IM2NP, Aix-Marseille Université - Campus de Polytech Marseille - 5 rue Enrico Fermi - Bât Néel - 13453 Marseille
Non volatile memory (NVM), Flash, Floating gate, Resistive RAM, OxRAM, PCM, electrical characterization, compact modeling
| Publications |
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| C Turck, D Bonnet, K-E Harabi, T Dalgaty, T Ballet, T Hirtzlin, A Pontlevy, A Renaudineau, E Esmanhotto, P Bessière, J Droulez, R Laurent, Marc Bocquet, Jean-Michel Portal, E. Vianello, D. Querlioz, Bayesian In-Memory Computing with Resistive Memories, 2023 International Electron Devices Meeting (IEDM), 2023, pp.1 - 4 (10.1109/iedm45741.2023.10413773) (hal-04695832) |
| A. Renaudineau, K.-E. Harabi, C. Turck, A. Laborieux, E. Vianello, Marc Bocquet, Jean-Michel Portal, D. Querlioz, Experimental Demonstration of Memristor Delay-Based Logic In-Memory Ternary Neural Network, 2023 Silicon Nanoelectronics Workshop (SNW), 2023, pp.43-44 (10.23919/SNW57900.2023.10183957) (hal-04270396) |
| J. Laguerre, Marc Bocquet, O. Billoint, S. Martin, J. Coignus, C. Carabasse, T. Magis, T. Dewolf, F. Andrieu, L. Grenouillet, Memory Window in Si:HfO 2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes, IMW 2023 - 2023 IEEE International Memory Workshop, 2023, pp.1-4 (10.1109/IMW56887.2023.10145972) (hal-04130967) |
| C. Turck, K.-E. Harabi, T. Hirtzlin, E. Vianello, R. Laurent, Jacques Droulez, Pierre Bessiere, Marc Bocquet, Jean-Michel Portal, Damien Querlioz, Energy-Efficient Bayesian Inference Using Near-Memory Computation with Memristors, 2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2023, pp.1-2 (10.23919/DATE56975.2023.10137312) (hal-04270563) |
| Mona Ezzadeen, Atreya Majumdar, Sigrid Thomas, Jean-Philippe Noël, Bastien Giraud, Marc Bocquet, François Andrieu, D. Querlioz, Jean-Michel Portal, Binary ReRAM-based BNN first-layer implementation, 2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2023, pp.1-6 (10.23919/DATE56975.2023.10137057) (hal-04270562) |
| Kamel-Eddine Harabi, C. Turck, Marie Drouhin, A. Renaudineau, T. Bersani-Veroni, D. Querlioz, T. Hirtzlin, E. Vianello, Marc Bocquet, Jean-Michel Portal, A Multimode Hybrid Memristor-CMOS Prototyping Platform Supporting Digital and Analog Projects, 2023 28th Asia and South Pacific Design Automation Conference (ASP-DAC), 2023, pp.184-185 (10.1145/3566097.3567944) (hal-04270420) |
| Kamel-Eddine Harabi, Tifenn Hirtzlin, Clément Turck, Elisa Vianello, Raphaël Laurent, Jacques Droulez, Pierre Bessière, Jean-Michel Portal, D. Querlioz, Marc Bocquet, A Memristor-Based Bayesian Machine, Nature Electronics, 2023, 6, pp.52 (10.1038/s41928-022-00886-9) (hal-03861134) |
| Nikhil Garg, Ismael Balafrej, Terrence Stewart, Jean-Michel Portal, Marc Bocquet, D. Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, F. Alibart, Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential, Frontiers in Neuroscience, 2022, 16, pp.983950, 12 pages (10.3389/fnins.2022.983950) (hal-03834905) |
| J. Minguet Lopez, F. Rummens, L. Reganaz, A. Heraud, T. Hirtzlin, L. Grenouillet, G. Navarro, M. Bernard, C. Carabasse, N. Castellani, V. Meli, S. Martin, T. Magis, E. Vianello, C. Sabbione, D. Deleruyelle, Marc Bocquet, Jean-Michel Portal, G. Molas, F. Andrieu, 1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing, IMW 2022 - IEEE International Memory Workshop, 2022, pp.1-4 (10.1109/IMW52921.2022.9779253) (cea-03707392) |
| T. Francois, J. Coignus, A. Makosiej, B G Giraud, C. Carabasse, J. Barbot, S. Martin, N. Castellani, T. Magis, H. Grampeix, S. van Duijn, C. Mounet, P. Chiquet, U. Schroeder, Stefan Slesazeck, T. Mikolajick, E. Nowak, Marc Bocquet, Nicholas Barrett, F. Andrieu, L. Grenouillet, High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays, IEEE Transactions on Electron Devices, 2022, pp.1-7 (10.1109/TED.2021.3138360) (hal-03596923) |
