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Hassan Aziza,
J. Postel-Pellerin,
Mathieu Moreau,
Experimental Analysis of Oxide-Based RAM Analog Synaptic Behavior, Electronics, 2022, 12, pp.49
(10.3390/electronics12010049)
(hal-03941057) |
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Hassen Aziza,
J. Postel-Pellerin,
Mathieu Moreau,
STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance, IEEE Transactions on Device and Materials Reliability, 2022, 22, pp.500-505
(10.1109/TDMR.2022.3213191)
(hal-03941082) |
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Hassen Aziza,
Said Hamdioui,
Moritz Fieback,
Mottaqiallah Taouil,
Mathieu Moreau,
Patrick Girard,
Arnaud Virazel,
Karine Coulié,
Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation, Microelectronics Reliability, 2021, 126, pp.1877-1880
(10.23919/DATE51398.2021.9473967)
(hal-03504284) |
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Hussein Bazzi,
Hassen Aziza,
Mathieu Moreau,
Adnan Harb,
Performances and Stability Analysis of a novel 8T1R Non-volatile SRAM (NVSRAM) versus Variability, Journal of Electronic Testing: : Theory and Applications, 2021, 37, pp.515-532
(10.1007/s10836-021-05965-x)
(hal-03501909) |
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Hassen Aziza,
Said Hamdioui,
Moritz Fieback,
Mottaqiallah Taouil,
Mathieu Moreau,
Patrick Girard,
Arnaud Virazel,
K. Coulié,
Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State, Electronics, 2021, 10, pp.#2222
(10.3390/electronics10182222)
(lirmm-03377249) |
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Hassen Aziza,
Mathieu Moreau,
M. Fieback,
M. Taouil,
S. Hamdioui,
An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs), IEEE Access, 2020, 8, pp.137263-137274
(10.1109/ACCESS.2020.3011647)
(hal-03504829) |
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Alexandre Levisse,
Marc Bocquet,
Marco Rios,
Mouhamad Alayan,
Mathieu Moreau,
Etienne Nowak,
Gabriel Molas,
E. Vianello,
David Atienza,
Jean-Michel Portal,
Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations, IEEE Access, 2020, pp.109297-109308
(10.1109/ACCESS.2020.3000867)
(hal-02863232) |
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M. Alayan,
E. Muhr,
A. Levisse,
Marc Bocquet,
Mathieu Moreau,
E. Nowak,
G. Molas,
E. Vianello,
Jean-Michel Portal,
Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays, IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66, pp.748-752
(10.1109/TCSII.2019.2908967)
(hal-02158840) |
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Hassen Aziza,
Hassan Bazzi,
J. Postel-Pellerin,
Pierre Canet,
Mathieu Moreau,
A. Harb,
An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2019
(10.1109/DTIS.2019.8735057)
(hal-02306907) |
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Hassen Aziza,
Mathieu Moreau,
Jean-Michel Portal,
Arnaud Virazel,
Patrick Girard,
A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks, NEWCAS 2019 - 17th IEEE International Conference on Electronics Circuits and Systems, 2019
(10.1109/NEWCAS44328.2019.8961278)
(lirmm-02395325) |
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D. Gordon,
Mathieu Moreau,
Vincent Fourcassié,
J. Traniello,
Limited size-related variation in behavioral performance among workers of the exceptionally polymorphic ant Pheidole rhea, Insectes Sociaux, 2018, 65, pp.431-438
(10.1007/s00040-018-0629-4)
(hal-02123578) |
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Alexandre Levisse,
P. Royer,
Bastien Giraud,
J.P. Nöel,
Mathieu Moreau,
Jean-Michel Portal,
Architecture, design and technology guidelines for crosspoint memories, 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2017, 16, pp.677 - 686
(10.1109/NANOARCH.2017.8053733)
(hal-01788148) |
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Jean-Michel Portal,
Marc Bocquet,
Santhosh Onkaraiah,
Mathieu Moreau,
Hassen Aziza,
Damien Deleruyelle,
Kholdoun Torki,
E. Vianello,
Alexandre Levisse,
Bastien Giraud,
Olivier P Thomas,
Fabien Clermidy,
Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology, IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686
(10.1109/TNANO.2017.2703985)
(hal-01745418) |
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Hassen Aziza,
