran, Daniela Munteanu, R Dinescu, M Houssa, Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distribution, Journal of Non-Crystalline Solids, 2003, 322, pp.219-224 (10.1016/S0022-3093(03)00205-9) (hal-01759476) |
| Jean-Luc Autran, Daniela Munteanu, Tunneling component of the ballistic current in ultimate double-gate devices, Electrochemical and Solid-State Letters, 2003, 6, pp.G95-G97 (10.1149/1.1575591) (hal-01759471) |
| A Vedda, Jean-Luc Autran, M Ferrari, Daniela Munteanu, M Passacantando, SiO2 and Advanced Dielectrics 4 - Proceedings of the 4th Franco-Italian Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, September 16-18, 2002 - Preface, Journal of Non-Crystalline Solids, 2003, 322, pp.VII (10.1016/S0022-3093(03)00346-6) (hal-01759472) |
| Daniela Munteanu, Jean-Luc Autran, Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices, Solid-State Electronics, 2003, 47, pp.1219-1225 (10.1016/S0038-1101(03)00039-X) (hal-01759470) |
| M Bescond, Jean-Luc Autran, Daniela Munteanu, N Cavassilas, M Lannoo, Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier Double-Gate MOSFET's, ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, pp.395-398 (10.1109/ESSDERC.2003.1256897) (hal-01759526) |
| S Harrison, P Coronel, F Leverd, R Cerutti, R Palla, D Delille, S Borel, Sophie Jullian, R Pantel, S Descombes, D Dutartre, Y Morand, Mp Samson, D Lenoble, A Talbot, A Villaret, S Monfray, P Mazoyer, J Bustos, H Brut, A Cros, Daniela Munteanu, Jean-Luc Autran, T Skotnicki, Highly Performant Double Gate MOSFET realized with SON process, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, pp.449-452 () (hal-01759525) |
| P Masson, Jean-Luc Autran, Daniela Munteanu, DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects, Solid-State Electronics, 2002, 46, pp.1051-1059 (10.1016/S0038-1101(02)00041-2) (hal-01759527) |
| Damien Deleruyelle, D. Fraboulet, B. de Salvo, N. Buffet, D. Mariolle, T. Baron., Jean-Luc Autran, B. Guillaumot, Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystals, Silicon Nano-electronics Workshop 2002, 2002 () (hal-00484534) |
| N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, Jean-Luc Autran, Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx, Journal of Non-Crystalline Solids, 2001, 280, pp.69-77 () (hal-00152161) |
| Jean-Luc Leray, Olivier Musseau, Philippe Paillet, Jean-Luc Autran, Frédéric Sodi, Yves-Marie Coic, Radiation Effects in Thin-Film Ferroelectric PZT for Non-Volatile Memory Applications in Microelectronics, Journal de Physique III, 1997, 7, pp.1227-1243 (10.1051/jp3:1997185) (jpa-00249644) |
| Jean-Luc Leray, Philippe Paillet, Jean-Luc Autran, An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects, Journal de Physique III, 1996, 6, pp.1625-1646 (10.1051/jp3:1996205) (jpa-00249548) |
| R.A.B. Devine, Laurent Vallier, Jean-Luc Autran, P. Paillet, J.L. Leray, Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using TaF5 source, Applied Physics Letters, 1996, 68, pp.1775 () (hal-00284566) |
| Jean-Luc Autran, Bernard Balland, Jean-Pierre Vallard, Daniel Babot, Etude par pompage de, charge des défauts induits à l'interface Si-SiO2 par rayonnements ionisants, Journal de Physique III, 1994, 4, pp.1707-1721 (10.1051/jp3:1994235) (jpa-00249219) |
| Christophe Raynaud, Jean-Luc Autran, Frédéric Seigneur, Claude Jaussaud, Thierry Billon, Gérard Guillot, Bemard Balland, Instabilités dans les structures MOS 6H-SiC, Journal de Physique III, 1994, 4, pp.937-952 (10.1051/jp3:1994176) (jpa-00249157) |
| Jean-Luc Autran, Frédéric Seigneur, Jacques Delmas, Carole Plossu, Bernard Balland, Caractérisation des états d'interface dans des transistors MOS submicroniques par différentes techniques de pompage de charge, Journal de Physique III, 1993, 3, pp.1947-1961 (10.1051/jp3:1993252) (jpa-00249057) |