| T Francois, J. Coignus, A Makosiej, B G Giraud, C Carabasse, J Barbot, S Martin, N Castellani, T Magis, H Grampeix, S van Duijn, C Mounet, P Chiquet, U Schroeder, S Slesazeck, T Mikolajick, E Nowak, Marc Bocquet, N Barrett, F Andrieu, L Grenouillet, 16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility, 67th Annual IEEE International Electron Devices Meeting (IEDM) 2021, 2021 (10.1109/IEDM19574.2021.9720640) (hal-03596974) |
| Joel Minguet Lopez, Tifenn Hirtzlin, Manon Dampfhoffer, Laurent Grenouillet, Lucas Reganaz, Gabriele Navarro, Catherine Carabasse, E. Vianello, Thomas Magis, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, François Andrieu, Gabriel Molas, OxRAM+OTS optimization for Binarized Neural Network hardware implementation, Semiconductor Science and Technology, 2021, 37, pp.014001 (10.1088/1361-6641/ac31e2) (hal-03418653) |
| Franck Melul, V. Della Marca, Marc Bocquet, Madjid Akbal, Pierre Laine, Frederique Trenteseaux, Marc Mantelli, Marjorie Hesse, Arnaud Regnier, Stephan Niel, Francesco Rosa, Morphology and reliability aspects of 40 nm eSTM™ architecture, Microelectronics Reliability, 2021, 126, pp.114266 (10.1016/j.microrel.2021.114266) (hal-03596892) |
| Atreya Majumdar, Marc Bocquet, Tifenn Hirtzlin, Axel Laborieux, Jacques-Olivier Klein, Etienne Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, Model of the Weak Reset Process in HfO x Resistive Memory for Deep Learning Frameworks, IEEE Transactions on Electron Devices, 2021, 68, pp.4925-4932 (10.1109/TED.2021.3108479) (hal-03372056) |
| M. Ezzadeen, A. Majumdar, Marc Bocquet, B G Giraud, J.-P. Noel, F. Andrieu, D. Querlioz, Jean-Michel Portal, Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges, ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, pp.83-86 (10.1109/ESSCIRC53450.2021.9567742) (hal-03597353) |
| F. Jebali, A. Majumdar, A. Laborieux, T. Hirtzlin, E. Vianello, J.P. Walder, Marc Bocquet, D. Querlioz, Jean-Michel Portal, CAPC: A Configurable Analog Pop-Count Circuit for Near-Memory Binary Neural Networks, 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), 2021, pp.158-161 (10.1109/MWSCAS47672.2021.9531919) (hal-03624922) |
| Franck Melul, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Frederique Trenteseaux, Marc Mantelli, Arnaud Regnier, Stephan Niel, Francesco Rosa, Hot Electron Source Side Injection Comprehension in 40nm eSTM™, 2021 IEEE International Memory Workshop (IMW), 2021, pp.1-4 (10.1109/IMW51353.2021.9439613) (hal-03596898) |
| T. Francois, L. Grenouillet, Jean Coignus, N. Vaxelaire, C. Carabasse, F. Aussenac, S. Chevalliez, S. Slesazeck, C. Richter, P. Chiquet, Marc Bocquet, U. Schroeder, T. Mikolajick, F. Gaillard, E. Nowak, Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors, Applied Physics Letters, 2021, 118, pp.062904 (10.1063/5.0035650) (hal-03596986) |
| J. Minguet Lopez, N. Castellani, L. Grenouillet, L. Reganaz, G. Navarro, M. Bernard, C. Carabasse, T. Magis, Damien Deleruyelle, E. Nowak, G. Molas, Marc Bocquet, Jean-Michel Portal, Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays, 2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), 2021, pp.107-110 (10.1109/IMW51353.2021.9439606) (hal-03622145) |
| E. Esmanhotto, L. Brunet, N. Castellani, D. Bonnet, T. Dalgaty, L. Grenouillet, D. Ly, C. Cagli, C. Vizioz, N. Allouti, F. Laulagnet, O. Gully, N. Bernard-Henriques, Marc Bocquet, G. Molas, P. Vivet, D. Querlioz, Jm. Portal, S. Mitra, F. Andrieu, C. Fenouillet-Beranger, E. Nowak, E. Vianello, High-Density 3D Monolithically Integrated Multiple 1T1R Multi-Level-Cell for Neural Networks, 2020 IEEE International Electron Devices Meeting (IEDM), 2020, pp.36.5.1-36.5.4 (10.1109/IEDM13553.2020.9372019) (hal-03218937) |
| Axel Laborieux, Marc Bocquet, Hirtzlin Tifenn, Jacques-Olivier Klein, Etienne Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, Implementation of Ternary Weights With Resistive RAM Using a Single Sense Operation per Synapse, IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, pp.1-10 (10.1109/TCSI.2020.3031627) (hal-02983778) |
| Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, D. Querlioz, Embracing the unreliability of memory devices for neuromorphic computing, IRPS 2020 - IEEE International Reliability Physics Symposium, 2020, pp.1-5 (10.1109/IRPS45951.2020.9128346) (hal-04019222) |
| Bogdan Penkovsky, Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications, 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2020, pp.690-695 (10.23919/DATE48585.2020.9116439) (hal-03218970) |
| Tifenn Hirtzlin, Marc Bocquet, Bogdan Penkovsky, Jacques-Olivier Klein, Etienne Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays, Frontiers in Neuroscience, 2020, 13 (10.3389/fnins.2019.01383) (hal-02436382) |
| Alexandre Levisse, Marc Bocquet, Marco Rios, Mouhamad Alayan, Mathieu Moreau, Etienne Nowak, Gabriel Molas, E. Vianello, David Atienza, Jean-Michel Portal, Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations, IEEE Access, 2020, pp.109297-109308 (10.1109/ACCESS.2020.3000867) (hal-02863232) |
| Axel Laborieux, Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, L Herrera Diez, Etienne Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse, 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2020 (10.1109/AICAS48895.2020.9073877) (hal-02403984) |
| T. Hirtzlin, Marc Bocquet, M. Ernoult, J.-O Klein, E. Nowak, E. Vianello, J.-M Portal, D. Querlioz, Hybrid Analog-Digital Learning with Differential RRAM Synapses, 2019 IEEE International Electron Devices Meeting (IEDM), 2019 (10.1109/IEDM19573.2019.8993555) (hal-02399624) |
| T. Francois, L. Grenouillet, Jean Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup, C. Pellissier, S Slesazeck, V Havel, C Richter, A Makosiej, B G Giraud, E T Breyer, M Materano, P Chiquet, Marc Bocquet, E Nowak, U Schroeder, F Gaillard, Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications, 2019 IEEE International Electron Devices Meeting (IEDM), 2019 (10.1109/IEDM19573.2019.8993485) (hal-02399654) |
| D. Querlioz, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, E. Vianello, Marc Bocquet, Jean-Michel Portal, Miguel Romera, Philippe Talatchian, Julie Grollier, Memory-Centric Neuromorphic Computing With Nanodevices, Biomedical Circuits and Systems Conference (BiOCAS), 2019 (10.1109/BIOCAS.2019.8919010) (hal-02399731) |
| Tifenn Hirtzlin, Bogdan Penkovsky, Jacques-Olivier Klein, Nicolas Locatelli, Adrien F. Vincent, Marc Bocquet, Jean-Michel Portal, D. Querlioz, Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction, 15th IEEE / ACM International Symposium on Nanoscale Architectures (NANOARCH), 2019 () (hal-02399718) |
| Tifenn Hirtzlin, Bogdan Penkovsky, Marc Bocquet, Jacques-Olivier Klein, Jean-Michel Portal, D. Querlioz, Stochastic Computing for Hardware Implementation of Binarized Neural Networks, IEEE Access, 2019, pp.1-1 (10.1109/ACCESS.2019.2921104) (hal-02158846) |
| T. Francois, Jean Coignus, L. Grenouillet, J.P. P Barnes, N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta, M. Gros-Jean, S. Jeannot, Pierre Boivin, Philippe Chiquet, Marc Bocquet, E. Nowak, F Gaillard, Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance, 2019 IEEE 11th International Memory Workshop (IMW), 2019, 66, pp.1-4 (10.1109/IMW.2019.8739664) (hal-02399691) |
| M. Alayan, E. Muhr, A. Levisse, Marc Bocquet, Mathieu Moreau, E. Nowak, G. Molas, E. Vianello, Jean-Michel Portal, Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays, IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66, pp.748-752 (10.1109/TCSII.2019.2908967) (hal-02158840) |
| T Hirtzlin, Marc Bocquet, J.-O Klein, E. Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks, IEEE International Conference on Artificial Intellignence Circuits and Systems (AICAS), 2019 (10.1109/AICAS.2019.8771544) (hal-02159142) |
| Marc Bocquet, T. Hirztlin, J.-O. Klein, E. Nowak, E. Vianello, Jean-Michel Portal, D. Querlioz, In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks, 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp.20.6.1-20.6.4 (10.1109/IEDM.2018.8614639) (hal-02011124) |