Pierre Canet,
J. Postel-Pellerin,
Mathieu Moreau,
Jean-Michel Portal,
Marc Bocquet,
ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017
(10.1109/ULIS.2017.7962594)
(hal-01745666) |
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A. Levisse,
B G Giraud,
J.P. Noel,
Mathieu Moreau,
Jean-Michel Portal,
High density emerging resistive memories: What are the limits?, 2017 IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS), 2017
(10.1109/LASCAS.2017.7948104)
(hal-01788136) |
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Alexandre Levisse,
Bastien Giraud,
Jean-Philippe Noël,
Mathieu Moreau,
Jean-Michel Portal,
Capacitor based SneakPath compensation circuit for transistor-less ReRAM architectures, Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016, pp.7-12
(10.1145/2950067.2950073)
(hal-01435118) |
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Hassen Aziza,
H. Ayari,
S. Onkaraiah,
Mathieu Moreau,
Jean-Michel Portal,
Marc Bocquet,
Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation, 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), 2016, pp.1-5
(10.1109/DTIS.2016.7483892)
(hal-01434981) |
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Alexandre Levisse,
Bastien Giraud,
Jean-Philippe Noël,
Mathieu Moreau,
Jean-Michel Portal,
SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architectures, 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
(10.1109/NVMTS.2015.7457426)
(hal-01745689) |
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Hassen Aziza,
Marc Bocquet,
Mathieu Moreau,
Jean-Michel Portal,
A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM, Solid-State Electronics, 2015, 103, pp.73 - 78
(10.1016/j.sse.2014.09.005)
(hal-01737300) |
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Hassen Aziza,
Haytem Ayari,
Santhosh Onkaraiah,
Jean-Michel Portal,
Mathieu Moreau,
Marc Bocquet,
Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability, 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014
(10.1109/DFT.2014.6962107)
(hal-01745718) |
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Jean-Michel Portal,
Marc Bocquet,
Mathieu Moreau,
Hassen Aziza,
Damien Deleruyelle,
Yue Zhang,
Wang Kang,
Jacques-Olivier O Klein,
Youguang Zhang,
Claude Chappert,
Weisheng Zhao,
An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies, Journal of Electronic Science and Technology, 2014, 12, pp.173 - 181
(10.3969/j.issn.1674-862X.2014.02.007)
(hal-01745646) |
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W. Zhao,
M. Portal,
W. Kang,
Mathieu Moreau,
Y. Zhang,
Hassen Aziza,
J.-O. Klein,
Z.H. Wang,
D. Querlioz,
Damien Deleruyelle,
Marc Bocquet,
D. Ravelosona,
Christophe Muller,
C. Chappert,
Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells, Journal of Parallel and Distributed Computing, 2014, 74, pp.2484 - 2496
(10.1016/j.jpdc.2013.08.004)
(hal-01744000) |
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Weisheng Zhao,
Mathieu Moreau,
Erya Deng,
Yue Zhang,
Jean-Michel Portal,
Jacques-Olivier O Klein,
Marc Bocquet,
Hassen Aziza,
Damien Deleruyelle,
Christophe Muller,
D. Querlioz,
Nesrine Ben Romdhane,
Dafiné Ravelosona,
Claude Chappert,
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories, IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61, pp.443 - 454
(10.1109/TCSI.2013.2278332)
(hal-01743999) |
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Hassen Aziza,
Marc Bocquet,
Mathieu Moreau,
Jean-Michel Portal,
Single-ended sense amplifier robustness evaluation for OxRRAM technology, 2013 IEEE Design and Test Symposium (IDT), 2013
(10.1109/IDT.2013.6727097)
(hal-01745737) |
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Hassen Aziza,
Marc Bocquet,
Mathieu Moreau,
Jean-Michel Portal,
A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs, International Semiconductor Device Research Symposium, 2013
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(hal-01745729) |
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Hassen Aziza,
Marc Bocquet,
Jean-Michel Portal,
Mathieu Moreau,
Christophe Muller,
A novel test structure for OxRRAM process variability evaluation, Microelectronics Reliability, 2013, 53, pp.1208 - 1212
