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Nicole Yazigy,
J. Postel-Pellerin,
G. Di Pendina,
R.C. Sousa,
V. Della Marca,
Pierre Canet,
Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM, Microelectronics Reliability, 2023, 150, pp.115167
(10.1016/j.microrel.2023.115167)
(hal-04524638) |
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Hassen Aziza,
Hassan Bazzi,
J. Postel-Pellerin,
Pierre Canet,
Mathieu Moreau,
A. Harb,
An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2019
(10.1109/DTIS.2019.8735057)
(hal-02306907) |
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Philippe Chiquet,
Maxime Chambonneau,
V. Della Marca,
J. Postel-Pellerin,
Pierre Canet,
Sarra Souiki Souiki-Figuigui,
Guillaume Idda,
Jean-Michel Portal,
David Grojo,
Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser, Scientific Reports, 2019, 9
(10.1038/s41598-019-43344-x)
(hal-02137915) |
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T. Kempf,
V. Della Marca,
Pierre Canet,
A. Regnier,
P. Masson,
Jean-Michel Portal,
A new method for test chip and single 40nm NOR Flash cell electrical parameters correlation using a CAST structure, 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018
(10.1109/VLSI-TSA.2018.8403859)
(hal-01900783) |
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Hassen Aziza,
Pierre Canet,
J. Postel-Pellerin,
Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories, Advances in Science, Technology and Engineering Systems Journal, 2018, 3, pp.11-17
(10.25046/aj030102)
(hal-02335339) |
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Hassen Aziza,
Pierre Canet,
J. Postel-Pellerin,
Mathieu Moreau,
Jean-Michel Portal,
Marc Bocquet,
ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017
(10.1109/ULIS.2017.7962594)
(hal-01745666) |
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Maxime Chambonneau,
Sarra Souiki Souiki-Figuigui,
Philippe Chiquet,
Vincenzo Della Marca,
J. Postel-Pellerin,
Pierre Canet,
Jean-Michel Portal,
David Grojo,
Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations, Applied Physics Letters, 2017, 110, pp.161112 - 161112
()
(hal-01655116) |
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Thomas Sarno,
Romain Wacquez,
Edith Kussener,
Philippe Maurine,
Khalil Jradi,
Jean-Michel Portal,
Driss Aboulkassimi,
Sarra Souiki-Figuigui,
J. Postel-Pellerin,
Pierre Canet,
Maxime Chambonneau,
David Grojo,
Electromagnetic Analysis Perturbation using Chaos Generator, Truedevice 2016, 2016
()
(hal-01455446) |
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Pierre Canet,
J. Postel-Pellerin,
Hassen Aziza,
Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), 2016
()
(hal-01463140) |
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Pierre Canet,
J. Postel-Pellerin,
Hassen Aziza,
Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories, Microelectronics Reliability, 2016, 64, pp.36-41
(10.1016/j.microrel.2016.07.096)
(hal-01434941) |
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V. Della Marca,
M. Chambonneau,
S. Souiki-Figuigui,
J. Postel-Pellerin,
Pierre Canet,
Philippe Chiquet,
Edith Kussener,
F. Yengui,
R. Wacquez,
David Grojo,
Jean-Michel Portal,
M. Lisart,
NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests, 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016
(10.1109/IRPS.2016.7574580)
(hal-01418479) |
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Jonathan Bartoli,
V. Della Marca,
J. Postel-Pellerin,
Julien Delalleau,
Arnaud Regnier,
Stephan Niel,
Francesco La Rosa,
Pierre Canet,
Frédéric Lalande,
Optimization of the ATW Non-Volatile Memory for Connected Smart Objects, 2015 IEEE International Memory Workshop (IMW), 2015
(10.1109/IMW.2015.7150299)
(hal-01760536) |
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V. Della Marca,
T. Wakrim,
J. Postel-Pellerin,
Pierre Canet,
Advanced experimental setup for reliability and current consumption measurements of Flash non-volatile memories, IMEKO TC4, 2014
()
(hal-01760548) |
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V. Della Marca,
J. Postel-Pellerin,
G. Just,
Pierre Canet,
J.-L. Ogier,
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories, Microelectronics Reliability, 2014, 54, pp.2262 - 2265
(10.1016/j.microrel.2014.07.063)
(hal-01760459) |