| Charles Rebora, Ruomeng Huang, Gabriela P. Kissling, Marc Bocquet, C H (kees) De Groot, Luc Favre, David Grosso, Damien Deleruyelle, Magali Putero, Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy, Nanotechnology, 2018 (10.1088/1361-6528/aae6db) (hal-01951256) |
| Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Jean-Michel Portal, PCM compact model: Optimized methodology for model card extraction, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, SISPAD 2018, pp.190-193 (10.1109/SISPAD.2018.8551654) (cea-02188521) |
| V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, Philippe Chiquet, Marc Bocquet, Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction, Microelectronics Reliability, 2018, 88-90, pp.159 - 163 (10.1016/j.microrel.2018.06.116) (hal-01900789) |
| Corentin Pigot, Marc Bocquet, Fabien Gilibert, Marina Reyboz, Olga Cueto, V. Della Marca, Paola Zuliani, Jean-Michel Portal, Comprehensive Phase-Change Memory Compact Model for Circuit Simulation, IEEE Transactions on Electron Devices, 2018, pp.1 - 8 (10.1109/TED.2018.2862155) (hal-01869957) |
| M. Kharbouche-Harrari, J. Postel-Pellerin, Gregory Di Pendina, R. Wacquez, D. Aboulkassimi, Marc Bocquet, R. Sousa, R. Delattre, M. Portal, Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues, 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018, 2018, pp.243-244 (10.1109/IOLTS.2018.8474088) (hal-01976697) |
| Elena Ioana Vatajelu, Lorena Anghel, Jean-Michel Portal, Marc Bocquet, Guillaume Prenat, Resistive and spintronic RAMs: device, simulation, and applications, IOLTS 2018 - IEEE 24th International Symposium on On-Line Testing And Robust System Design, 2018, pp.109-114 (10.1109/IOLTS.2018.8474226) (hal-01976583) |
| Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, Jean-Michel Portal, Phase-Change Memory: A Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching, Japanese Journal of Applied Physics, 2018, 57 (10.7567/JJAP.57.04FE13) (hal-01737915) |
| Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, Jean-Michel Portal, Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory, 49th International Conference on Solid State Devices and Materals, 2017 () (hal-01737914) |
| Jean-Michel Portal, Marc Bocquet, Santhosh Onkaraiah, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Kholdoun Torki, E. Vianello, Alexandre Levisse, Bastien Giraud, Olivier P Thomas, Fabien Clermidy, Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology, IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686 (10.1109/TNANO.2017.2703985) (hal-01745418) |
| A Krakovinsky, Marc Bocquet, R Wacquez, Jean Coignus, Jean-Michel Portal, Thermal Laser Attack and High Temperature Heating on HfO2-based OxRAM Cells, International Symposium on On-Line Testing and Robust System Design, 2017 () (hal-01737925) |
| Hassen Aziza, Pierre Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 (10.1109/ULIS.2017.7962594) (hal-01745666) |
| El Amine Agharben, M. Bileci, A. Roussy, Marc Bocquet, Flash gate optimized process and integration for electrical performances requirement on advanced embedded memory, 2016 International Symposium on Semiconductor Manufacturing (ISSM), 2016 (10.1109/ISSM.2016.7934533) (hal-01737950) |
| G. Molas, G. Piccolboni, M. Barci, B. Traore, J. Guy, G. Palma, E. Vianello, P. Blaise, Jean-Michel Portal, Marc Bocquet, A. Levisse, B G Giraud, J. P. Noel, M. Harrand, M. Bernard, A. Route, B. de Salvo, L. Perniola, Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications, 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2016 () (hal-01435224) |
| A. Krakovinsky, Marc Bocquet, R. Wacquez, Jean Coignus, Damien Deleruyelle, Cédric Djaou, G. Reimbold, Jean-Michel Portal, Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity, 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, pp.152-156 () (hal-01435097) |