(10.1016/j.microrel.2013.07.012)
(hal-01745650) |
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Jean-Michel Portal,
Mathieu Moreau,
Marc Bocquet,
Hassen Aziza,
Damien Deleruyelle,
Christophe Muller,
Yue Zhang,
Erya Deng,
Jacques-Olivier O Klein,
D. Querlioz,
Dafiné Ravelosona,
Claude Chappert,
Weisheng Zhao,
Analytical study of complementary memristive synchronous logic gates, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2013
(10.1109/NanoArch.2013.6623047)
(hal-01745759) |
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Jean-Michel Portal,
Mathieu Moreau,
Marc Bocquet,
Hassen Aziza,
Damien Deleruyelle,
Christophe Muller,
Y. Zhang,
E. Deng,
J.O O Klein,
D. Querlioz,
D. Ravelosona,
C. Chappert,
W.S. S Zhao,
M. Portal,
Analytical study of complementary memristive synchronous logic gates, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2013
(10.1109/NanoArch.2013.6623047)
(hal-01827052) |
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M Zhang,
Yousra Chabchoub,
Jacques-Olivier O Klein,
D. Querlioz,
Dafiné Ravelosona,
Claude Chappert,
Weisheng S Zhao,
Mathieu Moreau,
Jean-Michel Portal,
Marc Bocquet,
Hassen Aziza,
Damien Deleruyelle,
C Muller,
Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells, 11th International New Circuits and Systems Conference (NEWCAS), 2013
(10.1109/NEWCAS.2013.6573578)
(hal-01840795) |
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Mathieu Moreau,
Daniela Munteanu,
Jean-Luc Autran,
Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials, Microelectronic Engineering, 2011, 88, pp.366-369
(10.1016/j.mee.2010.08.026)
(hal-01430097) |
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Daniela Munteanu,
Mathieu Moreau,
Jean-Luc Autran,
Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel, Journal of Non-Crystalline Solids, 2011, 357, pp.1879-1883
(10.1016/j.jnoncrysol.2010.12.046)
(hal-01430098) |
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Mathieu Moreau,
Daniela Munteanu,
Jean-Luc Autran,
Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-kappa Dielectric Stack Using the Non-equilibrium Green's Function Formalism, Japanese Journal of Applied Physics, 2009, 48
(10.1143/JJAP.48.111409)
(hal-01430110) |
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Daniela Munteanu,
Jean-Luc Autran,
Mathieu Moreau,
M. Houssa,
Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study, Journal of Non-Crystalline Solids, 2009, 355, pp.1180-1184
(10.1016/j.jnoncrysol.2009.03.006)
(hal-01430113) |
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Mathieu Moreau,
Daniela Munteanu,
Jean-Luc Autran,
F. Bellenger,
J. Mitard,
M. Houssa,
Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices, Journal of Non-Crystalline Solids, 2009, 355, pp.1171-1175
(10.1016/j.jnoncrysol.2009.01.056)
(hal-01430114) |
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Daniela Munteanu,
Mathieu Moreau,
Jean-Luc Autran,
A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs, Molecular Simulation, 2009, 35, pp.491-497
(10.1080/08927020902801548)
(hal-00515080) |
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Mathieu Moreau,
Daniela Munteanu,
Jean-Luc Autran,
Florence Bellenger,
Jérome Mitard,
Michel Houssa,
Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices, MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02
(10.1557/PROC-1194-A02-02)
(hal-01745840) |
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Daniela Munteanu,
Jean-Luc Autran,
Mathieu Moreau,
3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates, Conference on Radiation Effects on Components and Systems (RADECS), 2008, pp.280-283
(10.1109/RADECS.2008.5782727)
(hal-01841105) |
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Mathieu Moreau,
Daniela Munteanu,
Jean-Luc Autran,
Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 2008, 47, pp.7013 - 7018
(10.1143/JJAP.47.7013)
(hal-01745615) |
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Daniela Munteanu,
Mathieu Moreau,
Jean-Luc Autran,
Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs, NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, pp.877+
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