| Hassen Aziza, H. Ayari, S. Onkaraiah, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation, 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), 2016, pp.1-5 (10.1109/DTIS.2016.7483892) (hal-01434981) |
| G. Piccolboni, G. Molas, M. Portal, R. Coquand, Marc Bocquet, D. Garbin, E. Vianello, C. Carabasse, V. Delaye, C. Pellissier, T. Magis, C. Cagli, M. Gély, O. Cueto, Damien Deleruyelle, Gérard Ghibaudo, B. de Salvo, L. Perniola, Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications, 2015 IEEE International Electron Devices Meeting (IEDM), 2015, pp.17.2.1-17.2.4 (10.1109/IEDM.2015.7409717) (hal-01804658) |
| Sarpi Brice, Nabil Rochdi, Rachid Daineche, M. Bertoglio, Christophe Girardeaux, Alain Baronnet, Jacques Perrin Toinin, Marc Bocquet, Mehdi Djafari-Rouhani, Anne Hémeryck, S. Vizzini, Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure, Surface Science Letters, 2015, 642, pp.L1-L5 (10.1016/j.susc.2015.08.003) (hal-01496546) |
| El Amine Agharben, A. Roussy, Marc Bocquet, M. Bileci, S Bégouin, A. Marchadier, Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory, 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2015 (10.1109/ASMC.2015.7164428) (hal-01737953) |
| Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM, Solid-State Electronics, 2015, 103, pp.73 - 78 (10.1016/j.sse.2014.09.005) (hal-01737300) |
| A. Prakash, Damien Deleruyelle, J. Song, Marc Bocquet, H. Hwang, Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application, Applied Physics Letters, 2015, 106, pp.233104 (10.1063/1.4922446) (hal-01737306) |
| Hassen Aziza, Haytem Ayari, Santhosh Onkaraiah, Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability, 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 (10.1109/DFT.2014.6962107) (hal-01745718) |
| A El Amraoui, Marc Bocquet, F. Barros, Jean-Michel Portal, M. Charbonneau, S. Jacob, J. Bablet, M. Benwadih, Viktor Fischer, R. Coppard, R. Gwoziecky, Printed complementary organic thin film transistors based decoder for ferroelectric memory, ESSCIRC 2014 - 40th European Solid State Circuits Conference, 2014 (10.1109/ESSCIRC.2014.6942034) (hal-01738468) |
| Charles Rebora, Marc Bocquet, T. Ouled-Khachroum, Magali Putero, Damien Deleruyelle, Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 (10.1109/PRIME.2014.6872754) (hal-01804660) |
| Ogun Turkyilmaz, Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, H. Hraziia, Costin Anghel, Jean-Michel Portal, Marc Bocquet, RRAM-based FPGA for “Normally Off, Instantly On” applications, Journal of Parallel and Distributed Computing, 2014, 74, pp.2441 - 2451 (10.1016/j.jpdc.2013.08.003) (hal-01743243) |
| Jean-Michel Portal, Marc Bocquet, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, Yue Zhang, Wang Kang, Jacques-Olivier O Klein, Youguang Zhang, Claude Chappert, Weisheng Zhao, An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies, Journal of Electronic Science and Technology, 2014, 12, pp.173 - 181 (10.3969/j.issn.1674-862X.2014.02.007) (hal-01745646) |
| W. Zhao, M. Portal, W. Kang, Mathieu Moreau, Y. Zhang, Hassen Aziza, J.-O. Klein, Z.H. Wang, D. Querlioz, Damien Deleruyelle, Marc Bocquet, D. Ravelosona, Christophe Muller, C. Chappert, Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells, Journal of Parallel and Distributed Computing, 2014, 74, pp.2484 - 2496 (10.1016/j.jpdc.2013.08.004) (hal-01744000) |
| T. Cabout, E. Vianello, E. Jalaguier, H. Grampeix, G. Molas, P. Blaise, O. Cueto, M. Guillermet, J. F Nodin, L. Perniola, S. Blonkowski, S. Jeannot, S. Denorme, P. Candelier, Marc Bocquet, Christophe Muller, Effect of SET temperature on data retention performances of HfO2-based RRAM cells, 2014 IEEE 6th International Memory Workshop (IMW), 2014 (10.1109/IMW.2014.6849355) (hal-01738447) |
| Fabien Clermidy, Natalija Jovanovic, Santhosh Onkaraiah, Houcine Oucheikh, Olivier P Thomas, Ogun Turkyilmaz, E. Vianello, Jean-Michel Portal, Marc Bocquet, Resistive memories: Which applications?, Design Automation and Test in Europe, 2014 (10.7873/DATE.2014.282) (hal-01804664) |
| Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal, Thomas Cabout, Eric Jalaguier, Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories, IEEE Transactions on Electron Devices, 2014, 61, pp.674 - 681 (10.1109/TED.2013.2296793) (hal-01737291) |
| Weisheng Zhao, Mathieu Moreau, Erya Deng, Yue Zhang, Jean-Michel Portal, Jacques-Olivier O Klein, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, D. Querlioz, Nesrine Ben Romdhane, Dafiné Ravelosona, Claude Chappert, Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories, IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61, pp.443 - 454 (10.1109/TCSI.2013.2278332) (hal-01743999) |
| Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, Jean-Michel Portal, Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM), Journal of Low Power Electronics and Applications, 2014, 4, pp.1-14 (10.3390/jlpea4010001) (hal-01737320) |
| Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, Single-ended sense amplifier robustness evaluation for OxRRAM technology, 2013 IEEE Design and Test Symposium (IDT), 2013 (10.1109/IDT.2013.6727097) (hal-01745737) |
| Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal, A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs, International Semiconductor Device Research Symposium, 2013 () (hal-01745729) |
| Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller, A novel test structure for OxRRAM process variability evaluation, Microelectronics Reliability, 2013, 53, pp.1208 - 1212 (10.1016/j.microrel.2013.07.012) (hal-01745650) |
| Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Yue Zhang, Erya Deng, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao, Analytical study of complementary memristive synchronous logic gates, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2013 (10.1109/NanoArch.2013.6623047) (hal-01745759) |
| M Zhang, Yousra Chabchoub, Jacques-Olivier O Klein, D. Querlioz, Dafiné Ravelosona, Claude Chappert, Weisheng S Zhao, Mathieu Moreau, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, C Muller, Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells, 11th International New Circuits and Systems Conference (NEWCAS), 2013 (10.1109/NEWCAS.2013.6573578) (hal-01840795) |
| T. Cabout, L. Perniola, V. Jousseaume, H. Grampeix, J.F. Nodin, A. Toffoli, M. Guillermet, E. Jalaguier, E. Vianello, G. Molas, G. Reimbold, B. de Salvo, T. Diokh, P. Candelier, O. Pirrotta, A. Padovani, L. Larcher, Marc Bocquet, Christophe Muller, Temperature impact (up to 200°C) on performance and reliability of HfO2-based RRAMs, 2013 5th IEEE International Memory Workshop (IMW), 2013 (10.1109/IMW.2013.6582112) (hal-01738426) |
| K. Coulié, Marc Bocquet, Hassen Aziza, Jean-Michel Portal, Rahajandraibe Wenceslas, Christophe Muller, SPICE level analysis of Single Event Effects in an OxRRAM cell, 2013 14th Latin American Test Workshop - LATW, 2013 (10.1109/LATW.2013.6562684) (hal-01804661) |
| T. Cabout, J. Buckley, C. Cagli, V. Jousseaume, J.-F. Nodin, B. de Salvo, Marc Bocquet, Christophe Muller, Role of Ti and Pt electrodes on resistance switching variability of HfO$_2$-based Resistive Random Access Memory, EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices, 2012, 533, pp.19 - 23 (10.1016/j.tsf.2012.11.050) (hal-01762335) |
| H. Hraziia, Adam Makosiej, Giorgio Palma, Jean-Michel Portal, Marc Bocquet, Olivier Thomas, Fabien Clermidy, Marina Reyboz, Santhosh Onkaraiah, Christophe Muller, Damien Deleruyelle, Andrei Vladimirescu, Amara Amara, Costin Anghel, Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up, Solid-State Electronics, 2013, 90, pp.99-106 (10.1016/j.sse.2013.02.045) (hal-01744003) |
| Weisheng Zhao, M Zhang, Jacques-Olivier Klein, D. Querlioz, Dafine Ravelosona, Claude Chappert, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Crossbar architecture based on 2R complementary resistive switching memory cell, 2012 IEEE/ACM International Symposium on Nanoscale Architectures, 2012 (10.1145/2765491.2765508) (hal-01745351) |
| Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, Jean-Michel Portal, Marc Bocquet, Christophe Muller, H. Hraziia, Costin Anghel, Amara Amara, Bipolar ReRAM Based Non-‐Volatile Flip-‐flops for Low-‐Power Architectures, 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS), 2012 (10.1109/NEWCAS.2012.6329045) (hal-01745498) |
| Thomas Cabout, J. Buckley, Carlo Cagli, Vincent Jousseaume, Jean-François Nodin, Barbara de Salvo, Marc Bocquet, Christophe Muller, Resistance switching variability in HfO2-based memory structures with different electrodes, EMRS Spring Meeting 2012, 2012 () (hal-01738395) |
| Guillaume Gay, Gabriel Molas, Marc Bocquet, Eric Jalaguier, Marc Gély, L. Masarotto, J.P Colonna, Helen Grampeix, F. Martin, P. Brianceau, Vincent Vidal, R. Kies, T. Baron., Gérard Ghibaudo, Barbara Desalvo, Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics, IEEE Transactions on Electron Devices, 2012, 59, pp.933 - 940 (10.1109/TED.2012.2182769) (hal-01804667) |
| Jean-Michel Portal, Marc Bocquet, Damien Deleruyelle, Christophe Muller, Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications, Journal of Low Power Electronics, 2012, 8, pp.1 - 10 (10.1166/jolpe.2012.1172) (hal-01745507) |
| Damien Deleruyelle, Magali Putero, T. Ouled-Khachroum, Marc Bocquet, Marie-Vanessa Coulet, Xavier Boddaert, C. Calmes, Christophe Muller, Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate, Solid-State Electronics, 2012, pp.xxxxx (10.1016/j.sse.2012.06.010) (emse-00767177) |
| S Tirano, Marc Bocquet, Christophe Muller, Damien Deleruyelle, L. Perniola, V. Jousseaume, B. de Salvo, G. Reimbold, On the electrical variability of resistive-switching memory devices based on NiO oxide, 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), 2011 () (hal-01745633) |
| Marc Bocquet, Damien Deleruyelle, Christophe Muller, Jean-Michel Portal, Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories, Applied Physics Letters, 2011, 98 (10.1063/1.3605591) (hal-01779321) |
| Gabriel Molas, J.P. Colonna, R. Kies, D. Belhachemi, Marc Bocquet, M. Gély, V. Vidal, P. Brianceau, Eugénie Martinez, A.M. Papon, C. Licitra, L. Vandroux, Gérard Ghibaudo, Barbara Desalvo, Investigation of charge-trap memories with AlN based band engineered storage layers, Solid-State Electronics, 2011, 58, pp.68 - 74 (10.1016/j.sse.2010.11.030) (hal-01804675) |
| Christophe Muller, Damien Deleruyelle, O. Ginez, Jean-Michel Portal, Marc Bocquet, Design challenges for prototypical and emerging memory concepts relying on resistance switching, 2011 IEEE Custom Integrated Circuits Conference (CICC 2011), 2011 (10.1109/CICC.2011.6055316) (hal-01745644) |
| J.-P. Colonna, Marc Bocquet, Gabriel Molas, N. Rochat, P. Blaise, Helen Grampeix, Christophe Licitra, D. Lafond, Lia Masoero, Vincent Vidal, Jean-Paul Barnes, M. Veillerot, K. Yckache, Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2011, 29, pp.159-165 (10.1116/1.3535552) (hal-01804670) |
| G. Molas, Marc Bocquet, J. Colonna, V. Vidal, R. Kies, H. Grampeix, F. Martin, A. Papon, H. Dansas, P. Brianceau, C. Licitra, J. Barnes, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo, Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010 (10.1109/VTSA.2010.5488949) (hal-01745640) |
| Emmanuel Nowak, E. Vianello, L. Perniola, Marc Bocquet, G. Molas, R. Kies, M. Gely, Gérard Ghibaudo, B. de Salvo, G. Reimbold, F. Boulanger, Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices, Japanese Journal of Applied Physics, 2010, 49, pp.04DD12 () (hal-00596309) |
| G. Molas, L. Masoero, P. Blaise, A. Padovani, J. P. Colonna, E. Vianello, Marc Bocquet, Emmanuel Nowak, M. Gasulla, O. Cueto, H. Grampeix, F. Martin, R. Kies, P. Brianceau, M. Gély, A. M. Papon, D. Lafond, J. P. Barnes, C. Licitra, Gérard Ghibaudo, L. Larcher, S. Deleonibus, B. de Salvo, Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling, IEEE IEDM 2010,, 2010, pp.xx () (hal-00604550) |
| Marc Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, M. Gély, J.P. Colonna, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, S. Deleonibus, Gérard Ghibaudo, Georges Pananakakis, B. de Salvo, Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories, Solid-State Electronics, 2009, 53, pp.786 - 791 (10.1016/j.sse.2009.03.018) (hal-01737746) |
| Emmanuel Nowak, E. Vianello, L. Perniola, Marc Bocquet, G. Molas, R. Kies, M. Gely, Gérard Ghibaudo, B. de Salvo, G. Reimbold, F. Boulanger, Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices., International Conference on Solid State Devices and Materials (SSDM), 2009, pp.xx () (hal-00604215) |
| G. Molas, Marc Bocquet, E. Vianello, L. Perniola, H. Grampeix, Colonna J.P., L. Masarotto, F. Martin, P. Brianceau, M. Gély, C. Bongiorno, S. Lombardo, Georges Pananakakis, Gérard Ghibaudo, De Salvo B., Reliability of charge trapping memories with high-k control dielectrics, Microelectronic Engineering, 2009, 86, pp.1796-1803 () (hal-00596125) |
| G. Molas, Marc Bocquet, H. Grampeix, J.P. Colonna, L. Masarotto, C. Licitra, N. Rochat, T. Veyron, F. Martin, M. Gély, C. Bongiorno, S. Lombardo, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo., Reliability of charge trapping memories with high-k control dielectrics, 5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, 2008 () (hal-00392559) |
| Emmanuel Nowak, Marc Bocquet, L. Perniola, Gérard Ghibaudo, G. Molas, C. Jahan, R. Kies, G. Reimbold, B. de Salvo, F. Boulanger, New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories., IEEE International Electron Devices Meeting 2008, San Francisco, USA, 2008, pp.x () (hal-00392162) |
| G. Molas, Marc Bocquet, J. Buckley, H. Grampeix, M. Gély, J.P. Colonna, F. Martin, P. Brianceau, V. Vidal, C. Bongiorno, S. Lombardo, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo, S. Deleonibus, Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories., Microelectronic Engineering, 2008, 85, 2393-2399, pp.x () (hal-00391751) |
| Marc Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, M. Gély, J.-P. Colonna, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, B. de Salvo, S. Deleonibus, Georges Pananakakis, Gérard Ghibaudo, On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories, 38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, 2008, pp.x () (hal-00392558) |
| G. Molas, Marc Bocquet, J. Buckley, J. P Colonna, L. Masarotto, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, P. Brianceau, L. Vermande, P. Scheiblin, M. Gély, A. Papon, G. Auvert, L. Perniola, C. Licitra, T. Veyron, N. Rochat, C. Bongiorno, S. Lombardo, B. de Salvo, S. Deleonibus, Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications, 2007 IEEE International Electron Devices Meeting - IEDM '07, 2007, pp.453-456 (10.1109/IEDM.2007.4418971) (hal-02072903) |
| G. Molas, Marc Bocquet, J. Buckley, H. Grampeix, M. Gely, J.-P. Colonna, C. Licitra, N. Rochat, T. Veyron, X. Garros, Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories, Solid-State Electronics, 2007, 51, pp.1540 - 1546 (10.1016/j.sse.2007.09.020) (hal-01804685) |
| Marc Bocquet, G. Molas, H. Grampeix, J. Buckley, F. Martin, J.-P. Colonna, M. Gély, Georges Pananakakis, Gérard Ghibaudo, B. de Salvo, S. Deleonibus, Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers, International Conference on Memory Technology and Design (ICMTD), 2007 () (hal-01745578) |
| J. Buckley, Marc Bocquet, G. Molas, M. Gely, P. Brianceau, N. Rochat, Eugénie Martinez, F. Martin, H. Grampeix, J.P. Colonna, V. Vidal, Cédric Leroux, Gérard Ghibaudo, Georges Pananakakis, C. Bongiorno, D. Corso, S. Lombardo, B. Desalvo, In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap, NVMsIEDM 2006, 2006, pp.XX () (hal-00147137) |
